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31. 发明授权

US07743630B2 Method of making float glass with transparent conductive oxide (TCO) film integrally formed on tin bath side of glass and corresponding product 失效
标题翻译：在透明导电氧化物（TCO）膜上制造浮法玻璃的方法，其一体形成在玻璃的锡槽侧和相应的产品上
公开(公告)号：US07743630B2
公开(公告)日：2010-06-29
申请号：US11194729
申请日：2005-08-02
申请人： Alexey Krasnov , Ksenia A. Landa , Leonid M. Landa
发明人： Alexey Krasnov , Ksenia A. Landa , Leonid M. Landa
IPC分类号： C03B18/00 , C03B18/02 , C03C17/00 , C03C17/06 , C03C17/23
CPC分类号： C03B18/12 , C03C3/087 , C03C17/002 , C03C17/23 , C03C17/253 , C03C2217/211 , C03C2217/244 , C03C2218/10 , C03C2218/11 , C03C2218/36
摘要： A method of making float glass is provided that results in a transparent conductive oxide (TCO) films being integrally formed with the float glass at the tin side thereof. In particular, a donor(s) such as antimony and/or an oxide thereof is added to the glass batch during the process of manufacture. The donor diffuses into the tin oxide inclusive layer adjacent the tin bath during the “float” manufacturing process, thereby increasing the number of electrons in the tin oxide inclusive layer so as to form a TCO film at the tin side of the glass.
摘要翻译：提供了一种制造浮法玻璃的方法，其导致透明导电氧化物（TCO）膜与其在锡侧的浮法玻璃一体形成。特别地，在制造过程中，向玻璃批料中加入诸如锑和/或其氧化物的供体。在“漂浮”制造过程中，供体扩散到与锡槽相邻的含锡氧化物层中，从而增加包含氧化锡的层中的电子数，以在玻璃的锡侧形成TCO膜。

32. 发明申请

US20100089444A1 Method of making front electrode of photovoltaic device having etched surface and corresponding photovoltaic device 失效
标题翻译：制造具有蚀刻表面的光电器件的前电极和相应的光伏器件的方法
公开(公告)号：US20100089444A1
公开(公告)日：2010-04-15
申请号：US12285890
申请日：2008-10-15
申请人： Scott V. Thomsen , Yiwei Lu , Alexey Krasnov
发明人： Scott V. Thomsen , Yiwei Lu , Alexey Krasnov
IPC分类号： H01L31/00 , C23C14/00
CPC分类号： H01L31/1884 , H01L31/022466 , H01L31/0236 , Y02E10/50
摘要： Certain example embodiments of this invention relate to a photovoltaic (PV) device including an electrode such as a front electrode/contact, and a method of making the same. In certain example embodiments, the front electrode has a textured (e.g., etched) surface that faces the photovoltaic semiconductor film of the PV device. The front electrode has a transparent conductive oxide (TCO) film having first and second layers (continuous or discontinuous) of the same material (e.g., zinc oxide, zinc aluminum oxide, indium-tin-oxide, or tin oxide), where the first TCO layer is sputter-deposited using a ceramic sputtering target(s) and the second TCO layer of the same material is sputter-deposited using a metallic or substantially metallic sputtering target(s). This allows the better quality TCO of the film, deposited more slowly via the ceramic target(s), to be formed using the ceramic target and the lesser quality TCO of the film to be deposited more quickly and cost effectively via the metallic target(s). After the etching, most or all of the better quality ceramic-deposited TCO remains whereas much of the lesser quality metallic-deposited TCO of the film was removed during the etching process.
摘要翻译：本发明的某些示例性实施例涉及包括诸如前电极/触点的电极的光伏（PV）装置及其制造方法。在某些示例性实施例中，前电极具有面向PV器件的光电半导体膜的有纹理（例如蚀刻）的表面。前电极具有透明导电氧化物（TCO）膜，其具有相同材料（例如氧化锌，氧化锌铝，氧化铟锡或氧化锡）的第一和第二层（连续或不连续），其中第一使用陶瓷溅射靶溅射沉积TCO层，并且使用金属或基本上金属的溅射靶溅射沉积相同材料的第二TCO层。这允许通过使用陶瓷靶材形成的通过陶瓷靶材更缓慢地沉积的膜的更好的质量TCO，并且通过金属靶材更快速且成本有效地沉积的膜的质量较差的TCO（s ）。在蚀刻之后，大部分或全部较好质量的陶瓷沉积的TCO保留，而在蚀刻过程中除去较薄质量的金属沉积的TCO。

33. 发明申请

US20080047603A1 Front contact with intermediate layer(s) adjacent thereto for use in photovoltaic device and method of making same 审中-公开
标题翻译：与其相邻的中间层的前接触用于光伏器件及其制造方法
公开(公告)号：US20080047603A1
公开(公告)日：2008-02-28
申请号：US11509094
申请日：2006-08-24
申请人： Alexey Krasnov
发明人： Alexey Krasnov
IPC分类号： H01L31/00
CPC分类号： H01L31/022466 , B32B17/10036 , B32B17/10788 , H01L31/02168 , H01L31/1884 , Y02E10/50
摘要： An intermediate film is provided between the front contact and an absorbing semiconductor film of a photovoltaic device. The intermediate film may be discrete or refractive index graded in certain example embodiments of this invention. The refractive index (n) of the intermediate film is tuned to satisfy one or more of: (a) reduce optical reflection of solar radiation from the TCO/absorber interface thereby enhancing the amount of radiation which penetrates the absorber and which can be converted into electrical energy, (b) increase the amount of radiation trapped within the absorber, (c) reduce cross-diffusion of elements between the TCO of the front contact and the absorbing semiconductor film, and/or (d) form a high resistivity buffer layer (HRBL) between the front contact TCO and the absorber film.
摘要翻译：中间膜设置在光电器件的前触点和吸收半导体膜之间。在本发明的某些示例性实施例中，中间膜可以是离散的或折射率分级的。中间膜的折射率（n）被调谐以满足以下中的一个或多个：（a）减少来自TCO /吸收体界面的太阳辐射的光学反射，由此增强穿透吸收体的辐射量，并且可以转化为电能，（b）增加在吸收器内捕获的辐射量，（c）减少元件在前触点的TCO与吸收半导体膜之间的交叉扩散，和/或（d）形成高电阻率缓冲层（HRBL）在前触点TCO和吸收膜之间。

34. 发明申请

US20070007125A1 Coated article with transparent conductive oxide film doped to adjust Fermi level, and method of making same 失效
标题翻译：用掺杂透明导电氧化膜的涂层制品调整费米能级及其制造方法
公开(公告)号：US20070007125A1
公开(公告)日：2007-01-11
申请号：US11173157
申请日：2005-07-05
申请人： Alexey Krasnov , Yiwei Lu
发明人： Alexey Krasnov , Yiwei Lu
IPC分类号： C23C14/00 , B05D5/12 , B32B17/06
CPC分类号： C23C14/086 , C03C17/245 , C03C2217/216 , C03C2217/24 , C03C2218/154 , C04B35/453 , C04B2235/3217 , C04B2235/3284 , C04B2235/3291 , C04B2235/402 , C04B2235/408 , C04B2235/9653
摘要： A transparent conductive oxide (TCO) based film is formed on a substrate. The film may be formed by sputter-depositing, so as to include both a primary dopant (e.g., Al) and a co-dopant (e.g., Ag). The benefit of using the co-dopant in depositing the TCO inclusive film may be two-fold: (a) it may prevent or reduce self-compensation of the primary dopant by a more proper positioning of the Fermi level, and/or (b) it may promote declustering of the primary dopant, thereby freeing up space in the metal sublattice and permitting more primary dopant to create electrically active centers so as to improve conductivity of the film. Accordingly, the use of the co-dopant permits the primary dopant to be more effective in enhancing conductivity of the TCO inclusive film, without significantly sacrificing visible transmission characteristics. An example TCO in certain embodiments is ZnAlOx:Ag.
摘要翻译：在基板上形成基于透明导电氧化物（TCO）的膜。可以通过溅射沉积来形成膜，以便包括主要掺杂剂（例如Al）和共掺杂剂（例如Ag）。使用共掺杂剂在沉积含TCO的膜中的益处可以是两重的：（a）它可以通过更适当的费米能级定位来防止或减少主要掺杂剂的自补偿，和/或（b ）可以促进主要掺杂剂的分解，从而释放金属亚晶格中的空间，并允许更多的主要掺杂剂产生电活性中心，以便提高膜的导电性。因此，使用共掺杂剂允许主要掺杂剂在不显着牺牲可见透射特性的情况下更有效地增强包含TCO的膜的导电性。某些实施方案中的实例TCO是ZnAlO x：Ag。

35. 发明申请

US20060248923A1 Method of making float glass with transparent conductive oxide (TCO) film integrally formed on tin bath side of glass and corresponding product 失效
标题翻译：在透明导电氧化物（TCO）膜上制造浮法玻璃的方法，其一体形成在玻璃的锡槽侧和相应的产品上
公开(公告)号：US20060248923A1
公开(公告)日：2006-11-09
申请号：US11194729
申请日：2005-08-02
申请人： Alexey Krasnov , Ksenia Landa , Leonid Landa
发明人： Alexey Krasnov , Ksenia Landa , Leonid Landa
IPC分类号： C03B18/02 , C03B5/16 , C03B13/00
CPC分类号： C03B18/12 , C03C3/087 , C03C17/002 , C03C17/23 , C03C17/253 , C03C2217/211 , C03C2217/244 , C03C2218/10 , C03C2218/11 , C03C2218/36
摘要： A method of making float glass is provided that results in a transparent conductive oxide (TCO) films being integrally formed with the float glass at the tin side thereof. In particular, a donor(s) such as antimony and/or an oxide thereof is added to the glass batch during the process of manufacture. The donor diffuses into the tin oxide inclusive layer adjacent the tin bath during the “float” manufacturing process, thereby increasing the number of electrons in the tin oxide inclusive layer so as to form a TCO film at the tin side of the glass.
摘要翻译：提供了一种制造浮法玻璃的方法，其导致透明导电氧化物（TCO）膜与其在锡侧的浮法玻璃一体形成。特别地，在制造过程中，向玻璃批料中加入诸如锑和/或其氧化物的供体。在“漂浮”制造过程中，供体扩散到与锡槽相邻的含锡氧化物层中，从而增加包含氧化锡的层中的电子数，以在玻璃的锡侧形成TCO膜。

36. 发明授权

US06551651B2 Method of fabricating an organic electroluminescent device 失效
公开(公告)号：US06551651B2
公开(公告)日：2003-04-22
申请号：US09983571
申请日：2001-10-25
申请人： Peter G. Hofstra , Alexey Krasnov
发明人： Peter G. Hofstra , Alexey Krasnov
IPC分类号： B05D512
CPC分类号： H01L51/5281 , H01L51/5203 , Y10S428/917
摘要： The present invention provides a novel organic electroluminescent device having an optical interference member which reduces the overall reflectance from the device. The invention is particularly suited to current-driven organic displays having an anode, an electroluminescent layer and a cathode, where at least one optical interference member is placed between two of the layers and thus forms part of the electrical circuit required to excite the display. The optical interference member is chosen to have a thickness which causes at least some destructive optical interference of ambient light incident on the display. In addition, the material(s) of the optical interference member are chosen to have a work function which is compatible with the highest occupied molecular orbital, or the lowest unoccupied molecular orbital of the electroluminescent layer, depending on the location of the optical interference member in relation to the anode, cathode and electroluminescent layer. The appropriate selection of material can ensure proper current flow the device, thus reducing the likelihood of electrical breakdown of the organic electroluminescent layer, and improving the overall energy efficiency of the device.

37. 发明授权

US08766245B2 Organic light emitting diode with transparent electrode and method of making same 有权
标题翻译：具有透明电极的有机发光二极管及其制造方法
公开(公告)号：US08766245B2
公开(公告)日：2014-07-01
申请号：US13585149
申请日：2012-08-14
申请人： Alexey Krasnov
发明人： Alexey Krasnov
IPC分类号： H01L29/04
CPC分类号： H01L51/5215 , H01L51/5206 , H01L2251/308
摘要： A transparent electrode is provided for an organic light emitting diode (OLED) device. The electrode may be made according to a method including: sputter-depositing a first layer of or including indium tin oxide (ITO) on a substrate; sputter-depositing a thin second metallic or substantially metallic layer on the glass substrate over the first layer to form an electrode structure, and heat treating the electrode structure at temperature(s) of at least about 400 degrees C. in order to thermally activate at least the first layer of or including ITO. The electrode structure may then be provided in an OLED device on the light-emitting side of the organic light emitting semiconductor layer.
摘要翻译：为有机发光二极管（OLED）器件提供透明电极。电极可以根据以下方法制造：包括：在衬底上溅射沉积或包括氧化铟锡（ITO）的第一层; 在所述第一层上溅射沉积在所述玻璃基底上的薄的第二金属或基本上金属的层以形成电极结构，并且在至少约400℃的温度下热处理所述电极结构，以便在至少是第一层或包括ITO。然后可以在有机发光半导体层的发光侧的OLED器件中提供电极结构。

38. 发明授权

US08524526B1 Organic light emitting diode with transparent electrode and method of making same 有权
标题翻译：具有透明电极的有机发光二极管及其制造方法
公开(公告)号：US08524526B1
公开(公告)日：2013-09-03
申请号：US13585001
申请日：2012-08-14
申请人： Alexey Krasnov
发明人： Alexey Krasnov
IPC分类号： H01L51/54 , H01L51/56
CPC分类号： H01L51/5215 , H01L2251/308
摘要： A transparent electrode is provided for an organic light emitting diode (OLED) device. In certain embodiments, the electrode is made by sputter-depositing first and second transparent conductive oxide (TCO) layers of the same material (e.g., ITO), but with different stoichiometries, on a substrate. The first TCO layer is more oxided than is the second TCO layer. The TCO layers of the electrode on the substrate may then be heat treated (HT) at high temperature(s) in order to increase the work function (WF) and/or increase visible transmission of the electrode. The electrode is provided in an OLED device.
摘要翻译：为有机发光二极管（OLED）器件提供透明电极。在某些实施例中，通过在衬底上溅射沉积相同材料（例如ITO）但是具有不同化学计量的第一和第二透明导电氧化物（TCO）层来制造电极。第一TCO层比第二TCO层更加氧化。然后可以在高温下对衬底上的电极的TCO层进行热处理（HT），以增加功函数（WF）和/或增加电极的可见透射率。电极设置在OLED器件中。

39. 发明授权

US07597964B2 Thermally tempered coated article with transparent conductive oxide (TCO) coating 失效
标题翻译：具有透明导电氧化物（TCO）涂层的热回火涂层制品
公开(公告)号：US07597964B2
公开(公告)日：2009-10-06
申请号：US11194730
申请日：2005-08-02
申请人： Alexey Krasnov
发明人： Alexey Krasnov
IPC分类号： B32B17/06
CPC分类号： C23C14/086 , C03C17/2453 , C03C23/007 , C03C2217/211 , C03C2217/228 , C03C2217/23 , C03C2218/154 , C03C2218/32 , C23C14/5806
摘要： A method of making a coated article including a transparent conductive oxide (TCO) film supported by a tempered glass substrate is provided. Initially, an amorphous metal oxide film is sputter-deposited onto a non-tempered glass substrate, either directly or indirectly. The glass substrate with the amorphous film thereon is then thermally tempered using high temperatures. The thermal tempering causes the amorphous film to be transformed into a crystalline transparent conductive oxide (TCO) film. The heat used in the thermal tempering of the glass substrate causes the amorphous film to turn into a crystalline film, causes the visible transmission of the film to increase, and/or causes the film to become electrically conductive.
摘要翻译：提供一种制造包括由钢化玻璃基板支撑的透明导电氧化物（TCO））膜的涂覆制品的方法。最初，将非晶金属氧化物膜直接或间接地溅射沉积到非强化玻璃基板上。然后将其上具有非晶膜的玻璃基板用高温进行热回火。热回火使得非晶膜转变成晶体透明导电氧化物（TCO）膜。在玻璃基板的热回火中使用的热量导致非晶膜变成结晶膜，导致膜的可见透射增加和/或导致膜变得导电。

40. 发明申请

US20080308146A1 Front electrode including pyrolytic transparent conductive coating on textured glass substrate for use in photovoltaic device and method of making same 审中-公开
标题翻译：前电极包括用于光伏器件的纹理化玻璃基板上的热解透明导电涂层及其制造方法
公开(公告)号：US20080308146A1
公开(公告)日：2008-12-18
申请号：US11812078
申请日：2007-06-14
申请人： Alexey Krasnov , Scott V. Thomsen
发明人： Alexey Krasnov , Scott V. Thomsen
IPC分类号： H01L31/0236 , B29D11/00 , H01L31/0216 , H01L31/0224
CPC分类号： H01L31/18 , H01L31/02366 , Y02E10/50
摘要： A photovoltaic device includes a front electrode on a textured front glass substrate. In certain example embodiments, the glass substrate is textured via roller(s) and/or etching to form a textured surface. Thereafter, a front electrode is formed on the textured surface of the glass substrate via pyrolysis. The front electrode may be of or include a transparent conductive oxide (TCO) such as tin oxide and/or fluorinated tin oxide in certain example embodiments. In certain example instances, this is advantageous in that efficiency of the photovoltaic device can be improved by increasing light absorption by the active semiconductor via both increasing light intensity passing through the front glass substrate and front electrode, and increasing the light path in the semiconductor photovoltaic conversion layer.
摘要翻译：光电器件包括在纹理化的前玻璃基板上的前电极。在某些示例性实施例中，玻璃基板通过辊纹理和/或蚀刻以形成纹理表面。此后，通过热解在玻璃基板的纹理化表面上形成前电极。在某些示例性实施方案中，前电极可以是或包括透明导电氧化物（TCO），例如氧化锡和/或氟化氧化锡。在某些示例中，这是有利的，因为可以通过增加通过前玻璃基板和前电极的光强度增加有源半导体的光吸收来增加光电器件的效率，并且增加半导体光伏转换层。

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