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31. 发明授权

US6066531A Method for manufacturing semiconductor memory device 失效
标题翻译：制造半导体存储器件的方法
公开(公告)号：US6066531A
公开(公告)日：2000-05-23
申请号：US99520
申请日：1998-06-18
申请人： Yukiharu Akiyama , Takuji Tanigami , Shinichi Sato
发明人： Yukiharu Akiyama , Takuji Tanigami , Shinichi Sato
IPC分类号： H01L21/8247 , H01L27/115 , H01L29/788 , H01L29/792 , H01L21/336
CPC分类号： H01L27/11521
摘要： A method for manufacturing a semiconductor memory device, including the steps of: forming a plurality of stripes comprising a first floating gate material film and a ion implantation protective film, covering one longitudinal side wall of the stripes with a resist pattern; removing a given width of the other side wall of the first floating gate material film by an isotropic etching in use of the resist pattern as a mask; forming an impurity region of low concentration by implanting impurity ions of a second conductivity type into the semiconductor substrate of the first conductivity type in use of the ion implantation protective film as a mask in a tilted direction after removing the resist pattern; and forming asymmetrical impurity regions on both sides of the stripe like first floating gate material film as viewed in the cross section along the direction perpendicular to the longitudinal direction of the stripes. According to the above-mentioned method, without using a side wall spacer, a semiconductor memory device provided with asymmetrical impurity regions having precisely desired forms can be obtained.
摘要翻译：一种制造半导体存储器件的方法，包括以下步骤：形成包括第一浮栅材料膜和离子注入保护膜的多个条，用抗蚀剂图案覆盖条的一个纵向侧壁; 通过使用抗蚀图案作为掩模，通过各向同性蚀刻去除第一浮栅材料膜的另一侧壁的给定宽度; 通过在去除抗蚀剂图案之后，在使用离子注入保护膜作为掩模作为掩模的情况下，将第二导电类型的杂质离子注入到第一导电类型的半导体衬底中，形成低浓度的杂质区; 以及沿着与条纹的纵向方向垂直的方向在横截面中看到的条状的第一浮栅材料膜的两侧上形成非对称杂质区域。根据上述方法，在不使用侧壁间隔物的情况下，可以获得具有精确期望形状的非对称杂质区域的半导体存储器件。

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