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31. 发明授权

US09550669B2 Vertical pressure sensitive structure 有权
标题翻译：垂直压敏结构
公开(公告)号：US09550669B2
公开(公告)日：2017-01-24
申请号：US13368370
申请日：2012-02-08
申请人： Thoralf Kautzsch
发明人： Thoralf Kautzsch
IPC分类号： G01L9/00 , G01L9/16 , H01S4/00 , H01L21/336 , H01L21/311 , B81C1/00 , H04R19/00 , H04R31/00
CPC分类号： B81C1/00158 , B81B2201/0257 , B81B2201/0264 , B81B2203/053 , B81C2201/014 , H04R19/005 , H04R31/00
摘要： Embodiments related to pressure sensitive structures are described and depicted.
摘要翻译：描述和描绘与压敏结构相关的实施例。

32. 发明授权

US08994127B2 Method of fabricating isolating semiconductor structures using a layout of trenches and openings 有权
标题翻译：使用沟槽和开口的布局制造隔离半导体结构的方法
公开(公告)号：US08994127B2
公开(公告)日：2015-03-31
申请号：US13304334
申请日：2011-11-24
申请人： Thoralf Kautzsch , Boris Binder , Torsten Helm , Stefan Kolb , Marc Probst , Uwe Rudolph
发明人： Thoralf Kautzsch , Boris Binder , Torsten Helm , Stefan Kolb , Marc Probst , Uwe Rudolph
IPC分类号： H01L29/84 , B81C1/00
CPC分类号： B81C1/00523 , B81B2201/0264 , B81B2203/0127 , B81C1/00158 , B81C1/0038
摘要： Embodiments related to semiconductor manufacturing and semiconductor devices with semiconductor structure are described and depicted.
摘要翻译：描述和描述了与半导体制造相关的实施例和具有半导体结构的半导体器件。

33. 发明申请

US20130285187A1 PHOTO CELL DEVICES AND METHODS FOR SPECTROMETRIC APPLICATIONS 有权
标题翻译：照片细胞装置和方法用于光谱应用
公开(公告)号：US20130285187A1
公开(公告)日：2013-10-31
申请号：US13459808
申请日：2012-04-30
申请人： Thoralf Kautzsch
发明人： Thoralf Kautzsch
IPC分类号： H01L27/146 , H01L31/18
CPC分类号： H01L27/1446 , H01L31/02162 , H01L31/02327 , H01L31/103
摘要： Embodiments relate to photo cell devices. In an embodiment, a photo cell device includes an array of transmission layers having different optical thicknesses and with photo diodes underneath. The transmission layers can include two different materials, such as a nitride and an oxide, that cover each diode with a different proportional area density in a damascene-like manner. Embodiments provide advantages over conventional devices, including that they can be integrated into a standard CMOS process and therefore simpler and less expensive to produce.
摘要翻译：实施例涉及光电池器件。在一个实施例中，光电池器件包括具有不同光学厚度的透射层阵列和在其下方的光电二极管。透射层可以包括两种不同的材料，例如氮化物和氧化物，其以类似大马士革的方式覆盖具有不同比例面积密度的每个二极管。实施例提供了优于常规设备的优点，包括它们可以集成到标准CMOS工艺中，因此制造更简单且更便宜。

34. 发明授权

US08518732B2 Method of providing a semiconductor structure with forming a sacrificial structure 有权
标题翻译：提供形成牺牲结构的半导体结构的方法
公开(公告)号：US08518732B2
公开(公告)日：2013-08-27
申请号：US12976433
申请日：2010-12-22
申请人： Thoralf Kautzsch , Stefan Kolb , Boris Binder , Bernd Foeste , Marco Mueller
发明人： Thoralf Kautzsch , Stefan Kolb , Boris Binder , Bernd Foeste , Marco Mueller
IPC分类号： H01L21/00 , H01L21/311
CPC分类号： B81B3/0021 , B81C1/00158 , G01L9/0045 , G01L19/0636 , H01L29/84 , H04R19/005 , H04R19/04 , H04R31/00
摘要： A method for providing a semiconductor structure includes forming a sacrificial structure by etching a plurality of trenches from a first main surface of a substrate. The method further includes covering the plurality of trenches at the first main surface with a cover material to define cavities within the substrate, removing a part of the substrate from a second main surface opposite to the first main surface to a depth at which the plurality of trenches are present, and etching away the sacrificial structure from the second main surface of the substrate.
摘要翻译：提供半导体结构的方法包括通过从衬底的第一主表面蚀刻多个沟槽来形成牺牲结构。该方法还包括用第一主表面覆盖多个沟槽，以覆盖衬底，以在衬底内限定空腔，从与第一主表面相反的第二主表面移除基底的一部分，存在沟槽，并且从衬底的第二主表面蚀刻掉牺牲结构。

35. 发明申请

US20130162330A1 PHOTO CELL DEVICES FOR PHASE-SENSITIVE DETECTION OF LIGHT SIGNALS 有权
标题翻译：用于敏感信号检测的照相元件
公开(公告)号：US20130162330A1
公开(公告)日：2013-06-27
申请号：US13332926
申请日：2011-12-21
申请人： Thoralf Kautzsch
发明人： Thoralf Kautzsch
IPC分类号： H03K3/01 , H01L31/02
CPC分类号： H01L31/18 , G01S7/4861 , H01L31/02024 , H01L31/03529 , H01L31/103 , H01L31/112 , Y02E10/50
摘要： Embodiments relate to photo cell devices. In one embodiment, a trench-based photo cells provides very fast capture of photo-generated charge carriers, particularly when compared with conventional approaches, as the trenches of the photo cells create depleted regions deep within the bulk of the substrate that avoid the time-consuming diffusion of carriers.
摘要翻译：实施例涉及光电池器件。在一个实施例中，基于沟槽的光电池提供对光生电荷载流子的非常快速的捕获，特别是当与常规方法相比时，由于光电池的沟槽在衬底的大部分内部产生了深层区域，从而避免了时间 - 消耗载体的扩散。

36. 发明授权

US08471346B2 Semiconductor device including a cavity 有权
标题翻译：包括腔的半导体器件
公开(公告)号：US08471346B2
公开(公告)日：2013-06-25
申请号：US12394836
申请日：2009-02-27
申请人： Thoralf Kautzsch , Markus Rochel
发明人： Thoralf Kautzsch , Markus Rochel
IPC分类号： G01L7/08
CPC分类号： G01L9/0098 , G01L9/0052 , G01L9/0073
摘要： A semiconductor device includes a substrate including a cavity and a first material layer over at least a portion of sidewalls of the cavity. The semiconductor device includes an oxide layer over the substrate and at least a portion of the sidewalls of the cavity such that the oxide layer lifts off a top portion of the first material layer toward a center of the cavity.
摘要翻译：半导体器件包括在空腔的侧壁的至少一部分上方的包括空腔和第一材料层的衬底。半导体器件包括在衬底上的氧化物层和空腔的侧壁的至少一部分，使得氧化物层朝向空腔的中心提升第一材料层的顶部。

37. 发明申请

US20130062502A1 PHOTODETECTOR AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：光电及其制造方法
公开(公告)号：US20130062502A1
公开(公告)日：2013-03-14
申请号：US13537452
申请日：2012-06-29
申请人： Thoralf Kautzsch
发明人： Thoralf Kautzsch
IPC分类号： H01L31/0224 , G01J1/44 , H01L31/18
CPC分类号： H01L31/022408 , G01J3/50 , H01L31/062 , H01L31/102 , H01L31/18 , Y02E10/50
摘要： A photodetector includes a substrate and an insulating arrangement formed in the substrate. The insulating arrangement electrically insulates a confined region of the substrate. The confined region is configured to generate free charge carriers in response to an irradiation. The photodetector further includes a read-out electrode arrangement configured to provide a photocurrent formed by at least a portion of the free charge carriers that are generated in response to the irradiation. The photodetector also includes a biasing electrode arrangement that is electrically insulated against the confined region by means of the insulating arrangement. The biasing electrode arrangement is configured to cause an influence on a spatial charge carrier distribution within the confined region so that fewer of the free charge carriers recombine at boundaries of the confined region compared to an unbiased state.
摘要翻译：光电检测器包括基板和形成在基板中的绝缘布置。绝缘布置使基板的受限区域电绝缘。受限区域被配置为响应于照射产生无电荷载流子。光电检测器还包括被配置为提供由响应于照射而产生的至少一部分自由电荷载体形成的光电流的读出电极装置。光电检测器还包括通过绝缘装置与受限区域电绝缘的偏置电极装置。偏置电极装置被配置为对受限区域内的空间电荷载流子分布产生影响，使得与无偏压状态相比，较少的自由电荷载流子在限制区域的边界处复合。

38. 发明授权

US08278727B2 Pressure sensor and method 有权
标题翻译：压力传感器和方法
公开(公告)号：US08278727B2
公开(公告)日：2012-10-02
申请号：US12651623
申请日：2010-01-04
申请人： Thoralf Kautzsch , Marco Müller , Dirk Meinhold , Ben Rosam , Klaus Elian , Stefan Kolb
发明人： Thoralf Kautzsch , Marco Müller , Dirk Meinhold , Ben Rosam , Klaus Elian , Stefan Kolb
IPC分类号： G01L9/00
CPC分类号： B81C1/00071 , B81B2201/0264 , G01L9/0042
摘要： A method for providing a pressure sensor substrate comprises creating a first cavity that extends inside the substrate in a first direction perpendicular to a main surface of the substrate, and that extends inside the substrate, in a second direction perpendicular to the first direction, into a first venting area of the substrate; creating a second cavity that extends in the first direction inside the substrate, that extends in parallel to the first cavity in the second direction, and that does not extend into the first venting area; and opening the first cavity in the first venting area.
摘要翻译：一种用于提供压力传感器基板的方法包括：在垂直于基板的主表面的第一方向上形成在基板内延伸的第一空腔，并且在垂直于第一方向的第二方向上延伸到基板的内部，基板的第一通气区域; 形成第二空腔，该第二空腔沿第一方向在基板内延伸，该第二空腔在第二方向上平行于第一空腔延伸，并且不延伸到第一排气区域; 并打开第一个通风区域的第一个空腔。

39. 发明申请

US20100218613A1 SEMICONDUCTOR DEVICE INCLUDING A CAVITY 有权
标题翻译：包括CAVITY的半导体器件
公开(公告)号：US20100218613A1
公开(公告)日：2010-09-02
申请号：US12394836
申请日：2009-02-27
申请人： Thoralf Kautzsch , Markus Rochel
发明人： Thoralf Kautzsch , Markus Rochel
IPC分类号： G01L9/06 , G01L9/12 , H01L21/02 , H01L21/76
CPC分类号： G01L9/0098 , G01L9/0052 , G01L9/0073
摘要： A semiconductor device includes a substrate including a cavity and a first material layer over at least a portion of sidewalls of the cavity. The semiconductor device includes an oxide layer over the substrate and at least a portion of the sidewalls of the cavity such that the oxide layer lifts off a top portion of the first material layer toward a center of the cavity.
摘要翻译：半导体器件包括在空腔的侧壁的至少一部分上方的包括空腔和第一材料层的衬底。半导体器件包括在衬底上的氧化物层和空腔的侧壁的至少一部分，使得氧化物层朝向空腔的中心提升第一材料层的顶部。

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