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    • 33. 发明申请
    • METHOD AND APPARATUS FOR TESTING LIGHT-EMITTING DEVICE
    • 用于测试发光装置的方法和装置
    • US20130201483A1
    • 2013-08-08
    • US13365820
    • 2012-02-03
    • Chia-Liang HsuChih-Chiang Lu
    • Chia-Liang HsuChih-Chiang Lu
    • G01J1/04G01J1/42
    • G01R31/308G01J1/42G01J2001/4252G01R31/2635G01R31/44
    • Disclosed is a method for testing a light-emitting device comprising the steps of: providing a light-emitting device comprising a plurality of light-emitting diodes; driving the plurality of the light-emitting diodes with current; generating an image of the light-emitting device; and determining a luminous intensity of each of the light-emitting diodes with the image. An apparatus for testing a light-emitting device comprising a plurality of light-emitting diodes is also disclosed. The apparatus comprises: a current source to provide a current to drive the plurality of the light-emitting diodes; an image receiving device for receiving an image of the light-emitting device in the driven state; and a processing unit for determining a luminous intensity of each of the light-emitting diodes with the image.
    • 公开了一种用于测试发光器件的方法,包括以下步骤:提供包括多个发光二极管的发光器件; 用电流驱动多个发光二极管; 产生发光装置的图像; 以及用图像确定每个发光二极管的发光强度。 还公开了一种用于测试包括多个发光二极管的发光器件的装置。 该装置包括:电流源,用于提供驱动多个发光二极管的电流; 图像接收装置,用于接收驱动状态下的发光装置的图像; 以及处理单元,用于利用图像确定每个发光二极管的发光强度。
    • 35. 发明申请
    • LIGHT-EMITTING DEVICE PACKAGE
    • 发光装置包装
    • US20130003344A1
    • 2013-01-03
    • US13614144
    • 2012-09-13
    • Chia-Liang Hsu
    • Chia-Liang Hsu
    • H01L33/60G09F13/04
    • H01L25/0753G02B6/0025G02B6/0031G02B6/0073H01L33/48H01L33/486H01L33/507H01L33/58H01L33/60H01L33/62H01L2224/48091H01L2224/73265H01L2924/00014
    • A light-emitting diode device is disclosed. The light-emitting diode device includes a carrier including a platform; a transparent substrate formed on the platform including a first surface; a multi-LED structure including a first light-emitting structure formed on the first surface, the first light-emitting structure including a first first-type semiconductor layer, a first second-type semiconductor layer, and a first active layer formed between the first first-type semiconductor layer and the first second-type semiconductor layer; a second light-emitting structure formed on the first surface, the second light-emitting structure including a second first-type semiconductor layer, a second second-type semiconductor layer, and a second active layer formed between the second first-type semiconductor layer and the second second-type semiconductor layer; and a connecting layer formed between the first light-emitting structure and the second light-emitting structure; wherein an angle between the first surface of the transparent substrate and the platform is not equal to zero.
    • 公开了一种发光二极管器件。 发光二极管装置包括:载体,包括平台; 形成在所述平台上的透明基板,包括第一表面; 包括形成在第一表面上的第一发光结构的多LED结构,所述第一发光结构包括第一第一类型半导体层,第一第二类型半导体层和形成在第一表面之间的第一有源层 第一类型半导体层和第一第二类型半导体层; 第二发光结构,形成在第一表面上,第二发光结构包括第二第一类型半导体层,第二第二类型半导体层和形成在第二第一类型半导体层和第二有源层之间的第二有源层, 所述第二二次半导体层; 以及形成在所述第一发光结构和所述第二发光结构之间的连接层; 其中所述透明基板的第一表面和所述平台之间的角度不等于零。
    • 36. 发明申请
    • OPTOELECTRONIC DEVICE AND THE MANUFACTURING METHOD THEREOF
    • 光电器件及其制造方法
    • US20120256164A1
    • 2012-10-11
    • US13528059
    • 2012-06-20
    • Shih-I ChenChia-Liang HsuTzu-Chieh HsuChun-Yi WuChien-Fu Huang
    • Shih-I ChenChia-Liang HsuTzu-Chieh HsuChun-Yi WuChien-Fu Huang
    • H01L33/06
    • H01L33/46H01L33/22H01L33/42H01L33/44
    • An optoelectronic device has a substrate and a first window layer on the substrate with a first sheet resistance, a first thickness, and a first impurity concentration. A second window layer has a second sheet resistance, a second thickness, and a second impurity concentration. A semiconductor system is between the first window layer and the second window layer. The second window layer has a semiconductor material different from the semiconductor system, and the second sheet resistance is greater than the first sheet resistance. A method for manufacturing is provided, having the steps of providing a substrate, forming a semiconductor system on the substrate, and forming a window layer on the semiconductor system. The window layer has a semiconductor material different from the semiconductor system. Selectively removing the window layer forms a width difference greater than 1 micron between the window layer and semiconductor system.
    • 光电器件具有衬底和衬底上的第一窗口层,具有第一薄层电阻,第一厚度和第一杂质浓度。 第二窗口层具有第二薄层电阻,第二厚度和第二杂质浓度。 半导体系统在第一窗口层和第二窗口层之间。 第二窗口层具有与半导体系统不同的半导体材料,第二薄层电阻大于第一薄层电阻。 提供一种制造方法,其具有以下步骤:提供衬底,在衬底上形成半导体系统,并在半导体系统上形成窗口层。 窗口层具有与半导体系统不同的半导体材料。 选择性地去除窗口层在窗口层和半导体系统之间形成大于1微米的宽度差。