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31. 发明授权

US4997520A Method for etching tungsten 失效
标题翻译：蚀刻钨的方法
公开(公告)号：US4997520A
公开(公告)日：1991-03-05
申请号：US204821
申请日：1988-06-10
申请人： Rhett B. Jucha , Cecil J. Davis , Duane Carter , Jeff D. Achenbach
发明人： Rhett B. Jucha , Cecil J. Davis , Duane Carter , Jeff D. Achenbach
IPC分类号： C23F4/00 , H01L21/3213
CPC分类号： H01L21/32135 , C23F4/00
摘要： A method for etching a tungsten film which includes introducing activated species of a halogenated hydrocarbon to the tungsten film.
摘要翻译：一种用于蚀刻钨膜的方法，其包括将活化的卤代烃类引入到钨膜中。

32. 发明授权

US4867841A Method for etch of polysilicon film 失效
标题翻译：多晶硅膜蚀刻方法
公开(公告)号：US4867841A
公开(公告)日：1989-09-19
申请号：US203585
申请日：1988-05-27
申请人： Lee M. Loewenstein , Cecil J. Davis , Rhett B. Jucha
发明人： Lee M. Loewenstein , Cecil J. Davis , Rhett B. Jucha
IPC分类号： H01L21/3213
CPC分类号： H01L21/32137
摘要： A process for etch of polysilicon films which utilizes the combination of remote and in situ plasma in a low pressure process module and the plasma is generated from a mixture of Helium and a source of Fluorine with the process chamber within the process module being generally at ambient temperatures.
摘要翻译：用于蚀刻多晶硅膜的方法，其利用低压工艺模块中的远程和原位等离子体的组合以及来自氦和氟源的混合物的等离子体，处理模块内的处理室通常为环境温度温度。

33. 发明授权

US4842680A Advanced vacuum processor 失效
标题翻译：先进的真空处理器
公开(公告)号：US4842680A
公开(公告)日：1989-06-27
申请号：US188633
申请日：1988-05-02
申请人： Cecil J. Davis , Timothy J. Wooldridge , Duane E. Carter
发明人： Cecil J. Davis , Timothy J. Wooldridge , Duane E. Carter
IPC分类号： H01L21/00 , H01L21/677 , H01L21/687
CPC分类号： H01L21/67201 , H01L21/6719 , H01L21/67772 , H01L21/68785
摘要： A complete integrated circuit processing module, wherein multiple processing stations, each with its own vacuum isolation, are located inside a single module which is held at hard vacuum. A wafer transport arm mechanism permits interchange of wafers among the processing stations and a load lock. The load lock is equipped to remove and replace wafers from a vacuum-sealed wafer carrier. The wafers remain face-down and under hard vacuum during all the wafer handling steps.
摘要翻译：一个完整的集成电路处理模块，其中具有其自身真空隔离的多个处理站位于保持在硬真空下的单个模块内部。晶片传送臂机构允许在处理站之间交换晶片和加载锁定。负载锁被设置为从真空密封的晶片载体中移除和替换晶片。在所有晶片处理步骤期间，晶片保持面朝下且在硬真空下。

34. 发明授权

US4842676A Process for etch of tungsten 失效
标题翻译：钨蚀刻工艺
公开(公告)号：US4842676A
公开(公告)日：1989-06-27
申请号：US122605
申请日：1987-11-17
申请人： Rhett B. Jucha , Cecil J. Davis , Lee M. Loewenstein
发明人： Rhett B. Jucha , Cecil J. Davis , Lee M. Loewenstein
IPC分类号： C23F4/00 , H01L21/3213
CPC分类号： H01L21/32136 , C23F4/00
摘要： A process for etch of tungsten which utilizes both in situ and remote plasmas, and a gas mixture for the plasma which comprises SF.sub.6, HBr, and a source of hydrocarbons at low pressure and ambient temperature to product an etch which is both selective to silicon dioxide and photoresist and anisotropic.
摘要翻译：用于蚀刻钨的方法，其利用原位和远程等离子体，以及用于等离子体的气体混合物，其包含SF 6，HBr和在低压和环境温度下的烃源，以产生对二氧化硅有选择性的蚀刻和光致抗蚀剂和各向异性。

35. 发明授权

US4685999A Apparatus for plasma assisted etching 失效
标题翻译：等离子辅助蚀刻装置
公开(公告)号：US4685999A
公开(公告)日：1987-08-11
申请号：US790707
申请日：1985-10-24
申请人： Cecil J. Davis , Duane E. Carter , Rhett B. Jucha
发明人： Cecil J. Davis , Duane E. Carter , Rhett B. Jucha
IPC分类号： H01L21/302 , C23F1/00 , H01J37/32 , H01L21/3065 , B44C1/22 , C03C15/00 , C03C25/06
CPC分类号： H01J37/3244
摘要： An apparatus for reactive ion etching or plasma etching wherein the wafer faces downward. The process gas is supplied through a distributor which is below the wafer and has orifices pointing away from the wafer. The vacuum (exhaust) port is below the distributor, so that there is no bulk gas flow near the face of the wafer. Preferably transport of the process gasses and their products to the face of the wafer is dominated by diffusion.
摘要翻译：用于反应离子蚀刻或等离子体蚀刻的装置，其中晶片面向下。工艺气体通过位于晶片下方并具有远离晶片的孔的分配器供应。真空（排气）端口位于分配器下面，使得在晶片表面附近没有大量气体流动。优选将工艺气体及其产品输送到晶片的表面，由扩散来支配。

36. 发明授权

US6126790A Method of magnetically orienting thin magnetic films with a multiple-coil electromagnet 有权
标题翻译：用多线圈电磁铁磁性取向薄磁膜的方法
公开(公告)号：US6126790A
公开(公告)日：2000-10-03
申请号：US499144
申请日：2000-02-07
申请人： Mehrdad M. Moslehi , Shiyuan Cheng , Cecil J. Davis , Dorian Heimanson
发明人： Mehrdad M. Moslehi , Shiyuan Cheng , Cecil J. Davis , Dorian Heimanson
IPC分类号： B05D5/12 , C23C14/00 , C23C14/22 , C23C14/35 , C23C14/58 , H01F3/00 , H01F5/00 , H01F7/20 , H01F41/14 , H01F41/18 , H01H1/00
CPC分类号： C23C14/22 , C23C14/351 , H01F41/14 , H01F41/18 , H01F7/20
摘要： An electromagnet assembly magnetically orients a thin magnetic film deposited onto a surface of a substrate. The magnetic orientation can take place in a low-pressure processing environment such as during the deposition of the thin magnetic film or during a subsequent operation such as annealing. The electromagnet assembly includes a plate-shaped core located adjacent to the substrate and two or more electromagnetic coils that are wrapped in different directions around the core. Electrical currents conveyed through the electromagnetic coils are controlled for orienting a substantially uniaxial magnetic field throughout a range of angular positions in a plane of the substrate surface.
摘要翻译：电磁体组件磁性地定向沉积在基底表面上的薄磁膜。磁性取向可以在低压处理环境中进行，例如在薄磁膜的沉积期间或在诸如退火的后续操作期间。电磁体组件包括位于基板附近的板状铁芯和围绕铁芯缠绕在不同方向上的两个或多个电磁线圈。控制通过电磁线圈输送的电流用于在衬底表面的平面中的角位置的整个范围内定向基本上单轴的磁场。

37. 发明授权

US6042707A Multiple-coil electromagnet for magnetically orienting thin films 失效
标题翻译：用于磁取向薄膜的多线圈电磁铁
公开(公告)号：US6042707A
公开(公告)日：2000-03-28
申请号：US83363
申请日：1998-05-22
申请人： Mehrdad M. Moslehi , Shiyuan Cheng , Cecil J. Davis , Dorian Heimanson
发明人： Mehrdad M. Moslehi , Shiyuan Cheng , Cecil J. Davis , Dorian Heimanson
IPC分类号： B05D5/12 , C23C14/00 , C23C14/22 , C23C14/35 , C23C14/58 , H01F3/00 , H01F5/00 , H01F7/20 , H01F41/14 , H01F41/18 , H01H1/00 , C14C14/35
CPC分类号： C23C14/22 , C23C14/351 , H01F41/14 , H01F41/18 , H01F7/20
摘要： An electromagnet assembly magnetically orients a thin magnetic film deposited onto a surface of a substrate. The magnetic orientation can take place in a low-pressure processing environment such as during the deposition of the thin magnetic film or during a subsequent operation such as annealing. The electromagnet assembly includes a plate-shaped core located adjacent to the substrate and two or more electromagnetic coils that are wrapped in different directions around the core. Electrical currents conveyed through the electromagnetic coils are controlled for orienting a substantially uniaxial magnetic field throughout a range of angular positions in a plane of the substrate surface.
摘要翻译：电磁体组件磁性地定向沉积在基底表面上的薄磁膜。磁性取向可以在低压处理环境中进行，例如在薄磁膜的沉积期间或在诸如退火的后续操作期间。电磁体组件包括位于基板附近的板状铁芯和围绕铁芯缠绕在不同方向上的两个或多个电磁线圈。控制通过电磁线圈输送的电流用于在衬底表面的平面中的角位置的整个范围内定向基本上单轴的磁场。

38. 发明授权

US4923562A Processing of etching refractory metals 失效
$Processing of etching refractory metals$
标题翻译：蚀刻难熔金属的加工
公开(公告)号：US4923562A
公开(公告)日：1990-05-08
申请号：US279320
申请日：1988-12-01
申请人： Rhett B. Jucha , Cecil J. Davis
发明人： Rhett B. Jucha , Cecil J. Davis
IPC分类号： H01L21/3213
CPC分类号： H01L21/32136
摘要： A processing apparatus and method for anisotropically etching thin film metal (e.g. tungsten) under plasma bombardment conditions by using a feed gas mixture which includes a fluorine source (such as SF.sub.6) plus a bromine source (such as HBr), plus a very weak oxygen source (e.g. carbon monoxide). This chemistry provides anisotropic high rate fluoro-etching with good selectivity to photoresist.
摘要翻译：一种用于在等离子体轰击条件下通过使用包括氟源（例如SF 6）加溴源（例如HBr）的进料气体混合物加上非常弱的氧气的各向异性蚀刻薄膜金属（例如钨）的加工装置和方法来源（如一氧化碳）。该化学提供各向异性高速氟蚀刻，对光致抗蚀剂具有良好的选择性。

39. 发明授权

US4882008A Dry development of photoresist 失效
标题翻译：光刻胶的干燥发展
公开(公告)号：US4882008A
公开(公告)日：1989-11-21
申请号：US216884
申请日：1988-07-08
申请人： Cesar M. Garza , Monte A. Douglas , Lee M. Loewenstein , Cecil J. Davis
发明人： Cesar M. Garza , Monte A. Douglas , Lee M. Loewenstein , Cecil J. Davis
IPC分类号： G03F7/26 , H01L21/311
CPC分类号： H01L21/31138 , G03F7/265
摘要： A process for developing a photolithographic pattern on the surface of an exposed workpiece in a process chamber; disposing the workpiece in a process chamber; heating the workpiece and introducing a silylating agent to the process chamber and to a face of the workpiece to be processed; generating activated species from a source of oxygen; and introducing the activated species to the face of the workpiece.
摘要翻译：一种用于在处理室中暴露的工件的表面上显影光刻图案的工艺; 将工件放置在处理室中; 加热工件并将甲硅烷基化剂引入处理室和待加工的工件的表面; 从氧源产生活化物质; 并将活化物质引入到工件的表面。

40. 发明授权

US06444103B1 Method and apparatus for thin film deposition using an active shutter 失效
标题翻译：使用主动快门进行薄膜沉积的方法和装置
公开(公告)号：US06444103B1
公开(公告)日：2002-09-03
申请号：US09662575
申请日：2000-09-15
申请人： Mehrdad M. Moslehi , Yong Jin Lee , Cecil J. Davis , Ajit P. Paranjpe
发明人： Mehrdad M. Moslehi , Yong Jin Lee , Cecil J. Davis , Ajit P. Paranjpe
IPC分类号： C23C1434
CPC分类号： H01J37/3447 , C23C14/3464 , C23C14/564
摘要： Material is deposited from an active shutter onto a substrate located in a processing chamber housing with a shutter target coupled to a shutter target assembly. A first target assembly located in the housing supports a target for physical-vapor deposition of a first material onto the substrate. A shutter is selectively moveable to extend into a closed or activated position and to retract into an open position. The shutter target assembly is coupled to the shutter such that when the shutter is in the closed position, the shutter target assembly is positioned to allow deposition of material from the shutter target onto the substrate. When the shutter is in the open position, the first target is positioned to deposit material onto the substrate. Alternating layers of materials may be deposited by the shutter target and first target by cycling the shutter between an open position and a closed position.
摘要翻译：材料从活动快门沉积到位于处理室壳体中的基板上，其中快门目标件联接到快门目标组件。位于壳体中的第一目标组件支撑用于将第一材料物理 - 气相沉积到衬底上的靶。快门选择性地可移动以延伸到关闭或启动位置并缩回到打开位置。快门目标组件联接到快门，使得当快门处于关闭位置时，快门目标组件被定位成允许材料从快门目标物体沉积到基板上。当快门处于打开位置时，第一目标定位成将材料沉积到基板上。通过在打开位置和关闭位置之间循环活门，可以通过快门目标和第一目标来沉积材料的交替层。

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