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31. 发明申请

US20090051924A1 APPARATUS FOR MEASURING THICKNESS OF A SUBSTRATE 审中-公开
标题翻译：用于测量基板厚度的装置
公开(公告)号：US20090051924A1
公开(公告)日：2009-02-26
申请号：US12185888
申请日：2008-08-05
申请人： Masafumi ITO , Yasuyuki Okamura , Tatsuo Shiina , Nobuo Ishii , Tomohiro Suzuki , Chishio Koshimizu
发明人： Masafumi ITO , Yasuyuki Okamura , Tatsuo Shiina , Nobuo Ishii , Tomohiro Suzuki , Chishio Koshimizu
IPC分类号： G01B11/06
CPC分类号： G01J5/0003 , G01K11/12
摘要： An apparatus for measuring thickness is provided. A light source irradiates a front surface or a rear surface of a substrate with a light. A splitter splits the light into a reference light and a measurement light. The reference light is reflected by a reference light reflecting device. An optical path changing device changes an optical path length of light reflected from the reference light reflecting device. A light receiving device measures an interference of the reflected light from the substrate and the reference light from the reference light reflecting device. A thickness of at least one of the front surface, rear surface or inside of the substrate is measured based on a measurement of the interference.
摘要翻译：提供了一种测量厚度的装置。光源用光照射基板的前表面或后表面。分流器将光分成参考光和测量光。参考光被参考光反射装置反射。光路改变装置改变从参考光反射装置反射的光的光路长度。光接收装置测量来自基板的反射光和来自参考光反射装置的基准光的干涉。基于干涉的测量来测量衬底的前表面，后表面或内部中的至少一个的厚度。

32. 发明授权

US07296533B2 Radial antenna and plasma device using it 有权
标题翻译：径向天线和等离子体装置使用它
公开(公告)号：US07296533B2
公开(公告)日：2007-11-20
申请号：US10343221
申请日：2001-08-03
申请人： Nobuo Ishii , Kibatsu Shinohara
发明人： Nobuo Ishii , Kibatsu Shinohara
IPC分类号： C23C16/00
CPC分类号： H01J37/3222 , H01J37/32192
摘要： A plasma device includes a first conductive plate (31) in which a plurality of slots (36) are formed, a second conductive plate (32) having a microwave inlet (35) and disposed opposite to the first conductive plate (31), a ring member (34) for connecting peripheral edges of the first and second conductive plates (31, 32), and a conductive adjusting member (37) provided on said second conductive plate (32) within a radial waveguide (33) formed by the first and second conductive plates (31, 32) and serving to adjust a distance (d1, d2) up to the first conductive plate (31). With this arrangement, a desired electric field radiation distribution can be obtained without inducing abnormal discharge.
摘要翻译：等离子体装置包括其中形成有多个槽（36）的第一导电板（31），具有微波入口（35）并与第一导电板（31）相对设置的第二导电板（32），环形构件（34），用于连接第一和第二导电板（31,32）的周边边缘;以及导电调节构件（37），其设置在由第一导电板（31,32）形成的径向波导（33）内的所述第二导电板和第二导电板（31,32），用于调节距第一导电板（31）的距离（d1，d2）。利用这种布置，可以获得期望的电场辐射分布而不引起异常放电。

33. 发明申请

US20070017636A1 Plasma source and plasma processing apparatus 有权
标题翻译：等离子体源和等离子体处理装置
公开(公告)号：US20070017636A1
公开(公告)日：2007-01-25
申请号：US10558692
申请日：2004-05-28
申请人： Toshio Goto , Masaru Hori , Nobuo Ishii , Shoji Den
发明人： Toshio Goto , Masaru Hori , Nobuo Ishii , Shoji Den
IPC分类号： C23F1/00 , H01L21/306
CPC分类号： B82Y30/00 , B82Y40/00 , C01B32/162 , H01J37/32009 , H01J37/32596
摘要： A plasma source (1) is composed of a chamber (2) to which a gas should be supplied and a hollow cathode electrode member (4) which is arranged on the gas flow-out side of the chamber (2) and has a plurality of electrode holes (3) through which the gas can flow. In such a plasma source (1), microcathode plasma discharge can be performed in the electrode holes (3) of the hollow cathode electrode member (4).
摘要翻译：等离子体源（1）由供应气体的室（2）和设置在室（2）的气体流出侧的中空阴极电极构件（4）组成，并且具有多个的气体可以流过的电极孔（3）。在这种等离子体源（1）中，可以在中空阴极电极部件（4）的电极孔（3）中进行微阴极等离子体放电。

34. 发明申请

US20060124244A1 Plasma processor and plasma processing method 有权
标题翻译：等离子处理器和等离子体处理方法
公开(公告)号：US20060124244A1
公开(公告)日：2006-06-15
申请号：US10543857
申请日：2004-01-26
申请人： Nobuo Ishii , Kibatsu Shinohara
发明人： Nobuo Ishii , Kibatsu Shinohara
IPC分类号： C23F1/00 , C23C16/00
CPC分类号： H01J37/32211 , H01J37/32192 , H01P5/1022
摘要： A plasma processor includes a table on which a target object is to be placed, a vessel which accommodates the table and in which a plasma is to be generated by a high-frequency electromagnetic field, a high-frequency oscillator (30) which generates a high-frequency electromagnetic field, and a reference oscillator (34) which is lower in output power than the high-frequency oscillator (30) and stable in oscillation frequency. A reference signal generated by the reference oscillator (34) is injected into the high-frequency oscillator (30) to fix an oscillation frequency of the high-frequency oscillator (30) at a frequency of a reference signal. Therefore, accurate load matching is performed to improve an energy efficiency when an automatic matching device provided between the high-frequency oscillator (30) and vessel is designed based on the frequency of the reference signal.
摘要翻译：等离子体处理器包括：待放置目标物体的台，容纳台的容器，高频电磁场要产生等离子体;高频振荡器，高频电磁场以及输出功率比高频振荡器（30）低的基准振荡器（34），振荡频率稳定。由基准振荡器（34）产生的参考信号被注入到高频振荡器（30）中，以将高频振荡器（30）的振荡频率固定在参考信号的频率上。因此，当基于参考信号的频率设计在高频振荡器（30）和容器之间提供的自动匹配装置时，执行精确的负载匹配以提高能量效率。

35. 发明申请

US20050271116A1 Method and apparatus for measuring temperature of substrate 有权
公开(公告)号：US20050271116A1
公开(公告)日：2005-12-08
申请号：US11196402
申请日：2005-08-04
申请人： Masafumi Ito , Yasuyuki Okamura , Tatsuo Shiina , Nobuo Ishii , Tomohiro Suzuki , Chishio Koshimizu
发明人： Masafumi Ito , Yasuyuki Okamura , Tatsuo Shiina , Nobuo Ishii , Tomohiro Suzuki , Chishio Koshimizu
IPC分类号： G01J5/00 , G01K11/12 , H01L21/324 , G01K1/16
CPC分类号： G01J5/0003 , G01K11/12
摘要： The temperature of the surface and/or inside of a substrate is measured by irradiating the front surface or rear surface of the substrate, whose temperature is to be measured, with light and measuring the interference of a reflected light from the substrate and a reference light. A method and apparatus for measuring temperature or thickness which is suitable for directly measuring the temperature of the outermost surface layer of a substrate, and an apparatus for treating a substrate for an electronic device, which uses such method, are provided.

36. 发明授权

US06911617B2 Plasma device and plasma generating method 失效
标题翻译：等离子体装置和等离子体生成方法
公开(公告)号：US06911617B2
公开(公告)日：2005-06-28
申请号：US10466306
申请日：2002-01-18
申请人： Nobuo Ishii , Makoto Ando
发明人： Nobuo Ishii , Makoto Ando
IPC分类号： H01J37/32 , B23K10/00
CPC分类号： H01J37/3222 , H01J37/32192 , H01J37/32293
摘要： A desired component of an electromagnetic field in a slot antenna is selectively taken to be supplied into a vessel for generating a plasma. The angle of inclination of slots (36) relative to the circumferential direction of a radiation surface (31) of the slot antenna (30) is decreased as the position of the slots approaches the periphery of the radiation surface 31 from the center O of the radiation surface.
摘要翻译：选择性地将缝隙天线中的电磁场的期望分量提供到用于产生等离子体的容器中。狭槽天线（30）的辐射表面（31）相对于圆周方向的倾斜角度随着狭缝的位置从辐射面31的中心O接近辐射表面31的周边而减小辐射面。

37. 发明授权

US06713968B2 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US06713968B2
公开(公告)日：2004-03-30
申请号：US09945822
申请日：2001-09-05
申请人： Nobuo Ishii , Yasuyoshi Yasaka
发明人： Nobuo Ishii , Yasuyoshi Yasaka
IPC分类号： H01J724
CPC分类号： H01J37/32192
摘要： A plasma processing apparatus has a process container, a carriage housed in the process container and having a surface for carrying an object to be processed, and a slot antenna disposed to oppose the carrying surface of the carriage and having a radiation plane formed with a plurality of slots so as to radiate electromagnetic fields to the inside of the process container through the plurality of slots. The slot antenna radiates the electromagnetic fields in a direction oblique to the normal direction of the radiation plane.
摘要翻译：等离子体处理装置具有处理容器，容纳在处理容器中的托架，具有用于承载待加工物体的表面和与托架的承载面相对的槽天线，并且具有形成有多个的槽，以便通过多个槽将电磁场辐射到处理容器的内部。缝隙天线沿着与辐射平面的法线方向倾斜的方向辐射电磁场。

38. 发明授权

US06528752B1 Plasma processing apparatus and plasma processing method 失效
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US06528752B1
公开(公告)日：2003-03-04
申请号：US09595476
申请日：2000-06-16
申请人： Nobuo Ishii , Yasuyoshi Yasaka , Makoto Ando , Naohisa Goto
发明人： Nobuo Ishii , Yasuyoshi Yasaka , Makoto Ando , Naohisa Goto
IPC分类号： B23K1000
CPC分类号： H01J37/321 , H01J37/32082 , H01J37/32568
摘要： A plasma-assisted processing system has a lifting mechanism capable of vertically moving a microwave power unit and a waveguide to adjust the level of a planar slot antenna disposed on an expanded lower end part of the waveguide. A space extending under the antenna is surrounded by a shielding member. An optical sensor having an array of photosensors is disposed on the outer side of a window formed in the side wall of a vacuum vessel to monitor the lower limit level of a cease region for a plasma (cease level). An ideal distance between the cease level and the antenna is determined beforehand and the level of the antenna is adjusted on the basis of a measured cease level so that the antenna is spaced the ideal distance apart from the cease level. Since the difference between the cease level and a level X0 for the cutoff density of an X-wave is fixed, the level X0 may be monitored instead of the cease level.
摘要翻译：等离子体辅助处理系统具有能够垂直移动微波功率单元和波导的升降机构，以调节布置在波导的扩展的下端部的平面缝隙天线的高度。在天线下方延伸的空间被屏蔽构件包围。具有光电传感器阵列的光学传感器设置在形成在真空容器的侧壁中的窗口的外侧上，以监测等离子体的停止区域的下限水平（停止水平）。预先确定停止电平和天线之间的理想距离，并且基于测量的停止电平来调节天线的电平，使得天线与停止电平相隔一段理想距离。由于X波的截止密度的停止电平和电平X0之间的差是固定的，因此可以监视电平X 0而不是停止电平。

39. 发明授权

US06404134B2 Plasma processing system 有权
标题翻译：等离子体处理系统
公开(公告)号：US06404134B2
公开(公告)日：2002-06-11
申请号：US09789612
申请日：2001-02-22
申请人： Nobuo Ishii
发明人： Nobuo Ishii
IPC分类号： H01J150
CPC分类号： H01J37/32082
摘要： A plasma processing system includes a processing vessel for housing therein an object to be processed. In the upper portion of the processing vessel, a substantially disk-shaped electrode plate having a facing surface facing the object is provided. A radio-frequency wave supply unit supplies radio-frequency waves having a flattened waveform which forms substantially a sinusoidal wave whose crest and trough portions are substantially horizontally flattened. The radio-frequency waves supplied from the supply unit are propagated in diametrically opposite directions on the facing surface of the electrode to form standing waves. Similar to the supplied radio-frequency waves, the standing waves also have a waveform which forms substantially a sinusoidal wave whose crest and trough portions are substantially horizontally flattened.
摘要翻译：等离子体处理系统包括用于在其中容纳待加工物体的处理容器。在处理容器的上部设置有具有朝向物体的面对面的大致圆盘状的电极板。射频波供给单元提供具有扁平波形的射频波形，其基本上形成波峰和波谷部分基本水平地平坦化的正弦波。从供电单元提供的射频波在电极的相对表面沿径向相反的方向传播，形成驻波。与所提供的射频波相似，驻波也具有基本上形成波峰和谷部大致水平平坦的正弦波的波形。

40. 发明授权

US06322662B1 Plasma treatment system 失效
标题翻译：等离子体处理系统
公开(公告)号：US06322662B1
公开(公告)日：2001-11-27
申请号：US09494031
申请日：2000-01-31
申请人： Nobuo Ishii , Yasuo Kobayashi , Tamotsu Morimoto , Makoto Ando , Naohisa Goto
发明人： Nobuo Ishii , Yasuo Kobayashi , Tamotsu Morimoto , Makoto Ando , Naohisa Goto
IPC分类号： H05H100
CPC分类号： H01J37/32211 , H01J37/32192 , H05H1/46
摘要： In a plasma treatment system, the increase of the electric field of a treatment space facing the central portion of a flat antenna member is relieved, and the ununiformity of the density of plasma in a plasma forming region is relieved. Microwave generated by a microwave generator 50 are supplied from a waveguide 52 to a flat antenna member 44. The flat antenna member 44 has a plurality of slots 60. The space between adjacent two of the slots 60 is longer than the guide wavelength of microwaves in the waveguide 52, and the length of each of the slots 60 is shorter than half of the guide wavelength. The slots 60 are arranged in a region other than the central portion of the flat antenna member 44 so as not to be axisymmetric.
摘要翻译：在等离子体处理系统中，减轻了面向平坦天线构件的中心部分的处理空间的电场的增加，等离子体形成区域中的等离子体的密度不均匀被缓解。微波发生器产生的微波 50由波导52供给到平面天线构件44.平坦天线构件44具有多个槽60.相邻的两个槽60之间的空间比波导52中的微波的引导波长长，每个槽60的长度短于导向波长的一半。狭槽60布置在平坦天线构件44的除中心部分之外的区域中以便不是轴对称的。

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