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    • 32. 发明专利
    • METHOD AND MECHANISM FOR AIR MICRO DETECTION
    • JPH0371007A
    • 1991-03-26
    • JP20677689
    • 1989-08-11
    • HITACHI LTD
    • KAWAMURA YOSHIOKUROSAKI TOSHISHIGE
    • G01B13/00G03F9/00G05D3/12H01L21/027H01L21/30
    • PURPOSE:To easily correct a focus position error due to variation in atmospheric pressure with high accuracy by making an air micro type detector and a reference device different in effective contraction area ratio. CONSTITUTION:The air micro type detector 2 and reference device 7 air made different in effective contraction area ratio to have different sensitivity characteristics and detected pressure and reference pressure vary as the detector 2 and reference device 7 vary in blowout atmospheric pressure. For the purpose, control is performed by a zero-point method so that the detected pressure and reference pressure balance with each other, and then a sample surface can be set at a position matching the atmospheric pressure. Further, alloy, etc., which varies in shape with temperature is used for the contraction part of the reference device 7 and the effective area ratio is varied by a specific quantity corresponding to humidity variation to balance the detected pressure of the detector 2 with the reference pressure of the reference device 7 by the zero-point method, thereby setting the sample surface at a position matching the temperature variation.
    • 33. 发明专利
    • WAFER ALIGNING METHOD AND DEVICE
    • JPH0350752A
    • 1991-03-05
    • JP18463789
    • 1989-07-19
    • HITACHI LTD
    • KOHIDA HIROYUKIKAWAMURA YOSHIOOYAMA MITSUO
    • H01L21/68G05D3/00G05D3/12
    • PURPOSE:To determine the inclination of an orientation flat with high precision by a method wherein, after the orientation flat of a wafer is roughly determined, the wafer is considerably moved in the direction perpendicular to an edge position detecting equipment, and the edge of the wafer is detected. CONSTITUTION:After a table is revolved to a position where an orientation flat is set above an edge position detector, a wafer is moved in the direction perpendicular to the edge position detector. At this time, change of the length up to the wafer end-portion is detected through the edge position detector. When the wafer is moved in the direction perpendicular to the edge position detector in the case where the orientation flat is not perpendicular to the edge position detector, the edge positions to be detected before and after movement of the wafer are different each other. Inclination of the orientation flat is determined by DELTAtheta=tan (DELTAY/DELTAX) where DELTAX is the amount of wafer movement, and DELTAY is the difference of edge positions measured before and after movement. When the amount of wafer movement is increased, the detected difference of edge position is increased, and thereby micro inclination of the orientation flat can be measured without requiring a highly accurate edge position detector.
    • 38. 发明专利
    • ALIGNER
    • JPS63155722A
    • 1988-06-28
    • JP30123786
    • 1986-12-19
    • HITACHI LTD
    • TANAKA SHINJISATO KAZUOTERASAWA TSUNEOKAWAMURA YOSHIO
    • G03F9/00H01L21/027H01L21/30H01L21/68
    • PURPOSE:To accurately align a photomask pattern to a crystal face orientation by specifying a crystal orientation by a parallel beam reflected or diffracted on a substrate crystal to measure the crystal orientation of the single crystal substrate and to regulate the relative position of the substrate to a photomask. CONSTITUTION:A light emitting unit 3 for supplying a parallel beam irradiates the beam to the crystal face of a recess 2 formed on an Si wafer, and a reflected light quantity is measured by a photodetector 4. A rotary table 5 is rotated by a rotary driver 8 at the recess 2 as a center at this time, and stopped at the position where the reflected light quantity supplied to the photodetector 4 becomes maximum. The incident light and the reflected light at a crystal plane (111) 10 formed in the recess and a crystal orientation vector 9 exist in the same plane, and are positioned in an accurate orientation. A pattern transfer mask 6 is positioned to a normal direction by measuring in advance mark holes 11, 11' by other optical systems 12, 12'. The mask 6 is accurately aligned to the crystal orientation of the substrate 1 by this operation to transfer a desired pattern accurately.
    • 39. 发明专利
    • FLOATING TYPE MAGNETIC HEAD
    • JPS6396722A
    • 1988-04-27
    • JP23919486
    • 1986-10-09
    • HITACHI LTD
    • KAWAMURA YOSHIOKATO SHIGEOKANASUGI SEIJIIMAI KUNINORISHIOKAWA TAKEJI
    • G11B5/60G11B21/21
    • PURPOSE:To improve an electromagnetic transform characteristic, and to stabilize magnetic recording with high density, by constituting a floating slider plane with plural plane parts, and one ore more curved plane parts, and providing a magnetic flux gap part at a position making a minimum distance between the projecting part of the floating slider part and a magnetic recording medium. CONSTITUTION:The floating slider part 2 of a magnetic head 1 is formed with two planes intersecting mutually, and at the front of the part, an air flow terminal 4 is formed. And the magnetic flux gap part 3 of the magnetic head 1 is provided on the cross line of two floating slider planes 2 including a point P2, is provided. Thereby, it is possible to make only the magnetic flux gap part 3 approach to a magnetic disk 8 that is the magnetic recording medium, and to expand the distance between the floating slider plane 2 and the magnetic disk 8 comparatively, and an air layer passing the slider floating plane 2 is thickened, and it is possible to obtain a stable floating characteristic from the standpoint of aerodynamics. In this way, it is possible to obtain the magnetic head with few frequency of head crash due to contact with the magnetic disk, and to attain the magnetic recording with high reliability and high density.