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31. 发明授权

US08563096B2 Vertical film formation apparatus and method for using same 有权
标题翻译：垂直成膜装置及其使用方法
公开(公告)号：US08563096B2
公开(公告)日：2013-10-22
申请号：US12954767
申请日：2010-11-26
申请人： Masanobu Matsunaga , Pao-Hwa Chou , Masato Yonezawa , Masayuki Hasegawa , Kazuhide Hasebe
发明人： Masanobu Matsunaga , Pao-Hwa Chou , Masato Yonezawa , Masayuki Hasegawa , Kazuhide Hasebe
IPC分类号： C23C16/02 , H05H1/24
CPC分类号： C23C16/345 , C23C16/4404 , C23C16/45542 , C23C16/45546
摘要： A method for using a vertical film formation apparatus includes performing a coating process inside the process container without product target objects present therein to cover an inner surface of the process container with a coating film, and then performing a film formation process inside the process container accommodating the holder with the product target objects placed thereon to form a predetermined film on the product target objects. The coating process alternately supplies the first and second process gases into the process container without turning either of the first and second process gases into plasma. The film formation process alternately supplies the first and second process gases into the process container while turning at least one of the first and second process gases into plasma.
摘要翻译：使用垂直成膜装置的方法包括在其中没有产品目标物体的处理容器内部进行涂覆处理以用涂膜覆盖处理容器的内表面，然后在容纳处理容器内部进行成膜处理具有放置在其上的产品目标物体的保持器，以在产品目标物体上形成预定的膜。涂覆过程交替地将第一和第二工艺气体提供到工艺容器中，而不将第一和第二工艺气体中的任何一种转化为等离子体。成膜过程将第一和第二处理气体交替地供给到处理容器中，同时将第一和第二处理气体中的至少一个转化为等离子体。

32. 发明授权

US08426117B2 Mask pattern forming method, fine pattern forming method, and film deposition apparatus 有权
标题翻译：掩模图案形成方法，精细图案形成方法和成膜装置
公开(公告)号：US08426117B2
公开(公告)日：2013-04-23
申请号：US12567834
申请日：2009-09-28
申请人： Kazuhide Hasebe , Shigeru Nakajima , Jun Ogawa , Hiroki Murakami
发明人： Kazuhide Hasebe , Shigeru Nakajima , Jun Ogawa , Hiroki Murakami
IPC分类号： G03F7/26
CPC分类号： H01L21/027 , C23C16/02 , C23C16/402 , C23C16/403 , C23C16/45536 , G03F7/40 , H01L21/02164 , H01L21/02178 , H01L21/02219 , H01L21/02274 , H01L21/0228 , H01L21/0274 , H01L21/0337 , H01L21/0338 , H01L21/31138 , H01L21/31144 , H01L21/31608 , H01L21/31616 , H01L21/32139 , H01L21/76816
摘要： In a mask pattern forming method, a resist film is formed over a thin film, the resist film is processed into resist patterns having a predetermined pitch by photolithography, slimming of the resist patterns is performed, and an oxide film is formed on the thin film and the resist patterns after an end of the slimming step in a film deposition apparatus by supplying a source gas and an oxygen radical or an oxygen-containing gas. In the mask pattern forming method, the slimming and the oxide film forming are continuously performed in the film deposition apparatus.
摘要翻译：在掩模图案形成方法中，在薄膜上形成抗蚀剂膜，通过光刻将抗蚀剂膜加工成具有预定间距的抗蚀剂图案，进行抗蚀剂图案的减薄，并且在薄膜上形成氧化膜以及通过供给源气体和氧自由基或含氧气体在成膜装置中减肥步骤结束后的抗蚀剂图案。在掩模图案形成方法中，在成膜装置中连续进行纤维化和氧化膜形成。

33. 发明授权

US08357619B2 Film formation method for forming silicon-containing insulating film 有权
标题翻译：用于形成含硅绝缘膜的成膜方法
公开(公告)号：US08357619B2
公开(公告)日：2013-01-22
申请号：US13040565
申请日：2011-03-04
申请人： Kazuhide Hasebe , Shigeru Nakajima , Jun Ogawa
发明人： Kazuhide Hasebe , Shigeru Nakajima , Jun Ogawa
IPC分类号： H01L21/00
CPC分类号： C23C16/452 , C23C16/345 , C23C16/402 , C23C16/45536 , H01L21/02164 , H01L21/02219 , H01L21/0228 , H01L21/31612
摘要： A silicon-containing insulating film is formed on a target substrate by CVD, in a process field to be selectively supplied with a first process gas including di-iso-propylaminosilane gas and a second process gas including an oxidizing gas or nitriding gas. The film is formed by performing a plurality of times a cycle alternately including first and second steps. The first step performs supply of the first process gas, thereby forming an adsorption layer containing silicon on a surface of the target substrate. The second performs supply of the second process gas, thereby oxidizing or nitriding the adsorption layer on the surface of the target substrate. The second step includes an excitation period of supplying the second process gas to the process field while exciting the second process gas by an exciting mechanism.
摘要翻译：在目标基板上通过CVD形成含硅绝缘膜，在选择性地供给包含二异丙基氨基硅烷气体的第一工艺气体和包含氧化性气体或氮化气体的第二工艺气体的工艺领域中。通过交替地执行包括第一和第二步骤的循环的多次来形成膜。第一步进行第一处理气体的供给，由此在目标基板的表面形成含有硅的吸附层。第二工序气体供给第二工序气体，从而氧化或氮化目标衬底表面上的吸附层。第二步骤包括通过激励机构激励第二处理气体的第二处理气体供应给处理场的激励周期。

34. 发明授权

US08178448B2 Film formation method and apparatus for semiconductor process 有权
标题翻译：用于半导体工艺的成膜方法和装置
公开(公告)号：US08178448B2
公开(公告)日：2012-05-15
申请号：US12852094
申请日：2010-08-06
申请人： Nobutake Nodera , Masanobu Matsunaga , Kazuhide Hasebe , Koto Umezawa , Pao-Hwa Chou
发明人： Nobutake Nodera , Masanobu Matsunaga , Kazuhide Hasebe , Koto Umezawa , Pao-Hwa Chou
IPC分类号： H01L21/31
CPC分类号： H01L21/0217 , C23C16/345 , C23C16/45527 , C23C16/45542 , C23C16/45546 , H01L21/0228 , H01L21/3141 , H01L21/3185
摘要： Disclosed is a method for using a film formation apparatus to form a silicon nitride film by CVD on target substrates while suppressing particle generation. The apparatus includes a process container and an exciting mechanism attached on the process container. The method includes conducting a pre-coating process by performing pre-cycles and conducting a film formation process by performing main cycles. Each of the pre-cycles and main cycles alternately includes a step of supplying a silicon source gas and a step of supplying a nitriding gas with steps of exhausting gas from inside the process container interposed therebetween. The pre-coating process includes no period of exciting the nitriding gas by the exciting mechanism. The film formation process repeats a first cycle set that excites the nitriding gas by the exciting mechanism and a second cycle that does not excite the nitriding gas by the exciting mechanism.
摘要翻译：公开了一种使用成膜装置在目标基板上通过CVD形成氮化硅膜同时抑制颗粒产生的方法。该装置包括附着在处理容器上的处理容器和激励机构。该方法包括通过执行预循环并通过执行主循环进行成膜过程进行预涂工艺。预循环和主循环中的每一个交替地包括供给硅源气体的步骤和从氮化气体供给步骤的步骤，该步骤从夹在其间的处理容器内部排出气体。预涂工艺不包括激发机构激发氮化气体的时间。成膜过程重复利用激发机构激发氮化气体的第一循环组和不由激发机构激发氮化气体的第二循环。

35. 发明申请

US20120103256A1 VERTICAL HEAT TREATMENT APPARATUS 有权
标题翻译：垂直热处理设备
公开(公告)号：US20120103256A1
公开(公告)日：2012-05-03
申请号：US13284269
申请日：2011-10-28
申请人： Kazuhide Hasebe
发明人： Kazuhide Hasebe
IPC分类号： C23C16/46 , C23C16/52 , C23C16/458 , B05C11/00 , B05C13/00
CPC分类号： C23C16/24 , B05C11/00 , B05C13/02 , C23C16/45574 , C23C16/45578 , C23C16/4583 , C23C16/4584 , C23C16/4588 , H01L21/67303 , H01L21/67309
摘要： Provided is a vertical heat treatment apparatus which performs a film-forming process for substrates by supplying a film-forming gas to a plurality of substrates loaded onto a substrate supporter. The substrate supporter is rotated around an inclination axis, and the apparatus includes: a plurality of main holders which are provided at every reception position of the substrates in the substrate supporter and respectively supports the peripheries of the substrates at positions separated from each other in the circumferential direction; and first and second auxiliary holders which are located to be separated from the main holders in the circumferential direction and whose tops are lower than those of the main holders. Each substrate alternates between a position supported by the first auxiliary holder and the main holders and a position supported by the second auxiliary holder and the main holders every rotation of the substrate supporter.
摘要翻译：提供一种垂直热处理装置，其通过向装载到基板支撑体上的多个基板供给成膜气体来对基板进行成膜处理。基板支撑体围绕倾斜轴线旋转，并且该装置包括：多个主保持器，其设置在基板支撑件中的基板的每个接收位置处，并且分别支撑基板的周边在彼此分离的位置圆周方向以及第一和第二辅助保持器，其位于与主保持器在圆周方向上分离并且其顶部低于主保持器的顶部。每个基板在由第一辅助保持器支撑的位置和主保持器之间交替位置，并且每个旋转基板支撑件由第二辅助保持器和主保持件支撑的位置交替。

36. 发明授权

US08168375B2 Patterning method 有权
标题翻译：图案化方法
公开(公告)号：US08168375B2
公开(公告)日：2012-05-01
申请号：US12441007
申请日：2008-06-06
申请人： Shigeru Nakajima , Kazuhide Hasebe , Pao-Hwa Chou , Mitsuaki Iwashita , Reiji Niino
发明人： Shigeru Nakajima , Kazuhide Hasebe , Pao-Hwa Chou , Mitsuaki Iwashita , Reiji Niino
IPC分类号： G03F7/00 , G03F7/26 , G03F7/40
CPC分类号： H01L21/3086 , G03F7/40 , H01L21/02164 , H01L21/02219 , H01L21/02274 , H01L21/3088 , H01L21/31608
摘要： Disclosed is a patterning method including: forming a first film on a substrate; forming a multi-layered film including a resist film on the first film; forming a patterned resist film having a preset pattern by patterning the resist film by photolithography; forming a silicon oxide film different from the first film on the patterned resist film and the first film by alternately supplying a first gas containing organic silicon and a second gas containing an activated oxygen species to the substrate; etching the silicon oxide film to thereby form a sidewall spacer on a sidewall of the patterned resist film; removing the patterned resist film; and processing the first film by using the sidewall spacer as a mask.
摘要翻译：公开了一种图案化方法，包括：在基板上形成第一膜; 在所述第一膜上形成包括抗蚀剂膜的多层膜; 通过光刻对图案化抗蚀剂膜形成具有预设图案的图案化抗蚀剂膜; 在所述图案化的抗蚀剂膜和所述第一膜上形成与所述第一膜不同的氧化硅膜，通过交替地向所述基板供给含有有机硅的第一气体和含有活性氧的第二气体; 蚀刻氧化硅膜，从而在图案化抗蚀剂膜的侧壁上形成侧壁间隔物; 去除图案化的抗蚀剂膜; 以及通过使用侧壁间隔件作为掩模来处理第一膜。

37. 发明授权

US08168270B2 Film formation method and apparatus for semiconductor process 有权
标题翻译：用于半导体工艺的成膜方法和装置
公开(公告)号：US08168270B2
公开(公告)日：2012-05-01
申请号：US11896752
申请日：2007-09-05
申请人： Kazuhide Hasebe , Yoshihiro Ishida , Takehiko Fujita , Jun Ogawa , Shigeru Nakajima
发明人： Kazuhide Hasebe , Yoshihiro Ishida , Takehiko Fujita , Jun Ogawa , Shigeru Nakajima
IPC分类号： C23C16/513
CPC分类号： C23C16/45525 , C23C16/45527 , C23C16/45542 , C23C16/45544
摘要： An oxide film is formed on a target substrate by CVD, in a process field to be selectively supplied with a first process gas including a source gas containing a film source element and no amino group, a second process gas including an oxidizing gas, and a third process gas including a preliminary treatment gas. A first step includes an excitation period of supplying the third process gas excited by an exciting mechanism, thereby performing a preliminary treatment on the target substrate by preliminary treatment gas radicals. A second step performs supply of the first process gas, thereby adsorbing the film source element on the target substrate. A third step includes an excitation period of supplying the second process gas excited by an exciting mechanism, thereby oxidizing the film source element adsorbed on the target substrate by oxidizing gas radicals.
摘要翻译：在目标基板上通过CVD形成氧化膜，在选择性地供给包括含有膜源元素而不含氨基的源气体的第一工艺气体的工艺领域中，包含氧化气体的第二工艺气体和包括初步处理气体的第三工艺气体。第一步骤包括供给由激励机构激励的第三处理气体的激发期，由此通过预处理气体基团对目标基板进行预处理。第二步进行第一处理气体的供给，从而将膜源元件吸附在目标基板上。第三步骤包括供给由激励机构激励的第二处理气体的激励周期，从而通过氧化气体基团氧化吸附在目标基板上的膜源元件。

38. 发明授权

US08080477B2 Film formation apparatus and method for using same 有权
标题翻译：成膜装置及其使用方法
公开(公告)号：US08080477B2
公开(公告)日：2011-12-20
申请号：US12285513
申请日：2008-10-07
申请人： Nobutake Nodera , Jun Sato , Masanobu Matsunaga , Kazuhide Hasebe
发明人： Nobutake Nodera , Jun Sato , Masanobu Matsunaga , Kazuhide Hasebe
IPC分类号： H01L21/461 , H01L21/331 , C23C16/452
CPC分类号： H01L21/3185 , C23C16/345 , C23C16/4405 , C23C16/45519
摘要： A method for using a film formation apparatus for a semiconductor process to form a thin film on a target substrate inside a reaction chamber includes performing a cleaning process to remove a by-product film deposited on a predetermined region in a gas route from a film formation gas supply system, which supplies a film formation gas contributory to film formation, through the reaction chamber to an exhaust system, by alternately repeating an etching step and an exhaust step a plurality of times in a state where the reaction chamber does not accommodate the target substrate. The etching step includes supplying a cleaning gas in an activated state for etching the by-product film onto the predetermined region, thereby etching the by-product film. The exhaust step includes stopping supply of the cleaning gas and exhausting gas by the exhaust system from a space in which the predetermined region is present.
摘要翻译：使用半导体工艺的成膜装置在反应室内的目标基板上形成薄膜的方法包括进行清洗处理以从成膜的气体路径中除去沉积在预定区域上的副产物膜气体供给系统，其通过在反应室不容纳目标的状态下交替重复蚀刻步骤和排气步骤多次，通过反应室向排气系统提供用于成膜的成膜气体基质。蚀刻步骤包括将处于活化状态的清洁气体供给到预定区域上以蚀刻副产物膜，从而蚀刻副产物膜。排气步骤包括停止由排气系统从存在预定区域的空间供应清洁气体和排出气体。

39. 发明授权

US08080290B2 Film formation method and apparatus for semiconductor process 有权
标题翻译：用于半导体工艺的成膜方法和装置
公开(公告)号：US08080290B2
公开(公告)日：2011-12-20
申请号：US12320018
申请日：2009-01-14
申请人： Kazuhide Hasebe , Nobutake Nodera , Masanobu Matsunaga , Jun Satoh , Pao-Hwa Chou
发明人： Kazuhide Hasebe , Nobutake Nodera , Masanobu Matsunaga , Jun Satoh , Pao-Hwa Chou
IPC分类号： H05H1/24 , C23C16/00
CPC分类号： H01L21/3185 , C23C16/345 , C23C16/45542
摘要： A film formation method is used for forming a silicon nitride film on a target substrate by repeating a plasma cycle and a non-plasma cycle a plurality of times, in a process field configured to be selectively supplied with a first process gas containing a silane family gas and a second process gas containing a nitriding gas and communicating with an exciting mechanism for exciting the second process gas to be supplied. The method includes obtaining a relation formula or relation table that represents relationship of a cycle mixture manner of the plasma cycle and the non-plasma cycle relative to a film quality factor of the silicon nitride film; determining a specific manner of the cycle mixture manner based on a target value of the film quality factor with reference to the relation formula or relation table; and arranging the film formation process in accordance with the specific manner.
摘要翻译：使用成膜方法在目标衬底上形成氮化硅膜，通过重复等离子体循环和非等离子体循环多次，在被配置为选择性地供给包含硅烷族的第一工艺气体的工艺过程中气体和含有氮化气体的第二工艺气体，并与用于激发待供应的第二工艺气体的激励机构连通。该方法包括获得表示等离子体循环与非等离子体循环的循环混合方式相对于氮化硅膜的膜质量因子的关系的关系式或关系表; 参照关系公式或关系表，基于电影品质因子的目标值确定循环混合方式的具体方式; 并根据具体方式布置成膜处理。

40. 发明申请

US20110287629A1 SILICON FILM FORMATION METHOD AND SILICON FILM FORMATION APPARATUS 审中-公开
标题翻译：硅胶膜形成方法和硅胶膜形成装置
公开(公告)号：US20110287629A1
公开(公告)日：2011-11-24
申请号：US13110333
申请日：2011-05-18
申请人： Akinobu KAKIMOTO , Satoshi TAKAGI , Jyunji ARIGA , Norifumi KIMURA , Kazuhide HASEBE
发明人： Akinobu KAKIMOTO , Satoshi TAKAGI , Jyunji ARIGA , Norifumi KIMURA , Kazuhide HASEBE
IPC分类号： H01L21/285 , H01L21/306
CPC分类号： H01L21/76876 , C23C16/045 , C23C16/24 , H01L21/28556 , H01L21/76877
摘要： A silicon film formation method includes a first film formation operation, an etching operation, and a second film formation operation. In the first film formation operation, a first silicon film is formed to fill the groove of the object to be processed. In the etching operation, an opening of the groove is widened by etching the first silicon film formed in the first film formation operation. In the second film formation operation, a second silicon film is formed on the groove having the opening widened in the etching operation to fill the groove. Accordingly, a silicon film is formed on a groove of an object to be processed having the groove provided thereon.
摘要翻译：硅膜形成方法包括第一成膜操作，蚀刻操作和第二成膜操作。在第一成膜操作中，形成第一硅膜以填充待处理物体的凹槽。在蚀刻操作中，通过蚀刻在第一成膜操作中形成的第一硅膜来加宽槽的开口。在第二成膜操作中，在蚀刻操作中在开槽加宽的槽上形成第二硅膜以填充凹槽。因此，在其上设置有沟槽的被处理物体的沟槽上形成硅膜。

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