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31. 发明授权

US5355330A Capacitive memory having a PN junction writing and tunneling through an insulator of a charge holding electrode 失效
标题翻译：具有PN结写入并穿过电荷保持电极的绝缘体的电容性存储器
公开(公告)号：US5355330A
公开(公告)日：1994-10-11
申请号：US932242
申请日：1992-08-19
申请人： Dai Hisamoto , Shoji Shukuri , Kazuhiko Sagara , Shinichiro Kimura , Shinichi Minami , Eiji Takeda
发明人： Dai Hisamoto , Shoji Shukuri , Kazuhiko Sagara , Shinichiro Kimura , Shinichi Minami , Eiji Takeda
IPC分类号： G11C11/40 , G11C11/401 , H01L27/108 , G11C11/24
CPC分类号： G11C11/401 , G11C11/40 , H01L27/108
摘要： A semiconductor memory device whose data hold condition is not affected due to degradation of transistor characteristics by minimizing leakage charges and the switching transistor size. The semiconductor memory device employs memory cell charge holding electrode that is insulated from the remaining memory cell structure, particularly the switching transistor source drain leakage path. The write element controls the tunneling of charge carriers through such insulator to the charge holding portion or capacitor electrode, for writing data. Particularly, the write element includes a PN junction for various advantages.
摘要翻译：通过使泄漏电荷和开关晶体管尺寸最小化，由于晶体管特性的劣化，其数据保持条件不受影响的半导体存储器件。半导体存储器件采用与剩余存储单元结构绝缘的存储单元电荷保持电极，特别是开关晶体管源漏泄漏路径。写元件控制通过这种绝缘体的电荷载体穿过电荷保持部分或电容器电极，以便写入数据。特别地，写入元件包括用于各种优点的PN结。

32. 发明授权

US5140389A Semiconductor memory device having stacked capacitor cells 失效
标题翻译：具有层叠电容器单元的半导体存储器件
公开(公告)号：US5140389A
公开(公告)日：1992-08-18
申请号：US475148
申请日：1990-02-05
申请人： Shinichiro Kimura , Naotaka Hashimoto , Yoshio Sakai , Tokuo Kure , Yoshifumi Kawamoto , Toru Kaga , Eiji Takeda
发明人： Shinichiro Kimura , Naotaka Hashimoto , Yoshio Sakai , Tokuo Kure , Yoshifumi Kawamoto , Toru Kaga , Eiji Takeda
IPC分类号： H01L27/108
CPC分类号： H01L27/10817
摘要： A semiconductor memory device having STC cells wherein the major portions of active regions consisting of channel-forming portions are inclined at an angle of 45 degrees with respect to word lines and bit lines that meet at right angles with each other, thereby enabling the storage capacitor portions to be arranged very densely and a sufficiently large capacitance to be maintained with very small cell areas. Since the storage capacitor portions are formed even on the bit lines, the bit lines are shielded, so that the capacitance decreases between the bit lines and, hence, the memory array noise decreases. It is also possible to design the charge storage capacitor portion so that a part thereof is in the form of a wall substantially vertical to the substrate in order to increase the capacitance.
摘要翻译：具有STC单元的半导体存储器件，其中由沟道形成部分组成的有源区的主要部分相对于彼此成直角相交的字线和位线以45度的角度倾斜，从而使得存储电容器要非常密集地布置的部分和足够大的电容以保持非常小的电池区域。由于存储电容器部分甚至在位线上形成，所以位线被屏蔽，使得位线之间的电容减小，因此存储器阵列噪声减小。也可以设计电荷存储电容器部分，使得其一部分呈基本上垂直于衬底的壁的形式，以增加电容。

33. 发明授权

US5012310A Semiconductor memory having stacked capacitor 失效
标题翻译：半导体存储器具有层叠电容
公开(公告)号：US5012310A
公开(公告)日：1991-04-30
申请号：US566315
申请日：1990-08-13
申请人： Shinichiro Kimura , Yoshifumi Kawamoto , Toru Kaga , Hideo Sunami
发明人： Shinichiro Kimura , Yoshifumi Kawamoto , Toru Kaga , Hideo Sunami
IPC分类号： H01L27/10 , H01L21/8242 , H01L27/108
CPC分类号： H01L27/10808
摘要： A megabit dynamic random access memory realizing high integration and high reliability is disclosed. The need for an allowance for photomask alignment which is carried out to produce a stacked capacitor memory cell is eliminated. The plate electrode of each memory cell is isolated from the corresponding data line in a memory array by means of an insulating film which is self-alignedly provided around the plate electrode.
摘要翻译：公开了一种实现高集成度和高可靠性的兆比特动态随机存取存储器。消除了对制造堆叠式电容器存储单元进行的光掩模对准的允许的需要。每个存储单元的平板电极通过绝缘膜与存储器阵列中的对应数据线隔离，该绝缘膜自行设置在平板电极周围。

34. 发明授权

US4873203A Method for formation of insulation film on silicon buried in trench 失效
标题翻译：在埋在沟槽中的硅上形成绝缘膜的方法
公开(公告)号：US4873203A
公开(公告)日：1989-10-10
申请号：US221351
申请日：1988-07-19
申请人： Toru Kaga , Shinichiro Kimura , Tokuo Kure , Yoshifumi Kawamoto , Hideo Sunami
发明人： Toru Kaga , Shinichiro Kimura , Tokuo Kure , Yoshifumi Kawamoto , Hideo Sunami
IPC分类号： H01L27/04 , H01L21/316 , H01L21/32 , H01L21/334 , H01L21/763 , H01L21/822 , H01L21/8242 , H01L27/10 , H01L27/108
CPC分类号： H01L29/66181 , H01L21/32 , H01L21/763
摘要： An insulation film on silicon buried in a trench is prepared by forming a field oxide film by using a first Si.sub.3 N.sub.4 mask formed on a silicon substrate, forming a second Si.sub.3 N.sub.4 mask for formation of a trench, forming a trench in the silicon substrate by using the second Si.sub.3 N.sub.4 mask, burying polycrystalline silicon in the trench, removing the second Si.sub.3 N.sub.4 mask while leaving the first Si.sub.3 N.sub.4 mask and oxidizing the surface of the polycrystalline silicon buried in the trench by thermal oxidation. The so-formed insulation film on silicon buried in the trench has a uniform thickness and a high dielectric strength. The surface of the substrate at a part where an active element will be formed in the future is not oxidized.
摘要翻译：通过使用在硅衬底上形成的第一Si 3 N 4掩模形成场氧化膜，形成用于形成沟槽的第二Si 3 N 4掩模，通过使用硅衬底形成硅衬底中的沟槽来制备掩埋在沟槽中的硅上的绝缘膜第二Si 3 N 4掩模，在沟槽中埋入多晶硅，除去第二Si 3 N 4掩模，同时留下第一Si 3 N 4掩模，并通过热氧化氧化掩埋在沟槽中的多晶硅的表面。埋在沟槽中的硅上如此形成的绝缘膜具有均匀的厚度和高介电强度。在将来将形成有源元件的部分处的基板的表面不被氧化。

35. 发明授权

US08334794B2 Input device and keyboard device having illumination function 失效
标题翻译：具有照明功能的输入装置和键盘装置
公开(公告)号：US08334794B2
公开(公告)日：2012-12-18
申请号：US12579903
申请日：2009-10-15
申请人： Kazutoshi Watanabe , Hideaki Nagakubo , Takenobu Kimura , Koichi Yamamoto , Katsuyuki Katayama , Naomi Sato , Naoya Akiyama , Shinichiro Kimura , Masahiro Ishida , Naoki Yamada , Keiji Takagi , Toshinobu Hosaka
发明人： Kazutoshi Watanabe , Hideaki Nagakubo , Takenobu Kimura , Koichi Yamamoto , Katsuyuki Katayama , Naomi Sato , Naoya Akiyama , Shinichiro Kimura , Masahiro Ishida , Naoki Yamada , Keiji Takagi , Toshinobu Hosaka
IPC分类号： H03M11/00
CPC分类号： G06F3/0202 , H01H13/83 , H01H2219/044 , H01H2219/056 , H01H2219/06 , H01H2219/062
摘要： An input device includes a plurality of manipulation portions; an input function portion manipulated by the manipulation portions to perform an input function; a light guiding sheet facing the rear side of the plurality of manipulation portions; and a light source applying light into the light guiding sheet, wherein a rear surface opposite to a front surface of the light guiding sheet facing the manipulation portions is provided with a plurality of concave portions which is depressed to the inside of the light guiding sheet, wherein each concave portion has a circular opening and an inner surface which is a smooth concave curve surface, and wherein light propagated through the inside of the light guiding sheet is reflected by the inner surface toward the inside of the light guiding sheet, and the light is applied from the front surface of the light guiding sheet to the manipulation portions.
摘要翻译：输入装置包括多个操作部分; 由操作部分操纵以输入功能的输入功能部分; 面向所述多个操作部的后侧的导光片; 以及向所述导光片施加光的光源，其中与所述导光片的面对所述操作部的前表面相对的后表面设置有多个凹陷部，所述凹部被压向所述导光片的内部，其特征在于，每个凹部具有圆形开口和内表面，该内表面是光滑的凹曲面，并且其中通过导光片的内部传播的光被内表面朝向导光片的内部反射，并且光从导光片的前表面施加到操作部。

36. 发明授权

US08183635B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08183635B2
公开(公告)日：2012-05-22
申请号：US12756451
申请日：2010-04-08
申请人： Nobuyuki Sugii , Ryuta Tsuchiya , Shinichiro Kimura , Takashi Ishigaki , Yusuke Morita , Hiroyuki Yoshimoto
发明人： Nobuyuki Sugii , Ryuta Tsuchiya , Shinichiro Kimura , Takashi Ishigaki , Yusuke Morita , Hiroyuki Yoshimoto
IPC分类号： H01L21/00
CPC分类号： H01L27/1203 , H01L21/76283
摘要： A technique to be applied to a semiconductor device for achieving low power consumption by improving a shape at a boundary portion of a shallow trench and an SOI layer of an SOI substrate. A position (SOI edge) at which a main surface of a silicon substrate and a line extended along a side surface of an SOI layer are crossed is recessed away from a shallow-trench isolation more than a position (STI edge) at which a line extended along a sidewall of a shallow trench and a line extended along the main surface of the silicon substrate are crossed, and a corner of the silicon substrate at the STI edge has a curved surface.
摘要翻译：通过改善在SOI衬底的浅沟槽和SOI层的边界部分的形状来实现低功耗的半导体器件的技术。硅衬底的主表面和沿着SOI层的侧表面延伸的线交叉的位置（SOI边缘）比浅沟槽隔离更远离位于（STI边缘）的位置（STI边缘），在该位置处沿着浅沟槽的侧壁延伸并且沿着硅衬底的主表面延伸的线交叉，并且在STI边缘处的硅衬底的拐角具有弯曲表面。

37. 发明授权

US07978212B2 Disk label printer 有权
标题翻译：磁盘标签打印机
公开(公告)号：US07978212B2
公开(公告)日：2011-07-12
申请号：US12141587
申请日：2008-06-18
申请人： Hiroyoshi Zama , Takashi Goto , Mitsuo Makino , Shinichi Sagawai , Mitsuaki Yamazaki , Eihin Setsu , Hisashi Hoshino , Tomohiro Osumi , Shinichiro Kimura
发明人： Hiroyoshi Zama , Takashi Goto , Mitsuo Makino , Shinichi Sagawai , Mitsuaki Yamazaki , Eihin Setsu , Hisashi Hoshino , Tomohiro Osumi , Shinichiro Kimura
IPC分类号： B41J2/32
CPC分类号： B41J3/4071
摘要： Disclosed is a disk label printer that includes a slot-in type optical disk driving mechanism and a printing mechanism integrated with each other, has a small size, and smoothly transfers optical disks. The disclosed disk label printer includes: a case that has a slot through which an optical disk is inserted or ejected formed therein; an optical disk driving mechanism that is provided in the case and writes and/or reads signals to and/or from the optical disk mounted to a disk mounting portion; and a printing mechanism that is provided in the case and includes a thermal head which prints a desired image on a label surface of the optical disk. The printing mechanism is provided on a transfer path of the optical disk toward the optical disk driving mechanism between the slot and the optical disk driving mechanism. The thermal head and a platen roller come into pressure contact with each other with the optical disk interposed therebetween on the transfer path, only when the optical disk is transferred during the driving of the printing mechanism. The thermal head and the platen roller are withdrawn from the transfer path so as to be separated from each other, when the optical disk is transferred during operations other than the driving of the printing mechanism.
摘要翻译：公开了一种包括插入式光盘驱动机构和彼此集成的打印机构的盘标签打印机，其尺寸小，并且平滑地传送光盘。所公开的盘标签打印机包括：具有插入或喷射光盘的槽，光盘驱动机构，其设置在所述壳体中，并向从所述盘安装部安装的光盘写入和/或读取信号; 以及设置在壳体中并且包括在光盘的标签表面上打印所需图像的热敏头的打印机构。打印机构设置在光盘的传送路径朝向光盘驱动机构的槽和光盘驱动机构之间。只有当在打印机构的驱动期间传送光盘时，热敏头和压纸辊彼此压力接触，光盘插入在传送路径上。当驱动印刷机构以外的操作期间传送光盘时，热敏头和压纸滚筒从传送路径中取出，以便彼此分开。

38. 发明申请

US20100322013A1 Nonvolatile Semiconductor Memory Device 有权
标题翻译：非易失性半导体存储器件
公开(公告)号：US20100322013A1
公开(公告)日：2010-12-23
申请号：US12873679
申请日：2010-09-01
申请人： Tetsuya Ishimaru , Digh Hisamoto , Kan Yasui , Shinichiro Kimura
发明人： Tetsuya Ishimaru , Digh Hisamoto , Kan Yasui , Shinichiro Kimura
IPC分类号： G11C16/04 , H01L29/792
CPC分类号： G11C16/0466 , H01L21/28282 , H01L29/66833 , H01L29/792
摘要： In a situation where a memory cell includes an ONO film, which comprises a silicon nitride film for charge storage and oxide films positioned above and below the silicon nitride film; a memory gate above the ONO film; a select gate, which is adjacent to a lateral surface of the memory gate via the ONO film; a gate insulator positioned below the select gate; a source region; and a drain region, an erase operation is performed by injecting holes generated by BTBT into the silicon nitride film while applying a positive potential to the source region, applying a negative potential to the memory gate, applying a positive potential to the select gate, and flowing a current from the drain region to the source region, thus improving the characteristics of a nonvolatile semiconductor memory device.
摘要翻译：在存储单元包括ONO膜的情况下，其包括用于电荷存储的氮化硅膜和位于氮化硅膜上方和下方的氧化膜; 在ONO电影上方的记忆门; 选择栅极，其经由ONO膜与存储栅的侧表面相邻; 位于选择门下方的栅极绝缘体; 源区; 和漏极区域，通过将BTBT产生的空穴注入氮化硅膜，同时向源极区域施加正电位，向存储栅极施加负电位，向选择栅极施加正电位，进行擦除操作，以及使电流从漏极区域流向源极区域，从而改善非易失性半导体存储器件的特性。

39. 发明授权

US07847343B2 Semiconductor device and manufacturing method of semiconductor device 有权
标题翻译：半导体器件及半导体器件的制造方法
公开(公告)号：US07847343B2
公开(公告)日：2010-12-07
申请号：US12368538
申请日：2009-02-10
申请人： Digh Hisamoto , Kan Yasui , Shinichiro Kimura , Tetsuya Ishimaru
发明人： Digh Hisamoto , Kan Yasui , Shinichiro Kimura , Tetsuya Ishimaru
IPC分类号： H01L29/792
CPC分类号： H01L27/11568 , G11C16/0433 , H01L21/2815 , H01L21/28273 , H01L21/28282 , H01L21/84 , H01L27/115 , H01L27/11521 , H01L27/1203 , H01L29/66825 , H01L29/66833 , H01L29/792
摘要： Provided is a nonvolatile semiconductor memory device having a split gate structure, wherein a memory gate is formed over a convex shaped substrate and side surfaces of it is used as a channel. The nonvolatile semiconductor memory device according to the present invention is excellent in read current driving power even if a memory cell is scaled down.
摘要翻译：提供了一种具有分割栅极结构的非易失性半导体存储器件，其中存储栅极形成在凸形基板上，并且其侧表面用作沟道。根据本发明的非易失性半导体存储器件即使存储单元按比例缩小也具有优异的读取电流驱动功率。

40. 发明授权

US07751255B2 Semiconductor nonvolatile memory device 有权
标题翻译：半导体非易失性存储器件
公开(公告)号：US07751255B2
公开(公告)日：2010-07-06
申请号：US12233670
申请日：2008-09-19
申请人： Digh Hisamoto , Kan Yasui , Tetsuya Ishimaru , Shinichiro Kimura , Daisuke Okada
发明人： Digh Hisamoto , Kan Yasui , Tetsuya Ishimaru , Shinichiro Kimura , Daisuke Okada
IPC分类号： G11C11/34 , G11C16/04 , G11C16/06
CPC分类号： G11C16/0425 , G11C16/12 , G11C16/14 , G11C16/26 , G11C16/3454 , G11C16/3459
摘要： An operation scheme for operating stably a semiconductor nonvolatile memory device is provided.When hot-hole injection is conducted in the semiconductor nonvolatile memory device of a split gate structure, the hot-hole injection is verified using a crossing point that does not change with time. Thus, an erased state can be verified without being aware of any time-varying changes.Also, programming or programming/erasure is conducted by repeating pulse voltage or multi-step voltage application to a gate section multiple times.
摘要翻译：提供一种稳定运行半导体非易失性存储器件的操作方案。当在分裂栅极结构的半导体非易失性存储器件中进行热空穴注入时，使用不随时间变化的交叉点来验证热孔注入。因此，可以验证擦除状态，而不知道任何时变变化。此外，通过将多次脉冲电压或多级电压施加到栅极部分进行编程或编程/擦除。

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