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    • 31. 发明申请
    • Positioning method, processing system, measurement method of substrate loading repeatability, position measurement method, exposure method, substrate processing apparatus, measurement method, and measurement apparatus
    • 定位方法,处理系统,基板装载重复性的测量方法,位置测量方法,曝光方法,基板处理装置,测量方法和测量装置
    • US20080013089A1
    • 2008-01-17
    • US11517512
    • 2006-09-08
    • Yuuki IshiiShinichi Okita
    • Yuuki IshiiShinichi Okita
    • G01B11/00
    • G03F9/7011G03F9/7019H01L21/681H01L21/682
    • An edge of a surface to be measured of wafer and each of search alignment marks on the wafer are detected by an inline measurement instrument or the like that operates independently of an exposure apparatus, and position coordinates of the search marks in an X′Y′ coordinate system, which is a two-dimensional coordinate system substantially parallel to the surface to be measured and is set by a position of a notch of the wafer, are measured. Then, in pre-alignment performed when loading the wafer into the exposure apparatus, the edge of the wafer is detected, and from the detection results, position information of the object in the X′Y′ coordinate system is measured. Further, a relative position in the X′Y′ coordinate system of the wafer to be loaded into the exposure apparatus based on measurement results of the pre-alignment with respect to a measurement field of an alignment system that measures positions of the search marks on the wafer is adjusted based on measurement results of the inline measurement instrument or the like.
    • 通过与曝光装置无关地进行操作的在线测量仪器等来检测待测晶片的边缘和晶片上的每个检索对准标记,并将搜索标记的位置坐标X'Y' 坐标系,其是基本上平行于待测量表面并由晶片的凹口的位置设置的二维坐标系。 然后,在将晶片装载到曝光装置中进行的预对准中,检测晶片的边缘,并且根据检测结果,测量X'Y'坐标系中的对象的位置信息。 此外,基于测量对准系统的测量场的测量结果,基于测量位置的测量结果,将待装载到曝光设备中的晶片的X'Y'坐标系中的相对位置 基于在线测量仪器等的测量结果调整晶片。
    • 32. 发明申请
    • Adjustment method, substrate processing method, substrate processing apparatus, exposure apparatus, inspection apparatus, measurement and/or inspection system, processing apparatus, computer system, program and information recording medium
    • 调整方法,基板处理方法,基板处理装置,曝光装置,检查装置,测量和/或检查系统,处理装置,计算机系统,程序和信息记录介质
    • US20070219736A1
    • 2007-09-20
    • US11706377
    • 2007-02-15
    • Shinichi Okita
    • Shinichi Okita
    • G06F19/00
    • G03F7/70525
    • When a host issues an analysis order that specifically instructs the analytical contents to an analytical apparatus (step 401), the analytical apparatus collects two types of measurement and/or inspection results from a measurement and/or inspection instrument (steps 403 to 409), and in step 411, the analytical apparatus analyzes the measurement and/or inspection results and optimizes processing conditions of a series of processes related to wafer W. In step 411, data related to a processing state of a processing apparatus is acquired from the processing apparatus as needed. In step 413, the measurement and/or inspection results and the optimization results are accumulated in a database, and the optimization results are transmitted to various processing apparatuses (including the measurement and/or inspection instrument). After that, the analytical apparatus sends a processing end notice to the host (step 417).
    • 当主机向分析装置发出专门指示分析内容的分析顺序时(步骤401),分析装置从测量和/或检验仪器收集两种类型的测量和/或检验结果(步骤403至409) 并且在步骤411中,分析装置分析测量和/或检查结果并优化与晶片W相关的一系列处理的处理条件。在步骤411中,从处理装置获取与处理装置的处理状态相关的数据 如所须。 在步骤413中,将测量和/或检查结果和优化结果累积在数据库中,并将优化结果发送到各种处理设备(包括测量和/或检验仪器)。 之后,分析装置向主机发送处理结束通知(步骤417)。