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31. 发明申请

US20090298268A1 Method of fabricating poly-crystalline silicon thin film and method of fabricating transistor using the same 审中-公开
标题翻译：制造多晶硅薄膜的方法和使用其制造晶体管的方法
公开(公告)号：US20090298268A1
公开(公告)日：2009-12-03
申请号：US12457586
申请日：2009-06-16
申请人： Jang-yeon Kwon , Min-koo Han , Se-young Cho , Kyung-bae Park , Do-young Kim , Min-cheol Lee , Sang-myeon Han , Takashi Noguchi , Young-soo Park , Ji-sim Jung
发明人： Jang-yeon Kwon , Min-koo Han , Se-young Cho , Kyung-bae Park , Do-young Kim , Min-cheol Lee , Sang-myeon Han , Takashi Noguchi , Young-soo Park , Ji-sim Jung
IPC分类号： H01L21/336 , H01L21/205
CPC分类号： H01L21/02532 , H01L21/02164 , H01L21/02274 , H01L21/02354 , H01L21/02595 , H01L21/0262 , H01L21/02686 , H01L21/2026 , H01L21/31608 , H01L29/4908 , H01L29/66757 , H01L29/78675
摘要： A method of fabricating a poly-Si thin film and a method of fabricating a poly-Si TFT using the same are provided. The poly-Si thin film is formed at a low temperature using ICP-CVD. After the ICP-CVD, ELA is performed while increasing energy by predetermined steps. A poly-Si active layer and a Si02 gate insulating layer are deposited at a temperature of about 150° C. using ICP-CVD. The poly-Si has a large grain size of about 3000 A or more. An interface trap density of the Si02 can be as high as lo∥/cm2. A transistor having good electrical characteristics can be fabricated at a low temperature and thus can be formed on a heat tolerant plastic substrate.
摘要翻译：提供一种制造多晶硅薄膜的方法和使用其制造多晶硅TFT的方法。使用ICP-CVD在低温下形成多晶硅薄膜。在ICP-CVD之后，在通过预定步骤增加能量的同时执行ELA。使用ICP-CVD在约150℃的温度下沉积多晶硅有源层和SiO 2栅极绝缘层。多晶硅具有约3000A以上的大晶粒尺寸。 SiO 2的界面陷阱密度可以高达lo // / cm2。具有良好电特性的晶体管可以在低温下制造，因此可以形成在耐热塑料基板上。

32. 发明申请

US20090142887A1 Methods of manufacturing an oxide semiconductor thin film transistor 有权
标题翻译：制造氧化物半导体薄膜晶体管的方法
公开(公告)号：US20090142887A1
公开(公告)日：2009-06-04
申请号：US12153651
申请日：2008-05-22
申请人： Kyoung-seok Son , Sang-yoon Lee , Myung-kwan Ryu , Tae-sang Kim , Jang-yeon Kwon , Kyung-bae Park , Ji-sim Jung
发明人： Kyoung-seok Son , Sang-yoon Lee , Myung-kwan Ryu , Tae-sang Kim , Jang-yeon Kwon , Kyung-bae Park , Ji-sim Jung
IPC分类号： H01L21/84
CPC分类号： H01L29/7869 , H01L29/66969
摘要： Methods of manufacturing an oxide semiconductor thin film transistor are provided. The methods include forming a gate on a substrate, and a gate insulating layer on the substrate to cover the gate. A channel layer, which is formed of an oxide semiconductor, may be formed on the gate insulating layer. Source and drain electrodes may be formed on opposing sides of the channel layer. The method includes forming supplying oxygen to the channel layer, forming a passivation layer to cover the source and drain electrodes and the channel layer, and performing an annealing process after forming the passivation layer.
摘要翻译：提供了制造氧化物半导体薄膜晶体管的方法。所述方法包括在衬底上形成栅极，以及在衬底上形成栅极绝缘层以覆盖栅极。可以在栅极绝缘层上形成由氧化物半导体形成的沟道层。源极和漏极可以形成在沟道层的相对侧上。所述方法包括：向所述沟道层形成供氧，形成钝化层以覆盖所述源漏电极和所述沟道层，以及在形成所述钝化层之后进行退火处理。

33. 发明申请

US20090140243A1 Oxide semiconductor thin film transistors and fabrication methods thereof 有权
标题翻译：氧化物半导体薄膜晶体管及其制造方法
公开(公告)号：US20090140243A1
公开(公告)日：2009-06-04
申请号：US12219661
申请日：2008-07-25
申请人： Tae-sang Kim , Sang-yoon Lee , Myung-kwan Ryu , Jang-yeon Kwon , Kyung-bae Park , Kyung-seok Son , Ji-sim Jung
发明人： Tae-sang Kim , Sang-yoon Lee , Myung-kwan Ryu , Jang-yeon Kwon , Kyung-bae Park , Kyung-seok Son , Ji-sim Jung
IPC分类号： H01L29/22 , H01L21/34
CPC分类号： H01L29/7869 , H01L21/02554 , H01L21/02565 , H01L21/02614 , H01L21/02631
摘要： Oxide semiconductor thin film transistors (TFT) and methods of manufacturing the same are provided. The methods include forming a channel layer on a substrate, forming source and drain electrodes at opposing sides of the channel layer, and oxidizing a surface of the channel layer by placing an oxidizing material in contact with the surface of the channel layer, reducing carriers on the surface of the channel layer. Due to the oxidizing agent treatment of the surface of the channel layer, excessive carriers that are generated naturally, or during the manufacturing process, may be more effectively controlled.
摘要翻译：提供氧化物半导体薄膜晶体管（TFT）及其制造方法。所述方法包括在衬底上形成沟道层，在沟道层的相对侧形成源极和漏极，并且通过将氧化材料与沟道层的表面相接触来氧化沟道层的表面，通道层的表面。由于氧化剂处理通道层的表面，可以更有效地控制天然产生的过量载体或制造过程中产生的过量载体。

34. 发明申请

US20090127560A1 Poly-crystalline thin film, thin film transistor formed from a poly-crystalline thin film and methods of manufacturing the same 有权
标题翻译：由多晶薄膜形成的多晶薄膜，薄膜晶体管及其制造方法
公开(公告)号：US20090127560A1
公开(公告)日：2009-05-21
申请号：US12219265
申请日：2008-07-18
申请人： Kyung-bae Park , Seon-mi Yoon , Sang-yoon Lee , Jae-young Choi , Hyeon-jin Shin , Myung-kwan Ryu , Tae-sang Kim , Jang-yeon Kwon , Kyung-seok Son , Ji-sim Jung
发明人： Kyung-bae Park , Seon-mi Yoon , Sang-yoon Lee , Jae-young Choi , Hyeon-jin Shin , Myung-kwan Ryu , Tae-sang Kim , Jang-yeon Kwon , Kyung-seok Son , Ji-sim Jung
IPC分类号： H01L29/786 , H01L21/20 , H01L21/336 , H01L29/04
CPC分类号： H01L21/02675 , H01L21/02532 , H01L29/66765 , Y10S977/762 , Y10S977/778
摘要： Example embodiments relate to a poly-crystalline silicon (Si) thin film, a thin film transistor (TFT) formed from a poly-crystalline silicon (Si) thin film and methods of manufacturing the same. The method of manufacturing the poly-crystalline Si thin film includes forming an active layer formed of amorphous Si on a substrate, coating a gold nanorod on the active layer, and irradiating infrared rays onto the gold nanorod to crystallize the active layer.
摘要翻译：示例性实施例涉及由多晶硅（Si）薄膜形成的多晶硅（Si）薄膜，薄膜晶体管（TFT）及其制造方法。多晶Si薄膜的制造方法包括在基板上形成由非晶Si形成的有源层，在有源层上涂覆金纳米棒，并将红外线照射到金纳米棒上以结晶活性层。

35. 发明申请

US20080318368A1 Method of manufacturing ZnO-based this film transistor 有权
标题翻译：制造ZnO基薄膜晶体管的方法
公开(公告)号：US20080318368A1
公开(公告)日：2008-12-25
申请号：US12153674
申请日：2008-05-22
申请人： Myung-kwan Ryu , Sang-yoon Lee , Je-hun Lee , Tae-sang Kim , Jang-yeon Kwon , Kyung-bae Park , Kyung-seok Son , Ji-sim Jung
发明人： Myung-kwan Ryu , Sang-yoon Lee , Je-hun Lee , Tae-sang Kim , Jang-yeon Kwon , Kyung-bae Park , Kyung-seok Son , Ji-sim Jung
IPC分类号： H01L21/00
CPC分类号： H01L29/7869
摘要： Provided is a method of manufacturing a ZnO-based thin film transistor (TFT). The method may include forming source and drain electrodes using one or two wet etchings. A tin (Sn) oxide, a fluoride, or a chloride having relatively stable bonding energy against plasma may be included in a channel layer. Because the source and drain electrodes are formed by wet etching, damage to the channel layer and an oxygen vacancy may be prevented or reduced. Because the material having higher bonding energy is distributed in the channel layer, damage to the channel layer occurring when a passivation layer is formed may be prevented or reduced.
摘要翻译：提供了一种制造ZnO基薄膜晶体管（TFT）的方法。该方法可以包括使用一个或两个湿蚀刻来形成源极和漏极。对于等离子体具有相对稳定的结合能的锡（Sn）氧化物，氟化物或氯化物可以包括在通道层中。因为源电极和漏电极是通过湿蚀刻形成的，所以可以防止或减少对沟道层的损伤和氧空位。因为具有较高结合能的材料分布在沟道层中，所以可以防止或减少在形成钝化层时对沟道层的损坏。

36. 发明申请

US20080145981A1 METHOD OF MANUFACTURING THIN FILM TRANSISTOR HAVING LIGHTLY DOPED DRAIN REGIONS 有权
标题翻译：制造具有轻型排水区域的薄膜晶体管的方法
公开(公告)号：US20080145981A1
公开(公告)日：2008-06-19
申请号：US11876650
申请日：2007-10-22
申请人： Jong-man KIM , Kyung-bae PARK , Jang-yeon KWON , Ji sim JUNG
发明人： Jong-man KIM , Kyung-bae PARK , Jang-yeon KWON , Ji sim JUNG
IPC分类号： H01L21/84
CPC分类号： H01L29/78621 , H01L29/66757
摘要： Provided is a method of manufacturing a thin film transistor, the method comprising: forming an amorphous silicon layer on a substrate; forming a polysilicon layer by crystallizing the amorphous silicon layer; forming a mask structure that masks a portion of the polysilicon; forming a source and a drain region and a channel region interposed between the source and the drain regions in the polysilicon layer; injecting impurities having a first concentration using an ion beam implantation into one end and the other end of the polysilicon layer which are not covered by the mask structure. The ends of the polysilicon layer with the mask thereon is then subjected to ion bombardment to increase the level of impurities in the source and drain regions while at the same time shrinking the size of the masked regions.
摘要翻译：提供一种制造薄膜晶体管的方法，该方法包括：在衬底上形成非晶硅层; 通过使非晶硅层结晶而形成多晶硅层; 形成掩模所述多晶硅的一部分的掩模结构; 在所述多晶硅层中形成源极和漏极区域以及介于所述源极和漏极区域之间的沟道区域; 使用离子束注入将具有第一浓度的杂质注入未被掩模结构覆盖的多晶硅层的一端和另一端。然后对其上具有掩模的多晶硅层的端部进行离子轰击以增加源极和漏极区域中的杂质的水平，同时缩小掩模区域的尺寸。

37. 发明申请

US20080116457A1 DRIVING DEVICE FOR UNIT PIXEL OF ORGANIC LIGHT EMITTING DISPLAY AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：有机发光显示器的单元的驱动装置及其制造方法
公开(公告)号：US20080116457A1
公开(公告)日：2008-05-22
申请号：US11877308
申请日：2007-10-23
申请人： Kyung-bae PARK , Jang-yeon KWON , Sang-yoon LEE , Ji-sim JUNG
发明人： Kyung-bae PARK , Jang-yeon KWON , Sang-yoon LEE , Ji-sim JUNG
IPC分类号： H01L29/04 , H01L21/84
CPC分类号： H01L27/1251 , H01L27/1214 , H01L27/1229 , H01L27/3244 , H01L29/04 , H01L29/78696
摘要： Provided are a driving device for a unit pixel of an organic light emitting display having an improved structure and a method of manufacturing the same.
摘要翻译：提供了一种具有改进结构的有机发光显示器的单位像素的驱动装置及其制造方法。

38. 发明申请

US20080067515A1 METHOD OF MANUFACTURING LATERALLY CRYSTALLIZED SEMICONDUCTOR LAYER AND METHOD OF MANUFACTURING THIN FILM TRANSISTOR USING THE SAME METHOD 有权
标题翻译：制造横向结晶半导体层的方法和使用该方法制造薄膜晶体管的方法
公开(公告)号：US20080067515A1
公开(公告)日：2008-03-20
申请号：US11852774
申请日：2007-09-10
申请人： Kyung-bae Park , Kyung-yeup Kim , Jong-man Kim , Jang-yeon Kwon , Ji-sim Jung
发明人： Kyung-bae Park , Kyung-yeup Kim , Jong-man Kim , Jang-yeon Kwon , Ji-sim Jung
IPC分类号： H01L21/428 , H01L21/84 , H01L27/12
CPC分类号： H01L21/268 , H01L21/02422 , H01L21/02532 , H01L21/02678 , H01L21/02691 , H01L27/1285
摘要： Provided are a method of manufacturing a laterally crystallized semiconductor layer and a method of manufacturing a thin film transistor (TFT) using the method. The method of manufacturing the laterally crystallized semiconductor layer comprises: forming a semiconductor layer on a substrate; irradiating laser beams on the semiconductor layer; splitting the laser beams using a prism sheet comprising an array of a plurality of prisms, advancing the laser beams toward the semiconductor layer to alternately form first and second areas in the semiconductor layer so as to fully melt the first areas, wherein the laser beams are irradiated onto the first areas, and the laser beams are not irradiated onto the second areas; and inducing the first areas to be laterally crystallized using the second areas as seeds.
摘要翻译：提供了制造横向结晶半导体层的方法和使用该方法制造薄膜晶体管（TFT）的方法。制造横向结晶的半导体层的方法包括：在衬底上形成半导体层; 在半导体层上照射激光束; 使用包括多个棱镜的阵列的棱镜片分割激光束，将激光束朝向半导体层前进，以在半导体层中交替地形成第一和第二区域，以便使第一区域完全熔化，其中激光束照射到第一区域上，激光束不照射到第二区域上; 并且使用第二区域作为种子诱导第一区域被横向结晶。

39. 发明申请

US20070259487A1 Method of forming a polysilicon film and method of manufacturing a thin film transistor including a polysilicon film 有权
标题翻译：形成多晶硅膜的方法和制造包括多晶硅膜的薄膜晶体管的方法
公开(公告)号：US20070259487A1
公开(公告)日：2007-11-08
申请号：US11808521
申请日：2007-06-11
申请人： Kyung-bae Park , Takashi Noguchi , Se-young Cho , Do-young Kim , Jang-yeon Kwon
发明人： Kyung-bae Park , Takashi Noguchi , Se-young Cho , Do-young Kim , Jang-yeon Kwon
IPC分类号： H01L21/336
CPC分类号： H01L29/66757 , H01L29/78603 , H01L29/78606
摘要： In a method of forming a polysilicon film, a thin film transistor including a polysilicon film, and a method of manufacturing a thin film transistor including a polysilicon film, the thin film transistor includes a substrate, a first heat conduction film on the substrate, a second heat conduction film adjacent to the first heat conduction film, the second heat conduction film having a lower thermal conductivity than the first heat conduction film, a polysilicon film on the second heat conduction film and the first heat conduction film adjacent to the second heat conduction film, and a gate stack on the polysilicon film. The second heat conduction film may either be on the first heat conduction film or, alternatively, the first heat conduction film may be non-contiguous and the second heat conduction film may be interposed between portions of the non-contiguous first heat conduction film.
摘要翻译：在形成多晶硅膜的方法中，包括多晶硅膜的薄膜晶体管和包括多晶硅膜的薄膜晶体管的制造方法，薄膜晶体管包括基板，基板上的第一导热膜，与所述第一导热膜相邻的所述第二导热膜，所述第二导热膜的热导率低于所述第一导热膜，所述第二导热膜上的多晶硅膜和与所述第二导热膜相邻的所述第一导热膜膜和多晶硅膜上的栅极堆叠。第二导热膜可以在第一导热膜上，或者第一导热膜可以不连续，并且第二导热膜可以介于不连续的第一导热膜的部分之间。

40. 发明申请

US20070155067A1 METHOD OF FABRICATING POLYCRYSTALLINE SILICON FILM AND METHOD OF FABRICATING THIN FILM TRANSISTOR USING THE SAME 审中-公开
标题翻译：制造多晶硅薄膜的方法及使用其制造薄膜晶体管的方法
公开(公告)号：US20070155067A1
公开(公告)日：2007-07-05
申请号：US11553693
申请日：2006-10-27
申请人： Kyung-bae Park , Takashi Noguchi , Hyuck Lim , Jang-yeon Kwon
发明人： Kyung-bae Park , Takashi Noguchi , Hyuck Lim , Jang-yeon Kwon
IPC分类号： H01L21/84 , H01L21/00 , H01L21/20 , H01L21/36
CPC分类号： H01L21/2026 , H01L21/02488 , H01L21/02532 , H01L27/1281
摘要： Disclosed herein are methods of fabricating a polycrystalline silicon film and methods of fabricating a thin film transistor (TFT) using the same. The method of fabricating a polycrystalline silicon film includes forming an electrically insulating thermally conductive layer using a material selected from the group consisting of aluminum-containing ceramics, cobalt-containing ceramics, and iron-containing ceramics, on a substrate; forming an amorphous silicon layer on the thermally conductive layer; forming an amorphous silicon island by patterning the amorphous silicon layer; and crystallizing amorphous silicon by annealing the amorphous silicon island. A polycrystalline silicon film having a very large grain size and a TFT using the same can be formed in desired positions.
摘要翻译：本文公开了制造多晶硅膜的方法和使用其制造薄膜晶体管（TFT）的方法。制造多晶硅膜的方法包括在基板上使用选自含铝陶瓷，含钴陶瓷和含铁陶瓷的材料形成电绝缘导热层; 在所述导热层上形成非晶硅层; 通过图案化非晶硅层形成非晶硅岛; 并通过退火非晶硅岛结晶非晶硅。可以在期望的位置形成具有非常大的晶粒尺寸的多晶硅膜和使用其的TFT。

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