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31. 发明授权

US08101978B2 Circuit and photo sensor overlap for backside illumination image sensor 有权
标题翻译：背面照明图像传感器的电路和光电传感器重叠
公开(公告)号：US08101978B2
公开(公告)日：2012-01-24
申请号：US12053476
申请日：2008-03-21
申请人： Tiejun Dai , Hsin-Chih Tai , Sohei Manabe , Hidetoshi Nozaki , Howard E. Rhodes
发明人： Tiejun Dai , Hsin-Chih Tai , Sohei Manabe , Hidetoshi Nozaki , Howard E. Rhodes
IPC分类号： H01L27/148 , H01L29/768 , H01L31/062 , H01L31/113
CPC分类号： H01L27/14603 , H01L27/14627 , H01L27/1464 , H01L27/14641
摘要： A backside illuminated (“BSI”) imaging sensor pixel includes a photodiode region and pixel circuitry. The photodiode region is disposed within a semiconductor die for accumulating an image charge in response to light incident upon a backside of the BSI imaging sensor pixel. The pixel circuitry includes transistor pixel circuitry disposed within the semiconductor die between a frontside of the semiconductor die and the photodiode region. At least a portion of the pixel circuitry overlaps the photodiode region.
摘要翻译：背面照明（“BSI”）成像传感器像素包括光电二极管区域和像素电路。光电二极管区域设置在半导体管芯内，用于响应于入射到BSI成像传感器像素的背面的光积累图像电荷。像素电路包括设置在半导体管芯内的半导体管芯的前侧和光电二极管区域之间的晶体管像素电路。像素电路的至少一部分与光电二极管区域重叠。

32. 发明申请

US20120013777A1 CMOS IMAGE SENSOR WITH IMPROVED PHOTODIODE AREA ALLOCATION 有权
标题翻译：具有改进的光电区域分配的CMOS图像传感器
公开(公告)号：US20120013777A1
公开(公告)日：2012-01-19
申请号：US12837870
申请日：2010-07-16
申请人： Duli Mao , Hsin-Chih Tai , Vincent Venezia , Yin Qian , Howard E. Rhodes
发明人： Duli Mao , Hsin-Chih Tai , Vincent Venezia , Yin Qian , Howard E. Rhodes
IPC分类号： H04N9/04
CPC分类号： H04N5/3696 , H01L27/14621 , H01L27/1464 , H04N9/04
摘要： Embodiments of an apparatus comprising a pixel array comprising a plurality of macropixels. Each macropixel includes a pair of first pixels each including a color filter for a first color, the first color being one to which pixels are most sensitive, a second pixel including a color filter for a second color, the second color being one to which the pixels are least sensitive and a third pixel including a color filter for a third color, the third color being one to which pixels have a sensitivity between the least sensitive and the most sensitive, wherein the first pixels each occupy a greater proportion of the light-collection area of the macropixel than either the second pixel or the third pixel. Corresponding process and system embodiments are disclosed and claimed.
摘要翻译：包括包括多个宏像素的像素阵列的装置的实施例。每个宏像素包括一对第一像素，每个第一像素包括用于第一颜色的滤色器，第一颜色是像素最敏感的一个，第二像素包括用于第二颜色的滤色器，第二颜色是像素是最不灵敏的，并且第三像素包括用于第三颜色的滤色器，第三颜色是像素在最不灵敏和最敏感之间具有灵敏度的一个，其中第一像素每个占据较大比例的发光元件，大小像素的收集区域比第二像素还是第三像素。公开和要求保护相应的过程和系统实施例。

33. 发明申请

US20120001242A1 SINGLE POLY CMOS IMAGER 审中-公开
标题翻译：单色CMOS图像
公开(公告)号：US20120001242A1
公开(公告)日：2012-01-05
申请号：US13212649
申请日：2011-08-18
申请人： Howard E. Rhodes
发明人： Howard E. Rhodes
IPC分类号： H01L31/02
CPC分类号： H01L27/14643 , H01L27/14689
摘要： More complete charge transfer is achieved in a CMOS or CCD imager by reducing the spacing in the gaps between gates in each pixel cell, and/or by providing a lightly doped region between adjacent gates in each pixel cell, and particularly at least between the charge collecting gate and the gate downstream to the charge collecting gate. To reduce the gaps between gates, an insulator cap with spacers on its sidewalls is formed for each gate over a conductive layer. The gates are then etched from the conductive layer using the insulator caps and spacers as hard masks, enabling the gates to be formed significantly closer together than previously possible, which, in turn increases charge transfer efficiency. By providing a lightly doped region on between adjacent gates, a more complete charge transfer is effected from the charge collecting gate.
摘要翻译：通过减小每个像素单元中的栅极之间的间隙和/或通过在每个像素单元中的相邻栅极之间提供轻掺杂区域，特别是至少在电荷之间，在CMOS或CCD成像器中实现更完整的电荷转移收集门和下游的门到电荷收集门。为了减小栅极之间的间隙，在导电层上为每个栅极形成在其侧壁上具有间隔物的绝缘体盖。然后使用绝缘体盖和间隔物作为硬掩模，从导电层蚀刻栅极，使得栅极能够形成得比先前可能的显着更靠近在一起，这又增加了电荷转移效率。通过在相邻栅极之间提供轻掺杂区域，从电荷收集栅极实现更完整的电荷转移。

34. 发明申请

US20110278436A1 IMAGE SENSOR WITH BACKSIDE PASSIVATION AND METAL LAYER 有权
标题翻译：具有背面钝化和金属层的图像传感器
公开(公告)号：US20110278436A1
公开(公告)日：2011-11-17
申请号：US13191042
申请日：2011-07-26
申请人： Howard E. Rhodes , Hidetoshi Nozaki
发明人： Howard E. Rhodes , Hidetoshi Nozaki
IPC分类号： H01L27/146 , B82Y20/00
CPC分类号： H01L27/14629 , H01L27/14609 , H01L27/14621 , H01L31/02327
摘要： An image sensor includes a semiconductor layer that filters light of different wavelengths. For example, the semiconductor layer absorbs photons of shorter wavelengths and passes more photons of longer wavelengths such that the longer wavelength photons often pass through without being absorbed. An imaging pixel having a photodiode is formed near a front side of the semiconductor layer. A dopant layer is formed below the photodiode near a back side of the semiconductor layer. A mirror that primarily reflects photons of longer visible wavelengths is disposed on the back side of the semiconductor layer.
摘要翻译：图像传感器包括对不同波长的光进行滤光的半导体层。例如，半导体层吸收较短波长的光子并且传递较长波长的更多光子，使得较长波长的光子经常通过而不被吸收。具有光电二极管的成像像素形成在半导体层的正面附近。在半导体层的背面附近的光电二极管附近形成掺杂剂层。主要反射更长可见波长的光子的反射镜设置在半导体层的背面。

35. 发明申请

US20110260221A1 LASER ANNEAL FOR IMAGE SENSORS 有权
标题翻译：激光雷达用于图像传感器
公开(公告)号：US20110260221A1
公开(公告)日：2011-10-27
申请号：US12768319
申请日：2010-04-27
申请人： Duli Mao , Hsin-Chih Tai , Vincent Venezia , Yin Qian , Howard E. Rhodes
发明人： Duli Mao , Hsin-Chih Tai , Vincent Venezia , Yin Qian , Howard E. Rhodes
IPC分类号： H01L31/0232 , H01L31/18
CPC分类号： H01L27/14698 , H01L27/14623 , H01L27/14627 , H01L27/1464 , H01L27/14643 , H01L27/14689
摘要： A technique for fabricating an image sensor including a pixel circuitry region and a peripheral circuitry region includes fabricating front side components on a front side of the image sensor. A dopant layer is implanted on a backside of the image sensor. A anti-reflection layer is formed on the backside and covers a first portion of the dopant layer under the pixel circuitry region while exposing a second portion of the dopant layer under the peripheral circuitry region. The first portion of the dopant layer is laser annealed from the backside of the image sensor through the anti-reflection layer. The anti-reflection layer increases a temperature of the first portion of the dopant layer during the laser annealing.
摘要翻译：一种用于制造包括像素电路区域和外围电路区域的图像传感器的技术包括在图像传感器的正面上制造前侧部件。掺杂剂层植入图像传感器的背面。在背面形成防反射层，并且在像素电路区域下方覆盖掺杂剂层的第一部分，同时在外围电路区域下方暴露掺杂剂层的第二部分。掺杂剂层的第一部分通过抗反射层从图像传感器的背面激光退火。抗反射层在激光退火期间增加掺杂剂层的第一部分的温度。

36. 发明授权

US08018015B2 Buried conductor for imagers 有权
标题翻译：埋地导体成像仪
公开(公告)号：US08018015B2
公开(公告)日：2011-09-13
申请号：US11168760
申请日：2005-06-29
申请人： Howard E. Rhodes
发明人： Howard E. Rhodes
IPC分类号： H01L27/146 , H01L31/062 , H01L31/113 , H01L31/00
CPC分类号： H01L27/14683 , H01L27/14609 , H01L27/14636 , H01L27/14643
摘要： A pixel cell having a photo-conversion device at a surface of a substrate and at least one contact area from which charge or a signal is output or received. A first insulating layer is located over the photo-conversion device and the at least one contact area. The pixel cell further includes at least one conductor in contact with the at least one contact area. The conductor includes a polysilicon material extending through the first insulating layer and in contact with the at least one contact area. Further, a conductive material, which includes at least one of a silicide and a refractory metal, can be over and in contact with the polysilicon material.
摘要翻译：具有在基板的表面处的光转换装置的像素单元和输出或接收电荷或信号的至少一个接触区域。第一绝缘层位于光转换器件和至少一个接触区域之上。像素单元还包括与至少一个接触区域接触的至少一个导体。导体包括延伸穿过第一绝缘层并与至少一个接触区域接触的多晶硅材料。此外，包括硅化物和难熔金属中的至少一种的导电材料可以与多晶硅材料结合并接触。

37. 发明授权

US07968403B2 Method of fabricating a sleeve insulator for a contact structure 有权
标题翻译：制造用于接触结构的套筒绝缘体的方法
公开(公告)号：US07968403B2
公开(公告)日：2011-06-28
申请号：US11514640
申请日：2006-09-01
申请人： Philip J. Ireland , Howard E. Rhodes
发明人： Philip J. Ireland , Howard E. Rhodes
IPC分类号： H01L21/8242
CPC分类号： H01L27/10888 , H01L21/76897 , H01L27/10811 , H01L2924/0002 , H01L2924/00
摘要： A method and structure are disclosed that are advantageous for aligning a contact plug within a bit line contact corridor (BLCC) to an active area of a DRAM that utilizes an insulated sleeve structure. A sleeve insulator layer is deposited in an opening to protect one or more conductor layers from conductive contacts formed in the opening. The sleeve insulator layer electrically insulates a conductive plug from the conductor layer and self-aligns the BLCC so as to improve contact plug alignment tolerances between the BLCC and the capacitor or conductive components.
摘要翻译：公开了一种有利于将位线接触走廊（BLCC）内的接触插塞对准利用绝缘套管结构的DRAM的有源区域的方法和结构。套管绝缘体层沉积在开口中以保护一个或多个导体层与形成在开口中的导电触头。套管绝缘体层将导电插塞与导体层电绝缘，并使BLCC自对准，以提高BLCC与电容器或导电部件之间的接触插塞对准公差。

38. 发明授权

US07952096B2 CMOS image sensor with improved backside surface treatment 有权
标题翻译： CMOS图像传感器具有改进的背面处理
公开(公告)号：US07952096B2
公开(公告)日：2011-05-31
申请号：US12330226
申请日：2008-12-08
申请人： Howard E. Rhodes
发明人： Howard E. Rhodes
IPC分类号： H01L29/04
CPC分类号： H01L27/14601 , H01L27/14621 , H01L27/14627 , H01L27/14636 , H01L27/1464 , H01L27/14643 , H01L27/14689 , H01L27/14698
摘要： An apparatus and method for fabricating an array of backside illuminated (“BSI”) image sensors is disclosed. Front side components of the BSI image sensors are formed into a front side of the array. A dopant layer is implanted into a backside of the array. The dopant layer establishes a dopant gradient to encourage photo-generated charge carriers to migrate towards the front side of the array. At least a portion of the dopant layer is annealed. A surface treatment is formed on the backside of the dopant layer to cure surface defects.
摘要翻译：公开了一种用于制造背面照明（“BSI”）图像传感器阵列的装置和方法。 BSI图像传感器的前侧部件形成为阵列的前侧。将掺杂剂层注入阵列的背面。掺杂剂层建立掺杂剂梯度以促使光生电荷载流子朝向阵列的前侧迁移。掺杂剂层的至少一部分被退火。在掺杂剂层的背面形成表面处理以固化表面缺陷。

39. 发明授权

US07936955B2 Waveguide for thermo optic device 有权
标题翻译：波导用于光电装置
公开(公告)号：US07936955B2
公开(公告)日：2011-05-03
申请号：US12780601
申请日：2010-05-14
申请人： Guy T. Blalock , Howard E. Rhodes , Vishnu K. Agarwal , Gurtej Singh Sandhu , James S. Foresi , Jean-Francois Viens , Dale G. Fried
发明人： Guy T. Blalock , Howard E. Rhodes , Vishnu K. Agarwal , Gurtej Singh Sandhu , James S. Foresi , Jean-Francois Viens , Dale G. Fried
IPC分类号： G02B6/26
CPC分类号： G02F1/025 , G02B6/125 , G02B6/136 , G02B2006/12107 , G02B2006/12164 , G02F1/0147 , G02F2203/15
摘要： A waveguide and resonator are formed on a lower cladding of a thermo optic device, each having a formation height that is substantially equal. Thereafter, the formation height of the waveguide is attenuated. In this manner, the aspect ratio as between the waveguide and resonator in an area where the waveguide and resonator front or face one another decreases (in comparison to the prior art) thereby restoring the synchronicity between the waveguide and the grating and allowing higher bandwidth configurations to be used. The waveguide attenuation is achieved by photomasking and etching the waveguide after the resonator and waveguide are formed. In one embodiment the photomasking and etching is performed after deposition of the upper cladding. In another, it is performed before the deposition. Thermo optic devices, thermo optic packages and fiber optic systems having these waveguides are also taught.
摘要翻译：波导和谐振器形成在热光器件的下包层上，每个具有基本上相等的形成高度。此后，波导的形成高度被衰减。以这种方式，波导和谐振器在波导和谐振器前面或彼此面对的区域（与现有技术相比）中的波导和谐振器之间的纵横比，从而恢复波导和光栅之间的同步性并允许更高的带宽配置要使用的。在形成谐振器和波导之后，通过光掩模和蚀刻波导来实现波导衰减。在一个实施例中，在沉积上部包层之后进行光掩模和蚀刻。另一方面，它是在沉积之前进行的。还教导了具有这些波导的热光器件，热光封装和光纤系统。

40. 发明申请

US20110095188A1 BACKSIDE ILLUMINATED IMAGING SENSOR WITH IMPROVED INFRARED SENSITIVITY 有权
标题翻译：具有改进的红外灵敏度的背面照明成像传感器
公开(公告)号：US20110095188A1
公开(公告)日：2011-04-28
申请号：US12984452
申请日：2011-01-04
申请人： Yin Qian , Howard E. Rhodes , Hsin-Chih Tai , Vincent Venezia , Duli Mao
发明人： Yin Qian , Howard E. Rhodes , Hsin-Chih Tai , Vincent Venezia , Duli Mao
IPC分类号： H01L31/101
CPC分类号： H01L27/14603 , H01L27/14621 , H01L27/14627 , H01L27/14632 , H01L27/14636 , H01L27/1464 , H01L27/14641 , H01L27/14647 , H01L27/14652
摘要： A backside illuminated imaging sensor includes a semiconductor layer and an infrared detecting layer. The semiconductor layer has a front surface and a back surface. An imaging pixel includes a photodiode region formed within the semiconductor layer. The infrared detecting layer is disposed above the front surface of the semiconductor layer to receive infrared light that propagates through the imaging sensor from the back surface of the semiconductor layer.
摘要翻译：背面照明成像传感器包括半导体层和红外检测层。半导体层具有前表面和后表面。成像像素包括形成在半导体层内的光电二极管区域。红外线检测层设置在半导体层的前表面上方，以从半导体层的背面接收从成像传感器传播的红外光。

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