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31. 发明申请

US20070154222A1 Half duplex type optical connection structure and optical device suitable for the same 审中-公开
标题翻译：半双工型光连接结构和光学装置适合相同
公开(公告)号：US20070154222A1
公开(公告)日：2007-07-05
申请号：US11592304
申请日：2006-11-02
申请人： Seung-Woo Kim , In Kim , Jeong-Seok Lee
发明人： Seung-Woo Kim , In Kim , Jeong-Seok Lee
IPC分类号： H04B10/12
CPC分类号： H04B10/43
摘要： Disclosed is an optical connection structure of half-duplex transmission type and an optical device suitable for the same. The optical connection structure of half-duplex type comprises two or more signal transmitting/receiving units, which are interconnected through an optical waveguide, wherein each of the signal transmitting/receiving units comprises an optical device having a light source for producing and emitting optical signals to the outside through an opening, and a photodetector for receiving the optical signals incident thereto and converting the optical signals into electric signals, the light source and the photodetector being integrated with each other; and a control unit, which in the signal transmitting mode, drives the light source, so that the corresponding signal transmitting/receiving unit functions as a light source, and in the signal receiving mode, drives the photodetector, so that the corresponding signal transmitting/receiving unit functions as a photodetector.
摘要翻译：公开了半双工传输类型的光连接结构和适合于此的光学装置。半双工类型的光连接结构包括两个或多个通过光波导互连的信号发射/接收单元，其中信号发射/接收单元中的每一个包括具有用于产生和发射光信号的光源的光学装置以及用于接收入射到其上的光信号并将光信号转换为电信号的光电检测器，光源和光电检测器彼此集成; 以及控制单元，其在信号发送模式下驱动光源，使得相应的信号发送/接收单元用作光源，并且在信号接收模式中驱动光电检测器，使得相应的信号发送/ 接收单元用作光电检测器。

32. 发明申请

US20070087165A1 Method of manufacturing plastic substrate using plasma process and plastic substrate manufactured using the method 失效
标题翻译：使用该方法制造的使用等离子体工艺和塑料基板的塑料基板的制造方法
公开(公告)号：US20070087165A1
公开(公告)日：2007-04-19
申请号：US11507352
申请日：2006-08-21
申请人： Gihune Jung , Jinseok Kang , Hee Kim , Ji Kwon , Young Lee , Young Seo , In Kim
发明人： Gihune Jung , Jinseok Kang , Hee Kim , Ji Kwon , Young Lee , Young Seo , In Kim
IPC分类号： B05D3/00 , C08J7/18 , B32B27/36 , B32B27/38 , B32B27/32
CPC分类号： B29C59/14 , B01J2219/00527 , B01J2219/00605 , B01J2219/0061 , B01J2219/00635 , B01J2219/00659 , B01J2219/0072 , B01J2219/00722 , B01L3/508 , B01L2300/0819 , B01L2300/0822 , B01L2300/168 , C08J7/123 , C08J7/18 , Y10T428/24355 , Y10T428/31507 , Y10T428/31511 , Y10T428/31536 , Y10T428/31855 , Y10T428/31938
摘要： Provided is a method of manufacturing a plastic substrate with lower auto-fluorescence and better specificity. The method includes: (a) preparing a plastic substrate having an Atomic Force Microscopic (AFM) surface roughness of Ra
摘要翻译：提供一种制造具有较低自动荧光和更好特异性的塑料基材的方法。该方法包括：（a）在条件下制备具有原子力显微镜（AFM）表面粗糙度R＆lt; 3 NM或R＆gt;＆lt; 4nm的塑料基材 50 mumx50 mum以下; （b）用等离子体处理塑料基板; 和（c）用表面改性单体处理塑料基材。还提供了通过该方法制造的塑料基板。塑料基材显示出非常低的自动荧光，因此更好地检测目标生物分子的特异性，其能够广泛应用塑料基材，其可以容易地设计成包括相对于玻璃基材的微流体结构，但是已被有限地使用由于高自动荧光，微阵列，生物芯片或孔板。此外，塑料基板的制造方法能够提高塑料基板的表面特性，容易调整塑料基板的表面特性。

33. 发明申请

US20070066468A1 Conductive transfer roller usable with image forming apparatus 审中-公开
标题翻译：可用于图像形成装置的导电转印辊
公开(公告)号：US20070066468A1
公开(公告)日：2007-03-22
申请号：US11363170
申请日：2006-02-28
申请人： In Kim
发明人： In Kim
IPC分类号： F16C13/00
CPC分类号： G03G15/1685 , Y10T29/49563
摘要： A conductive transfer roller for an image forming apparatus comprises an elastomer foam formed by blowing a blended raw material, which includes elastomer, 1-4 phr of liquid thiophene as conductive material, and 0.2-6 phr of wood powder as nucleating agent. The transfer roller has a uniform cell size and distribution, thereby having a superior elasticity, which enables the transfer roller to have a desired level of resistance in terms of conductivity and is environment-friendly.
摘要翻译：用于图像形成装置的导电转印辊包括通过将包含弹性体的1-4phr液体噻吩作为导电材料的混合原料和0.2-6phr的作为成核剂的木粉进行吹塑而形成的弹性体泡沫。转印辊具有均匀的泡孔尺寸和分布，因此具有优异的弹性，这使得转印辊在导电性方面具有期望的电阻水平，并且是环境友好的。

34. 发明申请

US20070003329A1 Developing roller including carbon nanotubes for electrophotographic device and method for fabricating the developing roller 有权
标题翻译：包括用于电子照相设备的碳纳米管的显影辊和用于制造显影辊的方法
公开(公告)号：US20070003329A1
公开(公告)日：2007-01-04
申请号：US11377720
申请日：2006-03-17
申请人： In Kim
发明人： In Kim
IPC分类号： G03G15/08
CPC分类号： G03G15/0818
摘要： A development roller for electrophotographic device and a method of making the development roller are disclosed. The development roller according to the present invention includes a central shaft and a roller body. The roller body is composed of an elastic polymer material as a primary material and carbon nanotubes in an amount to provide the conductivity of the roller body. According to the present invention, the development roller can exhibit a low hardness and a low resistance at the same time, produce images having high sharpness, and does not contaminate images.
摘要翻译：公开了一种用于电子照相设备的显影辊和制造该显影辊的方法。根据本发明的显影辊包括中心轴和辊体。辊体由作为主要材料的弹性聚合物材料和以提供辊体的导电性的量的碳纳米管组成。根据本发明，显影辊可以同时显示低硬度和低电阻，产生具有高锐度的图像，并且不会污染图像。

35. 发明授权

US07142343B2 Electro-absorptive optical modulator module having monolithic integrated photo detector 有权
标题翻译：具有单片集成光电检测器的吸收光调制器模块
公开(公告)号：US07142343B2
公开(公告)日：2006-11-28
申请号：US10837938
申请日：2004-05-03
申请人： In Kim , Young-Hyun Kim , Byung-Kwon Kang
发明人： In Kim , Young-Hyun Kim , Byung-Kwon Kang
IPC分类号： G02F1/03 , G02F1/07
CPC分类号： H01S5/12 , H01S5/0264 , H01S5/0265 , H01S5/106 , H01S5/1064 , H01S5/1203
摘要： An electro-absorptive optical modulator module monolithic-integrated on a semiconductor substrate, which includes a distributed feedback laser having a grating for oscillating light and to output the oscillated light through a first end and a second end of the module. An electro-absorptive modulator modulates a first light output through the first end of the distributed feedback laser, and an optical detector provides detection of a second light output through the second end of the module. The optical detector is formed opposite to the second end of the distributed feedback laser on the semiconductor substrate. A first inner window permits attenuation of the intensity of the second light and electrically insulates the distributed feedback laser and the optical detector from each other, with the first inner window being arranged between the distributed feedback laser and the optical detector.
摘要翻译：一种单片集成在半导体衬底上的电吸收光调制器模块，其包括具有用于振荡光的光栅的分布式反馈激光器，并且通过模块的第一端和第二端输出振荡的光。电吸收调制器通过分布式反馈激光器的第一端调制第一光输出，并且光学检测器提供通过模块的第二端的第二光输出的检测。光检测器形成在半导体衬底上与分布反馈激光器的第二端相对。第一内部窗口允许衰减第二光的强度并使分布式反馈激光器和光学检测器彼此电绝缘，其中第一内部窗口布置在分布式反馈激光器和光学检测器之间。

36. 发明申请

US20060109884A1 Distributed feedback semiconductor laser and method for manufacturing the same 审中-公开
标题翻译：分布式反馈半导体激光器及其制造方法
公开(公告)号：US20060109884A1
公开(公告)日：2006-05-25
申请号：US11250209
申请日：2005-10-14
申请人： Young-Hyun Kim , Jung-Kee Lee , In Kim , Sung-Soo Park
发明人： Young-Hyun Kim , Jung-Kee Lee , In Kim , Sung-Soo Park
IPC分类号： H01S5/00 , H01S3/08
CPC分类号： H01S5/1228 , H01S5/2275
摘要： A distributed feedback semiconductor laser oscillating in a single mode and a method for manufacturing the same is disclosed. The distributed feedback semiconductor laser includes an active layer; a clad layer formed adjacent to the active layer; and diffraction gratings periodically formed in the clad layer and separated from each other by a predetermined distance. The diffraction gratings are formed of a nonconductor so that a current injected into the active layer is partially blocked and distribution of gain coefficient is varied. The nonconductor is an oxidized semiconductor material.
摘要翻译：公开了一种单模振荡的分布式反馈半导体激光器及其制造方法。分布式反馈半导体激光器包括有源层; 与活性层相邻形成的覆层; 以及在包层中周期性地形成并且彼此分开预定距离的衍射光栅。衍射光栅由非导体形成，使得注入有源层的电流被部分阻挡，并且增益系数的分布变化。非导体是氧化半导体材料。

37. 发明申请

US20050136630A1 Methods of forming a pattern for a semiconductor device 有权
标题翻译：形成半导体器件图案的方法
公开(公告)号：US20050136630A1
公开(公告)日：2005-06-23
申请号：US11021072
申请日：2004-12-22
申请人： In Kim
发明人： In Kim
IPC分类号： H01L21/027 , H01L21/3205 , H01L21/3213 , H01L21/4763
CPC分类号： H01L21/32139 , H01L21/0273
摘要： Methods of forming a pattern for a semiconductor device are disclosed, wherein a critical dimension (CD) of a pattern can be accurately controlled and, thus, finer critical dimension can be realized. An illustrated example method comprises: forming an etching target layer on a semiconductor substrate; forming a photoresist pattern on the etching target layer; forming polymer spacers on side surfaces of the photoresist pattern to improve side-surface roughness of the photoresist pattern; and etching the etching target layer using the photoresist pattern and the polymer spacers as a mask to form a pattern.
摘要翻译：公开了形成用于半导体器件的图案的方法，其中可以精确地控制图案的临界尺寸（CD），从而可以实现更精细的临界尺寸。所示的示例方法包括：在半导体衬底上形成蚀刻目标层; 在蚀刻目标层上形成光致抗蚀剂图案; 在光致抗蚀剂图案的侧表面上形成聚合物间隔物以改善光致抗蚀剂图案的侧表面粗糙度; 并使用光致抗蚀剂图案和聚合物间隔物作为掩模蚀刻蚀刻目标层以形成图案。

38. 发明申请

US20050118624A1 Fluorescent probes for ribosomes and method of use 审中-公开
标题翻译：核糖体荧光探针及其使用方法
公开(公告)号：US20050118624A1
公开(公告)日：2005-06-02
申请号：US10954996
申请日：2004-09-30
申请人： Zhenkun Ma , Jing Li , In Kim , Yafei Jin , Anthony Lynch , Eric Roche , Doug Beeman
发明人： Zhenkun Ma , Jing Li , In Kim , Yafei Jin , Anthony Lynch , Eric Roche , Doug Beeman
IPC分类号： C07H17/08 , C07H21/04 , C09B11/08 , C09B11/24 , C09B23/01 , C12Q1/68 , G01N33/533 , G01N33/58
CPC分类号： C09B11/08 , C09B11/24 , C09B23/0075 , G01N33/533 , G01N33/582 , G01N2500/00
摘要： Fluorescent probes that have binding affinity to ribosomes. The fluorescent probes are useful tools for identifying small molecules that bind to the 50S or 30S subunits of the bacterial and other ribosomes and serve as novel ribosome inhibitors. These probes are also useful for determining the interactions between a specific ligand and the ribosome.
摘要翻译：对核糖体具有结合亲和力的荧光探针。荧光探针是用于鉴定结合细菌和其他核糖体的50S或30S亚基的小分子并用作新的核糖体抑制剂的有用工具。这些探针也可用于确定特异性配体和核糖体之间的相互作用。

39. 发明申请

US20050116265A1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US20050116265A1
公开(公告)日：2005-06-02
申请号：US10950828
申请日：2004-09-27
申请人： Naoto Inoue , Hitomi Sakurai , Min Paek , Sang Kim , In Kim
发明人： Naoto Inoue , Hitomi Sakurai , Min Paek , Sang Kim , In Kim
IPC分类号： H01L21/76 , H01L21/762 , H01L21/8234 , H01L21/8238 , H01L27/08 , H01L27/088 , H01L27/092 , H01L29/76
CPC分类号： H01L27/0921 , H01L21/76237 , H01L21/823814 , H01L21/823878
摘要： In a semiconductor device in which high voltage MOS transistors and low voltage MOS transistors are mixedly mounted, a process is simplified and miniaturization thereof is achieved, without causing a parasitic transistor operation. An active region doped with a low impurity concentration of an impurity is formed in a channel region of a parasitic MOS transistor between two STI (shallow trench isolation) regions, and current flow between a source and a drain of the parasitic MOS transistor is cut off in a semiconductor device in which a high voltage MOS transistor and a microscopic low voltage MOS transistor are mixedly mounted on the same semiconductor substrate.
摘要翻译：在混合安装高压MOS晶体管和低压MOS晶体管的半导体器件中，简化了工艺并实现了其小型化，而不会引起寄生晶体管的操作。在两个STI（浅沟槽隔离）区域之间的寄生MOS晶体管的沟道区域中形成掺杂有杂质浓度低的有源区，并且将寄生MOS晶体管的源极与漏极之间的电流切断在其中将高电压MOS晶体管和微观低电压MOS晶体管混合安装在同一半导体衬底上的半导体器件中。

40. 发明授权

US5547883A Method for fabricating thin film transistor 失效
标题翻译：制造薄膜晶体管的方法
公开(公告)号：US5547883A
公开(公告)日：1996-08-20
申请号：US504688
申请日：1995-07-20
申请人： In Kim
发明人： In Kim
IPC分类号： H01L21/265 , H01L21/336 , H01L21/84 , H01L29/423 , H01L29/786 , H01L21/86
CPC分类号： H01L29/78696 , H01L21/84 , H01L29/42384 , H01L29/66765 , H01L29/78624 , H01L29/78642 , Y10S148/15
摘要： A thin film transistor having increased channel length and self-aligned source and drain regions is fabricated by forming a gate electrode on an insulation film disposed on a substrate. Portions of the insulation film are then etched on opposite sides of the gate electrode, as well as beneath part of the gate electrode. A gate insulation film is then formed on the entire exposed surface of the gate electrode, and a semiconductor layer is then formed on the entire gate insulation film, as well as portions of the insulation film. Doping impurities may then be implanted at an angle other than 90.degree. to the surface of the substrate to achieve a thin film transistor having an extended channel length but occupying a relatively small area on the surface of the substrate.
摘要翻译：通过在设置在基板上的绝缘膜上形成栅电极来制造具有增加的沟道长度和自对准源极和漏极区的薄膜晶体管。然后在栅电极的相对侧以及栅电极的下方蚀刻绝缘膜的一部分。然后在栅电极的整个暴露表面上形成栅极绝缘膜，然后在整个栅极绝缘膜上形成半导体层以及绝缘膜的一部分。然后可以以与基板表面90度以外的角度注入掺杂杂质，以实现具有延伸的沟道长度但占据基板表面上较小面积的薄膜晶体管。

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