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31. 发明授权

US08669832B2 Acoustic wave device and acoustic wave filter 有权
标题翻译：声波装置和声波滤波器
公开(公告)号：US08669832B2
公开(公告)日：2014-03-11
申请号：US13125633
申请日：2010-02-23
申请人： Hiroki Kamiguchi , Hidekazu Nakanishi , Yosuke Hamaoka , Shoji Okamoto , Hiroyuki Nakamura
发明人： Hiroki Kamiguchi , Hidekazu Nakanishi , Yosuke Hamaoka , Shoji Okamoto , Hiroyuki Nakamura
IPC分类号： H03H9/64 , H03H9/25 , H03H9/42
CPC分类号： H03H9/02992 , H03H3/08 , H03H9/02685 , H03H9/14517
摘要： An acoustic wave device includes an interdigital transducer (IDT) electrode and a separate electrode facing the IDT electrode. The IDT electrode includes first and second comb-shaped electrode facing each other. The first comb-shaped electrode includes a first bus bar, first interdigitated electrode fingers, and first dummy electrode fingers. The second comb-shaped electrode includes a second bus bar second interdigitated electrode fingers interdigitated with the first interdigitated electrode fingers, second dummy electrode fingers facing the first interdigitated electrode fingers, weighted parts, and a non-weighted part. The weighted parts have electrodes at spaces between the second interdigitated electrode fingers and the second dummy electrode fingers. In the non-weighted part, there is no electrode at a space out of the spaces which is closest to the separate electrode in the non-interdigitated region. This acoustic wave device prevents short circuits between the IDT electrode and the separate electrode, and provides excellent characteristics of suppressing unwanted waves.
摘要翻译：声波装置包括叉指式换能器（IDT）电极和面向IDT电极的单独电极。 IDT电极包括彼此面对的第一和第二梳状电极。第一梳状电极包括第一汇流条，第一交叉指状电极指和第一虚拟电极指。所述第二梳状电极包括与所述第一交叉指状物电极指相交叉的第二汇流条第二交叉指状电极指，所述第二虚拟电极指指向所述第一交叉指状电极指，所述加权部和非加权部。加权部分在第二交叉指状电极指和第二虚拟电极指之间的空间具有电极。在非加重部分中，在非叉指区域中最靠近分离电极的空间之外的空间中不存在电极。该声波装置防止IDT电极和分离电极之间的短路，并且提供抑制不想要的波的优良特性。

32. 发明申请

US20140001919A1 ELASTIC WAVE ELEMENT 有权
标题翻译：弹性波形元件
公开(公告)号：US20140001919A1
公开(公告)日：2014-01-02
申请号：US14004163
申请日：2012-03-05
申请人： Tomoya Komatsu , Hiroyuki Nakamura , Tetsuya Tsurunari , Joji Fujiwara , Hidekazu Nakanishi
发明人： Tomoya Komatsu , Hiroyuki Nakamura , Tetsuya Tsurunari , Joji Fujiwara , Hidekazu Nakanishi
IPC分类号： H01L41/047
CPC分类号： H03H9/25 , H01L41/047 , H03H9/02818 , H03H9/02992
摘要： An elastic wave element includes a piezoelectric substrate, an IDT electrode, and a first dielectric film. The IDT electrode includes a first bus bar electrode, a second bus bar electrode, first electrode fingers, and second electrode fingers. The piezoelectric substrate includes a bus bar electrode region, an alternately disposed region, and an intermediate region. The first dielectric film is formed in at least a part of the intermediate region, and formed of a medium in which acoustic velocity of a transverse wave propagating in the first dielectric film is lower than acoustic velocity of a main elastic wave in the alternately disposed region.
摘要翻译：弹性波元件包括压电基片，IDT电极和第一电介质膜。 IDT电极包括第一母线电极，第二母线电极，第一电极指和第二电极指。压电基板包括汇流条电极区域，交替设置的区域和中间区域。第一电介质膜形成在中间区域的至少一部分中，并且由在第一电介质膜中传播的横波的声速低于交替设置区域中的主弹性波的声速的介质形成。

33. 发明授权

US08564172B2 Elastic wave element and electronic apparatus using same 有权
标题翻译：弹性波形元件和使用它的电子设备
公开(公告)号：US08564172B2
公开(公告)日：2013-10-22
申请号：US13260798
申请日：2010-04-19
申请人： Shun-ichi Seki , Hiroki Kamiguchi , Hidekazu Nakanishi , Hiroyuki Nakamura
发明人： Shun-ichi Seki , Hiroki Kamiguchi , Hidekazu Nakanishi , Hiroyuki Nakamura
IPC分类号： H03H9/25
CPC分类号： H03H9/02842 , H03H3/10 , H03H9/02834 , H03H9/725
摘要： An acoustic wave element includes a piezoelectric body, first and second interdigital transducer (IDT) electrodes provided on an upper surface of the piezoelectric body, and a first dielectric layer provided on the upper surface of the piezoelectric body to cover the first and second IDT electrodes. The first dielectric layer has a first part directly above the first IDT electrode and a second part directly above the second IDT electrode. The height of an upper surface of the second part of the first dielectric layer is larger than the height of an upper surface of the first part of the first dielectric layer. This acoustic wave element has a preferable temperature characteristic and electromechanical coupling factor.
摘要翻译：声波元件包括压电体，设置在压电体的上表面上的第一和第二叉指式换能器（IDT）电极，以及设置在压电体的上表面上以覆盖第一和第二IDT电极的第一介电层。第一电介质层具有位于第一IDT电极正上方的第一部分和位于第二IDT电极正上方的第二部分。第一介电层的第二部分的上表面的高度大于第一介电层的第一部分的上表面的高度。该声波元件具有优选的温度特性和机电耦合系数。

34. 发明授权

US08482363B2 Surface acoustic wave filter device, duplexer including the same, and electronic apparatus including the same 有权
标题翻译：表面声波滤波器装置，包括该双工器的双工器，以及包括它们的电子设备
公开(公告)号：US08482363B2
公开(公告)日：2013-07-09
申请号：US12878104
申请日：2010-09-09
申请人： Joji Fujiwara , Tetsuya Tsurunari , Hiroyuki Nakamura , Rei Goto
发明人： Joji Fujiwara , Tetsuya Tsurunari , Hiroyuki Nakamura , Rei Goto
IPC分类号： H03H9/72 , H03H9/64
CPC分类号： H03H9/008 , H03H9/0071 , H03H9/725
摘要： A surface acoustic wave (SAW) filter device includes an input port for receiving an unbalanced signal, a pair of input/output ports, a first SAW filter for receiving the unbalanced signal from the input port and outputting balanced signals to the pair of input/output ports, a second SAW filter for receiving the balanced signals output from the pair of input/output ports and outputting balanced signals, and a pair of output ports for outputting the balanced signals output from the second SAW filter. The first SAW filter includes a first longitudinally-coupled SAW resonator having a first unbalanced signal input port and first and second balanced signal output ports, and a second longitudinally-coupled SAW resonator having a second unbalanced signal input port and third and fourth balanced signal output port. The first and second unbalanced signal input ports are electrically connected to the input port. The first and third balanced signal output ports both are electrically connected to one of the pair of input/output ports. The second and fourth balanced signal output ports both are electrically connected to another of the pair of input/output ports. This SAW filter device can suppress spurious and has a small insertion loss.
摘要翻译：表面声波（SAW）滤波器装置包括用于接收不平衡信号的输入端口，一对输入/输出端口，用于从输入端口接收不平衡信号的第一SAW滤波器，并将平衡信号输出到输入/ 输出端口，第二SAW滤波器，用于接收从一对输入/输出端口输出的平衡信号并输出平衡信号;以及一对输出端口，用于输出从第二SAW滤波器输出的平衡信号。第一SAW滤波器包括具有第一不平衡信号输入端口和第一和第二平衡信号输出端口的第一纵向耦合SAW谐振器，以及具有第二不平衡信号输入端口和第三和第四平衡信号输出端的第二纵向耦合SAW谐振器港口。第一和第二不平衡信号输入端口电连接到输入端口。第一和第三平衡信号输出端口都电连接到一对输入/输出端口中。第二和第四平衡信号输出端口都电连接到该对输入/输出端口中的另一个。该SAW滤波器装置可以抑制杂散并具有小的插入损耗。

35. 发明授权

US08384495B2 Acoustic wave duplexer 有权
标题翻译：声波双工器
公开(公告)号：US08384495B2
公开(公告)日：2013-02-26
申请号：US12993893
申请日：2009-05-14
申请人： Joji Fujiwara , Tetsuya Tsurunari , Hiroyuki Nakamura , Rei Goto
发明人： Joji Fujiwara , Tetsuya Tsurunari , Hiroyuki Nakamura , Rei Goto
IPC分类号： H03H9/72 , H03H9/64
CPC分类号： H03H9/725 , H03H9/14597
摘要： An acoustic wave duplexer includes a piezoelectric substrate, a first filter and a second filter whose center frequency is higher than that of the first filter, the first and second filters being provided on the piezoelectric substrate. The first filter is structured as a ladder type. A resonator positioned nearest to an antenna terminal out of series-arm resonators is designated as a first resonator. A pitch of a comb-shaped electrode structuring the first resonator is set such that a bulk wave emission frequency of the first resonator becomes higher than a passband of the second filter.
摘要翻译：声波双工器包括压电基板，第一滤波器和中心频率高于第一滤波器的第二滤波器，第一和第二滤波器设置在压电基板上。第一个滤波器被构造为梯形图。最靠近串联臂谐振器的天线端子的谐振器被指定为第一谐振器。构成第一谐振器的梳状电极的间距被设定为使得第一谐振器的体波发射频率高于第二滤波器的通带。

36. 发明申请

US20130026881A1 ACOUSTIC WAVE ELEMENT 审中-公开
标题翻译：声波元件
公开(公告)号：US20130026881A1
公开(公告)日：2013-01-31
申请号：US13639119
申请日：2011-05-31
申请人： Shoji Okamoto , Rei Goto , Hidekazu Nakanishi , Hiroyuki Nakamura
发明人： Shoji Okamoto , Rei Goto , Hidekazu Nakanishi , Hiroyuki Nakamura
IPC分类号： H01L41/047
CPC分类号： H03H9/14541 , H03H9/0222 , H03H9/02559
摘要： An IDT electrode includes a first electrode layer mainly made of Mo disposed above the piezoelectric body and a second electrode layer mainly made of Al disposed above the first electrode layer. The IDT electrode has a total thickness not more than 0.15λ. The first electrode layer has a thickness not less than 0.05λ. The second electrode layer has a thickness not less than 0.025λ.
摘要翻译： IDT电极包括主要由设置在压电体上方的Mo形成的第一电极层和设置在第一电极层上方的主要由Al制成的第二电极层。 IDT电极的总厚度不大于0.15λ。第一电极层的厚度不小于0.05λ。第二电极层的厚度不小于0.025λ。

37. 发明申请

US20120325862A1 PUMP 有权
公开(公告)号：US20120325862A1
公开(公告)日：2012-12-27
申请号：US13520279
申请日：2011-01-17
申请人： Katsuhito Kuwahara , Hiroyuki Nakamura , Toru Toma
发明人： Katsuhito Kuwahara , Hiroyuki Nakamura , Toru Toma
IPC分类号： G01F11/00
CPC分类号： B05B11/3053 , B05B11/3023 , B05B11/3097
摘要： An improved pump is provided that is capable of achieving excellent back suction function by using a depression head, without compromising the ease of depression operations of the head due to the additional function. The pump includes a depression head and an annular piston. The depression head is urged upward and is relatively displaceable with respect to the stem. When depressed, a lever member of the depression head operates to open a discharge opening. An annular piston opens a discharge valve, in an uppermost displacement position and closes the discharge valve in a lowermost displacement position. Back suction is caused due to a negative pressure state occurring in the stem until the discharge valve seat is closed by the annular piston during upward displacement of the stem.
摘要翻译：提供了一种改进的泵，其能够通过使用凹陷头来实现优异的背吸功能，而不会由于附加功能而不损害头部的按压操作的容易性。泵包括凹陷头和环形活塞。凹陷头被向上推动并且相对于杆相对移位。当压下时，凹陷头的杠杆构件操作以打开排出口。环形活塞在最上位移位置打开排放阀，并在最低位移位置关闭排放阀。由于在杆的向上位移期间由于负压状态而引起背吸，直到排出阀座被环形活塞封闭。

38. 发明授权

US08338927B2 Semiconductor device with the leads projected from sealing body 有权
标题翻译：具有从密封体突出的引线的半导体器件
公开(公告)号：US08338927B2
公开(公告)日：2012-12-25
申请号：US13225788
申请日：2011-09-06
申请人： Hiroyuki Nakamura , Atsushi Nishikizawa , Nobuya Koike
发明人： Hiroyuki Nakamura , Atsushi Nishikizawa , Nobuya Koike
IPC分类号： H01L21/44
CPC分类号： H01L21/4835 , H01L23/49541 , H01L23/49548 , H01L23/49582 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/97 , H01L2224/45144 , H01L2224/48247 , H01L2224/48465 , H01L2224/49171 , H01L2224/97 , H01L2924/01005 , H01L2924/01006 , H01L2924/01014 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/0104 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/0106 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/10253 , H01L2924/10329 , H01L2924/14 , H01L2924/15788 , H01L2924/181 , H01L2924/351 , H05K3/3426 , H05K2201/10795 , H05K2201/10909 , Y02P70/613 , H01L2924/00014 , H01L2224/85 , H01L2924/00 , H01L2924/00012
摘要： The semiconductor device includes a semiconductor chip, a chip mounting portion, a suspension lead, and a plurality of leads. Each of the plurality of leads has a first part and a second part, and the suspension lead has a first part and a second part. The first part of each of the plurality of leads and the suspension lead project from the plurality of side surfaces of the sealing body, respectively. Parts of the side surfaces of the plurality of leads and the suspension lead are exposed from the plurality of side surfaces of the sealing body, respectively. An area of the obverse surface of the first part of the suspension lead is larger than an area of the obverse surface of the first part of each of the plurality of leads in a plan view.
摘要翻译：半导体器件包括半导体芯片，芯片安装部分，悬挂引线和多个引线。多个引线中的每一个具有第一部分和第二部分，并且悬架引线具有第一部分和第二部分。多个引线中的每一个的第一部分和悬挂引线分别从密封体的多个侧表面伸出。多个引线的侧面部分和悬挂引线分别从密封体的多个侧面露出。在俯视图中，悬架引线的第一部分的正面的面积大于多根引线中的每一个的第一部分的正面的面积。

39. 发明申请

US20120313724A1 ELASTIC WAVE FILTER DEVICE AND ANTENNA DUPLEXER USING SAME 有权
标题翻译：弹性波过滤装置和使用相同的天线双工器
公开(公告)号：US20120313724A1
公开(公告)日：2012-12-13
申请号：US13509641
申请日：2010-11-10
申请人： Tetsuya Tsurunari , Joji Fujiwara , Hiroyuki Nakamura
发明人： Tetsuya Tsurunari , Joji Fujiwara , Hiroyuki Nakamura
IPC分类号： H03H9/72 , H03H9/64
CPC分类号： H03H9/725
摘要： An elastic wave filter device includes a longitudinally coupled resonator-type elastic wave filter formed on a piezoelectric substrate; and a ladder-type elastic wave filter connected to the resonator-type elastic wave filter. The resonator-type filter includes an input IDT and an output IDT. The ladder-type filter includes a series arm resonator and a parallel arm resonator. A first ground electrode connected to the parallel arm resonator is electrically separated from a second ground electrode connected to at least one of the input IDT and the output IDT.
摘要翻译：弹性波滤波器装置包括形成在压电基片上的纵向耦合的谐振器型弹性波滤波器; 连接到谐振器型弹性波滤波器的梯形弹性波滤波器。谐振器型滤波器包括输入IDT和输出IDT。梯型滤波器包括串联臂谐振器和并联臂谐振器。连接到并联臂谐振器的第一接地电极与连接到输入IDT和输出IDT中的至少一个的第二接地电极电隔离。

40. 发明授权

US08299600B2 Semiconductor device and manufacturing method thereof 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US08299600B2
公开(公告)日：2012-10-30
申请号：US12619561
申请日：2009-11-16
申请人： Yukihiro Sato , Katsuhiko Funatsu , Hiroyuki Nakamura
发明人： Yukihiro Sato , Katsuhiko Funatsu , Hiroyuki Nakamura
IPC分类号： H01L23/48
CPC分类号： H01L23/4334 , H01L23/49524 , H01L23/49562 , H01L24/32 , H01L24/33 , H01L24/37 , H01L24/40 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/83 , H01L24/91 , H01L2224/0603 , H01L2224/29111 , H01L2224/2919 , H01L2224/32245 , H01L2224/37011 , H01L2224/371 , H01L2224/40095 , H01L2224/40245 , H01L2224/45015 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/4847 , H01L2224/48599 , H01L2224/73215 , H01L2224/73219 , H01L2224/73221 , H01L2224/73265 , H01L2224/83801 , H01L2224/84801 , H01L2224/85013 , H01L2224/92247 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/0134 , H01L2924/014 , H01L2924/0665 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/15747 , H01L2924/181 , H01L2924/30107 , H01L2924/351 , H01L2924/00 , H01L2924/00012 , H01L2224/85399 , H01L2224/05599
摘要： A semiconductor device is provided with improved reliability. A semiconductor chip is mounted over a chip mounting portion of a lead frame via solder. A metal plate is arranged over a source pad of the semiconductor chip and a lead portion of a lead frame via solder. A solder reflow process is performed thereby to bond the semiconductor chip over the chip mounting portion with a solder, and to bond the metal plate to the source pad and the lead portion with the other solders. The lead frame is formed of a copper alloy, and thus has its softening temperature higher than the temperature of the solder reflow process. The metal plate is formed of oxygen-free copper, and has its softening temperature lower than the temperature of the solder reflow process, whereby the metal plate is softened in the solder reflow process. Thereafter, a gate pad electrode of the semiconductor chip is coupled to a lead portion via the wire, a sealing resin portion is formed, and then the lead frame is cut.
摘要翻译：半导体器件具有改进的可靠性。通过焊料将半导体芯片安装在引线框架的芯片安装部分上。金属板通过焊料布置在半导体芯片的源极焊盘和引线框架的引线部分的上方。进行焊料回流工艺，从而通过焊料将半导体芯片连接在芯片安装部分上，并将金属板与其它焊料接合到源极焊盘和引线部分。引线框架由铜合金形成，因此其软化温度高于焊料回流工艺的温度。金属板由无氧铜形成，其软化温度低于焊锡回流工序的温度，由此金属板在回流焊工艺中软化。此后，半导体芯片的栅极焊盘电极通过导线连接到引线部分，形成密封树脂部分，然后引线框架被切割。

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