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31. 发明专利

JPH0794508A SEMICONDUCTOR DEVICE AND ITS MANUFACTURE 失效
公开(公告)号：JPH0794508A
公开(公告)日：1995-04-07
申请号：JP23282493
申请日：1993-09-20
申请人： HITACHI LTD
发明人： HINODE KENJI , TAKEDA KENICHI , HONMA YOSHIO
IPC分类号： H01L21/28 , H01L21/3205 , H01L23/52
摘要： PURPOSE:To provide fine aluminum or aluminum alloy wiring with a high reliability causing no stress migration or electromigration and its manufacturing method. CONSTITUTION:Aluminum or aluminum alloy wiring 113 is directly formed on an insulating layer 15 laid on a substrate 11. Moreover, a film 115 having the adhesive property with the aluminum lower than that between the aluminum and the insulating layer is provided on a side surface or both the side surface and top surface of the aluminum or aluminum alloy wiring.

32. 发明专利

JP2003264236A SEMICONDUCTOR MEMORY AND ITS MANUFACTURING METHOD 审中-公开
公开(公告)号：JP2003264236A
公开(公告)日：2003-09-19
申请号：JP2002064648
申请日：2002-03-11
申请人： HITACHI LTD
发明人： MATSUI YUICHI , HIRATANI MASAHIKO , TAKEDA KENICHI , MIKI HIROSHI , HISAMOTO MASARU
IPC分类号： H01L27/04 , H01L21/316 , H01L21/822 , H01L21/8222 , H01L21/8234 , H01L21/8238 , H01L21/8242 , H01L27/06 , H01L27/092 , H01L27/10 , H01L27/108
摘要： PROBLEM TO BE SOLVED: To solve the problem that a Ta 2 O 5 dielectric film is preferably formed on a Cu electrode when an effective MIM structure capacitor is formed by applying LSI for mix installment, but since Cu has a large diffusion coefficient and low heat resistance or oxidation resistance, electric characteristics of the capacitor deteriorate. SOLUTION: Since diffusion and oxidation of Cu can be controlled by inserting an anti-reaction layer of Ta between a Cu-interconnect and a Ta 2 O 5 dielectric film, leak current density of the capacitor can be reduced. Since deficiency of oxygen in the Ta 2 O 5 dielectric film can be repaired while controlling oxidation of an underlying layer by performing post-heat-treatment of the Ta 2 O 5 dielectric film in an inert atmosphere, variation in the capacitance of the capacitor due to hysteresis and voltage can be reduced. Since an MIM structure capacitor employing a Ta 2 O 5 film having a high permittivity can be formed on the Cu-interconnect, a high integration, low cost LSI for mix installment can be realized. COPYRIGHT: (C)2003,JPO

33. 发明专利

JP2003133312A SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR 审中-公开
公开(公告)号：JP2003133312A
公开(公告)日：2003-05-09
申请号：JP2001327116
申请日：2001-10-25
申请人： HITACHI LTD
发明人： HANAOKA HIROKO , HINODE KENYA , TAKEDA KENICHI , KODAMA DAISUKE , SAKUMA NORIYUKI
IPC分类号： H01L23/52 , H01L21/3205 , H01L23/532
摘要： PROBLEM TO BE SOLVED: To solve the problem of low-resistance wiring being difficult to be realized, because the resistance of extra fine copper wiring having a width or thickness which is about twice the length of the mean free path of copper atoms or smaller, becomes larger, as compared with aluminum wiring having about the same resistance value. SOLUTION: For wiring having such wiring form that the resistivity ρ of the wiring becomes ρAl =ρCu , cupper wiring is used. Consequently, a semiconductor device having a multilayered wiring layer which propagates signals at a high speed can be realized with a low resistance.

34. 发明专利

JP2002033384A WIRING STRUCTURE AND SEMICONDUCTOR DEVICE HAVING THE SAME 失效
公开(公告)号：JP2002033384A
公开(公告)日：2002-01-31
申请号：JP2000217215
申请日：2000-07-13
申请人： HITACHI LTD
发明人： HINODE KENJI , OSHIMA TAKAFUMI , TAKEDA KENICHI
IPC分类号： H01L23/522 , H01L21/768
摘要： PROBLEM TO BE SOLVED: To provide drastic via wiring connection structure that has superior heat-resistance property, will not depend on the kinds of an insulating film, and can form a reliable wiring system and semiconductor device. SOLUTION: To make a via connected to wide wiring equivalent to connection for narrow wiring near a connection part, and the island of the insulating film is provided near the via in the wide wiring, and the width of wiring connected to the via is narrowed.

35. 发明专利

JP2001298009A POLISHING METHOD 失效
公开(公告)号：JP2001298009A
公开(公告)日：2001-10-26
申请号：JP2001077422
申请日：2001-03-19
申请人： HITACHI LTD
发明人： KONDO SEIICHI , HONMA YOSHIO , SAKUMA NORIYUKI , TAKEDA KENICHI , HINODE KENJI
IPC分类号： H01L21/304 , B82B1/00
摘要： PROBLEM TO BE SOLVED: To provide a polishing technique by which the cost of consumables, such as the abrasive, polishing cloth, etc., can be suppressed by suppressing the occurrence of scratchings, peeling, dishing, and erosion without requiring any complicated cleaning process nor abrasive supplying/treating device. SOLUTION: A metallic film 21 formed on an insulating film 23 having a groove is polished with a polishing solution containing no abrasive grains, but an oxidizing substance and another substance which makes oxides water-soluble.

36. 发明专利

JP2000299318A SEMICONDUCTOR DEVICE AND ITS MANUFACTURE 失效
公开(公告)号：JP2000299318A
公开(公告)日：2000-10-24
申请号：JP10821399
申请日：1999-04-15
申请人： HITACHI LTD
发明人： MINE TOSHIYUKI , YOKOYAMA NATSUKI , GOTO YASUSHI , YOSHIGAMI JIRO , TAKEDA KENICHI
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/316 , H01L21/3205 , H01L21/768 , H01L23/522
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device having an interlayer insulating film which is improved in dry etching selectivity ratio. SOLUTION: An interlayer insulating film composed of a plurality of laminated films of different materials is provided on a substrate, and at least one of the laminated films, preferably the lowest laminated film is composed of an aluminum opxide film 206 or of a boron nitride film. Then Cu wiring 214' is formed in a plurality of grooves formed into the interlayer insulating film, so that the adjacent wires of the wiring 214' is separated from each other by the insulating film. The layer lying above the aluminum oxide film 206 is set as an insulating film having a low dielectric constant, for example, an organic SOG film 207.

37. 发明专利

JP2000216160A SEMICONDUCTOR MANUFACTURE AND DEVICE 失效
公开(公告)号：JP2000216160A
公开(公告)日：2000-08-04
申请号：JP1800399
申请日：1999-01-27
申请人： HITACHI LTD
发明人： MIYAKE TATSUYA , OTAKE ICHIRO , PETECK HARVOE , TAKEDA KENICHI , HINODE KENJI
IPC分类号： H01L21/3205 , H01L21/28 , H01L23/52
摘要： PROBLEM TO BE SOLVED: To enable fine strcutures of metal and metal oxide to be formed and to form a metal wiring without burying metal or etching a metal wiring directly, by a method wherein a metal oxide such as a copper oxide or the like is locally reduced by the use of a reducing gas beam of atomic hydrogen or the like. SOLUTION: A titanium nitride film 3 is formed on a silicon oxide substrate 2 in a vacuum so as to prevent copper from diffusing internally, and a copper oxide layer 4 is formed thereon. The copper oxide layer 4 is formed through two methods, one is that copper is evaporated and oxidized by oxygen and the other is that copper oxide is evaporated directly sputtering. A titanium nitride mask 5 is formed on the copper oxide layer 4 through a lithography method, and the titanium nitride mask 5 is irradiated with an atomic hydrogen beam 1 from above. At this point, the substrate 2 provided with the copper oxide layer 4 is kept at a temperature of 300 deg.C or so by heating. The atomic hydrogen beam 1 does not react on the mask 5 but reduces the copper oxide layer 4 reacting on it, by which a copper wiring 6 is formed.

38. 发明专利

JPH11195628A POLISHING METHOD 失效
公开(公告)号：JPH11195628A
公开(公告)日：1999-07-21
申请号：JP27693798
申请日：1998-09-30
申请人： HITACHI LTD
发明人： KONDO SEIICHI , HONMA YOSHIO , SAKUMA NORIYUKI , TAKEDA KENICHI , HINODE KENJI
IPC分类号： B24B37/00 , C09K3/14 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To suppress occurrence of dishing or erosion at the time of forming buried wiring, by mechanically rubbing the surface of a metallic film by using such an abrasive solution that contains abrasive grains at a low concentration of a specific wt.% or lower, and has a pH and an oxidation-reduction potential which fall within the corrosive region of the metallic film. SOLUTION: After a BPSG film (boron- and phosphorus-added silicon oxide film 24 and a silicon oxide film 23 are formed on a silicon substrate 25 on which an impurity-doped layer or insulating film is formed, a groove pattern for wiring is formed into the silicon oxide film 24 to a depth of 500 nm through a lithography process and a dry etching process. Then, after a TiN layer 22 is formed on the silicon oxide film 23 as an adhesive layer, a thin copper film 21 is continuously formed in a vacuum by the sputtering method. After the copper film 21 is formed, the surface of the film 21 is mechanically rubbed by using such an abrasive solution that contains abrasive grains at a low concentration of 0.2 which fall within the corrosive region of the film 21.

39. 发明专利

JPH11135466A POLISHING 失效
公开(公告)号：JPH11135466A
公开(公告)日：1999-05-21
申请号：JP29993797
申请日：1997-10-31
申请人： HITACHI LTD
发明人： KONDO SEIICHI , HONMA YOSHIO , SAKUMA NORIYUKI , TAKEDA KENICHI , HINODE KENJI
IPC分类号： B24B37/00 , B24B37/04 , C09G1/02 , C09K3/14 , H01L21/02 , H01L21/304 , H01L21/321
摘要： PROBLEM TO BE SOLVED: To suppress generation of dishing and erosion when buried wiring is formed and to reduce the damage such as scratch, etc., by mechanically rubbing a metal film surface using a polishing solution containing no or low concentration of polishing abrasive grains, and having a pH and a oxidation reduction potential in the corrosion region of the metal film. SOLUTION: CPM is carried out by rotating a holder 12 supporting a wafer 14 via a backing pad 18 on a fixed panel 11 on which a polishing cloth 17 is applied. A retainer ring 13 is provided so that the wafer does not come off. A polishing solution is dropped on the polishing cloth from a first supply port 15 provided on the fixed panel to perform the CPM, and the supply of the polishing solution is stopped when the CPM is terminated, and pure water is supplied from a second supplying port 16 to perform rinse. Herein, a metal film surface is mechanically rubbed using a polishing solution, containing no polishing abrasive grains or low concentration of not more than 1 wt.% of polishing abrasive grains, and having a pH and an oxidation reduction potential in the corrosion region of the metal film.

40. 发明专利

JPH1140526A WIRING FORMATION METHOD AND MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH1140526A
公开(公告)日：1999-02-12
申请号：JP19619897
申请日：1997-07-22
申请人： HITACHI LTD
发明人： KONDO SEIICHI , HONMA YOSHIO , SAKUMA NORIYUKI , TAKEDA KENICHI , HINODE KENJI
IPC分类号： H01L21/304
摘要： PROBLEM TO BE SOLVED: To perform chemical mechanical polishing at a high polishing speed, by forming a conductive film on a base body comprising a rough surface, removing the conductive film on the protruding part of the base body by chemical mechanical polishing, and making the conductive film contact a liquid containing an anti-corrosion material, for suppressing corrosion of a material forming wiring. SOLUTION: A silicon nitride film and a silicon oxide film are formed in order on a silicon substrate, and a wiring groove pattern is formed in a lithography process and a dry-etching process. Over it, a titanium nitride is film-formed as an adhesive layer, and a copper thin film is continuously film-formed in vacuum by a sputtering method. Then, an abrasive liquid is dropped from a first supply opening 15 onto an abrasive cloth, for chemical mechanical polishing. When the polishing ends, the first supply opening 15 is closed to stop supplying of the abrasive liquid, then an anti-corrosion liquid (water solution of anti- corrosion material or such non-aqueous liquid as alcohol) is supplied from a second supply opening 16 without delay while rotation of a level block 11 and a carrier 12 is kept, after that, flushing with pure water is performed.

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