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    • 33. 发明授权
    • Electron beam apparatus
    • 电子束装置
    • US06504164B2
    • 2003-01-07
    • US09740662
    • 2000-12-19
    • Akira YonezawaSeiji MoritaMitsuyoshi Satou
    • Akira YonezawaSeiji MoritaMitsuyoshi Satou
    • H01J3728
    • H01J37/28H01J37/141
    • The invention is to observe semiconductor wafers with higher resolution at a low acceleration voltage—in particular, achieving such high-resolution observability when a wafer is inclined or tilted at large angles. A composite lens is used which consists essentially of a single-pole or monopole magnetic field type lens and an electrostatic field invasive lens whereas an electrode of the electrostatic field invasive lens which opposes the wafer is made of a magnetic material while letting a high voltage of the negative polarity be applied to this electrode and the wafer. Even when the wafer is tilted, any astigmatism and axis failure will hardly occur.
    • 本发明是在低加速电压下观察具有更高分辨率的半导体晶片,特别是当晶片以大角度倾斜或倾斜时获得这种高分辨率可观察性。 使用复合透镜,其基本上由单极或单极磁场型透镜和静电场侵入透镜组成,而与晶片相对的静电场侵入透镜的电极由磁性材料制成,同时使高 对该电极和晶片施加负极性。 即使当晶片倾斜时,几乎不会发生任何散光和轴故障。