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31. 发明授权

US08283221B2 Configuration and manufacturing method of low-resistance gate structures for semiconductor devices and circuits 有权
标题翻译：半导体器件和电路的低电阻栅极结构的配置和制造方法
公开(公告)号：US08283221B2
公开(公告)日：2012-10-09
申请号：US12657602
申请日：2010-01-25
申请人： Ishiang Shih , Chunong Qiu , Cindy X. Qiu , Yi-Chi Shih
发明人： Ishiang Shih , Chunong Qiu , Cindy X. Qiu , Yi-Chi Shih
IPC分类号： H01L21/338
CPC分类号： H01L21/0331 , H01L29/42316
摘要： The present invention provides methods for fabricating devices with low resistance structures involving a lift-off process. A radiation blocking layer is introduced between two resist layers in order to prevent intermixing of the photoresists. Cavities suitable for the formation of low resistance T-gates or L-gates can be obtained by a first exposure, developing, selective etching of blocking layer and a second exposure and developing. In another embodiment, a low resistance gate structure with pillars to enhance mechanical stability or strength is provided.
摘要翻译：本发明提供了用于制造涉及剥离过程的具有低电阻结构的器件的方法。在两个抗蚀剂层之间引入辐射阻挡层，以防止光致抗蚀剂的混合。可以通过第一次曝光，显影，选择性蚀刻阻挡层和第二曝光和显影来获得适于形成低电阻T形栅极或L-栅极的腔体。在另一个实施例中，提供了具有柱以提高机械稳定性或强度的低电阻门结构。

32. 发明授权

US08013339B2 Thin film transistors and arrays with controllable threshold voltages and off state leakage current 有权
标题翻译：具有可控阈值电压和截止状态漏电流的薄膜晶体管和阵列
公开(公告)号：US08013339B2
公开(公告)日：2011-09-06
申请号：US12455290
申请日：2009-06-01
申请人： Ishiang Shih , Cindy X. Qiu , Chunong Qiu , Yi-Chi Shih
发明人： Ishiang Shih , Cindy X. Qiu , Chunong Qiu , Yi-Chi Shih
IPC分类号： H01L29/04
CPC分类号： H01L29/78609 , H01L29/4908
摘要： Thin film transistors and arrays having controlled threshold voltage and improved ION/IOFF ratio are provided in this invention. In one embodiment, a thin film transistor having a first gate insulator of high breakdown field with positive fixed charges and a second gate insulator with negative fixed charges is provided; said negative fixed charges substantially compensate said positive fixed charges in order to reduce threshold voltage and OFF state threshold voltage of said transistor. In another embodiment, a thin film transistor having a first passivation layer with negative fixed charges is provided, the negative charges reduce substantially unwanted negative charges in the adjacent active channel and hence reduce the OFF state current and increase ION/IOFF ratio, which in turn reduce the threshold voltage of the transistor.
摘要翻译：在本发明中提供具有受控阈值电压和改善的ION / IOFF比的薄膜晶体管和阵列。在一个实施例中，提供具有具有正固定电荷的高击穿场的第一栅极绝缘体和具有负固定电荷的第二栅极绝缘体的薄膜晶体管; 所述负固定电荷基本上补偿所述正固定电荷，以便降低所述晶体管的阈值电压和OFF状态阈值电压。在另一个实施例中，提供了具有负固定电荷的第一钝化层的薄膜晶体管，负电荷在相邻的有源沟道中减少了基本上不需要的负电荷，并因此降低了关闭状态电流并增加了ION / IOFF比，降低晶体管的阈值电压。

33. 发明授权

US09437626B2 Millimetre wave integrated circuits with thin film transistors 有权
公开(公告)号：US09437626B2
公开(公告)日：2016-09-06
申请号：US14756093
申请日：2015-08-03
申请人： Ishiang Shih , Cindy X. Qiu , Chunong Qiu , Yi-Chi Shih
发明人： Ishiang Shih , Cindy X. Qiu , Chunong Qiu , Yi-Chi Shih
IPC分类号： H01L27/13 , H01L21/84 , H01L27/12 , H01L29/423 , H01L21/02 , H01L21/4757 , H01L21/4763 , H01L49/02 , H01L29/24 , H01L29/66
CPC分类号： H01L27/1259 , H01L21/02565 , H01L21/47573 , H01L21/47635 , H01L27/1218 , H01L27/1225 , H01L27/124 , H01L27/1255 , H01L28/20 , H01L28/40 , H01L29/24 , H01L29/42384 , H01L29/66969
摘要： MMIC circuits with thin film transistors are provided without the need of grinding and etching of the substrate after the fabrication of active and passive components. Furthermore, technology for active devices based on non-toxic compound semiconductors is provided. The success in the MMIC methods and structures without substrate grinding/etching and the use of semiconductors without toxic elements for active components will reduce manufacturing time, decrease economic cost and environmental burden. MMIC structures are provided where the requirements for die or chip attachment, alignment and wire bonding are eliminated completely or minimized. This will increase the reproducibility and reduce the manufacturing time for the MMIC circuits and modules.

34. 发明申请

US20100301343A1 Metal oxynitride thin film transistors and circuits 有权
标题翻译：金属氮氧化物薄膜晶体管和电路
公开(公告)号：US20100301343A1
公开(公告)日：2010-12-02
申请号：US12455286
申请日：2009-06-01
申请人： Cindy X. Qiu , Yi-Chi Shih , Chunong Qiu , Ishiang Shih
发明人： Cindy X. Qiu , Yi-Chi Shih , Chunong Qiu , Ishiang Shih
IPC分类号： H01L29/786
CPC分类号： H01L29/7869
摘要： Thin film transistors and circuits having improved mobility and stability are disclosed in this invention to have metal oxynitrides as the active channel layers. In one embodiment, the charge carrier mobility in the thin film transistors is increased by using the metal oxynitrides as the active channel layers. In another embodiment, a thin film transistor having a p-type metal oxynitride active channel layer and a thin film transistor having an n-type metal oxynitride active channel layer are fabricated to forming a CMOS circuit. In yet another embodiment, thin film transistor circuits having metal oxynitrides as the active channel layers are provided.
摘要翻译：在本发明中公开了具有改善的迁移率和稳定性的薄膜晶体管和电路，以使金属氧氮化物作为有源沟道层。在一个实施例中，通过使用金属氧氮化物作为有源沟道层来增加薄膜晶体管中的载流子迁移率。在另一个实施例中，制造具有p型金属氧氮化物有源沟道层的薄膜晶体管和具有n型金属氮氧化物有源沟道层的薄膜晶体管，以形成CMOS电路。在又一个实施例中，提供了具有金属氧氮化物作为有源沟道层的薄膜晶体管电路。

35. 发明授权

US09048305B2 High electron mobility transistors with minimized performance effects of microcracks in the channel layers 有权
标题翻译：高电子迁移率晶体管，通道层中微裂纹的性能影响最小
公开(公告)号：US09048305B2
公开(公告)日：2015-06-02
申请号：US13998210
申请日：2013-10-15
申请人： Ishiang Shih , Chunong Qiu , Cindy X. Qiu , Yi-Chi Shih
发明人： Ishiang Shih , Chunong Qiu , Cindy X. Qiu , Yi-Chi Shih
IPC分类号： H01L29/66 , H01L29/778
CPC分类号： H01L29/7787 , H01L29/045 , H01L29/2003
摘要： In HEMTs based on III-nitrides epitaxial films or GaAs, AlGaAs and InGaAs epitaxial films, unwanted microcracks are often formed in the composite epitaxial layers in the channel region during fabrication and operation. These microcracks are caused by strain or stresses due to lattice mismatch and thermal expansion coefficient differences between materials and substrate's. Those microcracks will bring about an increase in source to drain resistance and lead to performance and reliability degradation of the HEMTs and the MMICs containing them. The present invention provides HEMTs with minimized effects of the unwanted microcracks by aligning the channel region long axis to a certain direction so that the channel region long axis forms a right angle with axis of at least one type of the microcracks.
摘要翻译：在基于III族氮化物外延膜或GaAs，AlGaAs和InGaAs外延膜的HEMT中，在制造和操作期间通常在沟道区域中的复合外延层中形成不期望的微裂纹。这些微裂纹是由于材料和衬底之间的晶格失配和热膨胀系数差异引起的应变或应力引起的。这些微裂纹将引起源极漏极阻抗的增加，并导致HEMT和包含它们的MMIC的性能和可靠性降级。本发明通过将沟道区域长轴对准某一方向，使得沟道区域长轴与至少一种类型的微裂纹的轴线成直角，从而为HEMT提供了不需要的微裂纹的最小化效果。

36. 发明申请

US20100301340A1 Thin film transistors and arrays 有权
标题翻译：薄膜晶体管和阵列
公开(公告)号：US20100301340A1
公开(公告)日：2010-12-02
申请号：US12455290
申请日：2009-06-01
申请人： Ishiang Shih , Cindy X. Qiu , Chunong Qiu , Yi-Chi Shih
发明人： Ishiang Shih , Cindy X. Qiu , Chunong Qiu , Yi-Chi Shih
IPC分类号： H01L27/088 , H01L29/786
CPC分类号： H01L29/78609 , H01L29/4908
摘要： Thin film transistors and arrays having controlled threshold voltage and improved ION/IOFF ratio are provided in this invention. In one embodiment, a thin film transistor having a first gate insulator of high breakdown field with positive fixed charges and a second gate insulator with negative fixed charges is provided; said negative fixed charges substantially compensate said positive fixed charges in order to reduce threshold voltage and OFF state threshold voltage of said transistor. In another embodiment, a thin film transistor having a first passivation layer with negative fixed charges is provided, the negative charges reduce substantially unwanted negative charges in the adjacent active channel and hence reduce the OFF state current and increase ION/IOFF ratio, which in turn reduce the threshold voltage of the transistor.
摘要翻译：在本发明中提供具有受控阈值电压和改善的ION / IOFF比的薄膜晶体管和阵列。在一个实施例中，提供具有具有正固定电荷的高击穿场的第一栅极绝缘体和具有负固定电荷的第二栅极绝缘体的薄膜晶体管; 所述负固定电荷基本上补偿所述正固定电荷，以便降低所述晶体管的阈值电压和OFF状态阈值电压。在另一个实施例中，提供了具有负固定电荷的第一钝化层的薄膜晶体管，负电荷在相邻的有源沟道中减少了基本上不需要的负电荷，并因此降低了关闭状态电流并增加了ION / IOFF比，降低晶体管的阈值电压。

37. 发明申请

US20080041436A1 Bifacial photovoltaic devices 有权
标题翻译：双面光伏器件
公开(公告)号：US20080041436A1
公开(公告)日：2008-02-21
申请号：US11504308
申请日：2006-08-16
申请人： Po K. Lau , Ishiang Shih , Cindy X. Qiu , Chunong Qiu
发明人： Po K. Lau , Ishiang Shih , Cindy X. Qiu , Chunong Qiu
IPC分类号： H02N6/00 , H01L31/00
CPC分类号： H01L31/0749 , H01L31/022425 , H01L31/02245 , H01L31/0392 , H01L31/03923 , H01L31/03925 , H01L31/18 , Y02E10/541
摘要： This invention provides a bifacial photovoltaic device to enhance the conversion of solar energy into electricity with a layer by layer additive structure. The bifacial photovoltaic device comprises an electrically conductive core electrode, a plurality of semiconductor layers covering one end region of the core electrode and at least a portion of the two faces of the core electrode, a first counter electrode, a second counter electrode, and a third counter electrode connecting the first and the second counter electrodes. The device may also comprise a light reflective layer and an anti-reflective layer. This invention also provides an array of bifacial photovoltaic cells with simple interconnection schemes.
摘要翻译：本发明提供了一种双面添加剂结构来增强太阳能转化为电能的双面光伏器件。双面光电器件包括导电芯电极，覆盖芯电极的一端区域和芯电极的两个面的至少一部分的多个半导体层，第一对电极，第二对电极和连接第一和第二对置电极的第三对置电极。该装置还可以包括光反射层和抗反射层。本发明还提供了具有简单互连方案的双面光伏电池阵列。

38. 发明授权

US07208756B2 Organic semiconductor devices having low contact resistance 失效
标题翻译：具有低接触电阻的有机半导体器件
公开(公告)号：US07208756B2
公开(公告)日：2007-04-24
申请号：US10914676
申请日：2004-08-10
申请人： Ishiang Shih , Yi Chen , Chunong Qiu , Cindy X. Qiu , Steven Shuyong Xiao
发明人： Ishiang Shih , Yi Chen , Chunong Qiu , Cindy X. Qiu , Steven Shuyong Xiao
IPC分类号： H01L29/08
CPC分类号： H01L51/105 , H01L51/0021 , H01L51/0541 , H01L51/0545 , Y02E10/549
摘要： Organic semiconductor-based devices such as thin film transistors, organic light emitting devices and solar cells have potential in low cost electronic and optoelectronic applications. The performance of these organic semiconductor-based devices is often limited by the large resistance between the organic semiconductors and counter electrodes. This invention provides device structures and methods to reduce the unwanted resistance.
摘要翻译：有机半导体器件如薄膜晶体管，有机发光器件和太阳能电池具有低成本电子和光电子应用的潜力。这些基于有机半导体的器件的性能通常受到有机半导体和对电极之间的大电阻的限制。本发明提供了减少不需要的电阻的器件结构和方法。

39. 发明授权

US07915517B2 Bifacial photovoltaic devices 有权
标题翻译：双面光伏器件
公开(公告)号：US07915517B2
公开(公告)日：2011-03-29
申请号：US11504308
申请日：2006-08-16
申请人： Po K. Lau , Ishiang Shih , Cindy X. Qiu , Chunong Qiu
发明人： Po K. Lau , Ishiang Shih , Cindy X. Qiu , Chunong Qiu
IPC分类号： H01L31/00
CPC分类号： H01L31/0749 , H01L31/022425 , H01L31/02245 , H01L31/0392 , H01L31/03923 , H01L31/03925 , H01L31/18 , Y02E10/541
摘要： This invention provides a bifacial photovoltaic device to enhance the conversion of solar energy into electricity with a layer by layer additive structure. The bifacial photovoltaic device comprises an electrically conductive core electrode, a plurality of semiconductor layers covering one end region of the core electrode and at least a portion of the two faces of the core electrode, a first counter electrode, a second counter electrode, and a third counter electrode connecting the first and the second counter electrodes. The device may also comprise a light reflective layer and an anti-reflective layer. This invention also provides an array of bifacial photovoltaic cells with simple interconnection schemes.
摘要翻译：本发明提供了一种双面添加剂结构来增强太阳能转化为电能的双面光伏器件。双面光电器件包括导电芯电极，覆盖芯电极的一端区域和芯电极的两个面的至少一部分的多个半导体层，第一对电极，第二对电极和连接第一和第二对置电极的第三对置电极。该装置还可以包括光反射层和抗反射层。本发明还提供了具有简单互连方案的双面光伏电池阵列。

40. 发明授权

US09276131B2 Stress release structures for metal electrodes of semiconductor devices 有权
标题翻译：半导体器件金属电极的应力释放结构
公开(公告)号：US09276131B2
公开(公告)日：2016-03-01
申请号：US13986500
申请日：2013-05-10
申请人： Ishiang Shih , Cindy Xing Qiu , Chunong Qiu , Yi-Chi Shih
发明人： Ishiang Shih , Cindy Xing Qiu , Chunong Qiu , Yi-Chi Shih
IPC分类号： H01L29/66 , H01L29/788 , H01L29/737
CPC分类号： H01L29/788 , H01L29/66234 , H01L29/66242 , H01L29/7371 , H01L29/778 , H01L2924/1305 , H01L2924/13051
摘要： This invention teaches stress release metal electrodes for gate, drain and source in a field effect transistor and stress release metal electrodes for emitter, base and collector in a bipolar transistor. Due to the large difference in the thermal expansion coefficients between semiconductor materials and metal electrodes, significant strain and stresses can be induced in the devices during the fabrication and operation. The present invention provides metal electrode with stress release structures to reduce the strain and stresses in these devices.
摘要翻译：本发明教导了在场效应晶体管中用于栅极，漏极和源极的应力释放金属电极，以及在双极晶体管中用于发射极，基极和集电极的应力释放金属电极。由于半导体材料和金属电极之间的热膨胀系数的差异很大，在制造和操作期间可能会在器件中引起显着的应变和应力。本发明提供具有应力释放结构的金属电极，以减少这些装置中的应变和应力。

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