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31. 发明申请

WO2022251562A1 AMORPHOUS SILICON-BASED SCAVENGING AND SEALING EOT 审中-公开
公开(公告)号：WO2022251562A1
公开(公告)日：2022-12-01
申请号：PCT/US2022/031236
申请日：2022-05-27
申请人： APPLIED MATERIALS, INC.
发明人： YANG, Yong , WRENCH, Jacqueline S. , YANG, Yixiong , GUO, Jianqiu , GANGULI, Seshadri , HUNG, Steven C.H. , GANDIKOTA, Srinivas
IPC分类号： H01L29/40 , H01L29/66 , H01L29/423 , H01L29/49
摘要： A sacrificial sealing layer is formed on a high-K metal gate (HKMG) stack to suppress oxidants, e.g., oxygen and water, from impacting the metal gate stack, thus preserving the device EOT. The method integrated processes that include forming an interfacial layer on the substrate; forming a high-K metal oxide layer on the interfacial layer, the high-K metal oxide layer comprising a dipole region adjacent to the interfacial layer, the dipole region; depositing a capping layer on the high-K metal oxide layer; and forming a sacrificial sealing layer on the capping layer. The dipole region is formed by driving a dopant species, e.g., zinc (Zn), vanadium (V), tungsten (W), molybdenum (Mo), ruthenium (Ru), titanium (Ti), tantalum (Ta), zirconium (Zr), aluminum (Al), niobium (Nb), or mixtures thereof, of a dipole film into the high-K metal oxide layer to form a dipole region.

32. 发明申请

WO2022235996A1 METHODS OF FORMING MOLYBDENUM CONTACTS 审中-公开
公开(公告)号：WO2022235996A1
公开(公告)日：2022-11-10
申请号：PCT/US2022/027991
申请日：2022-05-06
申请人： APPLIED MATERIALS, INC.
发明人： GANGULI, Seshadri , WRENCH, Jacqueline S. , YANG, Yixiong , YANG, Yong , GANDIKOTA, Srinivas
IPC分类号： H01L21/285 , H01L21/768 , C23C16/04 , C23C16/06
摘要： Methods for forming a semiconductor structure are described. The method includes cleaning a substrate to form a substrate surface substantially free of oxide, exposing the substrate surface to a first molybdenum precursor, and exposing the substrate surface to a reactant to selectively deposit a first molybdenum film on the substrate surface. The method may be performed in a processing chamber without breaking vacuum. The method may also include forming one or more of a cap layer and a liner and annealing the substrate. The method may also include depositing a second molybdenum film on the substrate surface.

33. 发明申请

WO2021141876A1 CATALYST ENHANCED SEAMLESS RUTHENIUM GAP FILL 审中-公开
公开(公告)号：WO2021141876A1
公开(公告)日：2021-07-15
申请号：PCT/US2021/012141
申请日：2021-01-05
申请人： APPLIED MATERIALS, INC.
发明人： YOON, Byunghoon , GANGULI, Seshadri , CEN, Xi
IPC分类号： C23C16/18 , C23C16/455 , C23C16/02 , C23C16/04 , H01L21/768 , C23C16/45534 , H01L21/76843 , H01L21/76876 , H01L21/76879 , H01L23/53209 , H01L23/53238 , H01L23/53252 , H01L23/53266
摘要： Methods of depositing a metal film with high purity are discussed. A catalyst enhanced CVD process is utilized comprising an alkyl halide catalyst soak and a precursor exposure. The precursor comprises a metal precursor having the general formula (I): M-L1(L2)y, wherein M is a metal, L1 is an aromatic ligand, L2 is an aliphatic ligand, and y is a number in the range of from 2 to 8 to form a metal film on the substrate surface, wherein the L2 comprises 1,5-hexdiene, 1,4-hexadiene, and less than 5% of 1,3-hexadiene. Selective deposition of a metal film with high purity on a metal surface over a dielectric surface is described.

34. 发明申请

WO2018098027A1 SELECTIVE DEPOSITION OF ALUMINUM OXIDE ON METAL SURFACES 审中-公开
公开(公告)号：WO2018098027A1
公开(公告)日：2018-05-31
申请号：PCT/US2017/062160
申请日：2017-11-17
申请人： APPLIED MATERIALS, INC.
发明人： YU, Sang Ho , GANGULI, Seshadri
IPC分类号： H01L21/02
摘要： Processing methods for depositing aluminum etch stop layers comprise positioning a substrate within a processing chamber, wherein the substrate comprises a metal surface and a dielectric surface; exposing the substrate to an aluminum precursor gas comprising an isopropoxide based aluminum precursor to selectively form an aluminum oxide (AlOx) etch stop layer onto the metal surface while leaving exposed the dielectric surface during a chemical vapor deposition process. The metal surfaces may be copper, cobalt, or tungsten.

35. 发明申请

WO2015138176A1 MULTI-THRESHOLD VOLTAGE (Vt) WORKFUNCTION METAL BY SELECTIVE ATOMIC LAYER DEPOSITION (ALD) 审中-公开
标题翻译：选择性原子层沉积（ALD）的多阈值电压（Vt）功能金属
公开(公告)号：WO2015138176A1
公开(公告)日：2015-09-17
申请号：PCT/US2015/018262
申请日：2015-03-02
申请人： APPLIED MATERIALS, INC.
发明人： BRAND, Adam , YOSHIDA, Naomi , GANGULI, Seshadri , THOMPSON, David
IPC分类号： H01L21/205
CPC分类号： H01L21/823842 , H01L29/42392 , H01L29/66545 , H01L29/66606 , H01L29/66795 , H01L29/7833 , H01L29/785 , H01L29/78696
摘要： Methods for forming a multi-threshold voltage device on a substrate are provided herein. In some embodiments, the method of forming a multi-threshold voltage device may include (a) providing a substrate having a first layer disposed thereon, wherein the substrate comprises a first feature and a second feature disposed within the first layer; (b) depositing a blocking layer atop the substrate; (c) selectively removing a portion of the blocking layer from atop the substrate to expose the first feature; (d) selectively depositing a first work function layer atop the first feature; (e) removing a remainder of the blocking layer to expose the second feature; and (f) depositing a second work function layer atop the atop the first work function layer and the second feature.
摘要翻译：本文提供了在基板上形成多阈值电压装置的方法。在一些实施例中，形成多阈值电压装置的方法可以包括（a）提供其上设置有第一层的衬底，其中衬底包括设置在第一层内的第一特征和第二特征; （b）在衬底顶上沉积阻挡层; （c）从所述衬底顶部选择性地去除所述阻挡层的一部分以暴露所述第一特征; （d）在所述第一特征顶部选择性地沉积第一功函数层; （e）去除所述阻挡层的剩余部分以暴露所述第二特征; 以及（f）在第一功能层和第二特征顶部之上沉积第二功函数层。

36. 发明申请

WO2013086087A1 CHEMICAL VAPOR DEPOSITION (CVD) OF RUTHENIUM FILMS AND APPLICATIONS FOR SAME 审中-公开
标题翻译： RUMEN膜的化学气相沉积（CVD）及其应用
公开(公告)号：WO2013086087A1
公开(公告)日：2013-06-13
申请号：PCT/US2012/068098
申请日：2012-12-06
申请人： APPLIED MATERIALS, INC.
发明人： KIM, Hoon , LEE, Sang Hyeob , LEE, Wei Ti , GANGULI, Seshadri , HA, Hyoung-Chan , YU, Sang Ho
IPC分类号： C23C16/44 , C23C16/06
CPC分类号： C23C16/18 , C23C16/40 , C23C16/56 , C23C28/02 , C23C28/023
摘要： Methods for depositing ruthenium-containing films are disclosed herein. In some embodiments, a method of depositing a ruthenium-containing film on a substrate may include depositing a ruthenium-containing film on a substrate using a ruthenium-containing precursor, the deposited ruthenium-containing film having carbon incorporated therein; and exposing the deposited ruthenium-containing layer to a hydrogen-containing gas to remove at least some of the carbon from the deposited ruthenium-containing film. In some embodiments, the hydrogen-containing gas exposed ruthenium-containing film may be subsequently exposed to an oxygen-containing gas to at least one of remove at least some carbon from or add oxygen to the ruthenium-containing film. In some embodiments, the deposition and exposure to the hydrogen-containing gas and optionally, the oxygen-containing gas may be repeated to deposit the ruthenium-containing film to a desired thickness.
摘要翻译：本文公开了沉积含钌膜的方法。在一些实施方案中，在基材上沉积含钌膜的方法可以包括使用含钌前驱体将沉积的含钌膜沉积在基板上，并将沉积的含钌层暴露于含氢气体中以从沉积的含钌膜中除去至少一些碳。在一些实施方案中，暴露含钌的含氟膜的膜随后可以暴露于含氧气体中至少一种，以将至少一些碳从氧钌中除去或添加至含钌膜。在一些实施方案中，可以重复沉积和暴露于含氢气体和任选地含氧气体，以将含钌膜沉积到所需厚度。

37. 发明申请

WO2009134925A3 PROCESS FOR FORMING COBALT AND COBALT SILICIDE MATERIALS IN COPPER CONTACT APPLICATIONS 审中-公开
公开(公告)号：WO2009134925A3
公开(公告)日：2009-11-05
申请号：PCT/US2009/042165
申请日：2009-04-29
申请人： APPLIED MATERIALS, INC. , YU, Sang-Ho , MORAES, Kevin , GANGULI, Seshadri , CHUNG, Hua , PHAN, See-Eng , KHANDELWAL, Amit , WU, Kai
发明人： YU, Sang-Ho , MORAES, Kevin , GANGULI, Seshadri , CHUNG, Hua , PHAN, See-Eng , KHANDELWAL, Amit , WU, Kai
IPC分类号： H01L21/205 , H01L21/336
摘要： Embodiments of the invention provide methods for forming cobalt silicide layers and metallic cobalt layers by using various deposition processes and annealing processes. In one embodiment, a method for forming a cobalt silicide material on a substrate is provided which includes treating the substrate with at least one preclean process to expose a silicon-containing surface, depositing a cobalt silicide material on the silicon-containing surface, and depositing a copper material on or over the cobalt silicide material. In another embodiment, a metallic cobalt material may be deposited on the cobalt silicide material prior to depositing the copper material. In one example, the copper material may be formed by depositing a copper seed layer and a copper bulk layer on the substrate. The copper seed layer may be deposited by a PVD process and the copper bulk layer may be deposited by an ECP process or an electroless deposition process.

38. 发明申请

WO2009134916A2 PROCESS FOR FORMING COBALT AND COBALT SILICIDE MATERIALS IN TUNGSTEN CONTACT APPLICATIONS 审中-公开
标题翻译：用于形成钴和钴硅酸盐材料的方法在TUNGSTEN联系应用中
公开(公告)号：WO2009134916A2
公开(公告)日：2009-11-05
申请号：PCT/US2009/042153
申请日：2009-04-29
申请人： APPLIED MATERIALS, INC. , GANGULI, Seshadri , YU, Sang-Ho , PHAN, See-Eng , CHANG, Mei , KHANDELWAL, Amit , HA, Hyoung-Chan
发明人： GANGULI, Seshadri , YU, Sang-Ho , PHAN, See-Eng , CHANG, Mei , KHANDELWAL, Amit , HA, Hyoung-Chan
IPC分类号： H01L21/205 , H01L21/336
CPC分类号： H01L21/68792 , C23C16/06 , C23C16/42 , H01L21/02063 , H01L21/28518 , H01L21/2855 , H01L21/28556 , H01L21/28562 , H01L21/76814 , H01L21/76843 , H01L21/76846 , H01L21/76855 , H01L29/665
摘要： Embodiments of the invention described herein generally provide methods for forming cobalt silicide layers and metallic cobalt layers by using various deposition processes and annealing processes. In one embodiment, a method for forming a metallic silicide containing material on a substrate is provided which includes forming a metallic silicide material over or on a silicon-containing surface during a vapor deposition process by sequentially depositing a plurality of metallic silicide layers and silyl layers on the substrate, depositing a metallic capping layer over or on the metallic silicide material, heating the substrate during an annealing process, and depositing a metallic contact material over or on the barrier material. In one example, the metallic silicide layers and the metallic capping layer both contain cobalt. The cobalt silicide material may contain a silicon/cobalt atomic ratio of about 1.9 or greater, such as greater than about 2.0, or about 2.2 or greater.
摘要翻译：本文描述的本发明的实施例通常提供通过使用各种沉积工艺和退火工艺形成钴硅化物层和金属钴层的方法。在一个实施例中，提供了一种用于在衬底上形成含金属硅化物的材料的方法，该方法包括在气相沉积工艺期间，通过依次沉积多个金属硅化物层和甲硅烷基层，在含硅表面之上或之上形成金属硅化物材料在衬底上，在金属硅化物材料上或之上沉积金属覆盖层，在退火过程期间加热衬底，以及在屏障材料上或之上沉积金属接触材料。在一个实例中，金属硅化物层和金属覆盖层都含有钴。钴硅化物材料可以含有约1.9或更大，例如大于约2.0，或约2.2或更大的硅/钴原子比。

39. 发明申请

WO2007115000A2 CHEMICAL DELIVERY APPARATUS FOR CVD OR ALD 审中-公开
标题翻译：化学输送装置用于CVD或ALD
公开(公告)号：WO2007115000A2
公开(公告)日：2007-10-11
申请号：PCT/US2007/064276
申请日：2007-03-19
申请人： APPLIED MATERIALS, INC. , NAKASHIMA, Norman , MARCADAL, Christophe , GANGULI, Seshadri , MA, Paul , CHU, Schubert S.
发明人： NAKASHIMA, Norman , MARCADAL, Christophe , GANGULI, Seshadri , MA, Paul , CHU, Schubert S.
IPC分类号： G01N33/92
CPC分类号： C23C16/4481 , C23C16/4408 , C23C16/45561 , Y10T137/3127 , Y10T137/4259 , Y10T137/87249 , Y10T137/877
摘要： An ampoule assembly is configured with a bypass line and valve to allow the purging of the lines and valves connected to the ampoule. The ampoule assembly, in one embodiment, includes an ampoule, an inlet line, an outlet line, and a bypass line connected between the inlet line and the outlet line, the bypass line having a shut-off valve disposed therein to fluidly couple or decouple the inlet line and the outlet line. The shut-off valve disposed in the bypass line may be remotely controllable. Also, additional remotely controllable shut-off valves may be provided in the inlet and the outlet lines.
摘要翻译：安瓿组件配置有旁通管线和阀，以允许清洗连接到安瓿的管线和阀。在一个实施例中，安瓿组件包括安瓿瓶，入口管线，出口管线和连接在入口管线和出口管线之间的旁通管线，旁通管线具有设置在其中的截流阀以流体耦合或解耦入口管线和出口管路。设置在旁路管路中的截止阀可以是远程控制的。此外，可以在入口和出口管线中设置附加的可远程控制的截止阀。

40. 发明申请

WO2005098938A1 RUTHENIUM LAYER FORMATION FOR COPPER FILM DEPOSITION 审中-公开
标题翻译：铜箔沉积物的形成层
公开(公告)号：WO2005098938A1
公开(公告)日：2005-10-20
申请号：PCT/US2005/010203
申请日：2005-03-24
申请人： APPLIED MATERIALS, INC. , GANGULI, Seshadri , SHAH, Kavita , MAITY, Nirmaya , CHANG, Mei
发明人： GANGULI, Seshadri , SHAH, Kavita , MAITY, Nirmaya , CHANG, Mei
IPC分类号： H01L21/768
CPC分类号： C23C16/45553 , C23C16/18 , H01L21/28562 , H01L21/76843 , H01L21/76871 , H01L21/76873 , H01L21/76874
摘要： A method of ruthenium layer formation for interconnect features containing high aspect ratios is described. The ruthenium layer is formed using a cyclical deposition process. Embodiments of the invention generally provide a method of forming a film on a substrate surface that includes positioning a substrate within a process chamber, forming a first layer on the substrate surface by exposing the substrate to a ruthenium-containing compound. The method further includes purging the process chamber with a purge gas, exposing a reagent to the first layer containing the ruthenium-containing compound to form a ruthenium-containing layer on the substrate and purging the process chamber with the purge gas. The ruthenium-containing compound may be selected from bis(dialkylpentadienyl)ruthenium compounds, bis(alkylpentadienyl) ruthenium compounds, bis(pentadienyl)ruthenium compounds, derivatives thereof or combinations thereof.
摘要翻译：描述了包含高纵横比的互连特征的钌层形成方法。使用循环沉积工艺形成钌层。本发明的实施方案通常提供了在衬底表面上形成膜的方法，其包括将衬底定位在处理室内，通过将衬底暴露于含钌化合物在衬底表面上形成第一层。该方法还包括用吹扫气体吹扫处理室，将试剂暴露于含有含钌化合物的第一层，以在衬底上形成含钌层，并用净化气体吹扫处理室。含钌化合物可以选自双（二烷基戊二烯基）钌化合物，双（烷基戊二烯基）钌化合物，双（戊二烯基）钌化合物，其衍生物或其组合。

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