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    • 34. 发明申请
    • PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD
    • 等离子体加工设备和等离子体处理方法
    • US20100051584A1
    • 2010-03-04
    • US12578844
    • 2009-10-14
    • Shogo OKITAHiromi ASAKURASyouzou WATANABERyuzou HOUCHINHiroyuki SUZUKI
    • Shogo OKITAHiromi ASAKURASyouzou WATANABERyuzou HOUCHINHiroyuki SUZUKI
    • B44C1/22C23C16/54C23F1/08B01J19/08
    • F27D5/0068H01J37/321H01J37/32706H01L21/3065H01L21/67069
    • A tray 15 for a dry etching apparatus 1 has substrate accommodation holes 19A to 19D penetrating thickness direction and a substrate support portion 21 supporting an outer peripheral edge portion of a lower surface 2a of a substrate 2. A dielectric plate 23 has a tray support surface 28 supporting a lower surface of the tray 15, substrate placement portions 29A through 29D inserted from a lower surface side of the tray 15 into the substrate accommodation holes 19A through 19D and having a substrate placement surface 31 at its upper end surface for placing the substrate 2. A dc voltage applying mechanism 43 applies a dc voltage to an electrostatic attraction electrode 40. A heat conduction gas supply mechanism 45 supplies a heat conduction gas between the substrate 2 and substrate placement surface 31. The substrate 2 can be retained on the substrate placement surface 31 with high degree of adhesion. This results in that the cooling efficiency of the substrate 2 is improved and processing is uniformed at the entire region of the substrate surface including the vicinity of the outer peripheral edge.
    • 用于干蚀刻装置1的托盘15具有穿透厚度方向的基板容纳孔19A至19D以及支撑基板2的下表面2a的外周边缘部分的基板支撑部21.电介质板23具有托盘支撑表面 28,支撑托盘15的下表面,从托盘15的下表面侧插入到基板容纳孔19A至19D中的基板放置部分29A至29D,并且在其上端面具有用于放置基板的基板放置表面31 直流电压施加机构43对静电吸引电极40施加直流电压。导热气体供给机构45在基板2和基板配置面31之间供给导热气体。基板2能够保持在基板 放置面31具有高度的粘合力。 这导致基板2的冷却效率提高,并且在包括外周边缘附近的基板表面的整个区域处理均匀。