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31. 发明专利

JP2003213917A PERFORATED FLOOR OF CLEAN ROOM 审中-公开
公开(公告)号：JP2003213917A
公开(公告)日：2003-07-30
申请号：JP2002014936
申请日：2002-01-24
申请人： OMI TADAHIRO , KUMAGAI GUMI CO LTD
发明人： OMI TADAHIRO , SUZUKI HIROKAZU , MURAOKA KENJI , MIURA MASAYASU
IPC分类号： E04H5/02 , E04F15/024 , E04F15/18
摘要： PROBLEM TO BE SOLVED: To solve such a problem that in a perforated floor of conventional clean rooms, since the end of each perforated floor plate forming the perforated floor is not electrically connected, the floor can not shade electromagnetic waves of a high frequency band. SOLUTION: In the perforated floor of a clean room in which a plurality of perforated floor plates 1 constituted of a conductive body having a plurality of formed holes are laid so as to arrange side by side. The external peripheral end of adjacent perforated floor plates 1 are electrically connected by a shield gasket 4, and the corner 6 of each perforated floor plate 1 is fixedly screwed in a metallic base piece 5 through a shield packing 7. In this way, each perforated floor plate 1 is electrically connected to a steel joist 60. COPYRIGHT: (C)2003,JPO

32. 发明专利

JP2003208929A EARTHING SYSTEM OF BUILDING 审中-公开
公开(公告)号：JP2003208929A
公开(公告)日：2003-07-25
申请号：JP2002006987
申请日：2002-01-16
申请人： OMI TADAHIRO , KUMAGAI GUMI CO LTD
发明人： OMI TADAHIRO , SHIRAI YASUYUKI , SUZUKI HIROKAZU , ENDO TETSUO
IPC分类号： E04H9/14 , H01R4/66 , H02B1/16
摘要： PROBLEM TO BE SOLVED: To provide an earthing system of a building, which can protect an electronic equipment from lightning and lightning surge, electromagnetic wave noise or the like by eliminating potential differences between the earth and the equipment installed in the building. SOLUTION: Steel frames 14a, 14b of a trunk body 13 and the earths of equipments 16a to 16c, 17a to 17c concentrated at distribution boards 18a, 18b of respective stories are electrically connected respectively, and plural earth piles 11 are driven directly beneath the building 10, and the earth piles 11 are mutually connected by embedding a mesh layer 12 formed by twisted conductive wires, and by electrically connecting this embedding mesh layer 12 and the steel frames 14a, 14b, the earthing of the building 10 is made to be carried out. COPYRIGHT: (C)2003,JPO

33. 发明专利

JP2003188157A PLASMA PROCESSING APPARATUS 审中-公开
公开(公告)号：JP2003188157A
公开(公告)日：2003-07-04
申请号：JP2002370897
申请日：2002-12-20
申请人： OMI TADAHIRO , TOKYO ELECTRON LTD
发明人： OMI TADAHIRO , HIRAYAMA MASAKI
IPC分类号： C23C16/44 , C23C16/503 , H01L21/3065 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To provide a small, low-cost stage cooling mechanism for a plasma processing apparatus, which performs such plasma processing as filming or dry-etching a substrate that is an object to be processed. SOLUTION: For a plasma processing apparatus, there are provided a conductive stage 301 that places an object in a container, a structure that can apply a DC voltage or high frequency power to this stage 301, a cooling passage 303, provided in the stage 301 and made of high thermal conductive metal, for cooling the object, and a high thermal conductivity insulation 304, provided between the stage 301 and this cooling passage 303, which has high heat conductivity so as to transmit heat of the stage 301 to the refrigerant, and has high electrical insulation so as not to transmit the DC voltage or high frequency power applied to the stage 301 to the refrigerant. COPYRIGHT: (C)2003,JPO

34. 发明专利

JP2003133232A METHOD AND DEVICE FOR MICROWAVE PLASMA TREATMENT, AND MICROWAVE POWER SUPPLY DEVICE 有权
公开(公告)号：JP2003133232A
公开(公告)日：2003-05-09
申请号：JP2001322529
申请日：2001-10-19
申请人： GOTO NAOHISA , OMI TADAHIRO , TOKYO ELECTRON LTD
发明人： GOTO NAOHISA , OMI TADAHIRO , HIRAYAMA MASAKI , GOTO TETSUYA
IPC分类号： H05H1/46 , B01J19/08 , C23C16/511 , H01J37/32 , H01L21/205 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a microwave plasma treatment device capable of efficiently supplying a microwave supplied from a microwave generator to an antenna member from a waveguide tube, a microwave plasma processing method and a microwave power supply device. SOLUTION: The microwave generated from the microwave generator 24 is propagated by the waveguide tube 22. The waveguide tube 22 has a single microwave emission opening 22a for outputting a microwave in a tube wall 22b facing a slow wave plate 18. Wavelength of a microwave emitted from the microwave emission opening 22a is shortened by the slow wave plate 18, and is radiated into a space in a treatment container 12 by a large number of slit pairs 30 provided in the antenna member 17.

35. 发明专利

JP2003103201A GAS-LIQUID MIXING NOZZLE AND METHOD FOR SUPPLYING GAS- LIQUID MIXED FLUID 审中-公开
公开(公告)号：JP2003103201A
公开(公告)日：2003-04-08
申请号：JP2001303321
申请日：2001-09-28
申请人： OMI TADAHIRO , UCT KK
发明人： ENDO TAMIO , SATO JUN , AMANO YASUHIKO , SHIRAI YASUYUKI , OMI TADAHIRO
IPC分类号： B08B3/02 , B05B1/02 , B05B7/04 , B05D1/02 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To efficiently carry out washing within a short time without deteriorating the capability of product even in the case an object to be washed is an ultrafine electronic part extremely sensible to slight outer force or the like. SOLUTION: A liquid and a gas are introduced into the inside of a nozzle box 1 separately from a liquid flow inlet 2 and a gas flow inlet 3, respectively and the liquid and the gas separately arrive a fluid supply plate 6 and the liquid passes through a liquid supply hole 6a and the gas passes through a gas supply hole 6b and the liquid and the gas are supplied so as to be approximately even in the plane of the upper face of a straitening vane 4. The liquid and the gas are mixed in the straitening vane 4 and the gas-liquid mixed fluid is evenly sprayed in the whole area of the inner face of the straitening vane 4 so as to evenly and moderately radiate the gas-liquid mixed fluid to an object to be washed with a certain surface area without applying high pressure.

36. 发明专利

JP2002299330A PLASMA PROCESSING AND APPARATUS AND SEMICONDUCTOR MANUFACTURING APPARATUS 失效
公开(公告)号：JP2002299330A
公开(公告)日：2002-10-11
申请号：JP2001094273
申请日：2001-03-28
申请人： OMI TADAHIRO , TOKYO ELECTRON LTD
发明人： OMI TADAHIRO , HIRAYAMA MASAKI , SUGAWA SHIGETOSHI , GOTO TETSUYA
IPC分类号： H05H1/46 , B01J19/08 , C23C16/511 , C30B25/10 , H01J37/32 , H01L21/302 , H01L21/3065 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To optimize the cooling efficiency of a shower plate and the excitation efficiency of microwaves in a microwave plasma processing apparatus, using a radial slotted line antenna. SOLUTION: A radial slotted antenna has a radiation surface in close contact with a cover plate closely contacted to a shower plate, and a cooler is provided on the slotted antenna for absorbing heat flux flowing in the thickness direction in the outer wall of a process chamber. The cover plate forms part of the outer wall of the chamber.

37. 发明专利

JP2002299314A PLASMA PROCESSING APPARATUS 失效
公开(公告)号：JP2002299314A
公开(公告)日：2002-10-11
申请号：JP2001094271
申请日：2001-03-28
申请人： OMI TADAHIRO , TOKYO ELECTRON LTD
发明人： OMI TADAHIRO , HIRAYAMA MASAKI , SUGAWA SHIGETOSHI , GOTO TETSUYA
IPC分类号： H05H1/46 , H01J37/32 , H01L21/302 , H01L21/3065 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To stabilize plasma generation in a microwave plasma processing apparatus which suppressing generation of reflected waves at the connection part between a microwave supply waveguide and a microwave antenna, for improving charging efficiency, and suppressing discharging. SOLUTION: A tapered surface for reducing impedance variation and a member which has an intermediate dielectric constant are provided between the microwave supply waveguide and the microwave antenna.

38. 发明专利

JP2002299304A WET PROCESSING APPARATUS 审中-公开
公开(公告)号：JP2002299304A
公开(公告)日：2002-10-11
申请号：JP2002036061
申请日：2002-02-13
申请人： OMI TADAHIRO , ALPS ELECTRIC CO LTD , KAIJO KK
发明人： MIMORI KENICHI , OMI TADAHIRO , KASAMA YASUHIKO
IPC分类号： B08B3/12 , H01L21/304 , H01L21/306
摘要： PROBLEM TO BE SOLVED: To provide a water-saving type wet processing apparatus, which can reduce the consumption of wet processing liquid to 1/10 times as much as conventionally and obtain higher cleanness than conventionally. SOLUTION: This wet processing apparatus is provided with a wet-processing body 15, equipped with an introduction-side passage 5 for introducing the processing liquid 3 on one side and a discharge-side passage 6 for discharging the processing liquid 3, after wet-processing on the other and further equipped with a vibration guide member 2, which guides the processing liquid 3 introduced from the introduction-side passage 5 to a body 1 to be processed and performs the wet processing of the body 1 to be processed, while giving vibration between the introduction-side passage 5 and discharge-side passage 6, and is further provided with a position adjusting member 4, which ensures a specific gap between the vibration guide member 2 and the body 1 to be processed and holds the processing liquid 3 in the gap; and the vibration guide member 2 is equipped with a vibrator 7 on the opposite external surface of the vibration guide member 2 from the side of the body to be processed and liquid 1, which transmits the vibration from the vibrator 7 to the external surface of the vibration guide member on the side of the body to be processed is provided in the vibration guide member 2.

39. 发明专利

JP2002294460A PLASMA PROCESSING APPARATUS WITH MICROWAVE AND PLASMA PROCESS CONTROLLING METHOD 失效
公开(公告)号：JP2002294460A
公开(公告)日：2002-10-09
申请号：JP2001094278
申请日：2001-03-28
申请人： OMI TADAHIRO , TOKYO ELECTRON LTD
发明人： OMI TADAHIRO , HIRAYAMA MASAKI , SUGAWA SHIGETOSHI , GOTO TETSUYA
IPC分类号： H05H1/00 , B01J19/08 , C23C16/511 , C23C16/52 , H01J37/32 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/31 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To control density of plasma to be constant by monitoring a frequency of microwave and the reflected wave. SOLUTION: This apparatus introduces a microwave into a process chamber 12 through a wave guide 26 to generate plasma. A reflection monitor 40 and an electric power monitor 42 monitor the electric power of the wave reflected by the plasma generated in the process chamber 12. An incidence monitor 36 and a frequency monitor 48 monitor the frequency of the microwave generated by a magnetron 24. A control device controls the electric power supplied to the magnetron 24 on the basis of the monitored electric power and frequency of the reflected wave.

40. 发明专利

JP2002261091A SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD 失效
公开(公告)号：JP2002261091A
公开(公告)日：2002-09-13
申请号：JP2001094245
申请日：2001-03-28
申请人： OMI TADAHIRO
发明人： OMI TADAHIRO , SUGAWA SHIGETOSHI , HIRAYAMA MASAKI , SHIRAI YASUYUKI
IPC分类号： H01L21/28 , H01L21/306 , H01L21/314 , H01L21/316 , H01L21/318 , H01L21/336 , H01L21/76 , H01L21/8234 , H01L21/8239 , H01L21/8246 , H01L21/8247 , H01L27/00 , H01L27/088 , H01L27/105 , H01L27/115 , H01L27/12 , H01L29/49 , H01L29/51 , H01L29/78 , H01L29/786 , H01L29/788 , H01L29/792
摘要： PROBLEM TO BE SOLVED: To provide a method for forming a silicon oxide film, a silicon nitride film, a silicon oxynitriding film and a high dielectric constant oxide film, which do not depend on a silicon plane direction, are uniform and high quality, and are excellent in electrical properties, on a silicon surface at about 500 deg. or lower. SOLUTION: In a film formation method of a semiconductor device including a plurality of silicon-based transistors or capacitors, hydrogen exists in at least a part of the silicon surface previously. After the hydrogen is removed by exposing the silicon surface to plasma by a first inert gas, plasma by a second inert gas and a mixture gas of one or a plurality of kinds of gaseous molecules is produced. As a result, a silicon compound layer containing at least a part of elements constituting the gaseous molecules is formed in a surface of the silicon base.

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