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31. 发明授权

US08513626B2 Method and apparatus for reducing patterning effects on a substrate during radiation-based heating 有权
标题翻译：用于在基于辐射的加热期间减少对基板的图案化影响的方法和装置
公开(公告)号：US08513626B2
公开(公告)日：2013-08-20
申请号：US11622908
申请日：2007-01-12
申请人： Balasubramanian Ramachandran , Joseph Michael Ranish , Aaron Muir Hunter
发明人： Balasubramanian Ramachandran , Joseph Michael Ranish , Aaron Muir Hunter
IPC分类号： G02B5/00
CPC分类号： H01L21/67248 , H01L21/67115
摘要： Patterning effects on a substrate are reduced during radiation-based heating by filtering the radiation source or configuring the radiation source to produce radiation having different spectral characteristics. For the filtering, an optical filter may be used to truncate specific wavelengths of the radiation. The different configurations of the radiation source include a combination of one or more continuum radiation sources with one or more discrete spectrum sources, a combination of multiple discrete spectrum sources, or a combination of multiple continuum radiation sources. Furthermore, one or more of the radiation sources may be configured to have a substantially non-normal angle of incidence or polarized to reduce patterning effects on a substrate during radiation-based heating.
摘要翻译：通过过滤辐射源或配置辐射源产生具有不同光谱特性的辐射，在基于辐射的加热过程中，对衬底的图案化效果降低。为了滤波，可以使用滤光器来截断辐射的特定波长。辐射源的不同配置包括一个或多个连续辐射源与一个或多个离散光谱源，多个离散光谱源的组合或多个连续辐射源的组合的组合。此外，一个或多个辐射源可以被配置为具有基本上非正常的入射角或极化，以减少基于辐射的加热期间对衬底的图案化效应。

32. 发明申请

US20110230060A1 METHOD OF IMPROVING OXIDE GROWTH RATE OF SELECTIVE OXIDATION PROCESSES 有权
标题翻译：改善选择性氧化过程氧化生长速率的方法
公开(公告)号：US20110230060A1
公开(公告)日：2011-09-22
申请号：US13117931
申请日：2011-05-27
申请人： Yoshitaka Yokota , Norman Tam , Balasubramanian Ramachandran , Martin John Ripley
发明人： Yoshitaka Yokota , Norman Tam , Balasubramanian Ramachandran , Martin John Ripley
IPC分类号： H01L21/316
CPC分类号： H01L21/02238 , H01L21/0223 , H01L21/02255 , H01L21/28247 , H01L21/31662 , H01L21/32
摘要： A method for selective oxidation of silicon containing materials in a semiconductor device is disclosed and claimed. In one aspect, a rapid thermal processing apparatus is used to selectively oxidize a substrate by in-situ steam generation at high pressure in a hydrogen rich atmosphere. Other materials, such as metals and barrier layers, in the substrate are not oxidized.
摘要翻译：公开并要求保护半导体器件中含硅材料的选择性氧化的方法。一方面，快速热处理装置用于通过在富氢气氛中高压下原位蒸汽产生来选择性氧化基板。衬底中的其它材料，例如金属和阻挡层，不被氧化。

33. 发明授权

US07778533B2 Semiconductor thermal process control 有权
标题翻译：半导体热过程控制
公开(公告)号：US07778533B2
公开(公告)日：2010-08-17
申请号：US10243383
申请日：2002-09-12
申请人： Wolfgang R. Aderhold , Balasubramanian Ramachandran , Leonid M. Tertitski , Patrick F. Stone
发明人： Wolfgang R. Aderhold , Balasubramanian Ramachandran , Leonid M. Tertitski , Patrick F. Stone
IPC分类号： F26B3/30 , F27B5/14
CPC分类号： H01L21/67248 , H01L21/67115
摘要： During fabrication, a rotating semiconductor substrate is radiated in accordance with a thermal recipe. Temperature measurements of the semiconductor substrate are obtained along with the position of the semiconductor substrate at the time of each temperature measurement. It is then determined for the position of the semiconductor substrate whether at least one particular temperature measurement of the temperature measurements should be filtered. If so, at least one filtered temperature measurement is obtained. The radiation of the semiconductor substrate is subsequently controlled based on the temperature measurements, the at least one filtered temperature measurement, and the thermal recipe.
摘要翻译：在制造期间，根据热配方照射旋转的半导体衬底。半导体衬底的温度测量结果与每个温度测量时的半导体衬底的位置一起获得。然后确定半导体衬底的位置是否应过滤温度测量的至少一个特定温度测量。如果是这样，则获得至少一个过滤的温度测量值。随后基于温度测量，至少一个过滤温度测量和热配方控制半导体衬底的辐射。

34. 发明授权

US07515929B2 Receiver for a multimode radio 有权
标题翻译：接收机用于多模式无线电
公开(公告)号：US07515929B2
公开(公告)日：2009-04-07
申请号：US11116086
申请日：2005-04-27
申请人： Balasubramanian Ramachandran , John E. Vasa , Tudor Lipan , Norman J Beamish
发明人： Balasubramanian Ramachandran , John E. Vasa , Tudor Lipan , Norman J Beamish
IPC分类号： H04M1/00
CPC分类号： H04B1/707 , H04B1/0067 , H04B2201/70711
摘要： A receiver for a multi-mode wireless device is provided. The receiver has multiple analog RF front end modules, with each module supporting a different mode of operation. The receiver has a single digital backend module for generating a digital baseband signal. A controller selects one of the available RF modules to use, and the selected RF module provides an analog communication signal to the digital backend. Each available mode has an associated set of factors. When a particular mode is selected, the set of factors associated with the selected mode is provided to the digital backend. The digital backend uses these factors to adjust the processing characteristics of its components, such as its analog to digital converter, filters, and gain controller. In this way, the single digital backend is adaptable to the requirements of each of the available radio modes.
摘要翻译：提供了一种用于多模式无线设备的接收机。接收器具有多个模拟RF前端模块，每个模块支持不同的操作模式。接收器具有用于产生数字基带信号的单个数字后端模块。控制器选择可使用的RF模块之一，并且所选择的RF模块向数字后端提供模拟通信信号。每个可用模式都有一组相关的因素。当选择特定模式时，将与所选模式相关联的因子集提供给数字后端。数字后端使用这些因素来调整其组件的处理特性，例如其模数转换器，滤波器和增益控制器。以这种方式，单个数字后端可以适应每个可用无线电模式的要求。

35. 发明授权

US07112763B2 Method and apparatus for low temperature pyrometry useful for thermally processing silicon wafers 有权
标题翻译：用于热处理硅晶片的低温高温法的方法和装置
公开(公告)号：US07112763B2
公开(公告)日：2006-09-26
申请号：US10974003
申请日：2004-10-26
申请人： Aaron Hunter , Rajesh S. Ramanujam , Balasubramanian Ramachandran , Corina Elena Tanasa , Tarpan Dixit
发明人： Aaron Hunter , Rajesh S. Ramanujam , Balasubramanian Ramachandran , Corina Elena Tanasa , Tarpan Dixit
IPC分类号： F27D11/00
CPC分类号： F27B17/0025 , F27B5/04 , F27D21/0014 , H01L21/67115 , H01L21/67248 , H05B3/68
摘要： A rapid thermal processing (RTP) system including a transmission pyrometer monitoring the temperature dependent absorption of the silicon wafer for radiation from the RTP lamps at a reduced power level. A look-up table is created relating unnormalized values of photodetector photocurrents with wafer and radiant lamp temperatures. A calibrating step measures the photocurrent with known wafer and lamp temperatures and all photocurrents measured thereafter are accordingly normalized. The transmission pyrometer may be used for closed loop control for thermal treatments below 500° C. or used in the pre-heating phase for a higher temperature process including radiation pyrometry in closed loop control. The pre-heating temperature ramp rate may be controlled by measuring the initial ramp rate and readjusting the lamp power accordingly. Radiation and transmission pyrometers may be included in an integrated structure with a beam splitter dividing radiation from the wafer.
摘要翻译：快速热处理（RTP）系统，其包括透射高温计，其以降低的功率水平监测来自RTP灯的辐射的硅晶片的温度依赖性吸收。创建了与晶圆和辐射灯温度相关的光电检测器光电流的非标准化值的查找表。校准步骤测量具有已知晶片和灯温度的光电流，并且随后测量的所有光电流相应地被归一化。传输高温计可用于低于500°C的热处理的闭环控制，或用于预热阶段，用于更高温度的过程，包括闭环控制中的辐射高温计。可以通过测量初始斜坡速率并相应地重新调整灯泡功率来控制预热温度升高速率。辐射和透射高温计可以包括在具有分束器的分离器的集成结构中。

36. 发明申请

US20050102108A1 Tailored temperature uniformity 失效
标题翻译：定制温度均匀性
公开(公告)号：US20050102108A1
公开(公告)日：2005-05-12
申请号：US10950145
申请日：2004-09-24
申请人： Balasubramanian Ramachandran , Joseph Ranish , Ravi Jallepally , Sundar Ramamurthy , Raman Achutharaman , Brian Haas , Aaron Hunter
发明人： Balasubramanian Ramachandran , Joseph Ranish , Ravi Jallepally , Sundar Ramamurthy , Raman Achutharaman , Brian Haas , Aaron Hunter
IPC分类号： H01L21/00 , G01N31/00
CPC分类号： H01L21/67103
摘要： Method and apparatus for obtaining a tailored heat transfer profile in a chamber housing a microprocessor manufacturing process, including estimating heat transfer properties of the chamber; estimating heat absorptive properties of a wafer; adjusting the physical characteristics of the chamber to correct the heat transfer properties; and utilizing the chamber for manufacturing microprocessors.
摘要翻译：用于在容纳微处理器制造过程的腔室中获得定制的传热轮廓的方法和装置，包括估计腔室的传热特性; 估计晶片的吸热性能; 调整室的物理特性以校正传热性能; 并利用该腔室制造微处理器。

37. 发明授权

US06560446B2 Dynamically varying linearity system for an RF front-end of a communication device 失效
标题翻译：用于通信设备的RF前端的动态变化的线性系统
公开(公告)号：US06560446B2
公开(公告)日：2003-05-06
申请号：US09811082
申请日：2001-03-16
申请人： Balasubramanian Ramachandran
发明人： Balasubramanian Ramachandran
IPC分类号： H04Q720
CPC分类号： H04W52/267 , H03G3/004 , H03G3/3042 , H03G2201/103 , H03G2201/307 , H03G2201/40 , H03G2201/508 , H04B1/109 , H04L1/0001 , H04W52/08 , H04W52/38
摘要： A dynamically varying linearity system “DVLS” capable of varying the linearity of a radio frequency (RF) front-end of a communication device responsive to receiving a condition signal indicating a desired mode of operation of a transmitter. The DVLS may include a condition signal indicative of the desired mode of operation and a controller that adjusts the linearity of the transmitter responsive to the condition signal. The condition signal may be responsive to a user interface. The controller, responsive to the condition signal, may dynamically adjust the operating current of the transmitter.
摘要翻译：一种动态变化的线性系统“DVLS”，其能够响应于接收到指示发射机的所需操作模式的条件信号而改变通信设备的射频（RF）前端的线性度。 DVLS可以包括指示期望的操作模式的条件信号和响应于条件信号来调整发射机的线性度的控制器。条件信号可以响应于用户界面。控制器响应于条件信号，可以动态地调整发射机的工作电流。

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