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31. 发明授权

US06611544B1 Method and apparatus for narrow bandwidth distributed bragg reflector semiconductor lasers 失效
标题翻译：窄带分布式布拉格反射半导体激光器的方法和装置
公开(公告)号：US06611544B1
公开(公告)日：2003-08-26
申请号：US09547172
申请日：2000-04-11
申请人： Wenbin Jiang , Dan Dapkus , Hsing-Chung Lee
发明人： Wenbin Jiang , Dan Dapkus , Hsing-Chung Lee
IPC分类号： H01S5026
CPC分类号： H01S5/18 , H01S5/0267 , H01S5/1085 , H01S5/2027 , H01S5/2215 , H01S5/2231
摘要： Semiconductor lasers having a narrow bandwidth distributed Bragg reflector (DBR). The narrow bandwidth distributed Bragg reflector reflects photons over a narrow wavelength range for amplification within the laser cavity. Photons outside the narrow wavelength range are not reflected back into the laser cavity and are therefore not amplified. The narrow bandwidth distributed Bragg reflector can be formed of semiconductor materials or dielectric materials. The narrow bandwidth distributed Bragg reflector is included as part of folded cavity surface emitting lasers and edge emitting lasers. Photons within the narrow wavelength range of the narrow bandwidth distributed Bragg reflector reflects are of a relatively long wavelength to improve efficiency of communication over fiber optic cables.
摘要翻译：具有窄带宽布拉格反射器（DBR）的半导体激光器。窄带分布布拉格反射器反射在较窄波长范围内的光子，用于激光腔内的放大。窄波长范围外的光子不会反射回激光腔，因此不会被放大。窄带分布布拉格反射器可以由半导体材料或电介质材料形成。窄带分布布拉格反射器作为折叠腔表面发射激光器和边缘发射激光器的一部分而被包括在内。在窄带宽分布布拉格反射镜的窄波长范围内的光子具有相对较长的波长，以提高通过光纤电缆的通信效率。

32. 发明授权

US6121068A Long wavelength light emitting vertical cavity surface emitting laser and method of fabrication 失效
标题翻译：长波长发光垂直腔表面发射激光器及其制造方法
公开(公告)号：US6121068A
公开(公告)日：2000-09-19
申请号：US47954
申请日：1998-03-26
申请人： Jamal Ramdani , Michael S. Lebby , Wenbin Jiang
发明人： Jamal Ramdani , Michael S. Lebby , Wenbin Jiang
IPC分类号： H01S3/02 , H01S5/00 , H01S5/02 , H01S5/183 , H01L21/00
CPC分类号： H01S5/1838 , H01S5/021 , H01S5/0217 , H01S5/18341 , H01S5/18369
摘要： A longwavelength vertical cavity surface emitting laser (VCSEL) for use in optical telecommunications and method of fabrication that includes the fabrication of an active VCSEL structure on a supporting substrate and the fabrication of a highly reflective DBR mirror structure on a silicon substrate. The DBR mirror structure includes alternating layers of a silicon oxide material and a silicon material fabricated utilizing epitaxially growth techniques and/or wafer bonding using SOI wafer fusion technology. During fabrication of the final VCSEL device, the Si/SiO.sub.2 DBR mirror structure is wafer bonded to the active VCSEL structure. The active VCSEL structure supporting substrate is selectively removed, to enable positioning of a second DBR mirror stack. The final VCSEL device characterized by emitting infra-red light.
摘要翻译：用于光通信的长波长垂直腔表面发射激光器（VCSEL）和制造方法，其包括在支撑衬底上制造有源VCSEL结构，以及在硅衬底上制造高反射性DBR镜结构。 DBR镜结构包括使用SOI晶片融合技术利用外延生长技术和/或晶片结合制造的氧化硅材料和硅材料的交替层。在制造最终的VCSEL器件期间，Si / SiO 2 DBR镜结构被晶片结合到有源VCSEL结构。选择性地去除主动VCSEL结构支撑衬底，以便能够定位第二DBR反射镜堆叠。最终的VCSEL器件的特征在于发射红外光。

33. 发明授权

US6115398A Automatic power control of a semiconductor laser array 失效
标题翻译：半导体激光器阵列的自动功率控制
公开(公告)号：US6115398A
公开(公告)日：2000-09-05
申请号：US080178
申请日：1998-05-18
申请人： Wenbin Jiang
发明人： Wenbin Jiang
IPC分类号： H01S5/022 , H01S5/0683 , H01S5/40 , H01S3/00 , H01S3/04 , H01S5/00
CPC分类号： H01S5/0683 , H01S5/4031 , H01S5/02248
摘要： Automatic power control (APC) of a semiconductor laser array is achieved by monitoring the backward emission emitted by a plurality of semiconductor devices which compose the semiconductor laser array. The drive signal to the laser is adjusted based on the detected emissions. A photosensor mounted in a submount, to which the semiconductor laser array is mounted, is positioned to receive a photocurrent from the backward emissions. A sweeping injection current across the laser array provides for the sequential detection of the backward emission and thus provides for automatic power control (APC).
摘要翻译：通过监视由构成半导体激光器阵列的多个半导体器件发射的反向发射来实现半导体激光器阵列的自动功率控制（APC）。基于检测到的排放物调整到激光器的驱动信号。安装在安装有半导体激光器阵列的基座中的光电传感器被定位成从后向发射接收光电流。激光器阵列上的扫描注入电流提供对后向发射的顺序检测，从而提供自动功率控制（APC）。

34. 发明授权

US6091754A VCSEL having integrated photodetector for automatic power control 失效
标题翻译：具有集成光电检测器的VCSEL用于自动功率控制
公开(公告)号：US6091754A
公开(公告)日：2000-07-18
申请号：US66658
申请日：1998-04-27
申请人： Wenbin Jiang , Michael S. Lebby
发明人： Wenbin Jiang , Michael S. Lebby
IPC分类号： H01S5/026 , H01S5/183 , H01S5/42 , H01S3/19
CPC分类号： H01S5/0264 , H01S5/18308 , H01S5/2059
摘要： A VCSEL (113) having a first and a second stack of distributed Bragg reflectors (120, 116) and an active region (118) is formed. Conductive layers (108 and 109) having an opening is formed on the second stack of distributed Bragg reflectors (116). A first region (104), a second region (106), and a third region (108) are formed in the opening of the conductive layer (108), thereby providing a contact to both the second stack of distributed Bragg reflectors (116) and to the first region (104). An insulative layer (220) is disposed on the substrate (124), thereby insulating the second region (106) from the conductive layer (108). A conductive layer (134) having second opening disposed substantially overlying the first opening, thereby electrically coupling the third region (108) to the conductive layer (134) with the second opening allowing a light (121) to pass.
摘要翻译：形成具有分布布拉格反射器（120,116）和有源区域（118）的第一和第二堆叠的VCSEL（113）。具有开口的导电层（108和109）形成在分布式布拉格反射器（116）的第二堆叠上。在导电层（108）的开口中形成有第一区域（104），第二区域（106）和第三区域（108），从而与分布式布拉格反射器（116）的第二层叠体和第一区域（104）。绝缘层（220）设置在基板（124）上，从而使第二区域（106）与导电层（108）绝缘。导电层（134）具有基本上覆盖第一开口的第二开口，从而将第三区域（108）与导电层（134）电耦合，第二开口允许光（121）通过。

35. 发明授权

US5886972A Recording information in a phase change optical medium with a vertical cavity surface emitting laser 失效
标题翻译：在具有垂直腔表面发射激光器的相变光学介质中记录信息
公开(公告)号：US5886972A
公开(公告)日：1999-03-23
申请号：US582244
申请日：1996-01-03
申请人： Wenbin Jiang , Michael S. Lebby
发明人： Wenbin Jiang , Michael S. Lebby
IPC分类号： G11B7/0045 , G11B7/125 , H01S5/00 , H01S5/028 , H01S5/183 , H01S3/19 , G11B7/00
CPC分类号： H01S5/18394 , G11B7/00454 , G11B7/127 , H01S2301/16 , H01S2301/206
摘要： An apparatus for changing the phase of an optical storage medium changeable between a reflective phase and a dispersive phase. The apparatus including a quasi-multimode vertical cavity surface emitting laser constructed to provide a laser beam in a square shaped mode, to be directed onto the storage medium.
摘要翻译：一种用于改变可在反射相和色散相之间变化的光存储介质的相位的装置。该装置包括被构造成提供正方形模式的激光束的准多模垂直腔表面发射激光器，以被引导到存储介质上。

36. 发明授权

US5881084A Semiconductor laser for package with power monitoring system 失效
标题翻译：半导体激光器封装带电源监控系统
公开(公告)号：US5881084A
公开(公告)日：1999-03-09
申请号：US814532
申请日：1997-03-10
申请人： Rong-Ting Huang , Wenbin Jiang , Michael S. Lebby
发明人： Rong-Ting Huang , Wenbin Jiang , Michael S. Lebby
IPC分类号： H01S5/00 , H01S5/022 , H01S5/042 , H01S5/183 , H01S3/18
CPC分类号： H01S5/02248 , H01S5/02208 , H01S5/0683 , H01S5/183
摘要： A semiconductor laser package and method of fabrication including a vertical cavity surface emitting laser and a power monitoring system, such as a photodetector mounted on a mounting base. An optical element, such as a beam splitter, formed integral with the mounting base or as a separate element positioned on the mounting base in optical alignment with an emission generated by the vertical cavity surface emitting laser. The optical element characterized by reflecting a portion of the emission in the direction of the photodetector and allowing a portion of the emission to pass therethrough. An overmolded housing is positioned on the mounting base to enclose the vertical cavity surface emitting laser, the photodetector and the optical element.
摘要翻译：一种半导体激光器封装及其制造方法，包括垂直腔表面发射激光器和功率监控系统，例如安装在安装基座上的光电检测器。一种光学元件，例如分束器，其与安装基座一体形成，或者作为与由垂直腔表面发射激光器产生的发射光学对准的位于安装基座上的单独元件。所述光学元件的特征在于，在所述光电检测器的方向上反射所述发射的一部分并允许所述发射的一部分通过。包覆模制的壳体位于安装基座上以包围垂直腔表面发射激光器，光电检测器和光学元件。

37. 发明授权

US5838703A Semiconductor laser package with power monitoring system and optical element 失效
标题翻译：具有功率监控系统和光学元件的半导体激光封装
公开(公告)号：US5838703A
公开(公告)日：1998-11-17
申请号：US719829
申请日：1996-09-30
申请人： Michael S. Lebby , John W. Stafford , Wenbin Jiang
发明人： Michael S. Lebby , John W. Stafford , Wenbin Jiang
IPC分类号： H01S3/00 , H01S5/00 , H01S5/022 , H01S5/026 , H01S5/183 , H01S3/18 , H01S3/04 , H01S3/08 , H01S3/13
CPC分类号： H01S5/02288 , H01L2224/48091 , H01S5/02216 , H01S5/0683 , H01S5/183
摘要： A semiconductor laser package including a mounting structure at least partially encapsulating a vertical cavity surface emitting laser and a photodetector. The vertical cavity surface emitting laser generating an emission along a path. The photodetector optically positioned and/or integrally formed with the vertical cavity surface emitting laser to receive a portion of the emission. An optical element is optionally positioned in the path, mounted on the mounting structure utilizing a snap-fit connection, a threaded or adhesive mounting. The mounting structure and optical element are fabricated to allow for proper z-axis alignment of the optical element relative to the laser emission aperture.
摘要翻译：一种半导体激光器封装，包括至少部分地封装垂直腔表面发射激光器的安装结构和光电检测器。垂直腔表面发射激光器沿着路径产生发射。光电探测器与垂直腔表面发射激光器光学定位和/或整体地形成以接收发射的一部分。光学元件可选地定位在路径中，利用卡扣连接，螺纹或粘合剂安装安装在安装结构上。制造安装结构和光学元件以允许光学元件相对于激光发射孔的适当的z轴对准。

38. 发明授权

US5789733A Smart card with contactless optical interface 失效
标题翻译：智能卡带有非接触式光接口
公开(公告)号：US5789733A
公开(公告)日：1998-08-04
申请号：US717058
申请日：1996-09-20
申请人： Karen E. Jachimowicz , Scott R. Novis , Dennis Barry , Wenbin Jiang , Michael S. Lebby
发明人： Karen E. Jachimowicz , Scott R. Novis , Dennis Barry , Wenbin Jiang , Michael S. Lebby
IPC分类号： G06K7/10 , G06K19/077 , G06K19/06
CPC分类号： G06K19/0728 , G06K19/07749 , G06K7/1097
摘要： An optical smart card (10) including a microchip (14) having information stored thereon, an optical holographic sensor pad (16) capable of detecting and collecting light beams emitted from a remote reader/transmitter (52), a light source (18) capable of emitting dataelectronic information contained on the microchip (14) back to the remote reader/transmitter (52) and electronics (20) connected to the sensor pad (16), the light source (18) and the microchip (14).
摘要翻译：一种光学智能卡（10），包括具有存储在其上的信息的微芯片（14），能够检测和收集从远程读取器/发射器（52）发射的光束的光学全息传感器垫（16），光源（18）能够将包含在微芯片（14）上的数据电子信息发送回连接到传感器焊盘（16），光源（18）和微芯片（14）的远程读取器/发射器（52）和电子器件（20）。

39. 发明授权

US5774486A Waveguide power monitoring system for vertical cavity surface emitting lasers 失效
标题翻译：用于垂直腔面发射激光器的波导功率监控系统
公开(公告)号：US5774486A
公开(公告)日：1998-06-30
申请号：US641256
申请日：1996-04-30
申请人： Wenbin Jiang , Michael S. Lebby
发明人： Wenbin Jiang , Michael S. Lebby
IPC分类号： G02B6/42 , H01S5/022 , H01S5/183 , H01S3/13 , G02B6/26 , G02B6/36 , H01S3/00
CPC分类号： H01S5/02284 , G02B6/42 , G02B6/4274 , G02B6/4286 , G02B6/4236 , H01S5/005 , H01S5/0683 , H01S5/183
摘要： A power monitoring system including a vertical cavity surface emitting laser generating an emission. A beam splitter optically positioned to receive the emission and split the emission into a first portion and a second portion. A monitor optically positioned to receive the first portion of the emission. An output of the monitor is used to control emissions of the vertical cavity surface emitting lasers.
摘要翻译：一种功率监测系统，包括产生发射的垂直腔表面发射激光器。光束分离器，其光学定位以接收发射并将发射分裂成第一部分和第二部分。一种用于接收发射的第一部分的光学定位的监视器。监视器的输出用于控制垂直腔表面发射激光器的发射。

40. 发明授权

US5636298A Coalescing optical module and method for making 失效
标题翻译：聚光光模块及其制作方法
公开(公告)号：US5636298A
公开(公告)日：1997-06-03
申请号：US699318
申请日：1996-08-19
申请人： Wenbin Jiang , Michael S. Lebby
发明人： Wenbin Jiang , Michael S. Lebby
IPC分类号： G02B6/122 , G02B6/30 , G02B6/42 , G02B6/26
CPC分类号： G02B6/4249 , G02B6/1221 , G02B6/30 , G02B6/42 , G02B6/4232
摘要： An optical module (100) having a first side (103) and a second side (104), a plurality of input optical ports (144) and an output optical port (120) is formed. The input optical ports (144) are disposed on the first side (103) with the output optical port (156) being disposed on the second side (104) of the optical module (100). A plurality of bifurcated waveguides (118) are disposed in the optical module, the bifurcated waveguides (118) coalesce light from the plurality of input optical ports (144) into a single high power output at the output optical port (120).
摘要翻译：具有第一侧（103）和第二侧（104）的光学模块（100），多个输入光学端口（144）和输出光学端口（120）。输入光学端口（144）设置在第一侧（103）上，输出光学端口（156）设置在光学模块（100）的第二侧（104）上。多个分支波导（118）设置在光学模块中，分叉波导（118）将来自多个输入光学端口（144）的光聚结成在输出光学端口（120）处的单个高功率输出。

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