专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

31. 发明授权

US5624689A Foil blowing apparatus for thermoplastic synthetic resins 失效
标题翻译：用于热塑性合成树脂的吹塑设备
公开(公告)号：US5624689A
公开(公告)日：1997-04-29
申请号：US488662
申请日：1995-06-08
申请人： Stefan Schmitz , Joachim Lange , Robert Wirtz
发明人： Stefan Schmitz , Joachim Lange , Robert Wirtz
IPC分类号： B29C47/88 , B29C47/22
CPC分类号： B29C47/8825 , B29C47/0026
摘要： A foil blowing head for a thermoplastic synthetic resin tube has a primary air guide juxtaposed with the blowing head portion defining the internal primary air outlet, also formed with passages for the secondary air and is axially shiftable on the discharge tube from which air is led from the foil balloon.
摘要翻译：用于热塑性合成树脂管的吹塑头具有与限定内部主要空气出口的吹风头部分并置的主要空气引导件，其也形成有用于二次空气的通道，并且在排出管上轴向移动，空气从该空气引导从箔气球。

32. 发明授权

US08586482B2 Film stack including metal hardmask layer for sidewall image transfer fin field effect transistor formation 有权
标题翻译：薄膜堆叠包括用于侧壁图像转移翅片场效应晶体管形成的金属硬掩模层
公开(公告)号：US08586482B2
公开(公告)日：2013-11-19
申请号：US13171868
申请日：2011-06-29
申请人： John C. Arnold , Sivananda K. Kanakasabapathy , Stefan Schmitz , Yunpeng Yin
发明人： John C. Arnold , Sivananda K. Kanakasabapathy , Stefan Schmitz , Yunpeng Yin
IPC分类号： H01L21/311
CPC分类号： H01L21/3088 , H01L21/3086 , H01L21/845 , H01L29/66795
摘要： A method for formation of a fin field effect transistor (FinFET) device includes forming a mandrel mask on a metal hardmask layer of a film stack, the film stack including a silicon on insulator (SOI) layer located underneath the metal hardmask layer; forming a large feature (FX) mask on the metal hardmask layer; etching the mandrel mask and the FX mask simultaneously into the metal hardmask layer; etching the mandrel mask and the FX mask into the SOI layer using the etched metal hardmask layer as a mask.
摘要翻译：用于形成鳍状场效应晶体管（FinFET）器件的方法包括在膜堆叠的金属硬掩模层上形成心轴掩模，所述膜堆叠包括位于金属硬掩模层下面的绝缘体上硅层（SOI）层; 在金属硬掩模层上形成大特征（FX）掩模; 将芯棒掩模和FX掩模同时蚀刻到金属硬掩模层中; 使用蚀刻的金属硬掩模层作为掩模将芯棒掩模和FX掩模刻蚀成SOI层。

33. 发明授权

US08580692B2 Film stack including metal hardmask layer for sidewall image transfer fin field effect transistor formation 失效
标题翻译：薄膜堆叠包括用于侧壁图像转移翅片场效应晶体管形成的金属硬掩模层
公开(公告)号：US08580692B2
公开(公告)日：2013-11-12
申请号：US13171865
申请日：2011-06-29
申请人： John C. Arnold , Sivananda K. Kanakasabapathy , Stefan Schmitz , Yunpeng Yin
发明人： John C. Arnold , Sivananda K. Kanakasabapathy , Stefan Schmitz , Yunpeng Yin
IPC分类号： H01L21/311
CPC分类号： H01L21/3086 , H01L21/3088 , H01L21/845
摘要： A method for formation of a fin field effect transistor (FinFET) device includes forming a mandrel mask and a large feature (FX) mask on a metal hardmask layer of a film stack, the film stack including a silicon on insulator (SOI) layer located underneath the metal hardmask layer; etching the mandrel mask and the FX mask simultaneously into the metal hardmask layer; and etching the mandrel mask and the FX mask into the SOI layer using the etched metal hardmask layer as a mask.
摘要翻译：一种用于形成鳍状场效应晶体管（FinFET）器件的方法包括在膜堆叠的金属硬掩模层上形成心轴掩模和大特征（FX）掩模，所述膜堆叠包括位于绝缘体上的硅（SOI）层金属硬掩模层下面; 将芯棒掩模和FX掩模同时蚀刻到金属硬掩模层中; 并使用蚀刻的金属硬掩模层作为掩模将芯棒掩模和FX掩模蚀刻到SOI层中。

34. 发明授权

US08536630B2 Transistor devices and methods of making 有权
标题翻译：晶体管器件及其制造方法
公开(公告)号：US08536630B2
公开(公告)日：2013-09-17
申请号：US13301274
申请日：2011-11-21
申请人： John C. Arnold , Xuefeng Hua , Rangarajan Jagannathan , Stefan Schmitz
发明人： John C. Arnold , Xuefeng Hua , Rangarajan Jagannathan , Stefan Schmitz
IPC分类号： H01L29/772
CPC分类号： H01L29/78 , H01L29/165 , H01L29/66636 , H01L29/7848
摘要： In an embodiment, a method of fabricating a transistor device comprises: providing a semiconductor topography comprising a gate conductor disposed above a semiconductor substrate between a pair of dielectric spacers; anisotropically etching exposed regions of the semiconductor substrate on opposite sides of the dielectric spacers to form recessed regions in the substrate; oxidizing exposed surfaces of the substrate in the recessed regions to form an oxide thereon; removing the oxide from bottoms of the recessed regions while retaining the oxide upon sidewalls of the recessed regions; and isotropically etching the substrate such that the recessed regions undercut the pair of dielectric spacers.
摘要翻译：在一个实施例中，制造晶体管器件的方法包括：提供半导体形貌，其包括设置在一对电介质间隔物之间的半导体衬底之上的栅极导体; 各向异性地蚀刻介电间隔物的相对侧上的半导体衬底的暴露区域，以在衬底中形成凹陷区域; 在所述凹陷区域中氧化所述衬底的暴露表面以在其上形成氧化物; 从凹陷区域的底部除去氧化物，同时将氧化物保持在凹陷区域的侧壁上; 并且各向同性蚀刻所述基板，使得所述凹陷区域切割所述一对电介质间隔物。

35. 发明授权

US08139204B2 Distance-measuring optoelectronic sensor 有权
标题翻译：距离测量光电传感器
公开(公告)号：US08139204B2
公开(公告)日：2012-03-20
申请号：US12825433
申请日：2010-06-29
申请人： Ingolf Braune , Markus Hammes , Stefan Schmitz , Shane MacNamara
发明人： Ingolf Braune , Markus Hammes , Stefan Schmitz , Shane MacNamara
IPC分类号： G01C3/08
CPC分类号： F16P3/144 , F16P3/142 , G01B11/00 , G01B11/026 , G01C3/14 , G01S17/026 , G01S17/42 , G01S17/89 , G06K9/00771 , G06K9/2027
摘要： A distance-measuring optoelectronic sensor for the monitoring of a working zone is provided which is located within a detection zone of the sensor and at a first distance from the sensor, wherein the sensor has a lighting unit having a light source to illuminate the working zone at least partly as well as an object detection unit by means of which unauthorized objects in the working zone can be detected. In this respect, an illumination control is designed, in a switching-on phase, first to activate the lighting unit with a lower power so that a provisional working zone at a second distance from the sensor less than the first distance is illuminated with at most a preset maximum power; to check by means of the object detection unit whether an unauthorized object intrusion is taking place into the provisional working zone; and if no unauthorized object intrusion is recognized, to activate the lighting unit at a higher power so that the working zone is illuminated with at most the preset maximum power.
摘要翻译：提供了用于监测工作区域的测距光电传感器，其位于传感器的检测区域内并距传感器第一距离处，其中传感器具有照明单元，该照明单元具有照亮工作区域的光源至少部分地以及物体检测单元，通过该物体检测单元可以检测到工作区域中的未经授权的物体。在这方面，照明控制在接通阶段首先被设计成以较低的功率激活照明单元，使得距传感器小于第一距离的第二距离处的临时工作区最多被照亮预设最大功率; 通过对象检测单元检查临时工作区内是否有未经授权的对象入侵; 并且如果未识别到未经授权的对象入侵，则以较高功率激活照明单元，使得工作区域以最多预设的最大功率被照亮。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式