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31. 发明授权

US06576566B2 Apparatus and method for forming thin film at low temperature and high deposition rate 有权
公开(公告)号：US06576566B2
公开(公告)日：2003-06-10
申请号：US09866869
申请日：2001-05-30
申请人： Kazuhiko Hashimoto , Tomonori Mukaigawa , Ryuichi Kubo , Hiroyuki Kishihara , Tatsuro Usuki , Minoru Noda , Masanori Okuyama
发明人： Kazuhiko Hashimoto , Tomonori Mukaigawa , Ryuichi Kubo , Hiroyuki Kishihara , Tatsuro Usuki , Minoru Noda , Masanori Okuyama
IPC分类号： H01L2131
CPC分类号： H01L21/02197 , C23C14/0021 , C23C14/048 , C23C14/088 , C23C14/28 , H01L21/02266 , H01L21/31691
摘要： A thin film formation apparatus includes a vacuum chamber, a target holding mount held movably in the vacuum chamber, a target containing a film material, an ArF excimer laser for emitting high energy radiation to a surface of the target, an optical system for concentrating the radiation from the excimer laser to the surface of the target, a substrate holding mount holding the substrate, an oxidizing gas inlet for supplying an oxidizing gas into the vacuum chamber for oxidizing a substance deposited on the substrate, a heater placed inside the substrate holding mount for heating the substrate in the vacuum chamber, and a light for irradiating the substrate held on the substrate holding mount with light rays.

32. 发明授权

US5606186A Semiconductor integrated circuit including opposed substrates of different semiconductor materials and method of manufacturing the semiconductor integrated circuit 失效
标题翻译：包括不同半导体材料的相对基板和半导体集成电路制造方法的半导体集成电路
公开(公告)号：US5606186A
公开(公告)日：1997-02-25
申请号：US512916
申请日：1995-08-09
申请人： Minoru Noda
发明人： Minoru Noda
IPC分类号： H01L27/092 , H01L21/8238 , H01L21/8258 , H01L27/00 , H01L27/06 , H01L29/78 , H01L27/08
CPC分类号： H01L21/8258 , H01L27/0688
摘要： An insulating film having a through hole aligned with an electrode on a first semiconductor element is formed on a first semiconductor substrate and a metal is disposed in the through hole. A second semiconductor element on a second semiconductor substrate is placed on the insulating film in such a way that an electrode of the second semiconductor element contacts the metal. Thus, a plurality of transistors having different performance characteristics and functions can be easily disposed adjacent to each other for improved integration.
摘要翻译：在第一半导体衬底上形成具有与第一半导体元件上的电极对准的通孔的绝缘膜，并且金属设置在通孔中。将第二半导体衬底上的第二半导体元件放置在绝缘膜上，使得第二半导体元件的电极与金属接触。因此，具有不同性能特性和功能的多个晶体管可以容易地彼此相邻设置，以提高集成度。

33. 发明授权

US5468685A Method for producing a semiconductor integrated circuit 失效
标题翻译：半导体集成电路的制造方法
公开(公告)号：US5468685A
公开(公告)日：1995-11-21
申请号：US329908
申请日：1994-10-27
申请人： Shinji Orisaka , Minoru Noda
发明人： Shinji Orisaka , Minoru Noda
IPC分类号： H01L21/3105 , H01L21/312 , H01L21/314 , H01L21/768 , H01L23/522 , H01L23/532 , H01L21/311
CPC分类号： H01L23/53295 , H01L21/3105 , H01L21/312 , H01L21/314 , H01L21/7682 , H01L21/76829 , H01L21/76834 , H01L23/5222 , H01L23/5329 , H01L2221/1047 , H01L2924/0002
摘要： A semiconductor integrated circuit includes an interlayer insulating film in which vacancies are evenly scattered. In this structure, the effective dielectric constant of the insulating film is reduced so that capacitance between upper and lower wirings and capacitance between adjacent wirings are reduced, resulting in a high speed semiconductor device. In production, a main material of the insulating film mixed with particles of a different material is applied to a surface of a wafer where the insulating film is to be formed. Then, the main material is solidified and the particles are selectively etched with an etchant that etches the particles but does not etch the main material, resulting in an insulating film in which vacancies are uniformly distributed. In this way, an insulating film having a low effective dielectric constant is formed in a simple process, resulting in a high speed semiconductor device having a small capacitance between wirings.
摘要翻译：半导体集成电路包括空位均匀分散的层间绝缘膜。在这种结构中，绝缘膜的有效介电常数降低，使得上下布线之间的电容和相邻布线之间的电容减小，导致高速半导体器件。在生产中，将绝缘膜与不同材料的颗粒混合的主要材料被施加到要形成绝缘膜的晶片的表面上。然后，主要材料被固化，并且用蚀刻颗粒的蚀刻剂选择性地蚀刻颗粒，但不会蚀刻主要材料，导致绝缘膜中空隙均匀分布。以这种方式，以简单的工艺形成具有低有效介电常数的绝缘膜，从而导致在布线之间具有小电容的高速半导体器件。

34. 发明授权

US5153683A Field effect transistor 失效
标题翻译：场效应晶体管
公开(公告)号：US5153683A
公开(公告)日：1992-10-06
申请号：US673339
申请日：1991-03-22
申请人： Minoru Noda
发明人： Minoru Noda
IPC分类号： H01L29/812 , H01L21/285 , H01L21/336 , H01L21/338 , H01L29/08 , H01L29/423
CPC分类号： H01L29/66878 , H01L21/28581 , H01L21/28587 , H01L29/0891 , H01L29/42316 , H01L29/66659
摘要： A field effect transistor having an asymmetric gate includes high dopant concentration source and drain regions. The drain region is shallower and of lower dopant concentration than the source region. The drain is spaced from the gate electrode. Therefore, an ideal FET having a reduced short channel effect and having a lower source resistance and high current drivability (gm) is obtained. When the drain region is produced by ion implantation through a film and the source region is produced by the implantation directly into the substrate, only the drain region is separated from the gate. When the insulating film on the source region is separated from the insulating film on the drain region, the insulating film on the source region is reliably selectively removed, whereby high controllability is obtained.
摘要翻译：具有不对称栅极的场效应晶体管包括高掺杂浓度源极和漏极区域。漏极区域比源区域更浅，掺杂浓度低。漏极与栅电极间隔开。因此，获得了具有降低的短沟道效应并且具有较低源极电阻和高电流驱动能力（gm）的理想FET。当通过离子注入通过膜产生漏极区域并且通过直接注入到衬底中产生源极区域时，只有漏极区域与栅极分离。当源极区域上的绝缘膜与漏极区域上的绝缘膜分离时，源极区域上的绝缘膜被可靠地选择性地去除，从而获得高可控性。

35. 发明授权

US5036017A Method of making asymmetrical field effect transistor 失效
标题翻译：制作不对称场效应晶体管的方法
公开(公告)号：US5036017A
公开(公告)日：1991-07-30
申请号：US441898
申请日：1989-11-27
申请人： Minoru Noda
发明人： Minoru Noda
IPC分类号： H01L29/812 , H01L21/336 , H01L21/337 , H01L21/338 , H01L29/08 , H01L29/10 , H01L29/423 , H01L29/78
CPC分类号： H01L29/66522 , H01L29/0843 , H01L29/0847 , H01L29/0891 , H01L29/1066 , H01L29/42316 , H01L29/42372 , H01L29/66878 , H01L29/66924 , H01L29/7838
摘要： A method of making a field effect transistor includes forming an active layer in a semiconductor substrate, forming a gate material on a portion of the surface as an ion implantation mask, implanting dopant ions to form a source region, depositing a first mask over the source region and a portion of the gate material, and removing the unmasked gate material to define a gate electrode. A second mask is deposited adjacent the gate electrode opposite the source region, and dopant impurities are implanted to form a drain region using the mask. The source and drain regions are asymmetrically doped and the gate electrode is asymmetrically disposed relative to the source and drain regions in the self-aligning process.
摘要翻译：制造场效应晶体管的方法包括在半导体衬底中形成有源层，在表面的一部分上形成栅极材料作为离子注入掩模，注入掺杂离子以形成源区，在源上沉积第一掩模区域和栅极材料的一部分，以及去除未掩模的栅极材料以限定栅电极。沉积与栅极电极相邻的第二掩模，并且使用掩模注入掺杂剂杂质以形成漏区。源极和漏极区域是非对称掺杂的，并且栅极电极在自对准过程中相对于源极和漏极区域非对称地设置。

36. 发明授权

US4993962A Closed type connecting block 失效
标题翻译：闭式连接块
公开(公告)号：US4993962A
公开(公告)日：1991-02-19
申请号：US566966
申请日：1990-08-13
申请人： Minoru Noda , Junji Nomura , Shinji Sakamoto
发明人： Minoru Noda , Junji Nomura , Shinji Sakamoto
IPC分类号： H01R13/52 , H01R13/447 , H01R13/629 , H01R13/641 , H01R13/73 , H04M1/02
CPC分类号： H01R13/447 , H04M1/0293 , H01R13/629 , H01R13/641 , H01R2201/16
摘要： A closed type connecting block including a shutter which close and open an opening formed on a housing and which is biased toward a position to close the opening. The shutter and the housing are formed with notches which sealingly receive a core inserted into the connecting block therebetween. The connecting block also includes a pivotable jack mounted therein to enable users to easily insert and remove a plug connected to the cord from communication equipment.
摘要翻译：一种封闭式连接块，包括闭合并打开形成在壳体上并且朝向关闭开口的位置偏压的开口的快门。挡板和壳体形成有密封地容纳插入其间的连接块中的芯的凹口。连接块还包括安装在其中的可枢转的千斤顶，以使用户能够从通信设备中容易地插入和移除连接到绳索的插头。

37. 发明授权

US4946401A Connecting block for telephone 失效
标题翻译：电话连接块
公开(公告)号：US4946401A
公开(公告)日：1990-08-07
申请号：US437610
申请日：1989-11-17
申请人： Akira Hori , Minoru Noda , Shigenobu Ohara , Yuzo Mochizuki , Junji Nomura
发明人： Akira Hori , Minoru Noda , Shigenobu Ohara , Yuzo Mochizuki , Junji Nomura
IPC分类号： H01R13/502 , H04M1/02
CPC分类号： H04M1/0293 , H01R13/502 , H01R24/62
摘要： A connecting block for electrically connecting a plug of a telephone set to a telephone line includes a base plate having a terminal for connection to the telephone line, a jack unit including a jack having an opening for inserting the plug thereinto, the jack unit having parallel side walls across the jack opening, a pair of parallel retaining members extending upwardly from side edges of the base plate for removably retaining the jack unit therebetween, and a cover for enclosing the retaining members, the jack unit and the terminal, the cover having a window to which the jack opening may be exposed. The arrangement of the jack unit and the retaining members is such that the jack opening may selectively extend parallel to the base plate or perpendicular thereto.
摘要翻译：用于将电话机的插头电连接到电话线的连接块包括具有用于连接到电话线的终端的基板，包括具有用于插入插头的开口的插座的插座单元，所述插座单元具有并联横跨插座开口的侧壁，一对平行的保持构件，其从基板的侧边缘向上延伸，用于可拆卸地将插座单元保持在其间;以及盖，用于封闭保持构件，插座单元和端子，盖具有千斤顶开口可能露出的窗口。插座单元和保持构件的布置使得插座开口可以选择性地平行于基板延伸或者垂直于基板。

38. 发明授权

US4739669A Driving apparatus for industrial robot 失效
标题翻译：工业机器人驱动装置
公开(公告)号：US4739669A
公开(公告)日：1988-04-26
申请号：US809938
申请日：1985-12-17
申请人： Kazutoshi Yokose , Yutaka Makishima , Masatoshi Higake , Toshimi Shioda , Masahide Nagai , Minoru Noda
发明人： Kazutoshi Yokose , Yutaka Makishima , Masatoshi Higake , Toshimi Shioda , Masahide Nagai , Minoru Noda
IPC分类号： F16H25/22 , B23Q5/40 , B25J9/10 , B25J18/02 , B25J19/00 , F16H25/20 , F16H29/02 , F16H29/20
CPC分类号： B25J9/108 , B23Q5/404 , B25J18/025 , F16H25/20 , F16H2025/2081 , F16H25/2204 , Y10T74/18656 , Y10T74/1868
摘要： A driving apparatus for effecting linear movement of an industrial robot comprises a slide member axially slidably disposed within a frame, a ball nut secured to the slide member and a ball screw threaded through the ball nut and rotationally driven relative to the ball nut to effect linear movement of the ball nut along the ball screw accompanied by linear movement of the slide shaft. A bracket is adjustably mounted on the frame for rotatably supporting the shaft of the ball screw. The bracket can be displaced relative to the frame in the transverse direction of the slide member to align the axis of the ball screw with the axis of the slide member during assembly of the apparatus. A thrust bearing is disposed between the shaft of the ball screw and the bracket to absorb radial displacement and strain of the ball screw shaft.
摘要翻译：用于实现工业机器人的线性运动的驱动装置包括轴向可滑动地设置在框架内的滑动构件，固定到滑动构件的滚珠螺母和穿过滚珠螺母的滚珠丝杠，并且相对于滚珠螺母旋转驱动以实现线性滚珠螺母沿着滚珠丝杠的运动伴随着滑动轴的线性运动。支架可调节地安装在框架上，用于可旋转地支撑滚珠丝杠的轴。支架可以在滑动构件的横向方向上相对于框架移位，以在组装装置期间使滚珠丝杠的轴线与滑动构件的轴线对准。推力轴承设置在滚珠丝杠的轴与支架之间，以吸收滚珠丝杠轴的径向位移和应变。

39. 发明授权

US4569624A Linear transfer device for wafery works 失效
标题翻译：用于晶圆工程的线性传输装置
公开(公告)号：US4569624A
公开(公告)日：1986-02-11
申请号：US556292
申请日：1983-11-30
申请人： Minoru Noda , Tsutomu Miyata , Yoshihiro Yamashita , Kenji Ohmura
发明人： Minoru Noda , Tsutomu Miyata , Yoshihiro Yamashita , Kenji Ohmura
IPC分类号： B65G47/90 , H01L21/677 , H01L21/687 , B65H1/00
CPC分类号： H01L21/67781 , H01L21/68707 , Y10S414/138
摘要： A linear transfer device for wafery works comprising: a work supporting means provided each in a work supplying station, one or more working stations and a work discharging station, which supports the works in erect positions in front thereof, the stations being linearly arranged with equal distances; a feeding means for axially feeding the work supporting means; a transfer bar capable of moving horizontally and vertically and holding means provided on the transfer bar which are adapted to face to the stations and have a pair of supporting grooves in order to support the work in an erect position, characterized in that the delivery or reception of the work supported by each work supporting means or each holding means can be made only by the vertical movement of the transfer bar relatively to each station and that the work supporting means can locate at the retreated positions in order to prevent from interfering with the holding means when the transfer bar is in movement.
摘要翻译：一种用于晶片工程的线性传送装置，包括：工件支撑装置，每个工件供应站设置在工作供应站中，一个或多个工作站和工作放电站，其在前面的直立位置支撑工件，工位平行地线性排列距离用于轴向馈送工件支撑装置的进给装置; 能够水平和垂直移动的传送杆和设置在传送杆上的保持装置，该传送杆适于面向站并具有一对支撑槽，以便将工件支撑在直立位置，其特征在于，传送或接收由每个工件支撑装置或每个保持装置支撑的工件只能通过相对于每个工位的转移杆的垂直运动而做，并且工件支撑装置可以位于后退位置，以防止干涉保持意味着转移杆运动时。

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