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31. 发明申请

US20090194845A1 SEMICONDUCTOR DEVICE COMPRISING A CAPACITOR IN THE METALLIZATION SYSTEM AND A METHOD OF FORMING THE CAPACITOR 有权
标题翻译：在金属化系统中包含电容器的半导体器件和形成电容器的方法
公开(公告)号：US20090194845A1
公开(公告)日：2009-08-06
申请号：US12173268
申请日：2008-07-15
申请人： Thomas Werner , Frank Feustel , Kai Frohberg
发明人： Thomas Werner , Frank Feustel , Kai Frohberg
IPC分类号： H01L21/768 , H01L21/02 , H01L29/92
CPC分类号： H01L27/10852 , H01L28/40
摘要： By forming metal capacitors in the metallization structures of semiconductor devices, complex manufacturing sequences in the device level may be avoided. The process of manufacturing the metal capacitors may be performed on the basis of well-established patterning regimes of modern metallization systems by using appropriately selected etch stop materials, which may enable a high degree of compatibility for forming via openings in a metallization layer while providing a capacitor dielectric of a desired high dielectric constant in the capacitor.
摘要翻译：通过在半导体器件的金属化结构中形成金属电容器，可以避免器件级的复杂制造顺序。制造金属电容器的过程可以通过使用适当选择的蚀刻停止材料，通过使用适当选择的蚀刻停止材料，基于现代金属化系统的良好建立的图案化方案来进行，这可以使得能够在金属化层中形成通孔以高度的相容性同时提供金属化层电容器中所需的高介电常数的电容器电介质。

32. 发明申请

US20090140348A1 METHOD AND A SEMICONDUCTOR DEVICE COMPRISING A PROTECTION LAYER FOR REDUCING STRESS RELAXATION IN A DUAL STRESS LINER APPROACH 有权
标题翻译：方法和包含保护层的半导体器件，用于降低双应力线路方法中的应力松弛
公开(公告)号：US20090140348A1
公开(公告)日：2009-06-04
申请号：US12131429
申请日：2008-06-02
申请人： Kai Frohberg , Frank Feustel , Thomas Werner , Uwe Griebenow
发明人： Kai Frohberg , Frank Feustel , Thomas Werner , Uwe Griebenow
IPC分类号： H01L27/092 , H01L21/311
CPC分类号： H01L21/823425 , H01L21/823412 , H01L21/823807 , H01L29/665 , H01L29/7843
摘要： By providing a protection layer for suppressing stress relaxation in a tensile-stressed dielectric material during a dual stress liner approach, performance of N-channel transistors may be increased, while nevertheless maintaining a high degree of compatibility with conventional dual stress liner approaches.
摘要翻译：通过在双重应力衬垫法期间提供用于抑制拉应力电介质材料中的应力松弛的保护层，可以增加N沟道晶体管的性能，同时保持与常规双重应力衬垫方法的高度兼容性。

33. 发明申请

US20080195576A1 Method, and Computer Based-System and Virtual Asset Register 审中-公开
标题翻译：方法和基于计算机的系统和虚拟资产注册
公开(公告)号：US20080195576A1
公开(公告)日：2008-08-14
申请号：US10590028
申请日：2005-02-18
申请人： Gorm Sande , Jan Bugge , Lars Gundersen , Svein Vatland , Tormod Lund , Erik Svensson , Danny Julian , Claus Vetter , Thomas Werner
发明人： Gorm Sande , Jan Bugge , Lars Gundersen , Svein Vatland , Tormod Lund , Erik Svensson , Danny Julian , Claus Vetter , Thomas Werner
IPC分类号： G06F7/06 , G06F12/00 , G06F17/30
CPC分类号： G06Q10/06 , G06F16/256 , G06F16/84 , Y02P90/86
摘要： A method and computer-based system for retrieving, accessing and storing data otherwise stored in a plurality of IT systems arranged for operating a part of one or more electrical power networks. The method and computer-based system provide integration of otherwise separate systems such as GIS, SCADA, ERP and/or CMMS. The integration includes an XML/CIM layer for data exchange and a virtual asset register containing references to objects representing assets in the power networks. A human-machine interface and a computer program for carrying out the method.
摘要翻译：一种用于检索，访问和存储否则存储在被布置用于操作一个或多个电力网络的一部分的多个IT系统中的数据的方法和基于计算机的系统。该方法和基于计算机的系统提供了独立系统（如GIS，SCADA，ERP和/或CMMS）的集成。集成包括用于数据交换的XML / CIM层和包含对表示电力网络资产的对象的引用的虚拟资产寄存器。一种用于执行该方法的人机界面和计算机程序。

34. 发明申请

US20080131796A1 METHOD AND TEST STRUCTURE FOR ESTIMATING FOCUS SETTINGS IN A LITHOGRAPHY PROCESS BASED ON CD MEASUREMENTS 有权
标题翻译：基于光盘测量的光刻过程估计聚焦设置的方法和测试结构
公开(公告)号：US20080131796A1
公开(公告)日：2008-06-05
申请号：US11755245
申请日：2007-05-30
申请人： Thomas Werner , Frank Feustel , Kai Frohberg
发明人： Thomas Werner , Frank Feustel , Kai Frohberg
IPC分类号： H01L23/58 , G03F7/207
CPC分类号： H01L22/20 , G03F7/70625 , G03F7/70641 , H01L22/12
摘要： By encoding process-related non-uniformities, such as different height levels, which may be caused by CMP or other processes during the fabrication of complex device levels, such as metallization structures, respective focus parameter settings may be efficiently evaluated on the basis of well-established CD measurement techniques.
摘要翻译：通过编码过程相关的不均匀性，例如不同的高度级别，其可以由制造复杂器件级别（例如金属化结构）期间的CMP或其它工艺引起，可以基于阱有效地评估各个焦点参数设置 - 建立CD测量技术。

35. 发明申请

US20080081481A1 METHOD FOR REDUCING RESIST POISONING DURING PATTERNING OF STRESSED NITROGEN-CONTAINING LAYERS IN A SEMICONDUCTOR DEVICE 有权
标题翻译：用于在半导体器件中压制含氮化物层的方式减少耐药性的方法
公开(公告)号：US20080081481A1
公开(公告)日：2008-04-03
申请号：US11743502
申请日：2007-05-02
申请人： Kai Frohberg , Ralf Richter , Thomas Werner
发明人： Kai Frohberg , Ralf Richter , Thomas Werner
IPC分类号： H01L21/311
CPC分类号： H01L21/823807 , H01L21/0223 , H01L21/02238 , H01L21/02252 , H01L21/31662 , H01L29/665 , H01L29/6659 , H01L29/7843 , Y02P80/30
摘要： By providing a silicon cap layer on a compressive silicon nitride layer, the diffusion of nitrogen into sensitive resist material may be efficiently reduced, while the silicon may be converted into a highly compressive silicon dioxide in a later manufacturing stage. Consequently, yield loss due to contact failures during the formation of semiconductor devices requiring differently stressed silicon nitride layers may be reduced.
摘要翻译：通过在压缩氮化硅层上设置硅覆盖层，可以有效地降低氮气到敏感抗蚀剂材料中的扩散，同时可以在随后的制造阶段将硅转化为高度压缩的二氧化硅。因此，可能会降低在形成需要不同应力的氮化硅层的半导体器件期间由于接触故障导致的屈服损失。

36. 发明授权

US07030044B2 Method of forming a cap layer having anti-reflective characteristics on top of a low-k dielectric 失效
标题翻译：在低k电介质的顶部形成具有抗反射特性的盖层的方法
公开(公告)号：US07030044B2
公开(公告)日：2006-04-18
申请号：US10463910
申请日：2003-06-16
申请人： Hartmut Ruelke , Joerg Hohage , Thomas Werner , Frank Mauersberger
发明人： Hartmut Ruelke , Joerg Hohage , Thomas Werner , Frank Mauersberger
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/0214 , H01L21/02164 , H01L21/022 , H01L21/02211 , H01L21/02274 , H01L21/0276 , H01L21/3143 , H01L21/3144 , H01L21/3145 , H01L21/31612 , H01L21/3212 , H01L21/76826 , H01L21/76829 , H01L21/7684 , H01L21/76877 , Y10S438/952
摘要： A method of forming a multi-layer stack over a low-k dielectric layer is disclosed, wherein the multi-layer stack provides an improved anti-reflective effect and an enhanced protection of the underlying low-k dielectric material during the chemical mechanical polishing process. The multi-layer stack includes silicon dioxide based sub-layers, which may be formed in a highly efficient, non-expensive plasma enhanced deposition method, wherein the optical characteristics may be adjusted by varying a ratio of silane and nitrogen oxide during the deposition.
摘要翻译：公开了一种在低k电介质层上形成多层堆叠的方法，其中多层堆叠在化学机械抛光工艺期间提供改进的抗反射效应和增强的底层低k电介质材料的保护。多层堆叠包括可以以高效，非昂贵的等离子体增强沉积方法形成的基于二氧化硅的子层，其中可以通过在沉积期间改变硅烷和氮氧化物的比例来调节光学特性。

37. 发明授权

US07010618B1 Network architecture for communication networks or data networks 有权
标题翻译：通信网络或数据网络的网络架构
公开(公告)号：US07010618B1
公开(公告)日：2006-03-07
申请号：US09807889
申请日：1999-10-05
申请人： Umesh Bhavsar , Jan Hamann , Ralf Rieken , Thomas Werner
发明人： Umesh Bhavsar , Jan Hamann , Ralf Rieken , Thomas Werner
IPC分类号： G06F15/16
CPC分类号： H04Q3/0045 , H04L12/6418 , H04Q3/0054
摘要： A layer of network elements is provided between already existing physical networks and service providers or users. The network elements communicate via interfaces not only with each other, but also with the physical networks which are connected to them. This layer, which is implemented by network elements distributed in the network, enables the network user to access the existing network resources available in the physical, subjacent networks. This enables all available basic and value-added services to be used. The required and generated data are collected separately according to users or service providers in the relevant physical networks, and are managed and made available for further processing.
摘要翻译：已经存在的物理网络和服务提供商或用户之间提供了一层网络元素。网络元件不仅通过接口彼此通信，而且与连接到它们的物理网络进行通信。该网络由分布在网络中的网络元件实现，使得网络用户能够访问物理下层网络中可用的现有网络资源。这使得可以使用所有可用的基本和增值服务。所需和生成的数据根据相关物理网络中的用户或服务提供商单独收集，并被管理并可用于进一步处理。

38. 发明授权

US06964874B2 Void formation monitoring in a damascene process 失效
标题翻译：大马士革过程中的空洞形成监测
公开(公告)号：US06964874B2
公开(公告)日：2005-11-15
申请号：US10259037
申请日：2002-09-27
申请人： Thomas Werner , Peter Hübler , Frank Koschinsky
发明人： Thomas Werner , Peter Hübler , Frank Koschinsky
IPC分类号： H01L21/288 , H01L21/768 , H01L23/544 , H01L21/66
CPC分类号： H01L22/34 , H01L21/2885 , H01L21/76807 , H01L21/76877 , H01L2924/0002 , H01L2924/00
摘要： The invention provides a technique of monitoring the void formation in a damascene interconnection process. According to the invention, a test structure is provided that includes at least two damascene structures that have at least one different cross-sectional geometric parameter. To monitor the void formation, the test structure is cut to expose a cross-sectional view to the damascene structures. The cross-sectional view is then inspected and the void formation is investigated in each of the damascene structures. The invention is particularly applicable to multi-level copper-based dual-damascene interconnection processes to monitor the voiding at the interface between barrier layers and bottom metal trenches. The invention allows monitoring of the void formation by locating only one structure on the chip and performing only one cut.
摘要翻译：本发明提供了一种在大马士革互连过程中监测空隙形成的技术。根据本发明，提供一种测试结构，其包括具有至少一个不同横截面几何参数的至少两个镶嵌结构。为了监测空隙形成，切割测试结构以露出镶嵌结构的横截面视图。然后检查横截面图，并在每个镶嵌结构中研究空隙形成。本发明特别适用于多级铜基双镶嵌互连工艺，以监测阻挡层和底部金属沟槽之间界面处的空隙。本发明允许通过仅在芯片上定位一个结构并且仅执行一个切割来监视空隙形成。

39. 发明授权

US06705025B2 Bottom element for a device for treating particulate material 有权
标题翻译：用于处理颗粒材料的装置的底部元件
公开(公告)号：US06705025B2
公开(公告)日：2004-03-16
申请号：US10256536
申请日：2002-09-27
申请人： Thomas Werner , Martin Gross
发明人： Thomas Werner , Martin Gross
IPC分类号： F26B1700
CPC分类号： F26B3/082 , B01J2/16 , B01J8/44
摘要： A bottom element for a device for treating particulate has a two-dimensional body having numerous apertures. Means for imposing to a treatment medium passing said bottom are provided. Said bottom being designed as blade-shaped body, said apertures being designed as slots, said slots being generated by a removal of material from said plate-shaped body. Said slots having side walls sloping towards a plane of said body. For facilitating a cleaning of said bottom said side walls of said slots further consecutively tapers to a direction of a side of said bottom a particulate material rests.
摘要翻译：用于处理颗粒的装置的底部元件具有多个孔的二维体。提供用于施加到通过所述底部的处理介质的装置。所述底部被设计成叶片形体，所述孔被设计成槽，所述槽是通过从所述板状体去除材料产生的。所述狭槽具有朝向所述主体的平面倾斜的侧壁。为了便于所述底部的清洁，所述槽的所述侧壁进一步连续地向所述底部的侧面的方向渐缩，颗粒材料搁置。

40. 发明授权

US5795173A Plug connector 失效
标题翻译：插头连接器
公开(公告)号：US5795173A
公开(公告)日：1998-08-18
申请号：US721473
申请日：1996-09-27
申请人： Thomas Werner , Markus Mornhinweg , Andreas Weber , Burkhard Lutterbeck
发明人： Thomas Werner , Markus Mornhinweg , Andreas Weber , Burkhard Lutterbeck
IPC分类号： H01R13/502 , H01R13/52 , H01R13/621 , H01R13/625 , H01R13/639 , H01R13/66
CPC分类号： H01R13/625 , H01R13/5205
摘要： A plug connector is provided, in particular for the connection of measuring instruments, which is to be connected to a plug having three flat elongated contact pins, a flat elongated protective contact pin and a threaded hole arranged in its center. The plug connector has a low maximum cross-sectional area and a high tightness. The plug connector has a housing (1) partly forming a cone (11), a hollow cylinder (12) which is molded onto the cone (11) on the side facing away from the plug and has an external thread (121), a nut (5) screwed onto the hollow cylinder (12), and a sealing element (4) which completely fills the hollow cylinder (12) and the nut (5). A four-way cable (3) penetrates the nut (5) and the sealing element (4) in the axial direction. A groove (14) is arranged on the side of the housing (1) facing toward the plug to accommodate a seal (6) and a ring (15) is molded on the cone (11) on the side facing toward the plug and encloses the plug coaxially at the end. A contact insert (2) is arranged in the housing (1), in which four flat contact clamps, to which the ways of the cable (3) are connected, are arranged in a countersunk fashion. The contact insert has a central axial hole (27) in which a screw (7) for securing the plug connector on the plug is captively arranged, and which is fixed nonrotably in the housing (1) by a bayonet closure and a locking tab (17) arranged in the housing (1) and can be detached only by a tool.
摘要翻译：提供了插头连接器，特别是用于连接测量仪器的连接器，该测量仪器将连接到具有三个扁平细长触针的插头，平的细长保护触针和布置在其中心的螺纹孔。插头连接器具有低的最大横截面积和高密封性。插头连接器具有部分地形成锥体（11）的壳体（1），在远离插头的一侧模制在锥体（11）上的中空圆柱体（12），并具有外螺纹（121），螺母（5）拧入中空圆筒（12）上，密封元件（4）完全填充中空圆筒（12）和螺母（5）。四通电缆（3）沿轴向穿透螺母（5）和密封元件（4）。在壳体（1）的面向插头的侧面上布置有凹槽（14）以容纳密封件（6），并且在锥体（11）上在朝向插塞的一侧上模制环（15），并且包围插头同轴在最后。接触插入件（2）布置在壳体（1）中，其中连接有电缆（3）的方式的四个平坦接触夹具以沉没方式布置。接触插入件具有中心轴向孔（27），其中用于将插头连接器固定在插头上的螺钉（7）被固定地布置，并且通过卡口闭合件和锁定突出部（1）固定在壳体（1）中， 17）布置在壳体（1）中，并且可以仅由工具分离。

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