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31. 发明授权

US07500397B2 Activated chemical process for enhancing material properties of dielectric films 有权
标题翻译：用于提高介电膜材料性能的活化化学工艺
公开(公告)号：US07500397B2
公开(公告)日：2009-03-10
申请号：US12023552
申请日：2008-01-31
申请人： Scott Jeffrey Weigel , Mark Leonard O'Neill , Raymond Nicholas Vrtis , Dino Sinatore
发明人： Scott Jeffrey Weigel , Mark Leonard O'Neill , Raymond Nicholas Vrtis , Dino Sinatore
IPC分类号： H01L21/311
CPC分类号： H01L21/3105 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02274
摘要： A method for restoring a dielectric constant of a layer of a silicon-containing dielectric material having a first dielectric constant and at least one surface, wherein the first dielectric constant of the layer of silicon-containing dielectric material has increased to a second dielectric constant, the method comprising the steps of: contacting the at least one surface of the layer of silicon-containing dielectric material with a silicon-containing fluid; and exposing the at least one surface of the layer of silicon-containing dielectric material to an energy source selected from the group consisting of: UV radiation, heat, and an electron beam, wherein the layer of silicon-containing dielectric material has a third dielectric constant that is lower than the second dielectric constant after exposing the layer of silicon-containing dielectric material to the energy source.
摘要翻译：一种用于恢复具有第一介电常数和至少一个表面的含硅介电材料层的介电常数的方法，其中所述含硅介电材料层的第一介电常数已经增加到第二介电常数，该方法包括以下步骤：使含硅介电材料层的至少一个表面与含硅流体接触; 以及将所述含硅介电材料层的所述至少一个表面暴露于选自以下的能量源：UV辐射，热和电子束，其中所述含硅介电材料层具有第三电介质常数，其在将含硅介电材料层暴露于能量源之后低于第二介电常数。

32. 发明授权

US06716770B2 Low dielectric constant material and method of processing by CVD 有权
标题翻译：低介电常数材料和通过CVD处理的方法
公开(公告)号：US06716770B2
公开(公告)日：2004-04-06
申请号：US09863150
申请日：2001-05-23
申请人： Mark Leonard O'Neill , Brian Keith Peterson , Jean Louise Vincent , Raymond Nicholas Vrtis
发明人： Mark Leonard O'Neill , Brian Keith Peterson , Jean Louise Vincent , Raymond Nicholas Vrtis
IPC分类号： C23C1640
CPC分类号： H01L21/02131 , C03C3/045 , C03C14/008 , C23C16/30 , C23C16/401 , H01L21/02203 , H01L21/02211 , H01L21/02216 , H01L21/02274 , H01L21/3122 , H01L21/3127 , H01L21/316 , H01L21/31633
摘要： Organofluorosilicate glass films contain both organic species and inorganic fluorines, exclusive of significant amounts of fluorocarbon species. Preferred films are represented by the formula SivOwCxHyFz, where v+w+x+y+z=100%, v is from 10 to 35 atomic %, w is from 10 to 65 atomic % y is from 10 to 50 atomic %, x is from 1 to 30 atomic %, z is from 0.1 to 15 atomic %, and x/z is optionally greater than 0.25, wherein substantially none of the fluorine is bonded to the carbon. A CVD method includes: (a) providing a substrate within a vacuum chamber; (b) introducing into the vacuum chamber gaseous reagents including a fluorine-providing gas, an oxygen-providing gas and at least one precursor gas selected from an organosilane and an organosiloxane; and (c) applying energy to the gaseous reagents in the chamber to induce reaction of the gaseous reagents and to form the film on the substrate.
摘要翻译：有机氟硅酸盐玻璃膜含有有机物质和无机氟，不含大量的碳氟化合物。优选的膜由式SivOwCxHyFz表示，其中v + w + x + y + z = 100％，v为10至35原子％，w为10至65原子％，y为10至50原子％，x 为1〜30原子％，z为0.1〜15原子％，x / z任选大于0.25，基本上没有氟与碳键合。 CVD方法包括：（a）在真空室内提供衬底; （b）在真空室中引入气体试剂，其中包括提供供气的气体，供氧气体和至少一种选自有机硅烷和有机硅氧烷的前体气体; 和（c）向室中的气态试剂施加能量以诱导气态试剂的反应并在基底上形成膜。

33. 发明授权

US06583048B2 Organosilicon precursors for interlayer dielectric films with low dielectric constants 有权
标题翻译：具有低介电常数的层间绝缘膜的有机硅前体
公开(公告)号：US06583048B2
公开(公告)日：2003-06-24
申请号：US09944042
申请日：2001-08-31
申请人： Jean Louise Vincent , Mark Leonard O'Neill , Howard Paul Withers, Jr. , Scott Edward Beck , Raymond Nicholas Vrtis
发明人： Jean Louise Vincent , Mark Leonard O'Neill , Howard Paul Withers, Jr. , Scott Edward Beck , Raymond Nicholas Vrtis
IPC分类号： H01L214763
CPC分类号： B05D1/60 , C23C16/401 , H01L21/02126 , H01L21/02131 , H01L21/02216 , H01L21/02274 , H01L21/3121 , H01L21/31629 , H01L21/31633
摘要： A method of forming a low dielectric constant interlayer dielectric film on a substrate by reacting, under chemical vapor deposition conditions sufficient to deposit the film on the substrate, an organosilicon precursor comprising a silyl ether, a silyl ether oligomer, or an organosilicon compound containing one or more reactive groups, to form an interlayer dielectric film having a dielectric constant of 3.5 or less. The films formed by the above method.
摘要翻译：在基板上形成低介电常数层间电介质膜的方法，在足以将该膜沉积在基板上的化学气相沉积条件下反应含有甲硅烷基醚，甲硅烷基醚低聚物或含有一个的有机硅化合物的有机硅前体或更多的反应性基团，以形成介电常数为3.5或更小的层间绝缘膜。由上述方法形成的薄膜。

34. 发明授权

US09212420B2 Chemical vapor deposition method 有权
标题翻译：化学气相沉积法
公开(公告)号：US09212420B2
公开(公告)日：2015-12-15
申请号：US12730088
申请日：2010-03-23
申请人： Eric M. Lee , Raymond Nicholas Vrtis , Mark Leonard O'Neill , Patrick Timothy Hurley , Jacques Faguet , Takashi Matsumoto , Osayuki Akiyama
发明人： Eric M. Lee , Raymond Nicholas Vrtis , Mark Leonard O'Neill , Patrick Timothy Hurley , Jacques Faguet , Takashi Matsumoto , Osayuki Akiyama
IPC分类号： C23C16/00 , C23C16/30 , C23C16/40 , C23C16/455 , C23C16/46 , C23C16/18 , C23C16/56
CPC分类号： C23C16/30 , C23C16/18 , C23C16/401 , C23C16/4557 , C23C16/46 , C23C16/56
摘要： A chemical vapor deposition (CVD) method for depositing a thin film on a surface of a substrate is described. The CVD method comprises disposing a substrate on a substrate holder in a process chamber, and introducing a process gas to the process chamber, wherein the process gas comprises a chemical precursor. The process gas is exposed to a non-ionizing heat source separate from the substrate holder to cause decomposition of the chemical precursor. A thin film is deposited upon the substrate.
摘要翻译：描述了用于在衬底的表面上沉积薄膜的化学气相沉积（CVD）方法。 CVD方法包括将衬底设置在处理室中的衬底保持器上，并将工艺气体引入到处理室中，其中工艺气体包括化学前体。处理气体暴露于与基板保持器分离的非电离热源以引起化学前体的分解。薄膜沉积在基底上。

35. 发明申请

US20100041234A1 Process For Restoring Dielectric Properties 有权
标题翻译：恢复介电性能的工艺
公开(公告)号：US20100041234A1
公开(公告)日：2010-02-18
申请号：US12540395
申请日：2009-08-13
申请人： Scott Jeffrey Weigel , Mark Leonard O'Neill , Mary Kathryn Haas , Laura M. Matz , Glenn Michael Mitchell , Aiping Wu , Raymond Nicholas Vrtis , John Giles Langan
发明人： Scott Jeffrey Weigel , Mark Leonard O'Neill , Mary Kathryn Haas , Laura M. Matz , Glenn Michael Mitchell , Aiping Wu , Raymond Nicholas Vrtis , John Giles Langan
IPC分类号： H01L21/311
CPC分类号： H01L21/3105
摘要： A method for preparing an interlayer dielectric to minimize damage to the interlayer's dielectric properties, the method comprising the steps of: depositing a layer of a silicon-containing dielectric material onto a substrate, wherein the layer has a first dielectric constant and wherein the layer has at least one surface; providing an etched pattern in the layer by a method that includes at least one etch process and exposure to a wet chemical composition to provide an etched layer, wherein the etched layer has a second dielectric constant, and wherein the wet chemical composition contributes from 0 to 40% of the second dielectric constant; contacting the at least one surface of the layer with a silicon-containing fluid; optionally removing a first portion of the silicon-containing fluid such that a second portion of the silicon-containing fluid remains in contact with the at least one surface of the layer; and exposing the at least one surface of the layer to UV radiation and thermal energy, wherein the layer has a third dielectric constant that is restored to a value that is at least 90% restored relative to the second dielectric constant.
摘要翻译：一种用于制备层间电介质以最小化对中间层介电特性的损害的方法，所述方法包括以下步骤：在衬底上沉积含硅介电材料的层，其中所述层具有第一介电常数，并且其中所述层具有至少一个表面; 通过包括至少一个蚀刻工艺和暴露于湿化学组合物以提供蚀刻层的方法在该层中提供蚀刻图案，其中所述蚀刻层具有第二介电常数，并且其中所述湿化学成分贡献于0至 40％的第二介电常数; 使层的至少一个表面与含硅流体接触; 任选地除去含硅流体的第一部分，使得含硅流体的第二部分保持与层的至少一个表面接触; 以及将所述层的所述至少一个表面暴露于UV辐射和热能，其中所述层具有恢复到相对于所述第二介电常数恢复至少90％的值的第三介电常数。

36. 发明申请

US20090236745A1 Adhesion to Copper and Copper Electromigration Resistance 有权
标题翻译：铜和铜的电迁移阻力
公开(公告)号：US20090236745A1
公开(公告)日：2009-09-24
申请号：US12406467
申请日：2009-03-18
申请人： Raymond Nicholas Vrtis , Laura M. Matz , Mark Leonard O'Neill
发明人： Raymond Nicholas Vrtis , Laura M. Matz , Mark Leonard O'Neill
IPC分类号： H01L23/52 , H01L21/302 , B32B1/06
CPC分类号： H01L21/76849 , C23C16/02 , C23C16/56 , H01L21/28556 , H01L21/76834 , H01L21/76883 , Y10T428/13
摘要： The present invention relates to the improved adhesion between a patterned conductive metal layer, usually a copper layer, and a patterned barrier dielectric layer. The structure with the improved adhesion comprises an adhesion layer between a patterned barrier dielectric layer and a patterned conductive metal layer. The adhesion layer improves adhesion between the metal layer and the barrier layer without increasing the copper bulk electrical resistance. The method of making the structure with the improved adhesion comprises steps of thermal expositing the patterned conductive metal layer to an organometallic precursor to deposit an adhesion layer at least on the top of the patterned conductive metal layer.
摘要翻译：本发明涉及图案化导电金属层（通常为铜层）和图案化势垒介电层之间的改进的粘合性。具有改进的粘附性的结构包括在图案化阻挡介电层和图案化的导电金属层之间的粘合层。粘附层改善了金属层和阻挡层之间的粘附性，而不增加铜体电阻。制造具有改善的粘合性的结构的方法包括将图案化的导电金属层热展开到有机金属前体的步骤，以至少在图案化的导电金属层的顶部沉积粘附层。

37. 发明申请

US20080199977A1 Activated Chemical Process for Enhancing Material Properties of Dielectric Films 有权
标题翻译：用于提高介电薄膜材料性能的活性化学工艺
公开(公告)号：US20080199977A1
公开(公告)日：2008-08-21
申请号：US12023552
申请日：2008-01-31
申请人： Scott Jeffrey Weigel , Mark Leonard O'Neill , Raymond Nicholas Vrtis , Dino Sinatore
发明人： Scott Jeffrey Weigel , Mark Leonard O'Neill , Raymond Nicholas Vrtis , Dino Sinatore
IPC分类号： H01L21/31 , H01L21/00
CPC分类号： H01L21/3105 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02274
摘要： A method for restoring a dielectric constant of a layer of a silicon-containing dielectric material having a first dielectric constant and at least one surface, wherein the first dielectric constant of the layer of silicon-containing dielectric material has increased to a second dielectric constant, the method comprising the steps of: contacting the at least one surface of the layer of silicon-containing dielectric material with a silicon-containing fluid; and exposing the at least one surface of the layer of silicon-containing dielectric material to an energy source selected from the group consisting of: UV radiation, heat, and an electron beam, wherein the layer of silicon-containing dielectric material has a third dielectric constant that is lower than the second dielectric constant after exposing the layer of silicon-containing dielectric material to the energy source.
摘要翻译：一种用于恢复具有第一介电常数和至少一个表面的含硅介电材料层的介电常数的方法，其中所述含硅介电材料层的第一介电常数已经增加到第二介电常数，该方法包括以下步骤：使含硅介电材料层的至少一个表面与含硅流体接触; 以及将所述含硅介电材料层的所述至少一个表面暴露于选自以下的能量源：UV辐射，热和电子束，其中所述含硅介电材料层具有第三电介质常数，其在将含硅介电材料层暴露于能量源之后低于第二介电常数。

38. 发明授权

US08283260B2 Process for restoring dielectric properties 有权
标题翻译：恢复介电性能的方法
公开(公告)号：US08283260B2
公开(公告)日：2012-10-09
申请号：US12540395
申请日：2009-08-13
申请人： Scott Jeffrey Weigel , Mark Leonard O'Neill , Mary Kathryn Haas , Laura M. Matz , Glenn Michael Mitchell , Aiping Wu , Raymond Nicholas Vrtis , John Giles Langan
发明人： Scott Jeffrey Weigel , Mark Leonard O'Neill , Mary Kathryn Haas , Laura M. Matz , Glenn Michael Mitchell , Aiping Wu , Raymond Nicholas Vrtis , John Giles Langan
IPC分类号： H01L21/302
CPC分类号： H01L21/3105
摘要： A method for preparing an interlayer dielectric to minimize damage to the interlayer's dielectric properties, the method comprising the steps of: depositing a layer of a silicon-containing dielectric material onto a substrate, wherein the layer has a first dielectric constant and wherein the layer has at least one surface; providing an etched pattern in the layer by a method that includes at least one etch process and exposure to a wet chemical composition to provide an etched layer, wherein the etched layer has a second dielectric constant, and wherein the wet chemical composition contributes from 0 to 40% of the second dielectric constant; contacting the at least one surface of the layer with a silicon-containing fluid; optionally removing a first portion of the silicon-containing fluid such that a second portion of the silicon-containing fluid remains in contact with the at least one surface of the layer; and exposing the at least one surface of the layer to UV radiation and thermal energy, wherein the layer has a third dielectric constant that is restored to a value that is at least 90% restored relative to the second dielectric constant.
摘要翻译：一种用于制备层间电介质以最小化对中间层介电特性的损害的方法，所述方法包括以下步骤：在衬底上沉积含硅介电材料的层，其中所述层具有第一介电常数，并且其中所述层具有至少一个表面; 通过包括至少一个蚀刻工艺和暴露于湿化学组合物以提供蚀刻层的方法在该层中提供蚀刻图案，其中所述蚀刻层具有第二介电常数，并且其中所述湿化学成分贡献于0至 40％的第二介电常数; 使层的至少一个表面与含硅流体接触; 任选地除去含硅流体的第一部分，使得含硅流体的第二部分保持与层的至少一个表面接触; 以及将所述层的所述至少一个表面暴露于UV辐射和热能，其中所述层具有恢复到相对于所述第二介电常数恢复至少90％的值的第三介电常数。

39. 发明申请

US20100136789A1 Dielectric Barrier Deposition Using Oxygen Containing Precursor 有权
标题翻译：使用含氧前驱体的介电阻挡层沉积
公开(公告)号：US20100136789A1
公开(公告)日：2010-06-03
申请号：US12623998
申请日：2009-11-23
申请人： Laura M. Matz , Raymond Nicholas Vrtis , Mark Leonard O'Neill , Dino Sinatore
发明人： Laura M. Matz , Raymond Nicholas Vrtis , Mark Leonard O'Neill , Dino Sinatore
IPC分类号： H01L21/3205 , H01L21/31 , H01L21/314
CPC分类号： C23C16/32 , H01L21/02126 , H01L21/02216 , H01L21/02274 , H01L21/02348 , H01L21/3105 , H01L21/76829 , H01L21/76835
摘要： A method is provided for depositing a dielectric barrier film including a precursor with silicon, carbon, oxygen, and hydrogen with improved barrier dielectric properties including lower dielectric constant and superior electrical properties. This method will be important for barrier layers used in a damascene or dual damascene integration for interconnect structures or in other dielectric barrier applications. In this example, specific structural properties are noted that improve the barrier performance.
摘要翻译：提供了一种用于沉积包括具有硅，碳，氧和氢的前体的介电阻挡膜的方法，其具有包括较低介电常数和优异电性能的改进的阻挡介电性能。该方法对于用于互连结构或其他介电屏障应用的镶嵌或双镶嵌集成中使用的阻挡层将是重要的。在该实施例中，注意到提高阻隔性能的具体结构性质。

40. 发明授权

US08637396B2 Dielectric barrier deposition using oxygen containing precursor 有权
标题翻译：使用含氧前体的介电阻挡层沉积
公开(公告)号：US08637396B2
公开(公告)日：2014-01-28
申请号：US12623998
申请日：2009-11-23
申请人： Laura M. Matz , Raymond Nicholas Vrtis , Mark Leonard O'Neill , Dino Sinatore
发明人： Laura M. Matz , Raymond Nicholas Vrtis , Mark Leonard O'Neill , Dino Sinatore
IPC分类号： H01L21/4763
CPC分类号： C23C16/32 , H01L21/02126 , H01L21/02216 , H01L21/02274 , H01L21/02348 , H01L21/3105 , H01L21/76829 , H01L21/76835
摘要： A method is provided for depositing a dielectric barrier film including a precursor with silicon, carbon, oxygen, and hydrogen with improved barrier dielectric properties including lower dielectric constant and superior electrical properties. This method will be important for barrier layers used in a damascene or dual damascene integration for interconnect structures or in other dielectric barrier applications. In this example, specific structural properties are noted that improve the barrier performance.
摘要翻译：提供了一种用于沉积包括具有硅，碳，氧和氢的前体的介电阻挡膜的方法，其具有包括较低介电常数和优异电性能的改进的阻挡介电性能。该方法对于用于互连结构或其他介电屏障应用的镶嵌或双镶嵌集成中使用的阻挡层将是重要的。在该实施例中，注意到提高阻隔性能的具体结构性质。

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