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    • 31. 发明授权
    • Magnetic sensor array and apparatus for detecting defect using the magnetic sensor array
    • 用于使用磁传感器阵列检测缺陷的磁传感器阵列和装置
    • US09170234B2
    • 2015-10-27
    • US12447907
    • 2007-08-07
    • Jin-Yi LeeJong-Woo JunJi-Seong Hwang
    • Jin-Yi LeeJong-Woo JunJi-Seong Hwang
    • G01N27/82G01N27/90
    • G01N27/9006
    • If surface defects, near surface defects, or internal defects of a ferromagnetic substance object, a paramagnetic substance object, or a mixture object of ferromagnetic and paramagnetic substances are not quantitatively analyzed, the detected results can be differently analyzed depending on the knowledge or skill of an inspector. A defect detection apparatus according to an exemplary embodiment of the present invention includes an induced current applier, a magneto-electric converter, a signal processor, a signal converter, and a data processor. The induced current applier applies a line or surface current to an object that is to be measured by using an alternating current (AC) having a frequency varying depending on a depth to be measured. The magneto-electric converter senses a magnetic field generated from the object by the Hn e or surface current and generates a magnetic field sensing signal corresponding to a strength of the sensed magnetic field. The signal processor filters and amplifies the magnetic field sensing signal and outputs a signal corresponding to amplitude of the filtered and amplified signal. The signal converter converts the signal output from the signal processor into a digital signal. The data processor quantitatively converts an intensity of a magnetic field generated from the object into a numerical value based on the digital signal output from the signal converter.
    • 如果没有定量分析铁磁性物质对象的表面缺陷,近表面缺陷或内部缺陷,顺磁性物质物体或铁磁性和顺磁性物质的混合物体,则可以根据知识或技能进行不同的分析, 督察。 根据本发明的示例性实施例的缺陷检测装置包括感应电流施加器,磁电转换器,信号处理器,信号转换器和数据处理器。 感应电流施加器通过使用具有根据要测量的深度而变化的频率的交流电(AC)将线或表面电流施加到待测量的对象。 磁电转换器通过Hn e或表面电流感测从物体产生的磁场,并产生对应于感测磁场的强度的磁场感测信号。 信号处理器对磁场感测信号进行滤波和放大,并输出对应于滤波和放大信号幅度的信号。 信号转换器将从信号处理器输出的信号转换为数字信号。 数据处理器基于从信号转换器输出的数字信号,将从物体产生的磁场的强度定量地转换为数值。
    • 35. 发明申请
    • HAIR CLIPPER BLADE ASSEMBLY
    • 头发剪刀组件
    • US20100000093A1
    • 2010-01-07
    • US12484759
    • 2009-06-15
    • Woo Seong Hwang
    • Woo Seong Hwang
    • B26B19/20B26B19/28
    • B26B19/06
    • The present invention relates to an electric hair clipper blade assembly having a guide plate connected with a fixed blade and a movable blade that moves in a left and right direction or horizontal direction and a connection/fixed member. In particular, the present invention relates to an electric hair clipper blade assembly having fixed and movable blades with depths deeper than those of conventional fixed and movable blades and a blade body DLC-coated, on which a portion of the guide plate, the fixed blade, and the movable blade are formed, to maintain fairly good cutting power in cutting short hair or curly hair.
    • 本发明涉及一种具有与固定刀片连接的引导板和沿左右方向或水平方向移动的可动刀片的电动剪发刀片组件和连接/固定部件。 特别地,本发明涉及一种具有固定和可移动刀片的电动剪刀刀片组件,其深度比常规固定和可动刀片更深,并且具有DLC涂覆的刀片体,导向板的一部分,固定刀片 并且形成可动刀片,以在切割短发或卷发时保持相当好的切割力。
    • 37. 发明授权
    • Method for fabricating semiconductor memory device having cylinder type storage node
    • 具有圆柱型存储节点的半导体存储器件的制造方法
    • US07504300B2
    • 2009-03-17
    • US11149175
    • 2005-06-10
    • Eui-Seong Hwang
    • Eui-Seong Hwang
    • H01L21/8239
    • H01L28/91H01L27/10852
    • Disclosed is a method for fabricating a semiconductor memory device capable of preventing a bunker defect caused by a pinhole or a crack on a single metal layer used as a storage node. The method includes the steps of: forming a plurality of storage node plugs on a substrate; forming an insulation layer with a plurality of openings exposing surfaces of the plurality of storage node plugs on the substrate; forming a plurality of cylinder-type storage nodes inside of the plurality of opening in a structure that a different kind of conductive layer is formed between the same kinds of conductive layers; selectively removing the insulation layer; forming a dielectric layer on the plurality of cylinder type storage nodes; and forming a plate electrode on the dielectric layer.
    • 公开了一种制造半导体存储器件的方法,该半导体存储器件能够防止在用作存储节点的单个金属层上由针孔或裂纹引起的掩体缺陷。 该方法包括以下步骤:在衬底上形成多个存储节点插头; 形成具有多个开口的绝缘层,所述多个开口暴露在所述基板上的所述多个存储节点插塞的表面; 在相同种类的导电层之间形成不同种类的导电层的结构中,在多个开口内部形成多个圆柱型存储节点; 选择性地去除绝缘层; 在所述多个圆筒型存储节点上形成介电层; 以及在所述电介质层上形成平板电极。