专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

31. 发明授权

US08426874B2 Light emitting transistor 失效
公开(公告)号：US08426874B2
公开(公告)日：2013-04-23
申请号：US12612931
申请日：2009-11-05
申请人： Junji Kido , Daigo Aoki
发明人： Junji Kido , Daigo Aoki
IPC分类号： H01L27/15 , H01L29/06 , H01L33/00
CPC分类号： H01L51/5296 , H01L33/405 , H01L51/0508 , H01L51/52 , H01L2251/5315
摘要： A main object of the present invention is to provide a static induction light emitting transistor having an organic EL element structure and a vertical FET structure which is possible to avoid a problem of the shielding of light and a problem of shielding of electric field by a gate electrode. The above object is achieved by providing a light emitting transistor 11 of a vertical FET structure comprising: on a substrate 12; a source electrode 13; a hole transporting layer 14 in which a slit-shaped gate electrode 15 is embedded; an equipotential layer 16; light emitting layer 17; and a transparent or semitransparent drain electrode 18, provided in this order. In this light emitting transistor, the drain electrode 18 provided on the opposite side of the gate electrode 15, viewing from the light emitting layer 17, is transparent or semitransparent. Therefore, light generated in the light emitting layer 17 can be taken out from the drain electrode side. An electron transporting layer 19 can be provided between the light emitting layer 17 and the drain electrode 18.

32. 发明授权

US08149540B2 Magnetic head structure with diagonal of rectangular-shaped height monitor extending along track width direction 有权
标题翻译：磁头结构与矩形高度监视器对角线沿轨道宽度方向延伸
公开(公告)号：US08149540B2
公开(公告)日：2012-04-03
申请号：US11925104
申请日：2007-10-26
申请人： Daigo Aoki , Kenji Honda
发明人： Daigo Aoki , Kenji Honda
IPC分类号： G11B5/455
CPC分类号： G11B5/3133 , G11B5/3166 , G11B5/3169 , G11B5/3173
摘要： In a magnetic head structure that forms a medium facing surface of a head element unit by polishing processing, a height monitor that is exposed in the vicinity of the head element unit during the polishing processing to index the height of the head element unit is provided in a planar rectangular shape.
摘要翻译：在通过抛光处理形成头元件单元的与介质相对表面的磁头结构中，在抛光处理期间暴露在头元件单元附近的高度监视器被设置在头元件单元的高度索引中平面矩形。

33. 发明授权

US07623324B2 Magnetic sensing element having reactive-ion-etching stop layer and process for producing same 有权
标题翻译：具有反应离子蚀刻停止层的磁感应元件及其制造方法
公开(公告)号：US07623324B2
公开(公告)日：2009-11-24
申请号：US11424495
申请日：2006-06-15
申请人： Kenji Honda , Naohiro Ishibashi , Daigo Aoki , Yasuo Hayakawa , Yoshihiro Nishiyama , Toshihiro Kobayashi
发明人： Kenji Honda , Naohiro Ishibashi , Daigo Aoki , Yasuo Hayakawa , Yoshihiro Nishiyama , Toshihiro Kobayashi
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3163 , G11B5/3912 , G11B5/3932 , G11B2005/3996 , H01F10/3254 , H01F41/308
摘要： A magnetic sensing element including a laminate and a bias layer is provided. A first reactive-ion-etching (RIE) stop layer is disposed on a free magnetic layer. Second RIE stop layers are disposed on bias layers. The first and second RIE stop layers function as stop layers when layers on the first and second RIE stop layers are removed by reactive ion etching in a production process. Reactive ion etching is completed when the first RIE stop layer and the second RIE stop layers are exposed, the first and second RIE stop layers being disposed at almost the same height. Also provided is a process for producing the magnetic sensing element.
摘要翻译：提供了包括层叠体和偏置层的磁感应元件。第一反应离子蚀刻（RIE）停止层设置在自由磁性层上。第二RIE停止层设置在偏置层上。当生产过程中通过反应离子蚀刻去除第一和第二RIE停止层上的层时，第一和第二RIE停止层用作停止层。当第一RIE停止层和第二RIE停止层暴露时，第一和第二RIE停止层设置在几乎相同的高度处，完成反应离子蚀刻。还提供了一种用于制造磁感测元件的方法。

34. 发明申请

US20070127162A1 MAGNETIC HEAD DEVICE PROVIDED WITH LEAD ELECTRODE ELECTRICALLY CONNECTED TO UPPER SHIELD LAYER AND LOWER SHIELD LAYER 审中-公开
标题翻译：电磁头装置与铅电极电连接到上面的屏蔽层和较低的屏蔽层
公开(公告)号：US20070127162A1
公开(公告)日：2007-06-07
申请号：US11567573
申请日：2006-12-06
申请人： Yoshihiro Nishiyama , Daigo Aoki , Toru Takahashi
发明人： Yoshihiro Nishiyama , Daigo Aoki , Toru Takahashi
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G11B5/3912 , G11B2005/3996
摘要： A lower shield layer and an upper shield layer are formed to have a planar shape, and a detecting element is provided between the lower shield layer and the upper shield layer. A lower conductive electrode is formed to adhere closely to a facing inner surface corresponding to a top surface of the lower shield layer, and an upper conductive electrode is formed to adhere closely to an outer surface located on the upper shield layer. Therefore, even though a facing interval between the lower shield layer and the upper shield layer is small, an electrical insulating property may be achieved.
摘要翻译：下屏蔽层和上屏蔽层形成为平面形状，并且在下屏蔽层和上屏蔽层之间设置检测元件。形成下导电电极以紧密附着在与下屏蔽层的顶表面相对应的相对的内表面上，并且形成上导电电极以紧密地附着到位于上屏蔽层上的外表面。因此，即使下屏蔽层和上屏蔽层之间的面对间隔小，也可以实现电绝缘性。

35. 发明授权

US07190113B2 Method of producing electroluminescent element 失效
标题翻译：电致发光元件的制造方法
公开(公告)号：US07190113B2
公开(公告)日：2007-03-13
申请号：US10634009
申请日：2003-08-04
申请人： Daigo Aoki
发明人： Daigo Aoki
IPC分类号： H05B33/00 , H05B33/14 , H01L51/50
CPC分类号： H01L51/56 , B82Y10/00 , B82Y30/00 , H01L51/0015 , H05B33/10 , H05B33/14
摘要： A method of producing an electroluminescent element. Preparing an electrode layer, and forming, on the electrode layer or an electric charge injection transportation layer formed on the electrode layer, a decomposition removal layer. Placing a photocatalyst treatment layer and the decomposition removal layer at an interval of 200 μm or less and conducting pattern irradiation to form the decomposition removal layer into a pattern. Removing the photocatalyst treatment layer from the decomposition removal, and forming an organic electroluminescent layer on the electrode layer or the decomposition removal layer according to the pattern of the decomposition removal layer.
摘要翻译：一种制造电致发光元件的方法。制备电极层，并在电极层上形成电极注入输送层，形成在电极层上的分解去除层。以200μm以下的间隔配置光催化剂处理层和分解去除层，进行图案照射，形成分解去除层。从分解去除中去除光催化剂处理层，根据分解去除层的图案在电极层或分解去除层上形成有机电致发光层。

36. 发明申请

US20050147766A1 Process for manufacturing pattern forming body 审中-公开
标题翻译：制造图案成形体的工艺
公开(公告)号：US20050147766A1
公开(公告)日：2005-07-07
申请号：US11058584
申请日：2005-02-15
申请人： Daigo Aoki
发明人： Daigo Aoki
IPC分类号： G02B5/20 , H01L51/00 , H01L51/30 , H01L51/40 , H01L51/50 , H01L51/56 , H05B33/10 , B05D3/00
CPC分类号： H01L51/56 , G02B5/201 , H01L51/0004 , H01L51/0005 , H01L51/0037 , H01L51/0042 , H01L51/005 , H01L51/0052
摘要： A main object of the present invention is to provide a process for manufacturing a pattern forming body which can coat a functional part-forming coating solution even when a nozzle discharging method is used at a high precision. The present invention attains the above object by providing a process for manufacturing a pattern forming body, which comprises: a charge-electrified pattern-forming process of forming a pattern comprising a charge-electrified region electrified with a charge and a charge-nonelectrified region electrified with no charge, on a substrate, and a functional part pattern-forming process of forming a pattern of a functional part by discharging and coating a functional part-forming coating solution on the charge-nonelectrified region by a nozzle discharging method.
摘要翻译：本发明的主要目的在于提供即使在高精度地使用喷嘴排出法的情况下也能够涂布功能性成形用涂布液的图案形成体的制造方法。本发明通过提供一种图案形成体的制造方法而实现上述目的，该方法包括：形成包含充电带电的带电区域和带电的电荷非电离区域的图案的带电图案形成工艺通过喷嘴排出法在电荷分离区域上排出涂布功能性部位形成用涂布液而形成功能部件的图案的功能部件图案形成工序。

37. 发明授权

US5424156A Electrostatic information recording medium and method of recording and reproducing electrostatic information 失效
标题翻译：静电信息记录介质和静电信息的记录和再现方法
公开(公告)号：US5424156A
公开(公告)日：1995-06-13
申请号：US838206
申请日：1992-03-05
申请人： Daigo Aoki , Minoru Utsumi , Hiroyuki Obata
发明人： Daigo Aoki , Minoru Utsumi , Hiroyuki Obata
IPC分类号： G03G5/02 , G03G5/026 , G03G5/047 , G03G13/26 , G03G15/05 , G03G15/22 , G11B9/08 , G03G15/02
CPC分类号： G03G5/047 , G03G13/26 , G03G15/04072 , G03G15/05 , G03G15/221 , G03G5/02 , G03G5/026 , G11B9/08
摘要： An electrostatic information recording medium according to this invention includes an inorganic oxide layer 3 and a photoconductive layer comprising a charge-generating layer 4 and a charge-transport layer 5 laminated onto an electrode 2 in this sequence, as illustrated in FIG. 1. To record information, the information is exposed to light while voltage is being applied between the electrode 3 and another opposite electrode, or alternatively voltage is applied therebetween while the information is being exposed to light.After information recording, the electrostatic information recording medium is uniformly electrified on its surface as by corona charging, whereby the information can be easily reproduced in the form of electrostatic information. This recording medium, if tone-developed, can be used as an original plate for electrostatic printing.
摘要翻译： PCT No.PCT / JP91 / 00907 Sec。 371日期：1992年3月5日 102（e）日1991年3月5日PCT PCT 1991年7月6日。根据本发明的静电信息记录介质包括无机氧化物层3和包含电荷产生层4和电荷传输层 5，按照该顺序层压在电极2上，如图5所示。为了记录信息，当在电极3和另一相对电极之间施加电压时，信息暴露于光，或者当信息被曝光时施加电压。在信息记录之后，静电信息记录介质通过电晕充电在其表面上均匀通电，从而可以以静电信息的形式容易地再现信息。如果色调显示，该记录介质可以用作静电印刷的原始板。

38. 发明授权

US08567255B2 Semiconductor pressure sensor having a recess with a larger area than a planar shape of a diaphragm 有权
标题翻译：半导体压力传感器具有比隔膜的平面形状大的面积的凹部
公开(公告)号：US08567255B2
公开(公告)日：2013-10-29
申请号：US13109769
申请日：2011-05-17
申请人： Daigo Aoki , Hideyuki Hashimoto , Tetsuya Kobayashi , Kunio Koizumi , Yoshiaki Shimizu , Yutaka Takashima , Shinya Yokoyama
发明人： Daigo Aoki , Hideyuki Hashimoto , Tetsuya Kobayashi , Kunio Koizumi , Yoshiaki Shimizu , Yutaka Takashima , Shinya Yokoyama
IPC分类号： G01L9/06
CPC分类号： G01L9/0054
摘要： There is provided a semiconductor pressure sensor which improves the sensor sensitivity and is excellent in the withstand pressure characteristic and the temperature characteristic. In the semiconductor pressure sensor in which a diaphragm is formed by a cavity provided on one of top and bottom surfaces of a silicon substrate and a plurality of piezoresistors is disposed in the diaphragm edge, a recess which has a larger area than the planar shape of the diaphragm and whose entire edge is located outward from the diaphragm edge in plan view is provided in a protective film which covers the entire surface of the silicon substrate on the diaphragm side. The protective film located on the diaphragm is preferably formed of SiO2.
摘要翻译：提供了提高传感器灵敏度并且耐压特性和温度特性优异的半导体压力传感器。在半导体压力传感器中，其中隔膜由设置在硅衬底的顶表面和底表面中的一个上的空腔形成，并且多个压电电阻器设置在隔膜边缘中，具有比平面形状大的面积的凹部隔膜的整个边缘在平面图中从隔膜边缘向外定位在覆盖隔膜侧的硅基板的整个表面的保护膜中。位于隔膜上的保护膜优选由SiO 2形成。

39. 发明授权

US08268546B2 Structure for pattern formation, method for pattern formation, and application thereof 失效
标题翻译：图案形成结构，图案形成方法及其应用
公开(公告)号：US08268546B2
公开(公告)日：2012-09-18
申请号：US12122833
申请日：2008-05-19
申请人： Hironori Kobayashi , Manabu Yamamoto , Daigo Aoki , Hironori Kamiyama , Shinichi Hikosaka , Mitsuhiro Kashiwabara
发明人： Hironori Kobayashi , Manabu Yamamoto , Daigo Aoki , Hironori Kamiyama , Shinichi Hikosaka , Mitsuhiro Kashiwabara
IPC分类号： G03F7/26
CPC分类号： B41N1/006 , B29D11/00365 , B41C1/1041 , G02B3/0012 , G02B3/0056 , G02B5/201 , G03F7/0005 , G03F7/0007 , G03F7/001 , G03F7/0043 , G03F7/0757 , G03F7/095 , G03F7/11
摘要： A structure for pattern formation adapted for optically forming a pattern, characterized by comprising: a photocatalyst-containing layer provided on a substrate, the photocatalyst-containing layer containing a material of which the wettability is variable through photocatalytic action upon pattern-wise exposure.
摘要翻译：一种用于图案形成的结构，用于光学地形成图案，其特征在于包括：设置在基底上的含光催化剂的层，所述含光催化剂的层含有通过在图案曝光时的光催化作用可润湿性的材料。

40. 发明申请

US20110260269A1 PIEZORESISTIVE PRESSURE SENSOR 有权
标题翻译： PIEZORESISTIVE压力传感器
公开(公告)号：US20110260269A1
公开(公告)日：2011-10-27
申请号：US13176351
申请日：2011-07-05
申请人： Shinya Yokoyama , Daigo Aoki , Yutaka Takashima
发明人： Shinya Yokoyama , Daigo Aoki , Yutaka Takashima
IPC分类号： H01L29/84
CPC分类号： G01L9/0054 , G01L9/0055
摘要： A piezoresistive pressure sensor is provided, which can prevent the occurrence of ESD breakdown due to the nearness of interconnection layers of a resistive element according to miniaturization thereof. The piezoresistive pressure sensor is so configured that respective semiconductor resistive layers on both sides of an arrangement are formed to be relatively longer than an adjacent semiconductor resistive layer, and thus a corner portion of a semiconductor connection layer that extends from the respective semiconductor resistive layers on both sides of the arrangement and a corner portion of the semiconductor interconnection layer that is nearest to the corner portion of the semiconductor connection layer, between which the ESD breakdown occurs easily, can be separated from each other.
摘要翻译：提供一种压阻式压力传感器，其可以防止由于电阻元件的互连层的接近程度而导致的ESD击穿的发生，因为其小型化。压阻式压力传感器被配置成使得在布置的两侧上的相应的半导体电阻层形成为相对比相邻的半导体电阻层更长，并且因此从半导体电阻层延伸的半导体连接层的角部分布置的两侧和半导体互连层的最接近半导体连接层的角部的角部可以彼此分离，ESD突发之间容易发生ESD损坏。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式