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31. 发明授权

US4725740A DC-AC converting arrangement for photovoltaic system 失效
标题翻译：用于光伏系统的DC-AC转换装置
公开(公告)号：US4725740A
公开(公告)日：1988-02-16
申请号：US768566
申请日：1985-08-23
申请人： Yukihiko Nakata
发明人： Yukihiko Nakata
IPC分类号： H02J1/00 , G05F1/67 , H01L31/04 , H02J7/35 , H02J9/00
CPC分类号： H02J7/35 , Y02E10/566 , Y10S136/293 , Y10T307/511 , Y10T307/516 , Y10T307/615 , Y10T307/625
摘要： An improved DC-AC converting arrangement for a photovoltaic system, which makes it possible to supply power at high efficiency by providing a driving control system arranged to stop operation of a DC-AC converter when a load power of the DC-AC converter falls below a predetermined reference value, and to restart the operation of the DC-AC converter when the load power exceeds the predetermined reference value.
摘要翻译：一种用于光伏系统的改进的DC-AC转换装置，其使得可以通过提供一种驱动控制系统以高效率供电，该驱动控制系统被布置成当DC-AC转换器的负载功率下降时停止DC-AC转换器的操作预定参考值，并且当负载功率超过预定参考值时重新开始DC-AC转换器的操作。

32. 发明授权

US4394601A ZnS:Mn Thin-film electroluminescent element with memory function 失效
标题翻译： ZnS：Mn具有记忆功能的薄膜电致发光元件
公开(公告)号：US4394601A
公开(公告)日：1983-07-19
申请号：US798008
申请日：1977-05-18
申请人： Mikio Takeda , Yoshinobu Kakihara , Masaru Yoshida , Yukihiko Nakata
发明人： Mikio Takeda , Yoshinobu Kakihara , Masaru Yoshida , Yukihiko Nakata
IPC分类号： C09K11/57 , H05B33/14 , H05B33/18 , H05B33/22
CPC分类号： H05B33/14 , C09K11/574
摘要： A ZnS thin-film electroluminescent element which exhibits the hysteresis phenomenon within the light emission versus applied voltage characteristics, the electric current versus applied alternating voltage characteristics, or the electric current phase versus applied alternating voltage characteristics. The ZnS element comprises a ZnS EL thin-film including Mn serving as a luminescent center with a concentration of 0.05-5.0 wt. %, and a pair of dielectric layers made of rare earth oxides or oxides groups of III, IV and V of the Periodic Table. The EL thin-film is sandwiched between the pair of the dielectric layers. The ZnS EL thin-film is made by applying the electron-beam heating evaporation technology to a ZnS pellet.
摘要翻译：一种ZnS薄膜电致发光元件，其在发光与施加的电压特性，电流对施加的交流电压特性或电流相位与施加的交变电压特性之间呈现滞后现象。 ZnS元素包括ZnS EL薄膜，其包含Mn作为浓度为0.05-5.0重量％的发光中心。％，以及由周期表的III，IV和V族的稀土氧化物或氧化物基团构成的一对电介质层。 EL薄膜夹在该对电介质层之间。 ZnS EL薄膜通过将电子束加热蒸发技术应用于ZnS颗粒而制成。

33. 发明授权

US07728251B2 Plasma processing apparatus with dielectric plates and fixing member wavelength dependent spacing 失效
标题翻译：等离子体处理装置具有电介质板和固定部件波长相关的间距
公开(公告)号：US07728251B2
公开(公告)日：2010-06-01
申请号：US11259190
申请日：2005-10-27
申请人： Tetsuya Ide , Atsushi Sasaki , Kazufumi Azuma , Yukihiko Nakata
发明人： Tetsuya Ide , Atsushi Sasaki , Kazufumi Azuma , Yukihiko Nakata
IPC分类号： B23K10/00
CPC分类号： H01J37/32238 , H01J37/32192
摘要： In a plasma processing apparatus, electromagnetic waves are radiated from slots of waveguides into a processing chamber via dielectric windows that are supported on beams, thereby generating a plasma. A substrate, which is an object of processing, is processed by the generated plasma. Dielectric plates are attached to those surfaces of the beams, which are opposed to the processing chamber. The thickness of each dielectric plate is set at ½ or more of the intra-dielectric wavelength of the electromagnetic waves. Using the plasma processing apparatus, a large-area processing can uniformly be performed.
摘要翻译：在等离子体处理装置中，电磁波通过波导管的电介质窗从波导槽从辐射到处理室中，从而产生等离子体。作为处理对象的基板由所生成的等离子体进行处理。电介质板连接到与处理室相对的梁的那些表面。每个电介质板的厚度被设定为电磁波的介电质内波长的1/2以上。使用等离子体处理装置可以均匀地进行大面积的处理。

34. 发明申请

US20090029507A1 Dielectric film, its formation method, semiconductor device using the dielectric film and its production method 审中-公开
标题翻译：电介质膜，其形成方法，使用电介质膜的半导体器件及其制造方法
公开(公告)号：US20090029507A1
公开(公告)日：2009-01-29
申请号：US11998202
申请日：2007-11-28
申请人： Masashi Goto , Yukihiko Nakata , Kazufumi Azuma , Tetsuya Okamoto
发明人： Masashi Goto , Yukihiko Nakata , Kazufumi Azuma , Tetsuya Okamoto
IPC分类号： H01L21/285 , H01L21/336
CPC分类号： H01L21/02164 , H01L21/0214 , H01L21/0217 , H01L21/02238 , H01L21/02247 , H01L21/02252 , H01L21/31662 , H01L21/3185 , H01L21/32105 , H01L21/3211
摘要： A high-quality dielectric film is formed by generating plasma of a high electron density by a method such as diluting a rare gas or raising a frequency of a power supplier, and generating oxygen atoms or nitrogen atoms of a high density. The dielectric film contains silicon oxide in which the composition ratio of silicon and oxygen is between (1:1.94) and (1:2) both inclusive, silicon nitride in which the composition ratio of silicon and nitrogen is between (1:1.94) and (1:2) both inclusive, or silicon oxynitride in which the composition ratio of silicon and nitrogen is between (3:3.84) and (3:4) both inclusive.
摘要翻译：通过稀释稀有气体或提高供电频率，并产生高密度的氧原子或氮原子的方法，产生高电子密度的等离子体，形成高质量的电介质膜。电介质膜含有其中硅和氧的组成比在（1：1.94）和（1:2）之间的硅氧化物，其中硅和氮的组成比在（1：1.94）和（1：2）或硅氮组成比在（3：3.84）和（3：4）之间的氮氧化硅。

35. 发明授权

US07307028B2 Film-forming method, method of manufacturing semiconductor device, semiconductor device, method of manufacturing display device, and display device 失效
标题翻译：薄膜形成方法，制造半导体器件的方法，半导体器件，制造显示器件的方法和显示器件
公开(公告)号：US07307028B2
公开(公告)日：2007-12-11
申请号：US10821843
申请日：2004-04-12
申请人： Masashi Goto , Kazufumi Azuma , Yukihiko Nakata
发明人： Masashi Goto , Kazufumi Azuma , Yukihiko Nakata
IPC分类号： H01L21/31
CPC分类号： H01L29/78696 , C23C16/401 , G02F1/1368 , H01L21/02164 , H01L21/02178 , H01L21/02181 , H01L21/02183 , H01L21/02189 , H01L21/02274 , H01L21/31608 , H01L21/31616 , H01L21/31637 , H01L21/31641 , H01L21/31645
摘要： Disclosed is a film-forming method, comprising supplying into a plasma processing chamber at least three kinds of gases including a silicon compound gas, an oxidizing gas, and a rare gas, the percentage of the partial pressure of the rare gas (Pr) based on the total pressure being not smaller than 85%, i.e., 85%≦Pr
摘要翻译：公开了一种成膜方法，包括向等离子体处理室供给包括硅化合物气体，氧化气体和稀有气体的至少三种气体，稀土气体（Pr）基分压的百分比总压不小于85％，即85％

36. 发明授权

US06579425B2 System and method for forming base coat and thin film layers by sequential sputter depositing 失效
标题翻译：通过顺序溅射沉积形成底涂层和薄膜层的系统和方法
公开(公告)号：US06579425B2
公开(公告)日：2003-06-17
申请号：US09906881
申请日：2001-07-16
申请人： Apostolos Voutsas , Yukihiko Nakata
发明人： Apostolos Voutsas , Yukihiko Nakata
IPC分类号： C23C1435
CPC分类号： C23C14/568 , C23C14/165
摘要： A system and method are provided to sequentially deposit a silicon dioxide base coat barrier layer adjacent a thin silicon film, to minimize the formation of water and —OH radicals. Both the base coat and thin silicon films are sputter to eliminate hydrogen chemistries. Further, the sputter processes are conducted sequentially, without breaking the vacuum seat to minimize the absorption of water in the base coat layer that conventionally occurs between deposition steps. This process eliminates the total number of process steps required, as there is no longer a need for furnace annealing the base coat before the deposition of the thin silicon film, and no longer a need for a dehydrogenation annealing step after the deposition of the thin silicon film.
摘要翻译：提供了一种系统和方法，以顺次沉积邻近薄硅膜的二氧化硅基底涂层阻挡层，以最小化水和-OH自由基的形成。底涂层和薄硅膜都被溅射以消除氢化学物质。此外，依次进行溅射处理，而不破坏真空座，以使沉积步骤之间常规发生的底涂层中的水的吸收最小化。该方法消除了所需的工艺步骤的总数，因为在沉积薄硅膜之前不再需要对底涂层进行炉退火，并且在沉积薄硅之后不再需要脱氢退火步骤电影。

37. 发明授权

US06396104B2 Thin film transistor in metal-induced crystallized region formed around a transition metal nucleus site 有权
标题翻译：金属诱导的结晶区域中的薄膜晶体管形成在过渡金属核部位周围
公开(公告)号：US06396104B2
公开(公告)日：2002-05-28
申请号：US09755679
申请日：2001-01-04
申请人： Masashi Maekawa , Yukihiko Nakata
发明人： Masashi Maekawa , Yukihiko Nakata
IPC分类号： H01L2701
CPC分类号： H01L21/02672 , H01L21/02529 , H01L21/02532 , H01L21/2022 , H01L29/458 , H01L29/66757 , H01L29/78675
摘要： A method has been provided to form a sheet of large grain crystallized silicon, in an early stage of transistor production, before the areas of the source and drain are defined. The method takes advantage of high annealing temperatures and transition metals to speed the lateral growth of silicide. By using higher temperatures, the number of amorphous enclaves is minimized and the transition metal nucleation site can be made small. A small transition metal nucleation site, in turn, can be more easily located near the center of a transistor, or where it is convenient. After annealing, the areas close to the silicide nucleation site are transformed into polycrystalline with a high electron mobility, desirable for the formation of source/drain and channel regions. Silicide products, away from the transistor active areas, are etched away when the area of the source and drain are defined. A product by process using the method of the above-described invention is also provided.
摘要翻译：在源极和漏极的区域被限定之前，已经提供了在晶体管制造的早期阶段形成大晶粒结晶硅片的方法。该方法利用高退火温度和过渡金属来加速硅化物的横向生长。通过使用较高的温度，非晶层的数量被最小化，并且可以使过渡金属成核位置变小。反过来，小的过渡金属成核位置可以更容易地位于晶体管的中心附近，或者在其方便的地方。在退火之后，接近硅化物成核位置的区域被转化为具有高电子迁移率的多晶，对于形成源极/漏极和沟道区域是期望的。当定义源极和漏极的区域时，远离晶体管有源区的硅化物产物被蚀刻掉。还提供了使用上述发明的方法的方法的产品。

38. 发明授权

US06346437B1 Single crystal TFT from continuous transition metal delivery method 失效
标题翻译：单晶TFT来自连续过渡金属的传递方式
公开(公告)号：US06346437B1
公开(公告)日：2002-02-12
申请号：US09118307
申请日：1998-07-16
申请人： Masashi Maekawa , Yukihiko Nakata
发明人： Masashi Maekawa , Yukihiko Nakata
IPC分类号： H01L21336
CPC分类号： H01L29/66757 , H01L29/78609 , H01L29/78675
摘要： A TFT fabricated from a single crystal grain, and fabrication method has been provided. A large crystal grain is made by precise control of annealment, transition metal concentration, the density of transition metal nucleation sites, and the distance between nucleation sites. In one aspect of the invention, a diffusion layer permits the continual delivery of transition metal at a rate that both supports the lateral growth of di-silicide, and large distances between nucleation sites.
摘要翻译：提供了由单晶制造的TFT及其制造方法。通过精确控制退火，过渡金属浓度，过渡金属成核位点的密度以及成核位置之间的距离，可以制得大晶粒。在本发明的一个方面，扩散层允许以支持二硅化物的横向生长和成核位置之间的大距离的速率连续输送过渡金属。

39. 发明授权

US06228693B1 Selected site, metal-induced, continuous crystallization method 失效
标题翻译：选择位点，金属诱导，连续结晶法
公开(公告)号：US06228693B1
公开(公告)日：2001-05-08
申请号：US09092831
申请日：1998-06-05
申请人： Masashi Maekawa , Yukihiko Nakata
发明人： Masashi Maekawa , Yukihiko Nakata
IPC分类号： H01L21324
CPC分类号： H01L21/02672 , H01L21/02529 , H01L21/02532 , H01L21/2022 , H01L29/458 , H01L29/66757 , H01L29/78675
摘要： A method has been provided to form a sheet of large grain crystallized silicon, in an early stage of transistor production, before the areas of the source and drain are defined. The method takes advantage of high annealing temperatures and transition metals to speed the lateral growth of silicide. By using higher temperatures, the number of amorphous enclaves is minimized and the transition metal nucleation site can be made small. A small transition metal nucleation site, in turn, can be more easily located near the center of a transistor, or where it is convenient. After annealing, the areas close to the silicide nucleation site are transformed into polycrystalline with a high electron mobility, desirable for the formation of source/drain and channel regions. Silicide products, away from the transistor active areas, are etched away when the area of the source and drain are defined. A product by process using the method of the above-described invention is also provided.
摘要翻译：在源极和漏极的区域被限定之前，已经提供了在晶体管制造的早期阶段形成大晶粒结晶硅片的方法。该方法利用高退火温度和过渡金属来加速硅化物的横向生长。通过使用较高的温度，非晶层的数量被最小化，并且可以使过渡金属成核位置变小。反过来，小的过渡金属成核位置可以更容易地位于晶体管的中心附近，或者在其方便的地方。在退火之后，接近硅化物成核位置的区域被转化为具有高电子迁移率的多晶，对于形成源极/漏极和沟道区域是期望的。当定义源极和漏极的区域时，远离晶体管有源区的硅化物产物被蚀刻掉。还提供了使用上述发明的方法的方法的产品。

40. 发明授权

US6078059A Fabrication of a thin film transistor and production of a liquid display apparatus 失效
标题翻译：制造薄膜晶体管和制造液体显示装置
公开(公告)号：US6078059A
公开(公告)日：2000-06-20
申请号：US948141
申请日：1997-10-09
申请人： Yukihiko Nakata
发明人： Yukihiko Nakata
IPC分类号： C23C16/24 , C23C16/50 , C23C16/509 , C23C16/54 , H01L21/20 , H01L21/30 , H01L21/336 , H01L21/77 , H01L21/84 , H01L29/786 , H01L29/78 , H01L33/00
CPC分类号： H01L21/2022 , C23C16/24 , C23C16/5096 , C23C16/54 , H01L21/3003 , H01L27/1214 , H01L29/66765 , H01L29/78678
摘要： A thin film transistor includes: an insulating film having a surface; a semiconductor film formed on the surface of the insulating film; a source electrode and a drain electrode which are in contact with the semiconductor film; and a gate electrode which is electrically insulated from the semiconductor film. In the thin film transistor, a portion of the semiconductor film at distances of less than 500 angstroms from the surface of the insulating film contains at least silicon including a microcrystalline structure having a conductivity of 5.times.10.sup.-9 S/cm or more. Also, a method for fabricating such a thin film transistor is disclosed. The method includes a step of forming a semiconductor film including a silicon layer having a microcrystalline structure by repeatedly performing the following steps (1) and (2): (1) forming a silicon layer on an insulating film by decomposing a material gas including Si which is introduced into a reaction chamber of a plasma chemical vapor deposition apparatus; and (2) microcrystallizing the silicon layer by introducing the hydrogen gas into the chamber to perform a hydrogen plasma treatment for the silicon layer.
摘要翻译：薄膜晶体管包括：具有表面的绝缘膜; 形成在所述绝缘膜的表面上的半导体膜; 源电极和漏电极，与半导体膜接触; 以及与半导体膜电绝缘的栅电极。在薄膜晶体管中，距离绝缘膜表面小于500埃的半导体膜的一部分至少含有包含导电率为5×10 -9 S / cm以上的微晶结构的硅。另外，公开了一种制造这种薄膜晶体管的方法。该方法包括通过重复执行以下步骤（1）和（2）来形成包括具有微晶结构的硅层的半导体膜的步骤：（1）通过分解包含Si的材料气体在绝缘膜上形成硅层将其引入到等离子体化学气相沉积装置的反应室中; 和（2）通过将氢气引入室中来对硅层进行微晶化，以对硅层进行氢等离子体处理。

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