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31. 发明授权

US07603667B2 Multi-download structure and method of mobile communication terminal 有权
标题翻译：移动通信终端的多下载结构和方法
公开(公告)号：US07603667B2
公开(公告)日：2009-10-13
申请号：US10078154
申请日：2002-02-20
申请人： Mun Ju Lee , Dong Kyun Lee , Hyung Kun Lee
发明人： Mun Ju Lee , Dong Kyun Lee , Hyung Kun Lee
IPC分类号： G06F9/44 , G06F9/445 , H04M3/00
CPC分类号： H04W8/245
摘要： A multi-download structure and a method of downloading information to one or more mobile communications terminals is provided. The structure includes an input unit for inputting download terms. A user download executing unit displays the inputted download terms and model information of mounted terminals on a screen and integrally controls/manages a multi-downloading operation. A plurality of lower download executing units, in which terminal model information has been registered, individually execute download operations to each mounted terminal. A medium unit receives the download terms and the terminal model information from the user download executing unit, automatically selects a model of the terminal to be downloaded, automatically calls the plurality of lower download executing units corresponding to the selected terminal models, and executes the multi-downloading operation.
摘要翻译：提供了一种多种下载结构和向一个或多个移动通信终端下载信息的方法。该结构包括用于输入下载项的输入单元。用户下载执行单元将所输入的下载条件和安装终端的型号信息显示在屏幕上，并且一体地控制/管理多重下载操作。已经登记了终端模型信息的多个下位执行单元分别对每个安装的终端执行下载操作。中间单元从用户下载执行单元接收下载项和终端模型信息，自动选择要下载的终端的模型，自动调用与所选择的终端模型对应的多个下位执行单元，并执行多个下载操作。

32. 发明授权

US06984920B2 Linear piezoelectric ultrasonic motor 失效
公开(公告)号：US06984920B2
公开(公告)日：2006-01-10
申请号：US10211868
申请日：2002-08-02
申请人： Seok Jin Yoon , Hyun Jai Kim , Ji Won Choi , Chong Yun Kang , Dong Kyun Lee , Piotr Vasiljev
发明人： Seok Jin Yoon , Hyun Jai Kim , Ji Won Choi , Chong Yun Kang , Dong Kyun Lee , Piotr Vasiljev
IPC分类号： H01L41/08
CPC分类号： H02N2/026 , H02N2/0025
摘要： The present invention relates to a linear motor which draws its operating power from ultrasonic vibration above the frequency of 20 kHz which is generated by piezoelectric ceramic. More particularly, the invention relates to a linear piezoelectric ultrasonic motor which linearly operates a slider due to a frictional force generated by applying sinusoidal electric field with a 90 degree phase difference to a pair of piezoelectric ceramic. This causes an elliptical mechanical vibration on a shaking beam which is connected to the piezoelectric ceramic.

33. 发明申请

US20120098132A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120098132A1
公开(公告)日：2012-04-26
申请号：US13279546
申请日：2011-10-24
申请人： Cheol Hwan PARK , Ho Jin Cho , Dong Kyun Lee
发明人： Cheol Hwan PARK , Ho Jin Cho , Dong Kyun Lee
IPC分类号： H01L29/43 , H01L21/28
CPC分类号： H01L28/75
摘要： A semiconductor device with a stable structure having high capacitance by changing the pillar type storage node structure and a method of manufacturing the same are provided. The method includes forming a sacrificial layer on a semiconductor substrate including a storage node contact plug, etching the sacrificial layer to form a region exposing the storage node contact plug, forming a first conductive material within an inner side of the region, burying a second conductive material within the region in which the first conductive material is formed, and removing the sacrificial layer to form a pillar type storage node.
摘要翻译：提供了通过改变柱型存储节点结构具有高电容的稳定结构的半导体器件及其制造方法。该方法包括在包括存储节点接触插塞的半导体衬底上形成牺牲层，蚀刻牺牲层以形成露出存储节点接触插塞的区域，在该区域内侧形成第一导电材料，将第二导电在其中形成第一导电材料的区域内的材料，以及去除牺牲层以形成柱状存储节点。

34. 发明授权

US08148764B2 Semiconductor device having a high aspect cylindrical capacitor and method for fabricating the same 有权
标题翻译：具有高方位圆柱形电容器的半导体器件及其制造方法
公开(公告)号：US08148764B2
公开(公告)日：2012-04-03
申请号：US13185873
申请日：2011-07-19
申请人： Cheol Hwan Park , Ho Jin Cho , Dong Kyun Lee
发明人： Cheol Hwan Park , Ho Jin Cho , Dong Kyun Lee
IPC分类号： H01L27/108 , H01L29/76 , H01L29/94 , H01L31/119
CPC分类号： H01L28/91 , H01L27/10817 , H01L27/10852 , H01L27/10894
摘要： A semiconductor device having a high aspect cylindrical capacitor and a method for fabricating the same is presented. The high aspect cylindrical type capacitor is a stable structure which is not prone to causing bunker defects and losses in a guard ring. The semiconductor device includes the cylindrical type capacitor structure, a storage node oxide, a guard ring hole, a conducive layer, and a capping oxide. The cylindrical type capacitor structure in a cell region includes a cylindrical type lower electrode, a dielectric and an upper electrode. The storage node oxide is in a peripheral region over the semiconductor substrate. The conductive layer coating the guard ring hole. The guard ring hole at a boundary of the peripheral region that adjoins the cell region over the semiconductor substrate. The capping oxide partially fills in a part of the conductive layer. The gapfill film filling in the rest of the conductive layer.
摘要翻译：提出了具有高方位圆柱形电容器的半导体器件及其制造方法。高档圆柱型电容器是一种稳定的结构，不容易造成保护环中的掩体缺陷和损失。半导体器件包括圆柱形电容器结构，存储节点氧化物，保护环孔，导电层和封盖氧化物。单元区域中的圆柱型电容器结构包括圆筒形下电极，电介质和上电极。存储节点氧化物位于半导体衬底上的周边区域中。导电层涂覆保护环孔。在与半导体基板上的单元区域相邻的周边区域的边界处的保护环孔。覆盖氧化物部分地填充导电层的一部分。间隙填充膜填充在导电层的其余部分。

35. 发明授权

US07723183B2 Capacitor having tapered cylindrical storage node and method for manufacturing the same 有权
标题翻译：具有锥形圆柱形存储节点的电容器及其制造方法
公开(公告)号：US07723183B2
公开(公告)日：2010-05-25
申请号：US12499248
申请日：2009-07-08
申请人： Ho Jin Cho , Cheol Hwan Park , Jae Soo Kim , Dong Kyun Lee
发明人： Ho Jin Cho , Cheol Hwan Park , Jae Soo Kim , Dong Kyun Lee
IPC分类号： H01L21/02
CPC分类号： H01L28/65 , H01L27/10852 , H01L28/91
摘要： A capacitor is made by forming a buffer oxide layer, an etching stop layer, and a mold insulation layer over a semiconductor substrate having a storage node contact plug. The mold insulation layer and the etching stop layer are etched to form a hole in an upper portion of the storage node contact plug. A tapering layer is deposited over the mold insulation layer including the hole. The tapering layer and the buffer oxide layer are etched back so that the tapering layer is remained only at the upper end portion of the etched hole. A metal storage node layer formed on the etched hole over the remaining tapering layer. The mold insulation layer and the remaining tapering layer are removed to form a cylindrical storage node having a tapered upper end. A dielectric layer and a plate node are formed over the storage node.
摘要翻译：通过在具有存储节点接触插塞的半导体衬底上形成缓冲氧化物层，蚀刻停止层和模具绝缘层来制造电容器。蚀刻模具绝缘层和蚀刻停止层，以在存储节点接触插塞的上部形成孔。在包括孔的模具绝缘层上沉积渐缩层。锥形层和缓冲氧化物层被回蚀刻，使得锥形层仅保留在蚀刻孔的上端部。在剩余的锥形层上形成在蚀刻孔上的金属储存节点层。去除模具绝缘层和剩余的锥形层以形成具有锥形上端的圆柱形存储节点。在存储节点上形成介电层和板状节点。

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