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    • 32. 发明授权
    • Group III nitride semiconductor light-emitting device and method for producing the same
    • III族氮化物半导体发光器件及其制造方法
    • US08323994B2
    • 2012-12-04
    • US12585630
    • 2009-09-21
    • Masao KamiyaTakashi Hatano
    • Masao KamiyaTakashi Hatano
    • H01L21/00H01L33/00
    • H01L33/42H01L33/145H01L33/32
    • A method for producing a Group III nitride semiconductor light-emitting device with a face-up configuration including a p-type layer and a transparent electrode composed of ITO is provided in which a p-pad electrode on the transparent electrode and an n-electrode on an n-type layer are simultaneously formed. The p-pad electrode and the n-electrode are composed of Ni/Au. The resultant structure is heat treated at 570° C. and good contact can be established in the p-pad electrode and the n-electrode. The heat treatment also provides a region in the transparent electrode immediately below the p-pad electrode, the region and the p-type layer having a higher contact resistance than that of the other region of the transparent electrode and the p-type layer. Thus, a region of an active layer below the provided region does not emit light and hence the light-emitting efficiency of the light-emitting device can be increased.
    • 提供一种具有包括p型层和由ITO构成的透明电极的面朝上构造的III族氮化物半导体发光器件的方法,其中在透明电极上的p焊盘电极和n电极 在n型层上同时形成。 p焊盘电极和n电极由Ni / Au组成。 所得结构在570℃下进行热处理,并可在p焊盘电极和n电极中建立良好的接触。 该热处理还在p型焊盘电极正下方的透明电极中提供区域,该区域和p型层具有比透明电极和p型层的其它区域更高的接触电阻。 因此,在所提供的区域之下的有源层的区域不发光,因此可以提高发光器件的发光效率。