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31. 发明授权

US08926789B2 Apparatus for the removal of a fluorinated polymer from a substrate 有权
标题翻译：用于从基材除去氟化聚合物的装置
公开(公告)号：US08926789B2
公开(公告)日：2015-01-06
申请号：US12750612
申请日：2010-03-30
申请人： Hyungsuk Alexander Yoon , John Boyd , Andras Kuthi , Andrew D. Bailey, III
发明人： Hyungsuk Alexander Yoon , John Boyd , Andras Kuthi , Andrew D. Bailey, III
IPC分类号： C23F1/00 , H01L21/306 , C23C16/00 , H01L21/02 , B08B7/00
CPC分类号： H01L21/02087 , B08B7/0035
摘要： An apparatus generating a plasma for removing fluorinated polymer from a substrate is provided. The apparatus includes a powered electrode assembly, which includes a powered electrode, a first dielectric layer, and a first wire mesh disposed between the powered electrode and the first dielectric layer. The apparatus also includes a grounded electrode assembly disposed opposite the powered electrode assembly so as to form a cavity wherein the plasma is generated. The first wire mesh is shielded from the plasma by the first dielectric layer when the plasma is present in the cavity, which has an outlet at one end for providing the plasma to remove the fluorinated polymer.
摘要翻译：提供一种从衬底生成用于除去氟化聚合物的等离子体的装置。所述装置包括电源电极组件，其包括供电电极，第一电介质层和布置在所述电源电极和所述第一电介质层之间的第一电线网。该装置还包括与动力电极组件相对设置的接地电极组件，以便形成其中产生等离子体的空腔。当空腔中存在等离子体时，第一电介质层通过第一电介质层屏蔽第一丝网，其在一端具有出口以提供等离子体以除去氟化聚合物。

32. 发明授权

US07691278B2 Apparatus for the removal of a fluorinated polymer from a substrate and methods therefor 有权
标题翻译：用于从基材除去氟化聚合物的设备及其方法
公开(公告)号：US07691278B2
公开(公告)日：2010-04-06
申请号：US11237477
申请日：2005-09-27
申请人： Hyungsuk Alexander Yoon , John Boyd , Andras Kuthi , Andrew D. Bailey, III
发明人： Hyungsuk Alexander Yoon , John Boyd , Andras Kuthi , Andrew D. Bailey, III
IPC分类号： H01L21/302
CPC分类号： H01L21/02087 , B08B7/0035
摘要： An apparatus generating a plasma for removing fluorinated polymer from a substrate is disclosed. The embodiment includes a powered electrode assembly, including a powered electrode, a first dielectric layer, and a first wire mesh disposed between the powered electrode and the first dielectric layer. The embodiment also includes a grounded electrode assembly disposed opposite the powered electrode assembly so as to form a cavity wherein the plasma is generated, the first wire mesh being shielded from the plasma by the first dielectric layer when the plasma is present in the cavity, the cavity having an outlet at one end for providing the plasma to remove the fluorinated polymer.
摘要翻译：公开了一种从衬底生成用于除去氟化聚合物的等离子体的装置。该实施例包括动力电极组件，其包括供电电极，第一介电层和设置在电源电极和第一介电层之间的第一丝网。该实施例还包括与动力电极组件相对设置的接地电极组件，以便形成其中产生等离子体的空腔，当等离子体存在于空腔中时，第一金属丝网被第一介电层与等离子体屏蔽，空腔在一端具有出口，用于提供等离子体以除去氟化聚合物。

33. 发明授权

US07875554B2 Method for electroless depositing a material on a surface of a wafer 有权
标题翻译：在晶片的表面上无电沉积材料的方法
公开(公告)号：US07875554B2
公开(公告)日：2011-01-25
申请号：US12044537
申请日：2008-03-07
申请人： Yezdi Dordi , John Boyd , William Thie , Bob Maraschin , Fred C. Redeker , Joel M. Cook
发明人： Yezdi Dordi , John Boyd , William Thie , Bob Maraschin , Fred C. Redeker , Joel M. Cook
IPC分类号： H01L21/44
CPC分类号： C23C18/1612 , C23C18/14 , C23C18/161 , C23C18/1619 , C23C18/1651 , C23C18/1667 , C23C18/168 , C23C18/31 , H01L21/288
摘要： Broadly speaking, a method and an apparatus are provided for depositing a material on a semiconductor wafer (“wafer”). More specifically, the method and apparatus provide for selective heating of a surface of the wafer exposed to an electroless plating solution. The selective heating is provided by applying radiant energy to the wafer surface. The selective heating of the wafer surface causes a temperature increase at an interface between the wafer surface and the electroless plating solution. The temperature increase at the interface in turn causes a plating reaction to occur at the wafer surface. Thus, material is deposited on the wafer surface through an electroless plating reaction that is initiated and controlled by varying the temperature of the wafer surface using an appropriately defined radiant energy source.
摘要翻译：概括地说，提供了一种在半导体晶片（“晶片”）上沉积材料的方法和装置。更具体地，该方法和装置提供了暴露于化学镀溶液的晶片的表面的选择性加热。通过向晶片表面施加辐射能来提供选择性加热。晶片表面的选择性加热导致晶片表面和化学镀溶液之间的界面处的温度升高。界面处的温度升高又导致在晶片表面发生电镀反应。因此，通过化学镀反应将材料沉积在晶片表面上，该电镀反应通过使用适当限定的辐射能源改变晶片表面的温度来启动和控制。

34. 发明授权

US07358186B2 Method and apparatus for material deposition in semiconductor fabrication 有权
标题翻译：在半导体制造中材料沉积的方法和装置
公开(公告)号：US07358186B2
公开(公告)日：2008-04-15
申请号：US10735216
申请日：2003-12-12
申请人： Yezdi Dordi , John Boyd , William Thie , Bob Maraschin , Fred C. Redeker , Joel M. Cook
发明人： Yezdi Dordi , John Boyd , William Thie , Bob Maraschin , Fred C. Redeker , Joel M. Cook
IPC分类号： H01L21/44 , B05C5/12
CPC分类号： C23C18/1612 , C23C18/14 , C23C18/161 , C23C18/1619 , C23C18/1651 , C23C18/1667 , C23C18/168 , C23C18/31 , H01L21/288
摘要： Broadly speaking, a method and an apparatus are provided for depositing a material on a semiconductor wafer (“wafer”). More specifically, the method and apparatus provide for selective heating of a surface of the wafer exposed to an electroless plating solution. The selective heating is provided by applying radiant energy to the wafer surface. The selective heating of the wafer surface causes a temperature increase at an interface between the wafer surface and the electroless plating solution. The temperature increase at the interface in turn causes a plating reaction to occur at the wafer surface. Thus, material is deposited on the wafer surface through an electroless plating reaction that is initiated and controlled by varying the temperature of the wafer surface using an appropriately defined radiant energy source.
摘要翻译：概括地说，提供了一种在半导体晶片（“晶片”）上沉积材料的方法和装置。更具体地，该方法和装置提供了暴露于化学镀溶液的晶片的表面的选择性加热。通过向晶片表面施加辐射能来提供选择性加热。晶片表面的选择性加热导致晶片表面和化学镀溶液之间的界面处的温度升高。界面处的温度升高又导致在晶片表面发生电镀反应。因此，通过化学镀反应将材料沉积在晶片表面上，该电镀反应通过使用适当限定的辐射能源改变晶片表面的温度来启动和控制。

35. 发明申请

US20060063470A1 SEMICONDUCTOR WAFER MATERIAL REMOVAL APPARATUS AND METHOD FOR OPERATING THE SAME 失效
标题翻译：半导体滤波材料去除装置及其操作方法
公开(公告)号：US20060063470A1
公开(公告)日：2006-03-23
申请号：US10948510
申请日：2004-09-22
申请人： John Boyd , Fred Redeker , Yezdi Dordi
发明人： John Boyd , Fred Redeker , Yezdi Dordi
IPC分类号： B24B51/00 , B24B1/00
CPC分类号： B24B7/228 , B24B37/013 , B24B49/12
摘要： A system for applying a microtopography to a semiconductor wafer (“wafer”) is provided. The system includes a chuck configured to hold and rotate the wafer. The system also includes a grinding wheel disposed over the chuck in a proximately adjustable manner relative to the wafer to be held by the chuck. The grinding wheel is configured to rotate about a central axis of the grinding wheel, wherein the central axis of the grinding wheel is non-parallel to the central axis of the chuck. The grinding wheel is capable of contacting the wafer and removing material from the wafer at the area of contact. Appropriate application of the grinding wheel to the wafer serves to generate a microtopography across the wafer surface. The resulting microtopography can then be planarized more effectively by conventional chemical mechanical planarization methods.
摘要翻译：提供了一种将微形态学应用于半导体晶片（“晶片”）的系统。该系统包括配置成保持和旋转晶片的卡盘。该系统还包括以相对于由卡盘保持的晶片可接近调节的方式设置在卡盘上方的砂轮。砂轮构造成围绕研磨轮的中心轴线旋转，其中砂轮的中心轴线不平行于卡盘的中心轴线。砂轮能够在接触区域接触晶片并从晶片上去除材料。将砂轮适当地施加到晶片用于在晶片表面上产生微观形貌。然后可以通过常规的化学机械平面化方法更有效地平面化所得到的微观形态。

36. 发明授权

US08419917B2 Electroplating head and method for operating the same 有权
标题翻译：电镀头及其操作方法
公开(公告)号：US08419917B2
公开(公告)日：2013-04-16
申请号：US12482171
申请日：2009-06-10
申请人： Yezdi Dordi , Bob Maraschin , John Boyd , Fred C. Redeker
发明人： Yezdi Dordi , Bob Maraschin , John Boyd , Fred C. Redeker
IPC分类号： C25D5/20 , C25D5/02 , C25D5/00
CPC分类号： C25D5/026 , C25D5/02 , C25D5/06 , C25D17/14
摘要： An electroplating head is disposed above and proximate to an upper surface of a wafer. Cations are transferred from an anode to an electroplating solution within the electroplating head. The electroplating solution flows downward through a porous electrically resistive material at an exit of the electroplating head to be disposed on the upper surface of the wafer. An electric current is established between the anode and the upper surface of the wafer through the electroplating solution. The electric current is uniformly distributed by the porous electrically resistive material present between the anode and the upper surface of the wafer. The electric current causes the cations to be attracted to the upper surface of the wafer.
摘要翻译：电镀头设置在晶片的上表面上方并靠近晶片的上表面。阳离子从阳极转移到电镀头内的电镀溶液中。电镀溶液在电镀头的出口处向下流过多孔电阻材料以设置在晶片的上表面上。通过电镀溶液在晶片的阳极和上表面之间建立电流。通过存在于阳极和晶片上表面之间的多孔电阻材料均匀分布电流。电流导致阳离子被吸引到晶片的上表面。

37. 发明申请

US20080153291A1 Method and Apparatus for Material Deposition 有权
标题翻译：材料沉积方法和装置
公开(公告)号：US20080153291A1
公开(公告)日：2008-06-26
申请号：US12044537
申请日：2008-03-07
申请人： Yezdi Dordi , John Boyd , William Thie , Bob Maraschin , Fred C. Redeker , Joel M. Cook
发明人： Yezdi Dordi , John Boyd , William Thie , Bob Maraschin , Fred C. Redeker , Joel M. Cook
IPC分类号： H01L21/44 , C23C16/00
CPC分类号： C23C18/1612 , C23C18/14 , C23C18/161 , C23C18/1619 , C23C18/1651 , C23C18/1667 , C23C18/168 , C23C18/31 , H01L21/288
摘要： Broadly speaking, a method and an apparatus are provided for depositing a material on a semiconductor wafer (“wafer”). More specifically, the method and apparatus provide for selective heating of a surface of the wafer exposed to an electroless plating solution. The selective heating is provided by applying radiant energy to the wafer surface. The selective heating of the wafer surface causes a temperature increase at an interface between the wafer surface and the electroless plating solution. The temperature increase at the interface in turn causes a plating reaction to occur at the wafer surface. Thus, material is deposited on the wafer surface through an electroless plating reaction that is initiated and controlled by varying the temperature of the wafer surface using an appropriately defined radiant energy source.
摘要翻译：概括地说，提供了一种在半导体晶片（“晶片”）上沉积材料的方法和装置。更具体地，该方法和装置提供了暴露于化学镀溶液的晶片的表面的选择性加热。通过向晶片表面施加辐射能来提供选择性加热。晶片表面的选择性加热导致晶片表面和化学镀溶液之间的界面处的温度升高。界面处的温度升高又导致在晶片表面发生电镀反应。因此，通过化学镀反应将材料沉积在晶片表面上，该电镀反应通过使用适当限定的辐射能源改变晶片表面的温度来启动和控制。

38. 发明申请

US20070292615A1 Processes and systems for engineering a silicon-type surface for selective metal deposition to form a metal silicide 有权
标题翻译：用于工程化硅型表面以进行选择性金属沉积以形成金属硅化物的工艺和系统
公开(公告)号：US20070292615A1
公开(公告)日：2007-12-20
申请号：US11513446
申请日：2006-08-30
申请人： Yezdi Dordi , John Boyd , Tiruchirapalli Arunagiri , Johan Vertommen , Fritz C. Redeker , William Thie , Arthur M. Howald
发明人： Yezdi Dordi , John Boyd , Tiruchirapalli Arunagiri , Johan Vertommen , Fritz C. Redeker , William Thie , Arthur M. Howald
IPC分类号： B05D3/00 , B05D1/18 , B29C71/04 , C23C16/00
CPC分类号： C23C18/1651 , C23C18/1893 , H01L21/0206 , H01L21/02063 , H01L21/02068 , H01L21/02074 , H01L21/28518 , H01L21/288 , H01L21/32115 , H01L21/32135 , H01L21/32136 , H01L21/67161 , H01L21/67207 , H01L21/76814 , H01L21/7684 , H01L21/76843 , H01L21/76846 , H01L21/76849 , H01L21/76862 , Y02P70/605
摘要： The embodiments fill the need to enhance electro-migration performance, provide lower metal resistivity, and improve silicon-to-metal interfacial adhesion for copper interconnects by providing improved processes and systems that produce a silicon-to-metal interface. An exemplary method of preparing a substrate surface of a substrate to selectively deposit a layer of a metal on a silicon or polysilicon surface of the substrate to form a metal silicide in an integrated system is provided. The method includes removing organic contaminants from the substrate surface in the integrated system, and reducing the silicon or polysilicon surface in the integrated system after removing organic contaminants to convert silicon oxide on the silicon or polysilicon surface to silicon, wherein after reducing the silicon or polysilicon surface, the substrate is transferred and processed in controlled environment to prevent the formation of silicon oxide, the silicon or polysilicon surface is reduced to increase the selectivity of the metal on the silicon surface. The method further includes selectively depositing the layer of the metal on the silicon or polysilicon surface of substrate in the integrated system after reducing the silicon or polysilicon surface. An exemplary system to practice the exemplary method described above is also provided.
摘要翻译：这些实施方案通过提供产生硅 - 金属界面的改进的工艺和系统来满足增强电迁移性能，提供较低金属电阻率以及改进铜互连的硅 - 金属界面粘附的需要。提供了制备衬底的衬底表面以在衬底的硅或多晶硅表面上选择性地沉积金属层以在集成系统中形成金属硅化物的示例性方法。该方法包括从集成系统中的衬底表面去除有机污染物，以及在去除有机污染物之后减少集成系统中的硅或多晶硅表面，以将硅或多晶硅表面上的氧化硅转化为硅，其中在还原硅或多晶硅之后表面，在受控环境中转移和处理衬底以防止形成氧化硅，减少硅或多晶硅表面以增加金属在硅表面上的选择性。该方法还包括在减少硅或多晶硅表面之后，在集成系统中的衬底的硅或多晶硅表面上选择性地沉积金属层。还提供了用于实践上述示例性方法的示例性系统。

39. 发明授权

US07048608B2 Semiconductor wafer material removal apparatus and method for operating the same 失效
标题翻译：半导体晶片材料去除装置及其操作方法
公开(公告)号：US07048608B2
公开(公告)日：2006-05-23
申请号：US10948510
申请日：2004-09-22
申请人： John Boyd , Fred C. Redeker , Yezdi Dordi
发明人： John Boyd , Fred C. Redeker , Yezdi Dordi
IPC分类号： B24B49/00 , B24B7/22
CPC分类号： B24B7/228 , B24B37/013 , B24B49/12
摘要： A system for applying a microtopography to a semiconductor wafer (“wafer”) is provided. The system includes a chuck configured to hold and rotate the wafer. The system also includes a grinding wheel disposed over the chuck in a proximately adjustable manner relative to the wafer to be held by the chuck. The grinding wheel is configured to rotate about a central axis of the grinding wheel, wherein the central axis of the grinding wheel is non-parallel to the central axis of the chuck. The grinding wheel is capable of contacting the wafer and removing material from the wafer at the area of contact. Appropriate application of the grinding wheel to the wafer serves to generate a microtopography across the wafer surface. The resulting microtopography can then be planarized more effectively by conventional chemical mechanical planarization methods.
摘要翻译：提供了一种将微形态学应用于半导体晶片（“晶片”）的系统。该系统包括配置成保持和旋转晶片的卡盘。该系统还包括以相对于由卡盘保持的晶片可接近调节的方式设置在卡盘上方的砂轮。砂轮构造成围绕研磨轮的中心轴线旋转，其中砂轮的中心轴线不平行于卡盘的中心轴线。砂轮能够在接触区域接触晶片并从晶片上去除材料。将砂轮适当地施加到晶片用于在晶片表面上产生微观形貌。然后可以通过常规的化学机械平面化方法更有效地平面化所得到的微观形态。

40. 发明授权

US08747960B2 Processes and systems for engineering a silicon-type surface for selective metal deposition to form a metal silicide 有权
标题翻译：用于工程化硅型表面以进行选择性金属沉积以形成金属硅化物的工艺和系统
公开(公告)号：US08747960B2
公开(公告)日：2014-06-10
申请号：US11513446
申请日：2006-08-30
申请人： Yezdi Dordi , John Boyd , Tiruchirapalli Arunagiri , Johan Vertommen , Fritz C. Redeker , William Thie , Arthur M. Howald
发明人： Yezdi Dordi , John Boyd , Tiruchirapalli Arunagiri , Johan Vertommen , Fritz C. Redeker , William Thie , Arthur M. Howald
IPC分类号： C23C14/02 , H05H1/00
CPC分类号： C23C18/1651 , C23C18/1893 , H01L21/0206 , H01L21/02063 , H01L21/02068 , H01L21/02074 , H01L21/28518 , H01L21/288 , H01L21/32115 , H01L21/32135 , H01L21/32136 , H01L21/67161 , H01L21/67207 , H01L21/76814 , H01L21/7684 , H01L21/76843 , H01L21/76846 , H01L21/76849 , H01L21/76862 , Y02P70/605
摘要： The embodiments fill the need to enhance electro-migration performance, provide lower metal resistivity, and improve silicon-to-metal interfacial adhesion for copper interconnects by providing improved processes and systems that produce a silicon-to-metal interface. An exemplary method of preparing a substrate surface of a substrate to selectively deposit a layer of a metal on a silicon or polysilicon surface of the substrate to form a metal silicide in an integrated system is provided. The method includes removing organic contaminants from the substrate surface in the integrated system, and reducing the silicon or polysilicon surface in the integrated system after removing organic contaminants to convert silicon oxide on the silicon or polysilicon surface to silicon, wherein after reducing the silicon or polysilicon surface, the substrate is transferred and processed in controlled environment to prevent the formation of silicon oxide, the silicon or polysilicon surface is reduced to increase the selectivity of the metal on the silicon surface. The method further includes selectively depositing the layer of the metal on the silicon or polysilicon surface of substrate in the integrated system after reducing the silicon or polysilicon surface. An exemplary system to practice the exemplary method described above is also provided.
摘要翻译：这些实施方案通过提供产生硅 - 金属界面的改进的工艺和系统来满足增强电迁移性能，提供较低金属电阻率以及改进铜互连的硅 - 金属界面粘附的需要。提供了制备衬底的衬底表面以在衬底的硅或多晶硅表面上选择性地沉积金属层以在集成系统中形成金属硅化物的示例性方法。该方法包括从集成系统中的衬底表面去除有机污染物，以及在去除有机污染物之后减少集成系统中的硅或多晶硅表面，以将硅或多晶硅表面上的氧化硅转化为硅，其中在还原硅或多晶硅之后表面，在受控环境中转移和处理衬底以防止形成氧化硅，减少硅或多晶硅表面以增加金属在硅表面上的选择性。该方法还包括在减少硅或多晶硅表面之后，在集成系统中的衬底的硅或多晶硅表面上选择性地沉积金属层。还提供了用于实践上述示例性方法的示例性系统。

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