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31. 发明公开

EP1817798A2 CAP LAYERS AND/OR PASSIVATION LAYERS FOR NITRIDE-BASED TRANSISTORS, TRANSISTOR STRUCTURES AND METHODS OF FABRICATING SAME 有权
标题翻译： CAP层和/或钝化氮化晶体管，晶体管结构及其制造方法
公开(公告)号：EP1817798A2
公开(公告)日：2007-08-15
申请号：EP05797731.6
申请日：2005-08-31
申请人： CREE, INC.
发明人： SAXLER, Adam, William , SHEPPARD, Scott , SMITH, Richard, Peter
IPC分类号： H01L29/778 , H01L21/335 , H01L21/318
CPC分类号： H01L29/66462 , H01L21/0237 , H01L21/02378 , H01L21/0254 , H01L21/02584 , H01L21/318 , H01L23/291 , H01L23/3171 , H01L29/2003 , H01L29/7787 , H01L2924/0002 , H01L2924/00
摘要： High electron mobility transistors are provided that include a non-uniform aluminum concentration AlGaN based cap layer having a high aluminum concentration adjacent a surface of the cap layer that is remote from the barrier layer on which the cap layer is provided. High electron mobility transistors are provided that include a cap layer having a doped region adjacent a surface of the cap layer that is remote from the barrier layer on which the cap layer is provided. Graphitic BN passivation structures for wide bandgap semiconductor devices are provided. SiC passivation structures for Group III-nitride semiconductor devices are provided. Oxygen anneals of passivation structures are also provided. Ohmic contacts without a recess are also provided.

32. 发明公开

EP1706895A2 SILICON CARBIDE ON DIAMOND SUBSTRATES AND RELATED DEVICES AND METHODS 有权
标题翻译：碳化硅ON金刚石基和相关设备及方法
公开(公告)号：EP1706895A2
公开(公告)日：2006-10-04
申请号：EP05706059.2
申请日：2005-01-14
申请人： CREE, INC.
发明人： SAXLER, Adam, William
IPC分类号： H01L21/00
CPC分类号： H01L29/1602 , H01L21/02378 , H01L21/02527 , H01L21/0254 , H01L29/778
摘要： A high power, wide-bandgap device is disclosed that exhibits reduced junction temperature and higher power density during operation and improved reliability at a rated power density. The device includes a diamond substrate for providing a heat sink with a thermal conductivity greater than silicon carbide, a single crystal silicon carbide layer on the diamond substrate for providing a supporting crystal lattice match for wide-bandgap material structures that is better than the crystal lattice match of diamond, and a Group III nitride heterostructure on the single crystal silicon carbide layer for providing device characteristics.

33. 发明公开

EP1522091A2 NITRIDE-BASED TRANSISTORS AND METHODS OF FABRICATION THEREOF USING NON-ETCHED CONTACT RECESSES 有权
标题翻译：氮化物基晶体管及其制造方法的NICHTGEÄTZE接触凹槽使用
公开(公告)号：EP1522091A2
公开(公告)日：2005-04-13
申请号：EP03764586.8
申请日：2003-07-15
申请人： CREE, INC.
发明人： SAXLER, Adam, William , SMITH, Richard, Peter , SHEPPARD, Scott, T.
IPC分类号： H01L21/00
CPC分类号： H01L29/66462 , H01L29/2003 , H01L29/7787
摘要： Contacts for a nitride based transistor and methods of fabricating such contacts provide a recess through a regrowth process. The contacts are formed in the recess. The regrowth process includes fabricating a first cap layer comprising a Group III-nitride semiconductor material. A mask is fabricated and patterned on the first cap layer. The pattern of the mask corresponds to the pattern of the recesses for the contacts. A second cap layer comprising a Group III-nitride semiconductor material is selectively fabricated (e.g. grown) on the first cap layer utilizing the patterned mask. Additional layers may also be formed on the second cap layer. The mask may be removed to provide recess(es) to the first cap layer, and contact(s) may be formed in the recess(es). Alternatively, the mask may comprise a conductive material upon which a contact may be formed, and may not require removal.
摘要翻译：用于基于氮化物的晶体管触点及其制造求交往的方法提供通过再生长工艺的凹部。这些接触形成在凹槽。再生长过程包括制造的第一帽层包括III族氮化物半导体材料。掩模制造和图案化在第一覆盖层上。所述掩模的图案对应于所述凹部的触点的图案。第二帽层包括III族氮化物半导体材料在第一覆盖层利用图案化的掩模上制造选择性（例如生长）。附加层可因此被第二帽层上形成。掩模可以被去除，以提供凹部（ES）到第一帽层，并且接触（一个或多个）可以在所述凹部（ES）来形成。可替代地，掩模可以包括导电材料在其上的接触可以形成，并且可以不需要除去。

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