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31. 发明专利

SG136873A1 INTEGRATED PROCESS MODULATION (IPM) A NOVEL SOLUTION FOR GAPFILL WITH HDP- CVD 未知
公开(公告)号：SG136873A1
公开(公告)日：2007-11-29
申请号：SG2007024474
申请日：2007-04-02
申请人： APPLIED MATERIALS INC
发明人： NEMANI SRINIVAS D , LEE YOUNG S , YIEH ELLIE Y , WANG ANCHUAN , BLOKING JASON THOMAS , HAN LUNG-TIEN
摘要： FIG. 1A; FIG. 1B & FIG. 1C

32. 发明公开

EP2208222A4 METHODS FOR FORMING A SILICON OXIDE LAYER OVER A SUBSTRATE 审中-公开
标题翻译：法在基板上形成氧化硅层的
公开(公告)号：EP2208222A4
公开(公告)日：2013-01-30
申请号：EP08841549
申请日：2008-10-20
申请人： APPLIED MATERIALS INC
发明人： NEMANI SRINIVAS D , MALLICK ABHIJIT BASU , YIEH ELLIE Y
IPC分类号： H01L21/31 , C09D183/05 , C09D183/14 , C23C16/04 , C23C16/40 , C23C16/452 , C23C16/56 , H01L21/02 , H01L21/312 , H01L21/316
CPC分类号： H01L21/31612 , C23C16/045 , C23C16/401 , C23C16/452 , C23C16/56 , H01L21/02126 , H01L21/02164 , H01L21/02216 , H01L21/02222 , H01L21/02274 , H01L21/02337 , H01L21/3122 , H01L21/31633

33. 发明申请

WO2016003575A3 LOCALIZED STRESS MODULATION FOR OVERLAY AND EPE 审中-公开
标题翻译：局部应力调节覆盖和EPE
公开(公告)号：WO2016003575A3
公开(公告)日：2017-05-04
申请号：PCT/US2015033810
申请日：2015-06-02
申请人： APPLIED MATERIALS INC
发明人： YIEH ELLIE Y , DAI HUIXIONG , NEMANI SRINIVAS D , GODET LUDOVIC , BENCHER CHRISTOPHER DENNIS
IPC分类号： H01L21/66
CPC分类号： H01L22/12 , H01L22/20
摘要： Embodiments of the disclosure provide apparatus and methods for localized stress modulation for overlay and edge placement error (EPE) using electron or ion implantation. In one embodiment, a process for correcting overlay error on a substrate generally includes performing a measurement process in a metrology tool on a substrate to obtain a substrate distortion or an overlay error map, determining doping parameters to correct overlay error or substrate distortion based on the overlay error map, and providing a doping recipe to a doping apparatus based on the doping parameters determined to correct substrate distortion or overlay error. Embodiments may also provide performing a doping treatment process on the substrate using the determined doping repair recipe, for example, by comparing the overlay error map or substrate distortion with a database library stored in a computing system.
摘要翻译：本公开的实施例提供了用于使用电子或离子注入的覆盖和边缘放置误差（EPE）的局部应力调制的设备和方法。在一个实施例中，用于校正衬底上的重叠误差的过程通常包括在衬底上的测量工具中执行测量过程以获得衬底失真或重叠误差图，确定掺杂参数以校正重叠误差或衬底失真，其基于以及基于所确定的掺杂参数来向掺杂装置提供掺杂配方以校正衬底失真或覆盖误差。实施例还可以提供使用确定的掺杂修复配方在衬底上执行掺杂处理过程，例如通过将覆盖误差图或衬底失真与存储在计算系统中的数据库库进行比较。

34. 发明申请

WO2016011294A3 ADDITIVE MANUFACTURING WITH LASER AND GAS FLOW 审中-公开
标题翻译：添加剂与激光和气体流动
公开(公告)号：WO2016011294A3
公开(公告)日：2016-09-29
申请号：PCT/US2015040808
申请日：2015-07-16
申请人： APPLIED MATERIALS INC
发明人： RAMASWAMY KARTIK , SUBRAMANI ANANTHA K , KRISHNAN KASIRAMAN , SUN JENNIFER Y , BREZOCZKY THOMAS B , ROWLAND CHRISTOPHER A , NEMANI SRINIVAS D , SRINIVASAN SWAMINATHAN , YAVELBERG SIMON , YIEH ELLIE Y , NG HOU T
IPC分类号： B22F3/105 , B33Y30/00 , B33Y50/02
CPC分类号： B22F3/1055 , B22F1/0088 , B22F2003/1056 , B22F2003/1057 , B23K26/1464 , B23K26/342 , B23K26/702 , B28B1/001 , B28B17/0081 , B29C64/153 , B29C64/20 , B29C64/386 , B29C67/0077 , B29C67/0085 , B29C67/0088 , B33Y10/00 , B33Y30/00 , B33Y40/00 , B33Y50/02 , Y02P10/295
摘要： An additive manufacturing system includes a platen, a feed material dispenser apparatus configured to deliver a feed material onto the platen, a laser source configured to produce a laser beam during use of the additive manufacturing system, a controller configured to direct the laser beam to locations on the platen specified by a computer aided design program to cause the feed material to fuse, a gas source configured to supply gas, and a nozzle configured to accelerate and direct the gas to substantially the same location on the platen as the laser beam.
摘要翻译：添加剂制造系统包括压板，配置成将进料输送到压板上的进料分配器装置，配置成在使用添加剂制造系统期间产生激光束的激光源，被配置为将激光束定向到位置在由计算机辅助设计程序指定的压板上引起进料材料熔化，构造成供应气体的气源和被配置为加速并将气体引导到压板上与激光束基本相同的位置的喷嘴。

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