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31. 发明申请

WO2011159691A2 CHEMICAL VAPOR DEPOSITION OF RUTHENIUM FILMS CONTAINING OXYGEN OR CARBON 审中-公开
标题翻译：包含氧气或碳氢化合物的薄膜的化学气相沉积
公开(公告)号：WO2011159691A2
公开(公告)日：2011-12-22
申请号：PCT/US2011/040336
申请日：2011-06-14
申请人： APPLIED MATERIALS, INC. , KIM, Hoon , LEE, Sang-Hyeob , YU, Sang Ho , LEE, Wei Ti , GANGULI, Seshadri , HA, Hyoung-Chan
发明人： KIM, Hoon , LEE, Sang-Hyeob , YU, Sang Ho , LEE, Wei Ti , GANGULI, Seshadri , HA, Hyoung-Chan
IPC分类号： H01L21/31 , H01L21/205
CPC分类号： H01L28/65 , B82Y40/00 , C23C16/18 , C23C16/56 , H01L21/28556 , H01L21/76843 , H01L21/76856 , H01L21/76864 , H01L28/91
摘要： Methods for depositing ruthenium-containing films are provided herein. In some embodiments, a method of depositing a ruthenium-containing film on a substrate may include depositing a ruthenium-containing film on a substrate using a ruthenium-containing precursor, the deposited ruthenium-containing film having carbon incorporated therein; and exposing the deposited ruthenium-containing film to an oxygen-containing gas to remove at least some of the carbon from the deposited ruthenium-containing film. In some embodiments, the oxygen-containing gas exposed ruthenium-containing film may be annealed in a hydrogen-containing gas to remove at least some oxygen from the ruthenium-containing film. In some embodiments, the deposition, exposure, and annealing may be repeated to deposit the ruthenium-containing film to a desired thickness.
摘要翻译：本文提供了沉积含钌膜的方法。在一些实施方案中，在基材上沉积含钌膜的方法可以包括使用含钌前驱体将沉积的含钌膜沉积在基板上，并将沉积的含钌膜暴露于含氧气体中以从沉积的含钌膜中除去至少一些碳。在一些实施方案中，含氧气体暴露的含钌膜可以在含氢气体中退火以从含钌膜中除去至少一些氧。在一些实施例中，可以重复沉积，曝光和退火，以将含钌膜沉积到期望的厚度。

32. 发明申请

WO2011153095A2 METAL GATE STRUCTURES AND METHODS FOR FORMING THEREOF 审中-公开
标题翻译：金属门结构及其形成方法
公开(公告)号：WO2011153095A2
公开(公告)日：2011-12-08
申请号：PCT/US2011/038357
申请日：2011-05-27
申请人： APPLIED MATERIALS, INC. , GANGULI, Seshadri , YU, Sang Ho , LEE, Sang-Hyeob , HA, Hyoung-Chan , LEE, Wei Ti , KIM, Hoon , GANDIKOTA, Srinivas , LEI, Yu , MORAES, Kevin , TANG, Xianmin
发明人： GANGULI, Seshadri , YU, Sang Ho , LEE, Sang-Hyeob , HA, Hyoung-Chan , LEE, Wei Ti , KIM, Hoon , GANDIKOTA, Srinivas , LEI, Yu , MORAES, Kevin , TANG, Xianmin
IPC分类号： H01L29/78 , H01L21/336 , H01L21/31
CPC分类号： H01L21/28079 , H01L21/28088 , H01L21/32051 , H01L29/49
摘要： Metal gate structures and methods for forming thereof are provided herein. In some embodiments, a method for forming a metal gate structure on a substrate having a feature formed in a high k dielectric layer may include depositing a first layer within the feature atop the dielectric layer; depositing a second layer comprising cobalt or nickel within the feature atop the first layer; and depositing a third layer comprising a metal within the feature atop the second layer to fill the feature, wherein at least one of the first or second layers forms a wetting layer to form a nucleation layer for a subsequently deposited layer, wherein one of the first, second, or third layers forms a work function layer, and wherein the third layer forms a gate electrode.
摘要翻译：本文提供了金属门结构及其形成方法。在一些实施例中，在具有形成在高k电介质层中的特征的衬底上形成金属栅极结构的方法可以包括在电介质层顶部的特征内沉积第一层; 在所述特征内在所述第一层顶部沉积包含钴或镍的第二层; 以及在第二层顶部沉积包括特征内的金属的第三层以填充该特征，其中第一层或第二层中的至少一层形成润湿层以形成后续沉积层的成核层，其中第一层第二层或第三层形成功函数层，并且其中第三层形成栅电极。

33. 发明申请

WO2011119293A3 FORMATION OF LINER AND BARRIER FOR TUNGSTEN AS GATE ELECTRODE AND AS CONTACT PLUG TO REDUCE RESISTANCE AND ENHANCE DEVICE PERFORMANCE 审中-公开
公开(公告)号：WO2011119293A3
公开(公告)日：2011-09-29
申请号：PCT/US2011/026444
申请日：2011-02-28
申请人： APPLIED MATERIALS, INC. , LEE, Sang-Hyeob , YU, Sang Ho , LEE, Wei Ti , GANGULI, Seshadri , HA, Hyoung-Chan , KIM, Hoon
发明人： LEE, Sang-Hyeob , YU, Sang Ho , LEE, Wei Ti , GANGULI, Seshadri , HA, Hyoung-Chan , KIM, Hoon
IPC分类号： H01L21/28 , H01L21/336 , H01L29/78 , H01L21/8242 , H01L27/108
摘要： The invention provides a method of forming a film stack on a substrate, comprising depositing a tungsten nitride layer on the substrate, subjecting the substrate to a nitridation treatment using active nitrogen species from a remote plasma, and depositing a conductive bulk layer directly on the tungsten nitride layer without depositing a tungsten nucleation layer on the tungsten nitride layer as a growth site for tungsten.

34. 发明申请

WO2003028091A2 COPPER INTERCONNECT BARRIER LAYER STRUCTURE AND FORMATION METHOD 审中-公开
标题翻译：铜互连障碍层结构与形成方法
公开(公告)号：WO2003028091A2
公开(公告)日：2003-04-03
申请号：PCT/US2002/029954
申请日：2002-09-20
申请人： APPLIED MATERIALS, INC.
发明人： CHEN, Ling , GANGULI, Seshadri , MARCADAL, Christophe , WEI, Cao , MOSELY, Roderick, C. , CHANG, Mei
IPC分类号： H01L21/768
CPC分类号： H01L21/76843 , H01L21/28556 , H01L21/28562 , H01L21/76846 , H01L21/76876 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A method for forming a tungsten-containing copper interconnect barrier layer (e.g., a tungsten [W] or tungsten-nitride [W x N] copper interconnect barrier layer) on a substrate with a high (e.g., greater than 30%) sidewall step coverage and ample adhesion to underlying dielectric layers. The method includes first depositing a thin titanium-nitride (TiN) or tantalum nitride (TaN) nucleation layer on the substrate, followed by the formation of a tungsten-containing copper interconnect barrier layer (e.g., a W or W x N copper interconnect barrier layer) overlying the substrate. The tungsten-containing copper interconnect barrier layer can, for example, be formed using a Chemical Vapor Deposition (CVD) technique that employs a fluorine-free tungsten-containing gas (e.g., tungsten hexacarbonyl [W(CO) 6 ]) or a WF 6 -based Atomic Layer Deposition (ALD) technique. The presence of a thin TiN (or TaN) nucleation layer facilitates the formation of a tungsten-containing copper interconnect barrier layer with a sidewall step coverage of greater than 30% and ample adhesion to dielectric layers. A copper interconnect barrier layer structure includes a thin titanium-nitride (TiN) (or tantalum nitride [TaN]) nucleation layer disposed directly on the dielectric substrate (e.g., a single or dual-damascene copper interconnect dielectric substrate). The copper interconnect barrier layer structure also includes a tungsten-containing copper interconnect barrier layer (e.g., a W or W x N copper interconnect barrier layer) formed on the thin TiN (or TaN) nucleation layer using, for example, a CVD technique that employs a fluorine-free tungsten-containing gas (e.g., [W(CO) 6 ]) or a WF 6 -based ALD technique.
摘要翻译：在具有高（例如，大于30％）侧壁台阶覆盖的基底上形成含钨铜互连屏障层（例如，钨[W]或氮化钨[WxN]铜互连阻挡层）的方法，以及充足的粘附到底层电介质层。该方法包括首先在衬底上沉积薄氮化钛（TiN）或氮化钽（TaN）成核层，随后形成含钨铜互连势垒层（例如，W或WxN铜互连阻挡层）覆盖基板。含钨铜互连阻挡层例如可以使用使用无氟含钨气体（例如六羰基钨[W（CO）6]）或WF 6的化学气相沉积（CVD）技术来形成的原子层沉积（ALD）技术。存在薄的TiN（或TaN）成核层有助于形成具有大于30％的侧壁台阶覆盖率和对电介质层的充分粘合性的含钨铜互连屏障层。铜互连势垒层结构包括直接设置在电介质基板（例如，单镶嵌铜互连电介质基板）上的薄氮化钛（TiN）（或氮化钽[TaN]）成核层。铜互连阻挡层结构还包括使用例如CVD技术在薄TiN（或TaN）成核层上形成的含钨铜互连势垒层（例如，W或WxN铜互连阻挡层），其采用无氟含钨气体（例如[W（CO）6]）或基于WF6的ALD技术。

35. 发明申请

WO2022251562A1 AMORPHOUS SILICON-BASED SCAVENGING AND SEALING EOT 审中-公开
公开(公告)号：WO2022251562A1
公开(公告)日：2022-12-01
申请号：PCT/US2022/031236
申请日：2022-05-27
申请人： APPLIED MATERIALS, INC.
发明人： YANG, Yong , WRENCH, Jacqueline S. , YANG, Yixiong , GUO, Jianqiu , GANGULI, Seshadri , HUNG, Steven C.H. , GANDIKOTA, Srinivas
IPC分类号： H01L29/40 , H01L29/66 , H01L29/423 , H01L29/49
摘要： A sacrificial sealing layer is formed on a high-K metal gate (HKMG) stack to suppress oxidants, e.g., oxygen and water, from impacting the metal gate stack, thus preserving the device EOT. The method integrated processes that include forming an interfacial layer on the substrate; forming a high-K metal oxide layer on the interfacial layer, the high-K metal oxide layer comprising a dipole region adjacent to the interfacial layer, the dipole region; depositing a capping layer on the high-K metal oxide layer; and forming a sacrificial sealing layer on the capping layer. The dipole region is formed by driving a dopant species, e.g., zinc (Zn), vanadium (V), tungsten (W), molybdenum (Mo), ruthenium (Ru), titanium (Ti), tantalum (Ta), zirconium (Zr), aluminum (Al), niobium (Nb), or mixtures thereof, of a dipole film into the high-K metal oxide layer to form a dipole region.

36. 发明申请

WO2022235996A1 METHODS OF FORMING MOLYBDENUM CONTACTS 审中-公开
公开(公告)号：WO2022235996A1
公开(公告)日：2022-11-10
申请号：PCT/US2022/027991
申请日：2022-05-06
申请人： APPLIED MATERIALS, INC.
发明人： GANGULI, Seshadri , WRENCH, Jacqueline S. , YANG, Yixiong , YANG, Yong , GANDIKOTA, Srinivas
IPC分类号： H01L21/285 , H01L21/768 , C23C16/04 , C23C16/06
摘要： Methods for forming a semiconductor structure are described. The method includes cleaning a substrate to form a substrate surface substantially free of oxide, exposing the substrate surface to a first molybdenum precursor, and exposing the substrate surface to a reactant to selectively deposit a first molybdenum film on the substrate surface. The method may be performed in a processing chamber without breaking vacuum. The method may also include forming one or more of a cap layer and a liner and annealing the substrate. The method may also include depositing a second molybdenum film on the substrate surface.

37. 发明申请

WO2021141876A1 CATALYST ENHANCED SEAMLESS RUTHENIUM GAP FILL 审中-公开
公开(公告)号：WO2021141876A1
公开(公告)日：2021-07-15
申请号：PCT/US2021/012141
申请日：2021-01-05
申请人： APPLIED MATERIALS, INC.
发明人： YOON, Byunghoon , GANGULI, Seshadri , CEN, Xi
IPC分类号： C23C16/18 , C23C16/455 , C23C16/02 , C23C16/04 , H01L21/768 , C23C16/45534 , H01L21/76843 , H01L21/76876 , H01L21/76879 , H01L23/53209 , H01L23/53238 , H01L23/53252 , H01L23/53266
摘要： Methods of depositing a metal film with high purity are discussed. A catalyst enhanced CVD process is utilized comprising an alkyl halide catalyst soak and a precursor exposure. The precursor comprises a metal precursor having the general formula (I): M-L1(L2)y, wherein M is a metal, L1 is an aromatic ligand, L2 is an aliphatic ligand, and y is a number in the range of from 2 to 8 to form a metal film on the substrate surface, wherein the L2 comprises 1,5-hexdiene, 1,4-hexadiene, and less than 5% of 1,3-hexadiene. Selective deposition of a metal film with high purity on a metal surface over a dielectric surface is described.

38. 发明申请

WO2018098027A1 SELECTIVE DEPOSITION OF ALUMINUM OXIDE ON METAL SURFACES 审中-公开
公开(公告)号：WO2018098027A1
公开(公告)日：2018-05-31
申请号：PCT/US2017/062160
申请日：2017-11-17
申请人： APPLIED MATERIALS, INC.
发明人： YU, Sang Ho , GANGULI, Seshadri
IPC分类号： H01L21/02
摘要： Processing methods for depositing aluminum etch stop layers comprise positioning a substrate within a processing chamber, wherein the substrate comprises a metal surface and a dielectric surface; exposing the substrate to an aluminum precursor gas comprising an isopropoxide based aluminum precursor to selectively form an aluminum oxide (AlOx) etch stop layer onto the metal surface while leaving exposed the dielectric surface during a chemical vapor deposition process. The metal surfaces may be copper, cobalt, or tungsten.

39. 发明申请

WO2015138176A1 MULTI-THRESHOLD VOLTAGE (Vt) WORKFUNCTION METAL BY SELECTIVE ATOMIC LAYER DEPOSITION (ALD) 审中-公开
标题翻译：选择性原子层沉积（ALD）的多阈值电压（Vt）功能金属
公开(公告)号：WO2015138176A1
公开(公告)日：2015-09-17
申请号：PCT/US2015/018262
申请日：2015-03-02
申请人： APPLIED MATERIALS, INC.
发明人： BRAND, Adam , YOSHIDA, Naomi , GANGULI, Seshadri , THOMPSON, David
IPC分类号： H01L21/205
CPC分类号： H01L21/823842 , H01L29/42392 , H01L29/66545 , H01L29/66606 , H01L29/66795 , H01L29/7833 , H01L29/785 , H01L29/78696
摘要： Methods for forming a multi-threshold voltage device on a substrate are provided herein. In some embodiments, the method of forming a multi-threshold voltage device may include (a) providing a substrate having a first layer disposed thereon, wherein the substrate comprises a first feature and a second feature disposed within the first layer; (b) depositing a blocking layer atop the substrate; (c) selectively removing a portion of the blocking layer from atop the substrate to expose the first feature; (d) selectively depositing a first work function layer atop the first feature; (e) removing a remainder of the blocking layer to expose the second feature; and (f) depositing a second work function layer atop the atop the first work function layer and the second feature.
摘要翻译：本文提供了在基板上形成多阈值电压装置的方法。在一些实施例中，形成多阈值电压装置的方法可以包括（a）提供其上设置有第一层的衬底，其中衬底包括设置在第一层内的第一特征和第二特征; （b）在衬底顶上沉积阻挡层; （c）从所述衬底顶部选择性地去除所述阻挡层的一部分以暴露所述第一特征; （d）在所述第一特征顶部选择性地沉积第一功函数层; （e）去除所述阻挡层的剩余部分以暴露所述第二特征; 以及（f）在第一功能层和第二特征顶部之上沉积第二功函数层。

40. 发明申请

WO2013086087A1 CHEMICAL VAPOR DEPOSITION (CVD) OF RUTHENIUM FILMS AND APPLICATIONS FOR SAME 审中-公开
标题翻译： RUMEN膜的化学气相沉积（CVD）及其应用
公开(公告)号：WO2013086087A1
公开(公告)日：2013-06-13
申请号：PCT/US2012/068098
申请日：2012-12-06
申请人： APPLIED MATERIALS, INC.
发明人： KIM, Hoon , LEE, Sang Hyeob , LEE, Wei Ti , GANGULI, Seshadri , HA, Hyoung-Chan , YU, Sang Ho
IPC分类号： C23C16/44 , C23C16/06
CPC分类号： C23C16/18 , C23C16/40 , C23C16/56 , C23C28/02 , C23C28/023
摘要： Methods for depositing ruthenium-containing films are disclosed herein. In some embodiments, a method of depositing a ruthenium-containing film on a substrate may include depositing a ruthenium-containing film on a substrate using a ruthenium-containing precursor, the deposited ruthenium-containing film having carbon incorporated therein; and exposing the deposited ruthenium-containing layer to a hydrogen-containing gas to remove at least some of the carbon from the deposited ruthenium-containing film. In some embodiments, the hydrogen-containing gas exposed ruthenium-containing film may be subsequently exposed to an oxygen-containing gas to at least one of remove at least some carbon from or add oxygen to the ruthenium-containing film. In some embodiments, the deposition and exposure to the hydrogen-containing gas and optionally, the oxygen-containing gas may be repeated to deposit the ruthenium-containing film to a desired thickness.
摘要翻译：本文公开了沉积含钌膜的方法。在一些实施方案中，在基材上沉积含钌膜的方法可以包括使用含钌前驱体将沉积的含钌膜沉积在基板上，并将沉积的含钌层暴露于含氢气体中以从沉积的含钌膜中除去至少一些碳。在一些实施方案中，暴露含钌的含氟膜的膜随后可以暴露于含氧气体中至少一种，以将至少一些碳从氧钌中除去或添加至含钌膜。在一些实施方案中，可以重复沉积和暴露于含氢气体和任选地含氧气体，以将含钌膜沉积到所需厚度。

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