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31. 发明授权

US06588310B2 Saw blade shank 有权
标题翻译：锯刀柄
公开(公告)号：US06588310B2
公开(公告)日：2003-07-08
申请号：US09891052
申请日：2001-06-25
申请人： Chang Hyun Lee , Joon Ho Chang
发明人： Chang Hyun Lee , Joon Ho Chang
IPC分类号： B27B3314
CPC分类号： B23D61/026 , Y10T83/9319 , Y10T83/9377 , Y10T83/9403
摘要： The present invention relates to an improvement of the conventional sandwiched type saw blade shank by providing, as the intermediate layer, a coated thin sheet with tens of electro-conductive points or a thin sheet with multiple contacts to enhance weldability and to minimize the thermal deform or pressed marks, so that sound absorption, noise reduction and also heat dissipation may be maximized during a high speed cutting operation. The invention provides a saw blade shank with cutting tips on the circumference of the shank, comprising two or more conductive steel plates (22,24) and coated thin sheet (30) as an intermediate layer inserted between the neighboring conductive steel plates, the coated thin sheet being coated so as to leave a plurality of uncoated areas (32a) on at least one of its surfaces, whereby the coated thin sheets (30) and the steel plates (22,24) are integrally combined by multi-contact thermal fusion through a predetermined high pressure and electric current concentrated on the uncoated areas (32a).
摘要翻译：本发明涉及通过提供具有数十个导电点的涂覆薄片或具有多个触点的薄片作为中间层来改进传统的夹式锯片柄，以增强可焊性并使热变形最小化或按压标记，使得在高速切割操作期间可以使吸声，噪音降低和散热最大化。本发明提供了一种在柄的圆周上具有切割尖端的锯片柄，包括两个或更多个导电钢板（22,24）和作为插入相邻导电钢板之间的中间层的涂覆薄片（30），涂层薄片被涂覆以在其至少一个表面上留下多个未涂覆区域（32a），由此涂覆的薄片（30）和钢板（22,24）通过多接触热熔融通过集中在未涂覆区域（32a）上的预定高压和电流。

32. 发明授权

US06564887B2 Core drill 有权
标题翻译：核心钻
公开(公告)号：US06564887B2
公开(公告)日：2003-05-20
申请号：US09887102
申请日：2001-06-25
申请人： Jae Hyun Hong , Chang Hyun Lee , See Hyung Kim
发明人： Jae Hyun Hong , Chang Hyun Lee , See Hyung Kim
IPC分类号： E21L1302
CPC分类号： B28D1/041 , Y10T408/81
摘要： The present invention relates to a core drill wherein initial drilling workability is improved through reduced frictional resistance on the segment tips, when they are seated on the surface of an article to start cutting operation, and wherein cutting scraps or sludge produced by the segment tips are smoothly discharged through the helical grooves formed on the core body so as to reduce the friction between the core body and the cutting scraps or sludge, whereby both the cooling and cutting performance of the core drill are improved. The invention proposes a core drill with a cylindrical core body with a predetermined diameter and length and with plural cutting segments provided on the lower part of a core body at a finite interval, wherein the cutting thickness surface of the cutting segment consists of inclined sharp thickness portion for decreased frictional resistance with an article to be processed.
摘要翻译：芯钻技术领域本发明涉及一种芯钻，其特征在于，当初始钻孔加工性能降低时，通过降低分段末端的摩擦阻力，当它们被放置在制品的表面上以开始切割操作时，其中切割由分段末端产生的碎屑或污泥通过形成在芯体上的螺旋槽顺利排出，以减少芯体与切屑或污泥之间的摩擦，从而提高了芯钻的冷却和切割性能。本发明提出一种具有预定直径和长度的圆柱形芯体的芯钻，并且具有以有限间隔设置在芯体的下部上的多个切割段，其中切割段的切割厚度表面由倾斜的尖锐厚度与待处理物品摩擦阻力降低的部分。

33. 外观设计

USD458619S1 Segment tip for saw blade 失效
公开(公告)号：USD458619S1
公开(公告)日：2002-06-11
申请号：US29142170
申请日：2001-05-18
申请人： Chang Hyun Lee , Youn Chul Kim
设计人： Chang Hyun Lee , Youn Chul Kim

34. 发明授权

US09773796B2 Non-volatile memory device 有权
公开(公告)号：US09773796B2
公开(公告)日：2017-09-26
申请号：US14640784
申请日：2015-03-06
申请人： Chang Hyun Lee , Jin-Kyu Kim
发明人： Chang Hyun Lee , Jin-Kyu Kim
IPC分类号： H01L27/115 , H01L27/11556 , H01L27/11573 , H01L27/11524 , H01L27/11529 , H01L27/11541
CPC分类号： H01L27/11556 , H01L27/11524 , H01L27/11529 , H01L27/11541 , H01L27/11573
摘要： A non-volatile memory device including a cell array area including a plurality of memory cells and word lines and bit lines, which are connected to the plurality of memory cells, a core circuit area including a page buffer circuit and a row decoder circuit, the pager buffer circuit configured to temporarily store data input to and output from the plurality of memory cells, and the row decoder circuit configured to select some of the word lines corresponding to an address input thereto, and an input/output circuit area including a data input/output buffer circuit, the data input/output buffer circuit configured to at least one of transmit data to the page buffer circuit and receive data from the page buffer circuit, and the input/output circuit area including at least one asymmetrical transistor having a source region and a drain region asymmetrically disposed with respect to the gate structure may be provided.

35. 发明授权

US09214904B2 Differential power amplifier using mode injection 有权
标题翻译：差分功率放大器采用模式注入
公开(公告)号：US09214904B2
公开(公告)日：2015-12-15
申请号：US14350078
申请日：2011-12-23
申请人： Chang Hyun Lee , Chang Kun Park
发明人： Chang Hyun Lee , Chang Kun Park
IPC分类号： H03F3/21 , H03F3/193 , H03F1/22 , H03F3/195 , H03F3/24 , H03F3/45
CPC分类号： H03F3/21 , H03F1/223 , H03F3/193 , H03F3/195 , H03F3/211 , H03F3/245 , H03F3/4508 , H03F3/45179 , H03F2200/451 , H03F2203/45318 , H03F2203/45364 , H03F2203/45394 , H03F2203/45562 , H03F2203/45638 , H03F2203/45644
摘要： Disclosed is a differential power amplifier using mode injection, which includes: a first transistor of which the gate receives a first signal and the source is connected to the ground; a second transistor of which the gate receives a second signal and the source is connected to the ground; a third transistor of which the source is connected to the source of the first transistor; a fourth transistor of which the source is connected to the source of the second transistor; a fifth transistor of which the source is connected with the drain of the first transistor and the drain is connected with a first output port and the drain of the third transistor; and a sixth transistor of which the source is connected with the drain of the second transistor and the drain is connected with a second output port and the drain of the fourth transistor.
摘要翻译：公开了一种使用模式注入的差分功率放大器，其包括：栅极接收第一信号并且源极连接到地的第一晶体管; 栅极接收第二信号并且源极连接到地的第二晶体管; 源极连接到第一晶体管的源极的第三晶体管; 源极连接到第二晶体管的源极的第四晶体管; 源极与第一晶体管的漏极连接的第五晶体管，漏极与第三晶体管的第一输出端口和漏极连接; 以及第六晶体管，其源极与第二晶体管的漏极连接，漏极与第四晶体管的第二输出端口和漏极连接。

36. 发明申请

US20140253234A1 DIFFERENTIAL POWER AMPLIFIER USING MODE INJECTION 有权
标题翻译：使用模式注入的差分功率放大器
公开(公告)号：US20140253234A1
公开(公告)日：2014-09-11
申请号：US14350078
申请日：2011-12-23
申请人： Chang Hyun Lee , Chang Kun Park
发明人： Chang Hyun Lee , Chang Kun Park
IPC分类号： H03F3/21 , H03F3/193 , H03F3/45
CPC分类号： H03F3/21 , H03F1/223 , H03F3/193 , H03F3/195 , H03F3/211 , H03F3/245 , H03F3/4508 , H03F3/45179 , H03F2200/451 , H03F2203/45318 , H03F2203/45364 , H03F2203/45394 , H03F2203/45562 , H03F2203/45638 , H03F2203/45644
摘要： Disclosed is a differential power amplifier using mode injection, which includes: a first transistor of which the gate receives a first signal and the source is connected to the ground; a second transistor of which the gate receives a second signal and the source is connected to the ground; a third transistor of which the source is connected to the source of the first transistor; a fourth transistor of which the source is connected to the source of the second transistor; a fifth transistor of which the source is connected with the drain of the first transistor and the drain is connected with a first output port and the drain of the third transistor; and a sixth transistor of which the source is connected with the drain of the second transistor and the drain is connected with a second output port and the drain of the fourth transistor.
摘要翻译：公开了一种使用模式注入的差分功率放大器，其包括：栅极接收第一信号并且源极连接到地的第一晶体管; 栅极接收第二信号并且源极连接到地的第二晶体管; 源极连接到第一晶体管的源极的第三晶体管; 源极连接到第二晶体管的源极的第四晶体管; 源极与第一晶体管的漏极连接的第五晶体管，漏极与第三晶体管的第一输出端口和漏极连接; 以及第六晶体管，其源极与第二晶体管的漏极连接，漏极与第四晶体管的第二输出端口和漏极连接。

37. 发明申请

US20120080869A1 ROOF AIRBAG APPARATUS FOR VEHICLE 有权
标题翻译：车顶安全气囊装置
公开(公告)号：US20120080869A1
公开(公告)日：2012-04-05
申请号：US12956223
申请日：2010-11-30
申请人： Chang Hyun Lee , Hyeong Ho Choi , Ki Dong Song
发明人： Chang Hyun Lee , Hyeong Ho Choi , Ki Dong Song
IPC分类号： B60R21/214 , B60R21/233 , B60R21/232
CPC分类号： B60R21/214 , B60R2021/23308
摘要： A roof airbag apparatus for a vehicle may include an inflator generating pressurized gas, an airbag cushion provided between a roof of a vehicle body and a head-lining to expand downwards towards a passenger who may be sitting on a seat when the pressurized gas may be supplied to the airbag cushion from the inflator, and a support panel provided on a lower portion of the airbag cushion to contact and screen the passenger's face when the airbag cushion expands.
摘要翻译：用于车辆的屋顶安全气囊装置可以包括产生加压气体的充气机，设置在车体顶部和头衬之间的气囊，以便当加压气体可能位于座椅上时可能坐在座椅上的乘客向下扩张从充气机供给到气囊垫，以及设置在气囊垫的下部的支撑板，用于当气囊缓冲垫膨胀时接触和屏蔽乘客的脸部。

38. 发明授权

US08127516B2 Method for preparing rapidly disintegrating formulation for oral administration and apparatus for preparing and packing the same 有权
标题翻译：制备口服快速崩解制剂的方法及其制备和包装方法
公开(公告)号：US08127516B2
公开(公告)日：2012-03-06
申请号：US12654572
申请日：2009-12-23
申请人： Chang Hyun Lee , Jong Soo Woo , Hong Gi Yi , Kyeong Soo Kim , Ho Taek Yim
发明人： Chang Hyun Lee , Jong Soo Woo , Hong Gi Yi , Kyeong Soo Kim , Ho Taek Yim
IPC分类号： B65B63/08
CPC分类号： A61K9/0056 , A61J3/10 , A61K9/2095 , B30B11/02 , B30B11/08 , B65B9/042 , B65B9/045
摘要： A method and packaging machine for preparing rapidly disintegrating formulations for oral administration are disclosed. The present invention is characterized in that a powdery mixture including a pharmaceutically active ingredient and a sugar or a sugar alcohol powder is filled into a packaging material and, thereafter, the mixture, filled in the packaging material, is heated. The present invention can simply and economically prepare an oral formulation which undergoes rapid disintegration in the oral cavity and provides for high-quality administration to patients.
摘要翻译：公开了用于制备用于口服给药的快速崩解制剂的方法和包装机。本发明的特征在于将包含药物活性成分和糖或糖醇粉末的粉末混合物填充到包装材料中，然后将填充在包装材料中的混合物加热。本发明可以简单且经济地制备在口腔中快速崩解并提供给患者高质量给药的口服制剂。

39. 发明申请

US20110110161A1 Method of Programming a Flash Memory Device 有权
标题翻译：闪存设备编程方法
公开(公告)号：US20110110161A1
公开(公告)日：2011-05-12
申请号：US13008181
申请日：2011-01-18
申请人： Chang Hyun Lee
发明人： Chang Hyun Lee
IPC分类号： G11C16/10
CPC分类号： G11C16/3418 , G11C16/3427
摘要： A non-volatile memory device includes an array of flash memory cells therein and a voltage generator. The voltage generator is configured to generate a program voltage (Vpgm), a pass voltage (Vpass), a blocking voltage (Vblock) and a decoupling voltage (Vdcp) during a flash memory programming operation. The blocking voltage is generated at a level that inhibits inadvertent programming of an unselected memory cell(s). This voltage level of the blocking voltage is set so that Vdcp
摘要翻译：非易失性存储器件包括其中的闪存单元阵列和电压发生器。电压发生器被配置为在闪速存储器编程操作期间产生编程电压（Vpgm），通过电压（Vpass），阻断电压（Vblock）和去耦电压（Vdcp）。阻塞电压产生在抑制非选择存储单元的无意编程的水平。该阻塞电压的电压电平被设定为使得Vdcp

40. 发明申请

US20090129165A1 Nonvolatile Memory Devices and Methods of Operating Same to Inhibit Parasitic Charge Accumulation Therein 有权
标题翻译：非易失性存储器件和操作方法相同以抑制其中的寄生电荷积累
公开(公告)号：US20090129165A1
公开(公告)日：2009-05-21
申请号：US12191434
申请日：2008-08-14
申请人： Chang Hyun Lee , Jung-Dal Choi , Young-Ho Lim , Kang-Deog Suh
发明人： Chang Hyun Lee , Jung-Dal Choi , Young-Ho Lim , Kang-Deog Suh
IPC分类号： G11C16/04 , G11C16/06
CPC分类号： G11C16/0483 , G11C16/16
摘要： Methods of operating a charge trap nonvolatile memory device include operations to erase a first string of nonvolatile memory cells by selectively erasing a first plurality of nonvolatile memory cells in the first string and then selectively erasing a second plurality of nonvolatile memory cells in the first string, which may be interleaved with the first plurality of nonvolatile memory cells. This operation to selectively erase the first plurality of nonvolatile memory cells may include erasing the first plurality of nonvolatile memory cells while simultaneously biasing the second plurality of nonvolatile memory cells in a blocking condition that inhibits erasure of the second plurality of nonvolatile memory cells. The operation to selectively erase the second plurality of nonvolatile memory cells may include erasing the second plurality of nonvolatile memory cells while simultaneously biasing the first plurality of nonvolatile memory cells in a blocking condition that inhibits erasure of the first plurality of nonvolatile memory cells.
摘要翻译：操作电荷阱非易失性存储装置的方法包括通过选择性地擦除第一串中的第一多个非易失性存储单元，然后选择性地擦除第一串中的第二多个非易失性存储单元来擦除第一串非易失性存储单元的操作，其可以与第一多个非易失性存储器单元交错。选择性地擦除第一多个非易失性存储单元的操作可以包括擦除第一多个非易失性存储单元，同时在禁止擦除第二多个非易失性存储单元的阻塞条件下同时偏置第二多个非易失性存储单元。选择性地擦除第二多个非易失性存储单元的操作可以包括擦除第二多个非易失性存储单元，同时在禁止擦除第一多个非易失性存储单元的阻塞条件下同时偏置第一多个非易失性存储单元。

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