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31. 发明申请

US20130119388A1 ORGANIC LIGHT-EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：有机发光显示装置及其制造方法
公开(公告)号：US20130119388A1
公开(公告)日：2013-05-16
申请号：US13469933
申请日：2012-05-11
申请人： June-Woo Lee , Jae-Beom Choi , Kwan-Wook Jung , Seong-Hyun Jin , Kwang-Hae Kim , Ga-Young Kim
发明人： June-Woo Lee , Jae-Beom Choi , Kwan-Wook Jung , Seong-Hyun Jin , Kwang-Hae Kim , Ga-Young Kim
IPC分类号： H01L51/50 , H01L51/40
CPC分类号： H01L27/1255 , H01L27/124 , H01L27/3248 , H01L27/3258 , H01L27/3265 , H01L27/3276 , H01L29/4908 , H01L51/5215 , H01L51/5265 , H01L2227/323
摘要： An OLED device includes: a TFT including an active layer, gate, source and drain electrodes, a first insulating layer between the active layer and the gate electrode, and a second insulating layer between the source and drain electrodes, a pixel electrode on the first and second insulating layers, connected to one of the source and drain electrodes, a capacitor including a first electrode on the same layer as the active layer, a second electrode on the same layer as the gate electrode, and a third electrode formed of the same material as the pixel electrode, a third insulating layer between the second insulating layer and the pixel electrode and between the second and third electrodes, a fourth insulating layer covering the source, drain and third electrodes, exposing a portion of the pixel electrode, an organic light-emitting layer on the pixel electrode, and a counter electrode on the organic light-emitting layer.
摘要翻译： OLED器件包括：包括有源层，栅极，源极和漏极的TFT，在有源层和栅电极之间的第一绝缘层，以及在源极和漏极之间的第二绝缘层，第一以及与源电极和漏极之一连接的第二绝缘层，包括与有源层相同的层上的第一电极的电容器，与栅电极相同的层上的第二电极和由其形成的第三电极作为像素电极的材料，第二绝缘层和像素电极之间以及第二和第三电极之间的第三绝缘层，覆盖源极，漏极和第三电极的第四绝缘层，暴露像素电极的一部分，有机物像素电极上的发光层和有机发光层上的对电极。

32. 发明授权

US08901577B2 Organic light-emitting display device and method of manufacturing the same 有权
标题翻译：有机发光显示装置及其制造方法
公开(公告)号：US08901577B2
公开(公告)日：2014-12-02
申请号：US13418512
申请日：2012-03-13
申请人： Kwang-Hae Kim , Jae-Beom Choi , Kwan-Wook Jung , June-Woo Lee
发明人： Kwang-Hae Kim , Jae-Beom Choi , Kwan-Wook Jung , June-Woo Lee
IPC分类号： H01L29/18 , H01L21/00 , H01L27/12 , H01L27/32
CPC分类号： H01L27/124 , H01L27/3262 , H01L2924/0002 , H01L2924/00
摘要： An organic light-emitting display device includes a gate electrode, a source electrode, and a drain electrode on a substrate, a gate interconnection line connected to the gate electrode, a source and drain interconnection line connected to the source and drain electrodes, a first test pad electrically connected to the source and drain interconnection line, and a second test pad electrically connected to the gate interconnection line. The second test pad is at a same level as the first test pad, and the gate electrode is on a different layer than the source and drain electrodes.
摘要翻译：有机发光显示装置包括在基板上的栅电极，源电极和漏极，连接到栅电极的栅极互连线，连接到源极和漏极的源极和漏极互连线，第一电连接到源极和漏极互连线的测试焊盘以及电连接到栅极互连线的第二测试焊盘。第二测试焊盘处于与第一测试焊盘相同的水平面上，并且栅电极在与源电极和漏电极不同的层上。

33. 发明申请

US20080006827A1 Making thin film transistors on display panels 审中-公开
标题翻译：在显示面板上制作薄膜晶体管
公开(公告)号：US20080006827A1
公开(公告)日：2008-01-10
申请号：US11788501
申请日：2007-04-20
申请人： Seung-Hwan Shim , Kwan-Wook Jung , Young-Jin Chang , Jae-Beom Choi , Yoon-Seok Choi
发明人： Seung-Hwan Shim , Kwan-Wook Jung , Young-Jin Chang , Jae-Beom Choi , Yoon-Seok Choi
IPC分类号： H01L31/036 , H01L21/84
CPC分类号： H01L27/1288 , H01L27/1214 , H01L27/3262 , H01L29/66765 , H01L29/78612 , H01L29/78678 , H01L29/78696 , H01L51/56
摘要： A thin film transistor for a display device includes a substrate, a gate electrode formed on the substrate, a gate insulating layer formed on the gate electrode, a polycrystalline semiconductor formed on the gate insulating layer and overlapping the gate electrode, a source electrode partially overlapping the polycrystalline semiconductor, and a drain electrode partially overlapping the polycrystalline semiconductor. The polycrystalline semiconductor includes a plurality of first polycrystalline semiconductors that are doped with conductive impurities and a plurality of second polycrystalline semiconductors that are not doped with conductive impurities, and the first polycrystalline semiconductors are disposed between and connected in series with adjacent ones of the second polycrystalline semiconductors.
摘要翻译：一种用于显示装置的薄膜晶体管，包括基板，形成在基板上的栅电极，形成在栅电极上的栅极绝缘层，形成在栅极绝缘层上并与栅电极重叠的多晶半导体，源电极部分重叠多晶半导体和与多晶半导体部分重叠的漏电极。多晶半导体包括掺杂有导电杂质的多个第一多晶半导体和不掺杂有导电杂质的多个第二多晶半导体，并且第一多晶半导体布置在相邻的第二多晶半导体之间并与其连接半导体。

34. 发明授权

US07824952B2 Display apparatus and method of manufacturing thereof 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US07824952B2
公开(公告)日：2010-11-02
申请号：US11689619
申请日：2007-03-22
申请人： Jae-Beom Choi , Young-Jin Chang , Kwan-Wook Jung , Seung-Hwan Shim
发明人： Jae-Beom Choi , Young-Jin Chang , Kwan-Wook Jung , Seung-Hwan Shim
IPC分类号： H01L51/40
CPC分类号： H01L29/04 , H01L27/1229 , H01L27/1288 , H01L27/3262
摘要： A display apparatus, such as an organic light emitting diode (“OLED”) display, is driven by thin film transistors (“TFTs”), including a driving TFT and a switching TFT, and a pixel electrode. The display apparatus includes an amorphous silicon layer for the switching TFT and a microcrystalline silicon or polycrystalline silicon layer for the driving TFT. The amorphous silicon layer and the microcrystalline silicon layer are separated by an insulating layer. The apparatus provides product reliability and high image quality. A method of manufacturing the apparatus is characterized by reducing processing steps, and using a special mask which is a half tone mask or a slit mask adapted to forming a source electrode and a drain electrode of the switching TFT or the driving TFT and a semiconductor layer during a photolithographic process.
摘要翻译：诸如有机发光二极管（“OLED”）显示器的显示装置由包括驱动TFT和开关TFT的薄膜晶体管（“TFT”）以及像素电极驱动。显示装置包括用于开关TFT的非晶硅层和用于驱动TFT的微晶硅或多晶硅层。非晶硅层和微晶硅层被绝缘层分开。该设备提供产品可靠性和高图像质量。制造该装置的方法的特征在于减少处理步骤，并且使用作为适于形成开关TFT或驱动TFT的源电极和漏电极的半色调掩模或狭缝掩模的特殊掩模和半导体层在光刻过程中。

35. 发明申请

US20130037818A1 ORGANIC LIGHT-EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：有机发光显示装置及其制造方法
公开(公告)号：US20130037818A1
公开(公告)日：2013-02-14
申请号：US13353372
申请日：2012-01-19
申请人： Hae-yeon LEE , Jin-gon Oh , Jae-Beom Choi , June-Woo Lee
发明人： Hae-yeon LEE , Jin-gon Oh , Jae-Beom Choi , June-Woo Lee
IPC分类号： H01L51/52 , H01L51/56
CPC分类号： H01L27/3258 , H01L27/1288 , H01L27/3246 , H01L27/3248 , H01L27/3265 , H01L27/3276 , H01L2227/323
摘要： An organic light-emitting display device includes a thin film transistor including an active layer, a gate electrode, source/drain electrodes, a first insulating layer between the active layer and the gate electrode, and a second insulating layer over the gate electrode; a pixel electrode on the first insulating layer and the second insulating layer and connected to the source or drain electrode; a first wire on the first insulating layer, of the same material as the gate electrode; a second wire on the second insulating layer to at least partially overlap the first wire and including a lower wiring layer of the same material as the pixel electrode and an upper wiring layer on the lower wiring layer, of the same material as the source/drain electrodes; and third insulating layers between the second insulating layer and the pixel electrode and between the second insulating layer and the second wire.
摘要翻译：有机发光显示装置包括薄膜晶体管，其包括有源层，栅电极，源极/漏极，有源层和栅电极之间的第一绝缘层，以及栅极上的第二绝缘层; 在所述第一绝缘层和所述第二绝缘层上的像素电极，并连接到所述源极或漏极; 在第一绝缘层上的与栅电极相同材料的第一布线; 所述第二绝缘层上的第二布线至少部分地与所述第一布线重叠，并且包括与所述像素电极相同的材料的下布线层和所述下布线层上的上布线层，与所述源极/漏极相同的材料电极以及在第二绝缘层和像素电极之间以及第二绝缘层和第二导线之间的第三绝缘层。

36. 发明申请

US20130056710A1 ORGANIC LIGHT-EMITTING DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：有机发光显示装置及其制造方法
公开(公告)号：US20130056710A1
公开(公告)日：2013-03-07
申请号：US13426733
申请日：2012-03-22
申请人： Jae-Hwan Oh , Young-Jin Chang , Seong-Hyun Jin , Se-Hun Park , June-Woo Lee , Kwang-Hae Kim , Jong-Hyun Choi , Kwan-Kyu Lee , Won-Kyu Lee , Jae-Beom Choi
发明人： Jae-Hwan Oh , Young-Jin Chang , Seong-Hyun Jin , Se-Hun Park , June-Woo Lee , Kwang-Hae Kim , Jong-Hyun Choi , Kwan-Kyu Lee , Won-Kyu Lee , Jae-Beom Choi
IPC分类号： H01L27/32 , H01L51/56
CPC分类号： H01L27/1255 , H01L27/3258 , H01L27/3265 , H01L51/5265 , H01L51/5268 , H01L2227/323
摘要： An organic light-emitting display apparatus includes a first insulating layer, a second insulating layer on the first insulating layer and including an unevenness portion, a third insulating layer on the second insulating layer, a pixel electrode on the third insulating layer, an opposite electrode facing the pixel electrode, and an organic emission layer between the pixel electrode and the opposite electrode; a thin film transistor including an active layer, a gate electrode, and source/drain electrodes connected to the active layer, the first insulating layer being between the active layer and the gate electrode and the second insulating layer being between the gate electrode, and the source/drain electrodes; and a capacitor including a lower electrode on a same layer as the gate electrode, a dielectric layer of a same material as the third insulating layer, and an upper electrode on a same layer as the pixel electrode.
摘要翻译：一种有机发光显示装置，包括第一绝缘层，第一绝缘层上的第二绝缘层，包括凹凸部，第二绝缘层上的第三绝缘层，第三绝缘层上的像素电极，对置电极面对像素电极，以及像素电极和对置电极之间的有机发光层; 薄膜晶体管，包括有源层，栅电极和连接到有源层的源极/漏极，所述第一绝缘层位于所述有源层和所述栅电极之间，所述第二绝缘层位于所述栅电极与所述栅电极之间，源极/漏极; 以及电容器，其包括与栅电极相同的层上的下电极，与第三绝缘层相同的材料的电介质层，以及与像素电极同层的上电极。

37. 发明授权

US08704237B2 Organic light-emitting display device and method of manufacturing the same 有权
标题翻译：有机发光显示装置及其制造方法
公开(公告)号：US08704237B2
公开(公告)日：2014-04-22
申请号：US13353372
申请日：2012-01-19
申请人： Hae-yeon Lee , Jin-Gon Oh , Jae-Beom Choi , June-Woo Lee
发明人： Hae-yeon Lee , Jin-Gon Oh , Jae-Beom Choi , June-Woo Lee
IPC分类号： H01L27/14 , H01L29/04 , H01L29/15 , H01L31/036
CPC分类号： H01L27/3258 , H01L27/1288 , H01L27/3246 , H01L27/3248 , H01L27/3265 , H01L27/3276 , H01L2227/323
摘要： An organic light-emitting display device includes a thin film transistor including an active layer, a gate electrode, source/drain electrodes, a first insulating layer between the active layer and the gate electrode, and a second insulating layer over the gate electrode; a pixel electrode on the first insulating layer and the second insulating layer and connected to the source or drain electrode; a first wire on the first insulating layer, of the same material as the gate electrode; a second wire on the second insulating layer to at least partially overlap the first wire and including a lower wiring layer of the same material as the pixel electrode and an upper wiring layer on the lower wiring layer, of the same material as the source/drain electrodes; and third insulating layers between the second insulating layer and the pixel electrode and between the second insulating layer and the second wire.
摘要翻译：有机发光显示装置包括薄膜晶体管，其包括有源层，栅电极，源极/漏极，有源层和栅电极之间的第一绝缘层，以及栅极上的第二绝缘层; 在所述第一绝缘层和所述第二绝缘层上的像素电极，并连接到所述源极或漏极; 在第一绝缘层上的与栅电极相同材料的第一布线; 所述第二绝缘层上的第二布线至少部分地与所述第一布线重叠，并且包括与所述像素电极相同的材料的下布线层和所述下布线层上的上布线层，与所述源极/漏极相同的材料电极以及在第二绝缘层和像素电极之间以及第二绝缘层和第二导线之间的第三绝缘层。

38. 发明授权

US09159866B2 Photo sensor, method of manufacturing photo sensor, and display apparatus 有权
标题翻译：光传感器，光传感器的制造方法以及显示装置
公开(公告)号：US09159866B2
公开(公告)日：2015-10-13
申请号：US13916790
申请日：2013-06-13
申请人： Won-Kyu Lee , Jae-Hwan Oh , Seong-Hyun Jin , Young-Jin Chang , Jae-Beom Choi
发明人： Won-Kyu Lee , Jae-Hwan Oh , Seong-Hyun Jin , Young-Jin Chang , Jae-Beom Choi
IPC分类号： H01L21/00 , H01L31/18 , H01L31/105 , G02F1/133 , H01L27/32
CPC分类号： H01L31/1872 , G02F1/13318 , H01L27/3269 , H01L31/1055 , Y02E10/50 , Y02P70/521
摘要： A photo sensor, a method of manufacturing the photo sensor, and a display apparatus, the photo sensor including a substrate; a light receiving unit on the substrate, the light receiving unit including an amorphous semiconductor material; a first adjacent unit and a second adjacent unit formed as one body with the light receiving unit, the first adjacent unit and the second adjacent unit being separated from each other by the light receiving unit; a first photo sensor electrode electrically connected to the first adjacent unit; and a second photo sensor electrode electrically connected to the second adjacent unit, wherein at least one of the first adjacent unit and the second adjacent unit includes a crystalline semiconductor material.
摘要翻译：光传感器，光传感器的制造方法以及显示装置，所述光传感器包括基板; 在所述基板上的受光单元，所述受光单元包括非晶半导体材料; 第一相邻单元和第二相邻单元，其与光接收单元形成为一体，第一相邻单元和第二相邻单元由光接收单元彼此分离; 电连接到第一相邻单元的第一光电传感器电极; 和与第二相邻单元电连接的第二光电传感器电极，其中第一相邻单元和第二相邻单元中的至少一个包括晶体半导体材料。

39. 发明授权

US08901550B2 Organic light-emitting display apparatus and method of manufacturing the same 有权
标题翻译：有机发光显示装置及其制造方法
公开(公告)号：US08901550B2
公开(公告)日：2014-12-02
申请号：US13938412
申请日：2013-07-10
申请人： Se-Hun Park , Won-Kyu Lee , Yeoung-Jin Chang , Jae-Hwan Oh , Seong-Hyun Jin , Jae-Beom Choi
发明人： Se-Hun Park , Won-Kyu Lee , Yeoung-Jin Chang , Jae-Hwan Oh , Seong-Hyun Jin , Jae-Beom Choi
IPC分类号： H01L35/24 , H01L51/00 , H01L51/52 , H01L51/56
CPC分类号： H01L51/5203 , H01L27/3276 , H01L51/5253 , H01L51/56
摘要： An organic light-emitting display apparatus includes an active layer of a thin film transistor (TFT), a gate electrode including a transparent conductive material or a metal that on the active layer, a first insulating layer on the substrate, source and drain electrodes electrically connected to the active layer, a second insulating layer between the gate electrode and the source and drain electrodes, a first conductive layer of a transparent conductive material on the first insulating layer, a second conductive layer on the first conductive layer, the second conductive layer being a metal, a third conductive layer on the second conductive layer, the third conductive layer being made of a same material as the source and drain electrodes, and being connected to the first conductive layer; and a protection layer that includes a transparent conductive oxide, the protection layer being on the third conductive layer.
摘要翻译：有机发光显示装置包括薄膜晶体管（TFT）的有源层，包括透明导电材料的栅电极或在有源层上的金属，在基板上的第一绝缘层，电极和漏电极连接到有源层，在栅极和源极和漏极之间的第二绝缘层，在第一绝缘层上的透明导电材料的第一导电层，第一导电层上的第二导电层，第二导电层作为第二导电层上的金属，第三导电层，第三导电层由与源电极和漏电极相同的材料制成，并与第一导电层连接; 以及保护层，其包括透明导电氧化物，所述保护层位于所述第三导电层上。

40. 发明授权

US08742413B2 Photosensor and method of manufacturing the same 有权
标题翻译：光电传感器及其制造方法
公开(公告)号：US08742413B2
公开(公告)日：2014-06-03
申请号：US13239627
申请日：2011-09-22
申请人： Jae-Hwan Oh , Won-Kyu Lee , Seong-Hyun Jin , Young-Jin Chang , Jae-Beom Choi
发明人： Jae-Hwan Oh , Won-Kyu Lee , Seong-Hyun Jin , Young-Jin Chang , Jae-Beom Choi
IPC分类号： H01L31/0264 , H01L31/20
CPC分类号： H01L31/1804 , H01L31/105 , H01L31/1055 , Y02E10/547 , Y02P70/521
摘要： In a photosensor and a method of manufacturing the same, the photosensor comprises: an intrinsic silicon layer formed on a substrate; a P-type doped region formed in a same plane with the intrinsic silicon layer; and an oxide semiconductor layer formed on or under the intrinsic silicon layer, and overlapping an entire region of the intrinsic silicon layer.
摘要翻译：在光传感器及其制造方法中，光电传感器包括：形成在基板上的本征硅层; 与本征硅层在同一平面内形成的P型掺杂区域; 以及形成在本征硅层之上或之下的氧化物半导体层，并且与本征硅层的整个区域重叠。

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