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31. 发明授权

US08541869B2 Cleaved facet (Ga,Al,In)N edge-emitting laser diodes grown on semipolar bulk gallium nitride substrates 有权
标题翻译：在半极主体氮化镓衬底上生长的切割面（Ga，Al，In）N边缘发射激光二极管
公开(公告)号：US08541869B2
公开(公告)日：2013-09-24
申请号：US12030099
申请日：2008-02-12
申请人： Shuji Nakamura , James S. Speck , Steven P. DenBaars , Anurag Tyagi
发明人： Shuji Nakamura , James S. Speck , Steven P. DenBaars , Anurag Tyagi
IPC分类号： H01L33/16
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0202 , H01S5/22 , H01S5/2201 , H01S5/3216
摘要： A III-nitride edge-emitting laser diode is formed on a surface of a III-nitride substrate having a semipolar orientation, wherein the III-nitride substrate is cleaved by creating a cleavage line along a direction substantially perpendicular to a nonpolar orientation of the III-nitride substrate, and then applying force along the cleavage line to create one or more cleaved facets of the III-nitride substrate, wherein the cleaved facets have an m-plane or a-plane orientation.
摘要翻译：在具有半极性取向的III族氮化物衬底的表面上形成III族氮化物边缘发射激光二极管，其中通过沿着基本上垂直于III的非极性取向的方向产生裂解线来切割III族氮化物衬底氮化物衬底，然后沿着切割线施加力以产生III族氮化物衬底的一个或多个切割面，其中所述切割面具有m面或平面取向。

32. 发明授权

US08278128B2 Enhancement of optical polarization of nitride light-emitting diodes by wafer off-axis cut 失效
标题翻译：通过晶片离轴切割增强氮化物发光二极管的光学偏振
公开(公告)号：US08278128B2
公开(公告)日：2012-10-02
申请号：US12364272
申请日：2009-02-02
申请人： Hisashi Masui , Hisashi Yamada , Kenji Iso , Asako Hirai , Makoto Saito , James S. Speck , Shuji Nakamura , Steven P. DenBaars
发明人： Hisashi Masui , Hisashi Yamada , Kenji Iso , Asako Hirai , Makoto Saito , James S. Speck , Shuji Nakamura , Steven P. DenBaars
IPC分类号： H01L21/00
CPC分类号： H01L33/32 , H01L33/16
摘要： An off-axis cut of a nonpolar III-nitride wafer towards a polar (−c) orientation results in higher polarization ratios for light emission than wafers without such off-axis cuts. A 5° angle for an off-axis cut has been confirmed to provide the highest polarization ratio (0.9) than any other examined angles for off-axis cuts between 0° and 27°.
摘要翻译：非极性III族氮化物晶片向极（-c）取向的偏轴切割导致比没有这种离轴切割的晶片更高的发光偏振比。已经确认了用于离轴切割的5°角，以提供比在0°和27°之间的离轴切割的任何其它检查角度最高的偏振比（0.9）。

33. 发明申请

US20120180868A1 III-NITRIDE FLIP-CHIP SOLAR CELLS 审中-公开
标题翻译： III-NITRIDE FLIP-CHIP太阳能电池
公开(公告)号：US20120180868A1
公开(公告)日：2012-07-19
申请号：US13279131
申请日：2011-10-21
申请人： Robert M. Farrell , Carl J. Neufeld , Nikholas G. Toledo , Steven P. DenBaars , Umesh K. Mishra , James S. Speck , Shuji Nakamura
发明人： Robert M. Farrell , Carl J. Neufeld , Nikholas G. Toledo , Steven P. DenBaars , Umesh K. Mishra , James S. Speck , Shuji Nakamura
IPC分类号： H01L31/0264 , H01L31/18
CPC分类号： H01L31/02363 , H01L31/02366 , H01L31/056 , H01L31/0735 , H01L31/075 , H01L31/076 , H01L31/1848 , H01L31/1852 , Y02E10/52 , Y02E10/544 , Y02E10/548 , Y02P70/521
摘要： A III-nitride photovoltaic device structure and method for fabricating the III-nitride photovoltaic device that increases the light collection efficiency of the III-nitride photovoltaic device. The III-nitride photovoltaic device includes one or more III-nitride device layers, and the III-nitride photovoltaic device functions by collecting light that is incident on the back-side of the III-nitride device layers. The III-nitride device layers are grown on a substrate, wherein the III-nitride device layers are exposed when the substrate is removed and the exposed III-nitride device layers are then intentionally roughened to enhance their light collection efficiency. The collection of the incident light via the back-side of the device simplifies the fabrication of the multiple junctions in the device. The III-nitride photovoltaic device may include grid-like contacts, transparent or semi-transparent contacts, or reflective contacts.
摘要翻译：用于制造III族氮化物光伏器件的III族氮化物光伏器件结构和方法，其增加了III族氮化物光伏器件的光收集效率。 III族氮化物光伏器件包括一个或多个III族氮化物器件层，并且III族氮化物光伏器件通过收集入射在III族氮化物器件层的背面上的光而起作用。 III族氮化物器件层在衬底上生长，其中当除去衬底时，III族氮化物器件层被暴露，然后有意地暴露暴露的III族氮化物器件层以增强它们的光收集效率。通过设备背面的入射光的收集简化了器件中多个结的制造。 III族氮化物光伏器件可以包括格栅状触点，透明或半透明触点或反射触点。

34. 发明授权

US08178373B2 Metalorganic chemical vapor deposition (MOCVD) growth of high performance non-polar III-nitride optical devices 有权
标题翻译：金属有机化学气相沉积（MOCVD）生长的高性能非极性III族氮化物光学器件
公开(公告)号：US08178373B2
公开(公告)日：2012-05-15
申请号：US12914906
申请日：2010-10-28
申请人： Mathew C. Schmidt , Kwang Choong Kim , Hitsohi Sato , Steven P. DenBaars , James S. Speck , Shuji Nakamura
发明人： Mathew C. Schmidt , Kwang Choong Kim , Hitsohi Sato , Steven P. DenBaars , James S. Speck , Shuji Nakamura
IPC分类号： H01L21/00 , H01L33/00
CPC分类号： H01L33/0075 , B82Y20/00 , H01L21/0237 , H01L21/02389 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01S5/34333 , H01S2304/04
摘要： A method of device growth and p-contact processing that produces improved performance for non-polar III-nitride light emitting diodes and laser diodes. Key components using a low defect density substrate or template, thick quantum wells, a low temperature p-type III-nitride growth technique, and a transparent conducting oxide for the electrodes.
摘要翻译：一种器件生长和p接触处理的方法，其产生非极性III族氮化物发光二极管和激光二极管的改善的性能。使用低缺陷密度衬底或模板的关键组件，厚量子阱，低温p型III族氮化物生长技术和用于电极的透明导电氧化物。

35. 发明授权

US08044383B2 Thin P-type gallium nitride and aluminum gallium nitride electron-blocking layer free gallium nitride-based light emitting diodes 失效
标题翻译：薄型P型氮化镓和氮化镓铝电子阻挡层，无氮化镓基发光二极管
公开(公告)号：US08044383B2
公开(公告)日：2011-10-25
申请号：US12611063
申请日：2009-11-02
申请人： Hong Zhong , Anurag Tyagi , James S. Speck , Steven P. DenBaars , Shuji Nakamura
发明人： Hong Zhong , Anurag Tyagi , James S. Speck , Steven P. DenBaars , Shuji Nakamura
IPC分类号： H01L29/06 , H01L31/00
CPC分类号： H01L33/18 , H01L33/02
摘要： A light emitting diode (LED) having a p-type layer having a thickness of 100 nm or less, an n-type layer, and an active layer, positioned between the p-type layer and the n-type layer, for emitting light, wherein the LED does not include a separate electron blocking layer.
摘要翻译：具有厚度为100nm以下的p型层的发光二极管（LED），位于p型层和n型层之间的n型层和有源层，用于发光，其中LED不包括单独的电子阻挡层。

36. 发明授权

US07956371B2 High efficiency light emitting diode (LED) 有权
标题翻译：高效率发光二极管（LED）
公开(公告)号：US07956371B2
公开(公告)日：2011-06-07
申请号：US11608439
申请日：2006-12-08
申请人： Steven P. DenBaars , Shuji Nakamura , James S. Speck
发明人： Steven P. DenBaars , Shuji Nakamura , James S. Speck
IPC分类号： H01L33/38
CPC分类号： H01L33/20 , G02B6/0018 , H01L33/507 , H01L33/508 , H01L33/58 , H01L33/60 , H01L2933/0091
摘要： An (Al, Ga, In)N light emitting diode (LED), wherein light extraction from chip and/or phosphor conversion layer is optimized. By novel shaping of LED and package optics, a high efficiency light emitting diode is achieved.
摘要翻译：一种（Al，Ga，In）N发光二极管（LED），其中从芯片和/或磷光体转换层的光提取被优化。通过LED和封装光学器件的新颖成形，实现了高效率的发光二极管。

37. 发明申请

US20110037052A1 METALORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD) GROWTH OF HIGH PERFORMANCE NON-POLAR III-NITRIDE OPTICAL DEVICES 有权
标题翻译：金属化学气相沉积（MOCVD）高性能非极性III-NITRIDE光学器件的生长
公开(公告)号：US20110037052A1
公开(公告)日：2011-02-17
申请号：US12914906
申请日：2010-10-28
申请人： Mathew C. Schmidt , Kwang Choong Kim , Hitsohi Sato , Steven P. DenBaars , James S. Speck , Shuji Nakamura
发明人： Mathew C. Schmidt , Kwang Choong Kim , Hitsohi Sato , Steven P. DenBaars , James S. Speck , Shuji Nakamura
IPC分类号： H01L33/04 , H01L33/32
CPC分类号： H01L33/0075 , B82Y20/00 , H01L21/0237 , H01L21/02389 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01S5/34333 , H01S2304/04
摘要： A method of device growth and p-contact processing that produces improved performance for non-polar III-nitride light emitting diodes and laser diodes. Key components using a low defect density substrate or template, thick quantum wells, a low temperature p-type III-nitride growth technique, and a transparent conducting oxide for the electrodes.
摘要翻译：一种器件生长和p接触处理的方法，其产生非极性III族氮化物发光二极管和激光二极管的改善的性能。使用低缺陷密度衬底或模板的关键组件，厚量子阱，低温p型III族氮化物生长技术和用于电极的透明导电氧化物。

38. 发明申请

US20100283078A1 TRANSPARENT MIRRORLESS LIGHT EMITTING DIODE 审中-公开
标题翻译：透明无光发光二极管
公开(公告)号：US20100283078A1
公开(公告)日：2010-11-11
申请号：US12836348
申请日：2010-07-14
申请人： Steven P. DenBaars , Shuji Nakamura , James S. Speck
发明人： Steven P. DenBaars , Shuji Nakamura , James S. Speck
IPC分类号： H01L33/58 , H01L33/48
CPC分类号： H01L33/22 , H01L33/32 , H01L33/54 , H01L33/60 , H01L2224/16245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/49109 , H01L2924/00014 , H01L2924/00
摘要： An (Al, Ga, In)N light emitting diode (LED) in which multi-directional light can be extracted from one or more surfaces of the LED before entering a shaped optical element and subsequently being extracted to air. In particular, the (Al, Ga, In)N and transparent contact layers (such as ITO or ZnO) are embedded in or combined with a shaped optical element, which may be an epoxy, glass, silicon or other material molded into a sphere or inverted cone shape, wherein most of the light entering the inverted cone shape lies within a critical angle and is extracted. The present invention also minimizes internal reflections within the LED by eliminating mirrors and/or mirrored surfaces, in order to minimize re-absorption of the LED's light by the emitting layer (or the active layer) of the LED. To assist in minimizing internal reflections, transparent electrodes, such as ITO or ZnO, may be used. Surface roughening by patterning or anisotropically etching (i.e., creating microcones) may also assist in light extraction, as well as minimizing internal reflections.
摘要翻译：一种（Al，Ga，In）N发光二极管（LED），其中可以在进入成形光学元件之前随后将其提取到空气中，从LED的一个或多个表面提取多方向光。特别地，（Al，Ga，In）N和透明接触层（例如ITO或ZnO）嵌入或与成形的光学元件组合，其可以是模制成球体的环氧树脂，玻璃，硅或其它材料或倒锥形，其中进入倒锥形的大部分光处于临界角内并被提取。本发明还通过消除反射镜和/或镜像表面来最小化LED内的内部反射，以便通过LED的发射层（或有源层）使LED的光的再吸收最小化。为了帮助最小化内部反射，可以使用透明电极，例如ITO或ZnO。通过图案化或各向异性蚀刻（即，制造微孔）的表面粗糙化也可以有助于光提取，以及最小化内部反射。

39. 发明授权

US07781789B2 Transparent mirrorless light emitting diode 有权
标题翻译：透明无反射镜发光二极管
公开(公告)号：US07781789B2
公开(公告)日：2010-08-24
申请号：US11940898
申请日：2007-11-15
申请人： Steven P. DenBaars , Shuji Nakamura , James S. Speck
发明人： Steven P. DenBaars , Shuji Nakamura , James S. Speck
IPC分类号： H01L29/22 , H01L29/227 , H01L33/00 , H01L29/24 , H01L29/18 , H01L21/00
CPC分类号： H01L33/22 , H01L33/32 , H01L33/54 , H01L33/60 , H01L2224/16245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/49109 , H01L2924/00014 , H01L2924/00
摘要： An (Al, Ga, In)N light emitting diode (LED) in which multi-directional light can be extracted from one or more surfaces of the LED before entering a shaped optical element and subsequently being extracted to air. In particular, the (Al, Ga, In)N and transparent contact layers (such as ITO or ZnO) are embedded in or combined with a shaped optical element, which may be an epoxy, glass, silicon or other material molded into a sphere or inverted cone shape, wherein most of the light entering the inverted cone shape lies within a critical angle and is extracted. The present invention also minimizes internal reflections within the LED by eliminating mirrors and/or mirrored surfaces, in order to minimize re-absorption of the LED's light by the emitting layer (or the active layer) of the LED. To assist in minimizing internal reflections, transparent electrodes, such as ITO or ZnO, may be used. Surface roughening by patterning or anisotropically etching (i.e., creating microcones) may also assist in light extraction, as well as minimizing internal reflections.
摘要翻译：一种（Al，Ga，In）N发光二极管（LED），其中可以在进入成形光学元件之前随后将其提取到空气中，从LED的一个或多个表面提取多方向光。特别地，（Al，Ga，In）N和透明接触层（例如ITO或ZnO）嵌入或与成形的光学元件组合，其可以是模制成球体的环氧树脂，玻璃，硅或其它材料或倒锥形，其中进入倒锥形的大部分光处于临界角内并被提取。本发明还通过消除反射镜和/或镜像表面来最小化LED内的内部反射，以便通过LED的发射层（或有源层）使LED的光的再吸收最小化。为了帮助最小化内部反射，可以使用透明电极，例如ITO或ZnO。通过图案化或各向异性蚀刻（即，制造微孔）的表面粗糙化也可以有助于光提取，以及最小化内部反射。

40. 发明授权

US07338828B2 Growth of planar non-polar {1 -1 0 0} m-plane gallium nitride with metalorganic chemical vapor deposition (MOCVD) 有权
标题翻译：用金属有机化学气相沉积（MOCVD）生长平面非极性{1 -1 0 0} m面氮化镓
公开(公告)号：US07338828B2
公开(公告)日：2008-03-04
申请号：US11444083
申请日：2006-05-31
申请人： Bilge M. Imer , James S. Speck , Steven P. DenBaars , Shuji Nakamura
发明人： Bilge M. Imer , James S. Speck , Steven P. DenBaars , Shuji Nakamura
IPC分类号： H01L21/00
CPC分类号： H01L21/02658 , C30B25/02 , C30B25/18 , C30B29/403 , C30B29/406 , H01L21/02378 , H01L21/02389 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/02516 , H01L21/0254 , H01L21/02609 , H01L21/0262
摘要： A method of growing planar non-polar m-plane III-Nitride material, such as an m-plane gallium nitride (GaN) epitaxial layer, wherein the III-Nitride material is grown on a suitable substrate, such as an m-plane silicon carbide (m-SiC) substrate, using metalorganic chemical vapor deposition (MOCVD). The method includes performing a solvent clean and acid dip of the substrate to remove oxide from the surface, annealing the substrate, growing a nucleation layer such as an aluminum nitride (AlN) on the annealed substrate, and growing the non-polar m-plane III-Nitride epitaxial layer on the nucleation layer using MOCVD.
摘要翻译：生长平面非极性m面III-氮化物材料的方法，例如m面氮化镓（GaN）外延层，其中III-氮化物材料生长在合适的衬底上，例如m面硅碳化物（m-SiC）基板，使用金属有机化学气相沉积（MOCVD）。该方法包括进行溶剂清洁和浸渍基底以从表面除去氧化物，退火基板，在退火的基板上生长诸如氮化铝（AlN）的成核层，以及生长非极性m面使用MOCVD在成核层上的III-氮化物外延层。

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