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31. 发明授权

US5985162A Method for forming soft adjacent layer (SAL) magnetoresistive (MR) sensor element with electrically insulated soft adjacent layer (SAL) 失效
标题翻译：用电绝缘软相邻层（SAL）形成软相邻层（SAL）磁阻（MR）传感器元件的方法
公开(公告)号：US5985162A
公开(公告)日：1999-11-16
申请号：US810059
申请日：1997-03-05
申请人： Cherng-Chyi Han , Mao-Min Chen , Kochan Ju
发明人： Cherng-Chyi Han , Mao-Min Chen , Kochan Ju
IPC分类号： G01R33/09 , G11B5/31 , G11B5/39 , H01L43/08 , H01L43/12 , B44C1/22
CPC分类号： B82Y25/00 , G01R33/093 , G11B5/3903 , G11B5/3932 , G11B5/3967 , H01L43/12 , G11B5/313 , G11B5/3163
摘要： A soft adjacent layer (SAL) magnetoresistive (MR) sensor element and a method for fabricating the soft adjacent layer (SAL) magnetoresistive (MR) sensor element. To practice the method, there is first provided a substrate. There is formed over the substrate a dielectric layer which has a first surface of the dielectric layer and a second surface of the dielectric layer opposite the first surface of the dielectric layer. There is also formed over the substrate a magnetoresistive (MR) layer in contact with the first surface of the dielectric layer. Similarly, there is also formed over the substrate a soft adjacent layer (SAL) in contact with the second surface of the blanket dielectric layer, where the magnetoresistive (MR) layer, the soft adjacent layer (SAL) and the dielectric layer are planar and preferably at least substantially co-extensive. The invention contemplates the soft adjacent layer (SAL) magnetoresistive (MR) sensor element formed through the method of the invention.
摘要翻译：软相邻层（SAL）磁阻（MR）传感器元件和用于制造软相邻层（SAL）磁阻（MR）传感器元件的方法。为了实践该方法，首先提供了一种衬底。在衬底上形成介电层，其具有电介质层的第一表面和与电介质层的第一表面相对的电介质层的第二表面。还在衬底上形成与电介质层的第一表面接触的磁阻（MR）层。类似地，还在衬底上形成与橡皮布介电层的第二表面接触的软相邻层（SAL），其中磁阻（MR）层，软相邻层（SAL）和电介质层是平面的，优选至少基本上共同扩展。本发明设想通过本发明的方法形成的软相邻层（SAL）磁阻（MR）传感器元件。

32. 发明授权

US07251102B2 ABS through aggressive stitching 失效
标题翻译： ABS通过积极的拼接
公开(公告)号：US07251102B2
公开(公告)日：2007-07-31
申请号：US10782496
申请日：2004-02-19
申请人： Cherng-Chyi Han , Mao-Min Chen , Laurie Lauchlan , Lei Zhang
发明人： Cherng-Chyi Han , Mao-Min Chen , Laurie Lauchlan , Lei Zhang
IPC分类号： G11B5/127
CPC分类号： G11B5/33 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/4906 , Y10T29/49062 , Y10T29/49064
摘要： Aggressive (i.e. tight tolerance) stitching offers several advantages for magnetic write heads but at the cost of some losses during pole trimming. This problem has been overcome by replacing the alumina filler layer, that is used to protect the stitched pole during trimming, with a layer of electro-plated material. Because of the superior step coverage associated with the plating method of deposition, pole trimming can then proceed without the introduction of stresses to the stitched pole while it is being trimmed.
摘要翻译：积极（即紧公差）缝合为磁性写入头提供了几个优点，但是在极修整期间以一些损失为代价。通过用一层电镀材料代替在修整期间用于保护缝合极的氧化铝填料层已经克服了这个问题。由于与沉积电镀方法相关的优越的台阶覆盖，因此可以进行极细修剪，而不会在缝合极被修剪时引入应力。

33. 发明授权

US07196876B2 Method to make abutted junction GMR head without lead shunting 失效
标题翻译：在没有引线分流的情况下制造对接接头GMR头的方法
公开(公告)号：US07196876B2
公开(公告)日：2007-03-27
申请号：US10236359
申请日：2002-09-06
申请人： Cherng-Chyi Han , Mao-Min Chen , Pokang Wang
发明人： Cherng-Chyi Han , Mao-Min Chen , Pokang Wang
IPC分类号： G11B5/39 , G11B5/33 , G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3116 , G11B5/313 , G11B5/3163 , G11B5/3903 , Y10T29/49044 , Y10T29/49052
摘要： A method for forming an abutted junction GMR bottom spin valve sensor in which the free layer has a maximum effective length due to the elimination or minimization of bias layer and conducting lead layer overspreading onto the sensor element and the consequent reduction of current shunting. The overspreading is eliminated by forming a thin dielectric layer on the upper surface of the sensor element. When the biasing and conducting leads are formed on the abutted junction, they overspread onto this layer and the overspread can be removed by an ion-milling process during which the dielectric layer protects the sensor.
摘要翻译：用于形成邻接结GMR底部自旋阀传感器的方法，其中自由层由于偏置层的消除或最小化而导致最大有效长度，并且导致引线层过度传播到传感器元件上，从而减少了电流分流。通过在传感器元件的上表面上形成薄的电介质层来消除超扩展。当偏置和导电引线形成在邻接接头上时，它们被扩展到该层上，并且可以通过离子铣削工艺去除超扩展，其中电介质层保护传感器。

34. 发明授权

US07106558B2 Biased spin valve head with canted adjacent layer and current channeling layer 失效
公开(公告)号：US07106558B2
公开(公告)日：2006-09-12
申请号：US10868713
申请日：2004-06-15
申请人： Kochan Ju , You Feng Zheng , Mao-Min Chen , Cherng-Chyi Han , Charles Lin
发明人： Kochan Ju , You Feng Zheng , Mao-Min Chen , Cherng-Chyi Han , Charles Lin
IPC分类号： G11B5/33
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/313 , G11B5/3163 , G11B5/3903 , G11B2005/3996
摘要： A magnetic read head with reduced side reading characteristics is described. This design combines use of a current channeling layer (CCL) with stabilizing longitudinal bias layers whose magnetization direction is canted relative to that of the free layer easy axis and that of the pinned layer (of the GMR). This provides several advantages: First, the canting of the free layer at the side region results in a reduction of side reading by reducing magnetic sensitivity in that region. Second, the CCL leads to a narrow current flow profile at the side region, therefore producing a narrow track width definition. A process for making this device is described. Said process allows some of the requirements for interface cleaning associated with prior art processes to be relaxed.

35. 发明授权

US06826015B2 Flux concentrating stitched write head 失效
标题翻译：助焊剂集中缝合写头
公开(公告)号：US06826015B2
公开(公告)日：2004-11-30
申请号：US10453048
申请日：2003-06-03
申请人： Mao-Min Chen , Pokang Wang , Cherng-Chyi Han
发明人： Mao-Min Chen , Pokang Wang , Cherng-Chyi Han
IPC分类号： G11B531
CPC分类号： G11B5/3116 , G11B5/313 , G11B5/3146 , G11B5/3163 , Y10T29/49032 , Y10T29/49041 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A flux concentrating stitched write head design for high data rate applications is provided. The flux concentration is achieved by means of a non-magnetic step embedded into a portion of the lower magnetic pole of the write head, just beneath the write gap layer. The design permits extremely short throat heights, which will be required by future high data rate applications.
摘要翻译：提供了一种用于高数据速率应用的通量集中缝合写头设计。磁通量集中通过嵌入写入头下部磁极的一部分的非磁性步骤来实现，正好位于写入间隙层的正下方。该设计允许极短的喉部高度，这将是未来高数据速率应用所需要的。

36. 发明授权

US06469875B1 Stitched write head design having a sunken shared pole 失效
标题翻译：拼接写头设计有一个凹陷的共享极点
公开(公告)号：US06469875B1
公开(公告)日：2002-10-22
申请号：US09525672
申请日：2000-03-15
申请人： Mao-Min Chen , Po-Kang Wang , Cherng-Chyi Han
发明人： Mao-Min Chen , Po-Kang Wang , Cherng-Chyi Han
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3163 , G11B5/3903 , G11B5/3967 , G11B2005/3996 , Y10T29/49048
摘要： A structure and a method for a stitched write head having a sunken share pole. The method includes forming a bottom coil dielectric layer over the first half shared pole. Coils are formed over the bottom coil dielectric layer. Next, second half shared poles (P1) are formed over the first half shared pole (S2). We form a top coil dielectric layer over the structure. In a key step, we chemical-mechanical polish the top coil dielectric layer. A write gap layer (WG) is formed over the front second half shared pole and the top coil dielectric layer over the coils. An upper pole (P3) and hard mask are formed over the write gap layer. We etch the write gap layer and the second half shared pole (P1) using the upper pole as an etch mask to remove a portion of the second half shared pole (P1) adjacent to the write gap layer thereby forming a partially trimmed pole.
摘要翻译：一种具有凹陷的共享极的缝合写头的结构和方法。该方法包括在第一半共享极上形成底部线圈电介质层。线圈形成在底部线圈电介质层上。接下来，在第一半共享极（S2）上形成第二半共享极（P1）。我们在结构上形成顶层线圈介电层。在关键步骤中，我们化学机械抛光顶层线圈介电层。写入间隙层（WG）形成在线圈上的前第二半共享极和顶部线圈电介质层上。在写间隙层上形成上极（P3）和硬掩模。我们使用上极蚀刻写间隙层和第二半共享极（P1）作为蚀刻掩模，以去除与写间隙层相邻的第二半共享极（P1）的一部分，从而形成部分修整的极。

37. 发明授权

US06415500B1 Method to prevent electrostatic discharge for MR/GMR wafer fabrication 有权
标题翻译：防止MR / GMR晶片制造的静电放电的方法
公开(公告)号：US06415500B1
公开(公告)日：2002-07-09
申请号：US09482050
申请日：2000-01-13
申请人： Cherng-Chyi Han , Mao-Min Chen , Jen-Wei Koo , Rodney Lee , Li-Yan Zhu , Jei-Wei Chang
发明人： Cherng-Chyi Han , Mao-Min Chen , Jen-Wei Koo , Rodney Lee , Li-Yan Zhu , Jei-Wei Chang
IPC分类号： G11B5127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3163 , G11B5/3173 , G11B5/3903 , G11B5/40 , G11B2005/3996 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49156 , Y10T29/49165
摘要： Methods and structures are disclosed which avoid electrostatic charge build up and subsequent electrostatic discharge (ESD) during the wafer fabrication process of magnetoresistive (MR) or giant magnetoresistive (GMR) read/write heads of magnetic disk drives. This is achieved by designing the wafer layout and process so that the MR/GMR sensor film is shorted to the magnetic shields of the head through shorting paths so that there is an equal potential between MR/GMR sensor film and magnetic shields during the entire fabrication process.
摘要翻译：公开了在磁阻（MR）或巨磁阻（GMR）读/磁头磁盘驱动器的晶片制造过程中避免静电电荷累积和随后的静电放电（ESD）的方法和结构。这通过设计晶片布局和工艺来实现，使得MR / GMR传感器膜通过短路路径短路到磁头的磁屏蔽，使得在整个制造期间MR / GMR传感器膜和磁屏蔽之间具有相等的电位处理。

38. 发明授权

US06383574B1 Ion implantation method for fabricating magnetoresistive (MR) sensor element 失效
标题翻译：用于制造磁阻（MR）传感器元件的离子注入方法
公开(公告)号：US06383574B1
公开(公告)日：2002-05-07
申请号：US09360118
申请日：1999-07-23
申请人： Cherng-Chyi Han , Rong-Fu Xiao , Mao-Min Chen , Po-Kang Wang
发明人： Cherng-Chyi Han , Rong-Fu Xiao , Mao-Min Chen , Po-Kang Wang
IPC分类号： B05D500
CPC分类号： H01L43/12 , B82Y10/00 , B82Y25/00 , B82Y40/00 , C23C14/48 , G11B5/3163 , H01F41/302
摘要： A method for forming a magnetoresistive (MR) layer first employs a substrate over which is formed a magnetoresistive (MR) layer formed of a magnetoresistive (MR) material. There is then ion implanted selectively, while employing an ion implant method, the magnetoresistive (MR) layer to form: (1) an ion implanted portion of the magnetoresistive (MR) layer formed of an ion implanted magnetoresistive (MR) material; and (2) an adjoining non ion implanted portion of the magnetoresistive (MR) layer formed of the magnetoresistive (MR) material, where the ion implanted magnetoresistive (MR) material is a non magnetoresistive (MR) material. The method may be employed for forming within magnetoresistive (MR) sensor elements magnetoresistive (MR) layers with enhanced dimensional uniformity, and in particular enhanced overlay dimensional uniformity.
摘要翻译：形成磁阻（MR）层的方法首先采用形成由磁阻（MR）材料形成的磁阻（MR）层的衬底。然后选择性地离子注入，同时采用离子注入法，磁阻（MR）层形成：（1）由离子注入的磁阻（MR）材料形成的磁阻（MR）层的离子注入部分; 和（2）由磁阻（MR）材料形成的磁阻（MR）层的邻接非离子注入部分，其中离子注入磁阻（MR）材料是非磁阻（MR）材料。该方法可以用于在具有增强的尺寸均匀性的磁阻（MR）传感器元件磁阻（MR）层内形成，特别是增强的覆盖尺寸均匀性。

39. 发明授权

US07751146B2 Abs through aggressive stitching 失效
标题翻译：通过积极的缝合
公开(公告)号：US07751146B2
公开(公告)日：2010-07-06
申请号：US11881350
申请日：2007-07-26
申请人： Cherng-Chyi Han , Mao-Min Chen , Laurie Lauchlan , Lei Zhang
发明人： Cherng-Chyi Han , Mao-Min Chen , Laurie Lauchlan , Lei Zhang
IPC分类号： G11B5/187 , G11B5/127
CPC分类号： G11B5/33 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/4906 , Y10T29/49062 , Y10T29/49064
摘要： Aggressive (i.e. tight tolerance) stitching offers several advantages for magnetic write heads but at the cost of some losses during pole trimming. This problem has been overcome by replacing the alumina filler layer, that is used to protect the stitched pole during trimming, with a layer of electro-plated material. Because of the superior step coverage associated with the plating method of deposition, pole trimming can then proceed without the introduction of stresses to the stitched pole while it is being trimmed.
摘要翻译：积极（即紧公差）缝合为磁性写入头提供了几个优点，但是在极修整期间以一些损失为代价。通过用一层电镀材料代替在修整期间用于保护缝合极的氧化铝填料层已经克服了这个问题。由于与沉积电镀方法相关的优越的台阶覆盖，因此可以进行极细修剪，而不会在缝合极被修剪时引入应力。

40. 发明授权

US07631418B2 Process to form an ABS through aggressive stitching 失效
标题翻译：通过积极缝合形成ABS的过程
公开(公告)号：US07631418B2
公开(公告)日：2009-12-15
申请号：US11881316
申请日：2007-07-26
申请人： Cherng-Chyi Han , Mao-Min Chen , Laurie Lauchlan , Lei Zhang
发明人： Cherng-Chyi Han , Mao-Min Chen , Laurie Lauchlan , Lei Zhang
IPC分类号： G11B5/187
CPC分类号： G11B5/33 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/4906 , Y10T29/49062 , Y10T29/49064
摘要： A manufacturing process is provided where aggressive (i.e. tight tolerance) stitching offers several advantages for magnetic write heads but at the cost of some losses during pole trimming. This problem has been overcome by replacing the alumina filler layer, that is used to protect the stitched pole during trimming, with a layer of electroplated material. Because of the superior step coverage associated with the plating method of deposition, pole trimming can then proceed without the introduction of stresses to the stitched pole while it is being trimmed.
摘要翻译：提供了一种制造工艺，其中积极（即紧密公差）缝合为磁性写头提供了几个优点，但是在极修整期间以一些损失为代价。通过用一层电镀材料替换用于在修整期间保护缝合极的氧化铝填料层已经克服了这个问题。由于与沉积电镀方法相关的优越的台阶覆盖，因此可以进行极细修剪，而不会在缝合极被修剪时引入应力。

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