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    • 35. 发明授权
    • Laser sintering apparatus
    • 激光烧结设备
    • US06717106B2
    • 2004-04-06
    • US10236930
    • 2002-09-09
    • Kazuhiko NaganoYoji Okazaki
    • Kazuhiko NaganoYoji Okazaki
    • B23K2602
    • B23K26/0665B23K26/0604B23K26/0613B23K26/0643B23K26/0648B29C64/153B33Y30/00H01S3/067H01S3/0941H01S3/109H01S3/1613H01S3/1653H01S5/32341
    • A laser sintering apparatus for realizing high-speed and high-precision forming. When a first position of an exposure unit is decided by an XY-positioning mechanism, a micromirror of a DMD is turned on and off in accordance with image data in a region corresponding to the first position and a laser beam in a predetermined region including ultraviolet is supplied to the DMD and modulated for each pixel in accordance with image data. A laser beam reflected in the direction of a reflection mirror is reflected therefrom in the direction of a surface of a powdered body. A region having a predetermined area on the surface of the powdered body is exposed by the laser beam, and the exposed portion is thereby cured. Similarly, by repeating movement of and exposure with the exposure unit, the entire surface of the powdered body is exposed.
    • 一种用于实现高速高精度成形的激光烧结装置。 当通过XY定位机构确定曝光单元的第一位置时,根据包括紫外线的预定区域中的与第一位置相对应的区域和激光束的图像数据,DMD的微镜被打开和关闭 被提供给DMD并且根据图像数据针对每个像素进行调制。 在反射镜的方向上反射的激光束从粉末体的表面的方向反射。 在该粉体的表面上具有规定面积的区域被激光束曝光,露出部由此固化。 类似地,通过重复曝光单元的移动和曝光,粉末体的整个表面被暴露。
    • 36. 发明授权
    • Variable-wavelength semiconductor laser device controlled by strength of electric field applied to wavelength selection element
    • 由波长选择元件施加的电场强度控制的可变波长半导体激光器件
    • US06647029B1
    • 2003-11-11
    • US09521197
    • 2000-03-07
    • Yoji Okazaki
    • Yoji Okazaki
    • H01S310
    • H01S5/146H01S5/1064H01S5/147
    • A variable-wavelength semiconductor laser device containing a tapered-stripe semiconductor laser amplifier and a wavelength selection unit. Light emitted from a back end surface of the tapered-stripe semiconductor laser amplifier is incident on the wavelength selection unit. The wavelength selection unit selects a portion of the light having a specific wavelength, and returns the selected portion to the tapered-stripe semiconductor laser amplifier. The tapered-stripe semiconductor laser amplifier amplifies the returned portion of the light to emit the amplified light from a front-end surface of the tapered-stripe semiconductor laser amplifier. The wavelength selection unit is constructed so that the specific wavelength can be changed according to strength of an electric field applied to the wavelength selection unit. An electric field applying unit is provided for applying the electric field to the wavelength selection unit. The wavelength selection unit may contain a fiber grating, a birefringent filter, or an optical waveguide element having therein a reflection grating. In this case, the specific wavelength selected by the wavelength selection unit can be changed by changing a refraction index and/or an effective pitch of the grating, which can be changed by adjusting the strength of the electric field.
    • 一种可变波长半导体激光装置,包括锥形半导体激光放大器和波长选择单元。 从锥形条状半导体激光放大器的后端表面发射的光入射到波长选择单元。 波长选择单元选择具有特定波长的光的一部分,并将所选择的部分返回到锥形半导体激光放大器。 锥形半导体半导体激光放大器放大反射部分的光以从锥形半导体激光放大器的前端表面发射放大的光。 波长选择单元被构造成可以根据施加到波长选择单元的电场的强度来改变特定波长。 提供电场施加单元以将电场施加到波长选择单元。 波长选择单元可以包含光纤光栅,双折射滤光器或其中具有反射光栅的光波导元件。 在这种情况下,可以通过改变光栅的折射率和/或有效间距来改变由波长选择单元选择的特定波长,这可以通过调整电场的强度来改变。