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    • 32. 发明申请
    • Low hysteresis materials and methods
    • 低磁滞材料和方法
    • US20060086432A1
    • 2006-04-27
    • US10973196
    • 2004-10-26
    • Zhiyong ZhangRichard James
    • Zhiyong ZhangRichard James
    • C22C14/00
    • C22C14/00A61L31/022A61L31/14A61L2400/16C22C30/02
    • A method is provided for predicting material properties and creating or modifying materials to exhibit desired properties. Materials and devices are described that are formed using the methods. Using embodiments described above, a number of advantages are realized. One advantage includes an ability to predict hysteresis in a multiple phase material. One embodiment includes an ability to modify or create a material to exhibit low hysteresis. Using embodiments described above to predict material properties and modify material properties, a number of materials can be created. An improved shape memory alloy with low hysteresis can be created. Additionally, a material that exhibits any of a number of properties that are normally mutually exclusive can be created.
    • 提供了一种用于预测材料性质和产生或改性材料以显示所需性质的方法。 描述了使用这些方法形成的材料和装置。 使用上述实施例,实现了许多优点。 一个优点包括预测多相材料中的滞后的能力。 一个实施例包括修改或创建材料以显示低滞后的能力。 使用上述实施例来预测材料性质和改变材料性质,可以产生许多材料。 可以产生具有低滞后性的改进的形状记忆合金。 此外,可以创建出现通常相互排斥的许多属性的任何一种的材料。