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31. 发明专利

SG11202108355VA MULTI CHANNEL SPLITTER SPOOL 未知
公开(公告)号：SG11202108355VA
公开(公告)日：2021-08-30
申请号：SG11202108355V
申请日：2020-01-21
申请人： APPLIED MATERIALS INC
发明人： KAMATH SANJAY , PADHI DEENESH , BARMAN ARKAJIT ROY , MUTYALA MADHU SANTOSH KUMAR
IPC分类号： C23C16/455 , C23C16/40 , C23C16/505 , H01J37/32
摘要： Embodiments described herein relate to gas line systems with a multichannel splitter spool. In these embodiments, the gas line systems will include a first gas line that is configured to supply a first gas. The first gas line is coupled to a multichannel splitter spool with a plurality of second gas lines into which the first gas flows. Each gas line of the plurality of second gas lines will have a smaller volume than the volume of the first gas line. The smaller second gas lines will be wrapped by a heater jacket. Due to the smaller volume of the second gas lines, when the first gas is flowed through the second gas lines, the heater jacket will sufficiently heat the first gas, eliminating the condensation induced particle defects that occur in conventional gas line systems when the first gas meets with a second gas in the gas line system.

32. 发明专利

SG11202010449RA PULSED PLASMA DEPOSITION ETCH STEP COVERAGE IMPROVEMENT 未知
公开(公告)号：SG11202010449RA
公开(公告)日：2021-01-28
申请号：SG11202010449R
申请日：2019-05-23
申请人： APPLIED MATERIALS INC
发明人： VATS VINAYAK VEER , YU HANG , PADHI DEENESH , LI CHANGLING , AMICO GREGORY M , KAMATH SANJAY G
IPC分类号： H01L21/02 , C23C16/455 , H01J37/32 , H01L21/3065 , H01L21/311 , H01L21/67 , H05H1/46
摘要： Embodiments of the present disclosure relate to methods for in-situ deposition and treatment of a thin film for improved step coverage. In one embodiment, the method for processing a substrate is provided. The method includes forming a dielectric layer on patterned features of the substrate by exposing the substrate to a gas mixture of a first precursor and a second precursor simultaneously with plasma present in a process chamber, wherein the plasma is formed by a first pulsed RF power, exposing the dielectric layer to a first plasma treatment using a gas mixture of nitrogen and helium in the process chamber, and performing a plasma etch process by exposing the dielectric layer to a plasma formed from a gas mixture of a fluorine-containing precursor and a carrier gas, wherein the plasma is formed in the process chamber by a second pulsed RF power.

33. 发明申请

WO03011521B1 ELECTRO-CHEMICAL POLISHING APPARATUS 审中-公开
标题翻译：电化学抛光设备
公开(公告)号：WO03011521B1
公开(公告)日：2003-11-13
申请号：PCT/US0224676
申请日：2002-08-01
申请人： APPLIED MATERIALS INC
发明人： YAHALOM JOSEPH , GANDIKOTA SRINIVAS , MCGUIRK CHRISTOPHER R , PADHI DEENESH
IPC分类号： C25F7/00 , H01L21/00 , C25F3/16
CPC分类号： C25F7/00 , H01L21/6708
摘要： Generally, a method and apparatus for electro-chemical polishing a metal layer disposed on a substrate is provided. In one embodiment, the electro-chemical polishing apparatus generally includes a substrate support having a plurality of contact members, a cathode and at least one nozzle. The nozzle is adapted to centrally dispose a polishing fluid on the substrate supported by the substrate support. The cathode is adapted to couple the polishing fluid to a negative terminal of a power source. A positive terminal of the power source is electrically coupled through the contact members to the conductive layer of the substrate. The nozzle creates a turbulent flow in the portion of the polishing fluid boundary layer proximate the center of the substrate which enhances the polishing rate at the center of the substrate.
摘要翻译：一般而言，提供了用于对设置在衬底上的金属层进行电化学抛光的方法和装置。在一个实施例中，电化学抛光设备通常包括具有多个接触构件，阴极和至少一个喷嘴的基板支撑件。该喷嘴适于将抛光液集中设置在由基板支撑件支撑的基板上。阴极适于将抛光液耦合到电源的负极端子。电源的正极端子通过接触构件电耦合到基板的导电层。喷嘴在靠近基底中心的抛光流体边界层部分产生湍流，这增强了基底中心处的抛光速率。

34. 发明申请

WO03085166A2 ELECTROLESS DEPOSITION METHODS 审中-公开
标题翻译：电沉积方法
公开(公告)号：WO03085166A2
公开(公告)日：2003-10-16
申请号：PCT/US0310073
申请日：2003-04-02
申请人： APPLIED MATERIALS INC
发明人： PADHI DEENESH , YAHALOM JOSEPH , RAMANATHAN SIVAKAMI , MCGUIRK CHRIS R , GANDIKOTA SRINIVAS , DIXIT GIRISH
IPC分类号： C23C18/52 , C23C18/16 , C23C18/18 , C23C18/36 , H01L21/02 , H01L21/285 , H01L21/288 , H01L21/3205 , H01L21/336 , H01L21/768 , H01L29/78 , C23C18/00
CPC分类号： H01L21/76843 , C23C18/1608 , C23C18/1651 , C23C18/1694 , C23C18/1879 , C23C18/1882 , C23C18/34 , C23C18/42 , C23C18/50 , H01L21/28518 , H01L21/288 , H01L21/76849 , H01L21/76855 , H01L21/76864 , H01L21/76874 , H01L28/84 , H01L29/665
摘要： Methods and apparatus are provided for forming a metal or metal silicide layer by an electroless deposition technique. In one aspect, a method is provided for processing a substrate including depositing an initiation layer on a substrate surface, cleaning the substrate surface, and depositing a conductive material on the initiation layer by exposing the initiation layer to an electroless solution. The method may further comprise etching the substrate surface with an acidic solution and cleaning the substrate of the acidic solution prior to depositing the initiation layer. The initiation layer may be formed by exposing the substrate surface to a noble metal electroless solution or a borane-containing solution. The conductive material may be deposited with a borane-containing reducing agent. The conductive material may be used as a passivation layer, a barrier layer, a seed layer, or for use in forming a metal silicide layer.
摘要翻译：提供了通过无电沉积技术形成金属或金属硅化物层的方法和装置。在一个方面，提供了一种用于处理衬底的方法，包括在衬底表面上沉积起始层，清洁衬底表面，以及通过将引发层暴露于无电镀溶液而在引发层上沉积导电材料。该方法可以进一步包括用酸性溶液蚀刻衬底表面并在沉积起始层之前清洁酸性溶液的衬底。起始层可以通过将基材表面暴露于贵金属化学电解溶液或含硼烷溶液来形成。导电材料可以用含硼烷的还原剂沉积。导电材料可以用作钝化层，阻挡层，种子层，或用于形成金属硅化物层。

35. 发明申请

WO03011521A2 ELECTRO-CHEMICAL POLISHING APPARATUS 审中-公开
公开(公告)号：WO03011521A2
公开(公告)日：2003-02-13
申请号：PCT/US0224676
申请日：2002-08-01
申请人： APPLIED MATERIALS INC
发明人： YAHALOM JOSEPH , GANDIKOTA SRINIVAS , MCGUIRK CHRISTOPHER R , PADHI DEENESH
IPC分类号： C25F7/00 , H01L21/00 , B24B37/00
CPC分类号： C25F7/00 , H01L21/6708
摘要： Generally, a method and apparatus for electro-chemical polishing a metal layer disposed on a substrate is provided. In one embodiment, the electro-chemical polishing apparatus generally includes a substrate support having a plurality of contact members, a cathode and at least one nozzle. The nozzle is adapted to centrally dispose a polishing fluid on the substrate supported by the substrate support. The cathode is adapted to couple the polishing fluid to a negative terminal of a power source. A positive terminal of the power source is electrically coupled through the contact members to the conductive layer of the substrate. The nozzle creates a turbulent flow in the portion of the polishing fluid boundary layer proximate the center of the substrate which enhances the polishing rate at the center of the substrate.

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