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31. 发明专利

JPH10222839A CURVED SURFACE BODY MEMORY DEVICE AND ITS PRODUCTION 失效
公开(公告)号：JPH10222839A
公开(公告)日：1998-08-21
申请号：JP2240697
申请日：1997-02-05
申请人： HITACHI LTD
发明人： CHIBA KATSUYOSHI , FUTAMOTO MASAAKI , SHIROISHI YOSHIHIRO , CHOKAI MINORU
IPC分类号： G11B5/66 , G11B5/72 , G11B5/733 , G11B5/74 , G11B5/85 , G11B11/10 , G11B11/105
摘要： PROBLEM TO BE SOLVED: To stably obtain thin films which are uniform in the particles of constituting particulates and are good in their orientability by applying the energy by surface energy control on the surfaces of spheres or ellipsoids or spheres having hollow parts or ellipsoids, more preferably the curved surfaces of cubes to excise the surface, thereby forming recording films or electronic circuit elements recordable at least as memories. SOLUTION: A rotary supporting table 2 consisting of a material, such as ceramics or tungsten coated with 'Teflon (R)' is arranged within a vacuum box 1 of a sputtering device. Sphere-spin-memories 330 are mounted on the supporting table 2 and surge driving bodies 4a, 4b are installed onto these sphere-spin-memories 300. These surge driving bodies 4a, 4b are toric. The surge energy to be impressed in the plasma is variable to 2 to 37w according to purposes and is of course the double superposed waves to be imposed on sound waves and ultrasonic waves. A target for a nonmagnetic ground surface layer or intermediate layer, a magnetic material target and a target for a protective film are installed as the evaporation source in the device.

32. 发明专利

JPH0982609A PATTERN FORMATION METHOD AND PATTERN FORMATION APPARATUS 失效
公开(公告)号：JPH0982609A
公开(公告)日：1997-03-28
申请号：JP23673195
申请日：1995-09-14
申请人： HITACHI LTD
发明人： CHOKAI MINORU , TERASAWA TSUNEO
IPC分类号： G03F7/20 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To transfer a fine mask pattern exceeding a conventional resolution limit to a sample substrate. SOLUTION: A first grating pattern 26 is registered on a reticle 13 provided with a mask pattern 14, and pattern modulation is conducted. At the same time, while a wafer substrate 3 having a demodulation thin film formed on a photoresist is provided below the reticle 13, a second grating pattern is formed on the demodulation thin film by light irradiation of total internal reflection and pattern demodulation is conducted. Thereby the mask pattern 14 is transferred to the photoresist. Demodulation is controlled to be conducted synchronously with modulation by means of a projection/exposure apparatus. This pattern formation method makes it possible to exceed a spatial frequency limit of a pattern which can be apparently transferred.

33. 发明专利

JPH097171A CURVED SURFACE BODY MEMORY AND ITS MANUFACTURE 失效
公开(公告)号：JPH097171A
公开(公告)日：1997-01-10
申请号：JP14997895
申请日：1995-06-16
申请人： HITACHI LTD
发明人： CHIBA KATSUYOSHI , FUTAMOTO MASAAKI , SHIROISHI YOSHIHIRO , HOSOE YUZURU , ISHIKAWA AKIRA , CHOKAI MINORU
IPC分类号： G11B5/74 , G11B5/64 , G11B5/65 , G11B5/66 , G11B5/738 , G11B5/84 , G11B11/10 , G11B11/105 , G11B20/12 , G11B25/00 , G11B33/02
摘要： PURPOSE: To provide a spherical spin memory(SSM), an SSM device and an SSM system capable of high density recording by applying the energy by wave motion energy control of superimposition of a sound wave and an electromagnetic wave to the SSM system having a stereoscopic curved surface. CONSTITUTION: In the SSM system 1500, both of a sphere SSM300 and an inductive rotary drive body 600 are fixed by a connecting shaft 700 to be rotated through a bearing 800. Further, the rotary drive body is driven by a control circuit system 400 of an electromagnetic inductive body 600', and similarly, a control device part 420 of a head 200 is adjusted while synchronizing with the control circuit system 400. Thus, the SSM that the head floats stably even when a gap between the head 200 and a spherical memory 333 is reduced to 0.014μm or below, and a high servo signal is obtained even in high track density is manufactured and provided. Thus, the SSM system and SSM operating even in high recording density of 2Gb -32Gb /in are obtained.

34. 发明专利

JPH07326573A PATTERN FORMING METHOD AND PROJECTION ALIGNER 失效
公开(公告)号：JPH07326573A
公开(公告)日：1995-12-12
申请号：JP7351095
申请日：1995-03-30
申请人： HITACHI LTD
发明人： TERASAWA TSUNEO , OKAZAKI SHINJI , CHOKAI MINORU
IPC分类号： G03F7/20 , H01L21/027
摘要： PURPOSE:To transfer a fine pattern exceeding a conventional resolution boundary by a method wherein a position of a Fourier variable pattern is shifted in a direction vertical to an optical axis by a specific amount to modulate space frequency and further lights having a specific frequency are emitted to an interference fringe to demodulate in a sensitive film. CONSTITUTION:A reticle 3 is placed on a stage 6 controlled by reticle position controlling means 19 and a center of the reticle 3 and an optical axis of a projection lens 7 are precisely positioned so that they can conform to each other. A wafer 8 is placed on a Z stage 13 movable in an optical axis direction of the projection lens 7 or in a Z direction and on a XY stage 14 movable in a XY direction. As the Z stage 13 and XY stage 14 are driven by respective driving means 16, 17 corresponding to control commands from a main control system 18, they can move to a desired exposure position for a base 15 of a projection aligner.

35. 发明专利

JPH0772567A OPTICAL INFORMATION RECORDING MEDIUM AND OPTICAL INFORMATION RECORDING AND REPRODUCING DEVICE 失效
公开(公告)号：JPH0772567A
公开(公告)日：1995-03-17
申请号：JP22006093
申请日：1993-09-03
申请人： HITACHI LTD
发明人： SUGIYAMA HISATAKA , CHOKAI MINORU , NAKAMURA SHIGERU , WAKABAYASHI KOICHIRO , ARIMOTO AKIRA , IMAZEKI SHUJI , KOBAYASHI SETSUO
IPC分类号： G03C1/00 , G03C1/73 , G11B7/24 , G11B7/244
摘要： PURPOSE:To effectively micronize a light spot and to record and reproduce information at a recording density below optical resolution by arranging a photochromic layer using a specified photochromic material on the light irradiation side of a recording and reproducing layer. CONSTITUTION:A disk 6 of the optical information recording medium and optical information recording and reproducing device consists of a replica substrate 6a, a photochromic layer 6b, a recording and reproducing layer 6c, a reflecting layer 6d and a protective layer 6e. The photochromic layer 6b of the photochromic material has a light transmissivity increased with increase in incident power or incident energy density and saturated is arranged close to the recording and reproducing layer 6c, and a light spot with the incident power density increased at the center and decreased at the periphery is passed through the photochromic layer 6b to irradiate the recording and reproducing layer 6c. Accordingly, the light spot is effectively micronized, and information is recorded and reproduced at a recording density below the optical resolution.

36. 发明专利

JPH0669189A FILM FORMATION METHOD 失效
公开(公告)号：JPH0669189A
公开(公告)日：1994-03-11
申请号：JP21999692
申请日：1992-08-19
申请人： HITACHI LTD
发明人： MIURA NAOKO , YOSHIMURA TOSHIYUKI , CHOKAI MINORU , SHIRAISHI HIROSHI , OKAZAKI SHINJI
IPC分类号： C08G8/12 , G03F7/16 , H01L21/027 , H01L21/312 , H01L21/368
摘要： PURPOSE:To provide a method of forming an equal and highly oriented film by controlling the rate of the ingredients of film manufacture substances, in the film formation method by LB method. CONSTITUTION:An LB film is formed by controlling the rate between the paracresol resin 12 of cresol novolak resin 11 and the metacresol novolak 13, 14, and 15, the film formation substances. Hereby, it becomes possible to form an equal and highly oriented LB film which is applicable to higher resolution resist as compared with the case where existing cresol novolak resin is used. Moreover, a microfine pattern can be made by making use of this film.

37. 发明专利

JPH1197334A PATTERN FORMING METHOD 失效
公开(公告)号：JPH1197334A
公开(公告)日：1999-04-09
申请号：JP25959097
申请日：1997-09-25
申请人： HITACHI LTD
发明人： CHOKAI MINORU
IPC分类号： G03F7/20 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To reduce a period for forming fine element patterns, by a method wherein, via a projection optical system having a modulation step of changing space frequency and a demodulation step of reproducing mask patterns associated with this modulation amount, an optical exposure and an electron beam exposure for projecting in resist and forming patterns are used. SOLUTION: In a final titanium sapphire laser 1 and a second titanium sapphire laser 20, just after the second titanium sapphire laser 20 manufactures demodulating lattice stripes 26 by a main control system 11, the pattern exposing first titanium sapphire laser 1 is set so as to pass the lattice stripes 26. The second lattice stripes 26 are moved in a demodulating thin film 28 by changing continuously a phase of lights in a mirror 24. A first lattice 17 and the second lattice stripes 26 are synchronously scanned while patterns are exposed, so that fine patterns of 0.15 μm, for example, are exposed to a resist 27, and continuously fine patterns of 0.1 μm, for example, are drawn by electron beam drawing.

38. 发明专利

JPH10275757A PATTERN FORMATION METHOD AND DEVICE 失效
公开(公告)号：JPH10275757A
公开(公告)日：1998-10-13
申请号：JP7958197
申请日：1997-03-31
申请人： HITACHI LTD
发明人： CHOKAI MINORU
IPC分类号： G03F7/20 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To prevent, for example, an optical element and a coating film from being damaged by applying a beam where the pulse width of an excimer laser is longer than a specific value. SOLUTION: A beam where the pulse width of an excimer laser 1 is longer than 100 ns is applied. The oscillation life of the laser itself is extended. For example, the spiker/sustainer vibrating method is known as the method for extending pulses, and a pulse width exceeding 1 μs is achieved. More specifically, the pulse width can be drastically extended without using any additional optical system such as an optical system for splitting an optical path, thus extending the pulse width at least by 100 times as compared with a normal pulse width of 10 ns. Therefore, an energy density per unit time becomes much smaller, namely 1/10 or less, thus preventing an optical element and a coating film from being damaged. The electron density of discharge can be controlled by electron beams for extending life or the plasma cathode ionization method can be utilized.

39. 发明专利

JPH08190801A ELECTROCHEMICAL LIGHT EMITTING DEVICE 失效
公开(公告)号：JPH08190801A
公开(公告)日：1996-07-23
申请号：JP306395
申请日：1995-01-12
申请人： HITACHI LTD
发明人： CHOKAI MINORU
IPC分类号： H05B33/26 , F21K2/08 , H05B33/12
摘要： PURPOSE: To provide a new light emitting device by arranging a light emitting medium containing an electrochemical light emitting substance between two confronting electrodes set with a predetermined electrode spacing so as to generate electrochemical light emission efficiently. CONSTITUTION: An inside electrode wiring film 6 whose both ends are composed of an electrode portion 6a and a terminal portion 6b and an outside electrode wiring film 7 composed of partially opened doughnut-like electrode 7a and a terminal portion 7b are formed concentrically on the insulation layer 2 of a board 1. The wiring films 6, 7 are covered by an insulation film 8 so as to expose the electrode portions and the terminal portions thereof, a lid member 18 is arranged on the insulation film 8 via an O ring 16 arranged outside the electrode portion 7a, and the liquid 17 of an electrochemical light emitting substance, such as pyrene or the like is filled in the inside space thereof. Since the shortest time for ions generated at one side electrode to reach the confronting electrode is expressed by t=d /(D: diffusion constant), an electrochemical light emitting efficiency is improved by setting an electrode spacing (d) so that the (t) is less than the mean lifetime of the ions.

40. 发明专利

JPH07220991A PATTERN FORMING METHOD 失效
公开(公告)号：JPH07220991A
公开(公告)日：1995-08-18
申请号：JP813794
申请日：1994-01-28
申请人： HITACHI LTD
发明人： CHOKAI MINORU
IPC分类号： G03F7/004 , G03F7/20 , H01L21/027
摘要： PURPOSE:To obtain a high resolution without influence of an uneven part of a base by simultaneously exposing by using a light having a second wavelength with an optical mask generated in a thin film by selective exposure using a light having a first wavelength. CONSTITUTION:N,N'-di-(p-methylphenyl)-theta,theta'-dipyridylium-dimeth ylaniline complex, novolak resin and quinone diazide compound are dissolved in solvent, this solution is filtered by a filter, and resist solution is prepared. A silicon wafer is coated with this resist solution, and dried to manufacture a resist thin film. Then, the wafer is irradiated at a mask pattern with a single pulse of an exposure amount of 50mJ/cm via a mask having a fine pattern by using a contraction projection exposure unit having an excimer laser which has an exposure wavelength of 248nm. Thereafter, after the entire wafer is simultaneously irradiated with 100mJ/cm with an exposure wavelength of 436nm, it is developed with tetramethyl ammonium aqueous solution to remove an exposed part with the light of 436nm.

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