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31. 发明授权

US09947578B2 Methods for forming low-resistance contacts through integrated process flow systems 有权
公开(公告)号：US09947578B2
公开(公告)日：2018-04-17
申请号：US15358690
申请日：2016-11-22
申请人： APPLIED MATERIALS, INC.
发明人： Yu Lei , Vikash Banthia , Kai Wu , Xinyu Fu , Yi Xu , Kazuya Daito , Feiyue Ma , Pulkit Agarwal , Chi-Chou Lin , Dien-Yeh Wu , Guoqiang Jian , Wei V. Tang , Jonathan Bakke , Mei Chang , Sundar Ramamurthy
IPC分类号： H01L21/4763 , H01L21/768 , C23C16/44 , C23C16/455 , C23C16/46 , C23C16/52 , H01L21/311 , C23C16/02 , C23C16/04 , C23C16/06 , C23C16/08 , C23C16/505 , C23C16/54
CPC分类号： H01L21/76843 , C23C16/0227 , C23C16/0281 , C23C16/045 , C23C16/06 , C23C16/08 , C23C16/4401 , C23C16/45536 , C23C16/45544 , C23C16/46 , C23C16/505 , C23C16/52 , C23C16/54 , H01L21/31116 , H01L21/76802 , H01L21/76877
摘要： Methods for forming metal contacts having tungsten liner layers are provided herein. In some embodiments, a method of processing a substrate includes: exposing a substrate, within a first substrate process chamber, to a plasma formed from a first gas comprising a metal organic tungsten precursor gas or a fluorine-free tungsten halide precursor to deposit a tungsten liner layer, wherein the tungsten liner layer is deposited atop a dielectric layer and within a feature formed in a first surface of the dielectric layer of a substrate; transferring the substrate to a second substrate process chamber without exposing the substrate to atmosphere; and exposing the substrate to a second gas comprising a tungsten fluoride precursor to deposit a tungsten fill layer atop the tungsten liner layer.

32. 发明申请

US20180076020A1 In-Situ Pre-Clean For Selectivity Improvement For Selective Deposition 审中-公开
公开(公告)号：US20180076020A1
公开(公告)日：2018-03-15
申请号：US15699110
申请日：2017-09-08
申请人： Applied Materials, Inc.
发明人： Kai Wu , Vikash Banthia , Sang Ho Yu , Mei Chang , Feiyue Ma
IPC分类号： H01L21/02 , H01L21/285 , H01L23/532
CPC分类号： H01L21/02074 , H01L21/02068 , H01L21/02697 , H01L21/28556 , H01L21/28562 , H01L21/28568 , H01L21/76849 , H01L21/76883 , H01L23/53209 , H01L23/53238 , H01L23/53266
摘要： Methods to selectively deposit a film on a first surface (e.g., a metal surface) relative to a second surface (e.g., a dielectric surface) by exposing the surface to a pre-clean plasma comprising one or more of argon or hydrogen followed by deposition. The first surface and the second surface can be substantially coplanar. The selectivity of the deposited film may be increased by an order of magnitude relative to the substrate before exposure to the pre-cleaning plasma.

33. 发明授权

US09169556B2 Tungsten growth modulation by controlling surface composition 有权
标题翻译：通过控制表面组成的钨生长调节
公开(公告)号：US09169556B2
公开(公告)日：2015-10-27
申请号：US13968057
申请日：2013-08-15
申请人： Applied Materials, Inc.
发明人： Kai Wu , Kiejin Park , Sang Ho Yu , Sang-Hyeob Lee , Kazuya Daito , Joshua Collins , Benjamin C. Wang
IPC分类号： C23C16/08 , C23C16/14 , C23C16/50 , C23C16/452
CPC分类号： C23C16/452 , C23C16/08 , C23C16/50
摘要： A method for selectively controlling deposition rate of a catalytic material during a catalytic bulk CVD deposition is disclosed herein. The method can include positioning a substrate in a processing chamber including both surface regions and gap regions, depositing a first nucleation layer comprising tungsten conformally over an exposed surface of the substrate, treating at least a portion of the first nucleation layer with activated nitrogen, wherein the activated nitrogen is deposited preferentially on the surface regions, reacting a first deposition gas comprising tungsten halide and hydrogen-containing gas to deposit a tungsten fill layer preferentially in gap regions of the substrate, reacting a nucleation gas comprising a tungsten halide to form a second nucleation layer, and reacting a second deposition gas comprising tungsten halide and a hydrogen-containing gas to deposit a tungsten field layer.
摘要翻译：本文公开了一种用于在催化体积CVD沉积期间选择性地控制催化材料的沉积速率的方法。该方法可以包括将衬底定位在包括表面区域和间隙区域的处理室中，将包含钨的第一成核层保形地沉积在衬底的暴露表面上，用活性氮处理至少一部分第一成核层，其中将活化的氮优选沉积在表面区域上，使包含卤化钨和含氢气体的第一沉积气体优先沉积钨填充层以在衬底的间隙区域中反应，使包含卤化钨的成核气体反应形成第二使包含卤化钨和含氢气体的第二沉积气体反应以沉积钨场层。

34. 发明授权

US08900999B1 Low temperature high pressure high H2/WF6 ratio W process for 3D NAND application 有权
标题翻译：用于3D NAND应用的低温高压高H2 / WF6比W工艺
公开(公告)号：US08900999B1
公开(公告)日：2014-12-02
申请号：US14036157
申请日：2013-09-25
申请人： Applied Materials, Inc.
发明人： Kai Wu , Sang-Hyeob Lee , Joshua Collins , Kiejin Park
IPC分类号： H01L21/44 , H01L21/02
CPC分类号： H01L21/28079 , H01L21/76882 , H01L21/76883
摘要： A method of filling a feature in a substrate with tungsten without forming a seam is presented. The tungsten is deposited by a thermal chemical vapor deposition (CVD) process using hydrogen (H2) and tungsten hexafluoride (WF6) precursor gases. The H2 to WF6 flow rate ratio is greater than 40 to 1, such as from 40 to 1 to 100 to 1. The substrate temperature during deposition is less than 300 degrees Celsius (° C.) and the processing pressure during deposition is greater than 300 Torr.
摘要翻译：提出了一种在不形成接缝的情况下用钨填充衬底中的特征的方法。通过使用氢（H 2）和六氟化钨（WF 6）前体气体的热化学气相沉积（CVD）工艺来沉积钨。 H2至WF6流量比大于40至1，例如40至1至100至1.沉积过程中的基板温度低于300摄氏度（℃），沉积过程中的处理压力大于 300乇

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