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31. 发明授权

US07352035B1 Flash memory devices and methods for fabricating flash memory devices 失效
标题翻译：闪存设备和制造闪存设备的方法
公开(公告)号：US07352035B1
公开(公告)日：2008-04-01
申请号：US11700084
申请日：2007-01-31
申请人： Jai-Hyuk Song , Jeong-Hyuk Choi , Ok-Cheon Hong
发明人： Jai-Hyuk Song , Jeong-Hyuk Choi , Ok-Cheon Hong
IPC分类号： H01L29/788 , H01L21/8239 , G11C16/02
CPC分类号： H01L29/66833 , H01L27/115 , H01L27/11521 , H01L27/11524 , H01L27/11568 , H01L29/66825 , H01L29/7881 , H01L29/792
摘要： A flash memory device includes a cell string having a plurality of cell transistors connected in series, and a string selection transistor and a ground selection transistor connected to both ends of the cell string, respectively, wherein the cell transistor has a channel impurity concentration higher than a channel impurity concentration of at least one of the string selection transistor and the ground selection transistor.
摘要翻译：一种闪速存储器件，包括串联有多个单元晶体管的单元串，以及串联选择晶体管和接地选择晶体管，分别连接到单元串的两端，其中单元晶体管的沟道杂质浓度高于串选择晶体管和接地选择晶体管中的至少一个的沟道杂质浓度。

32. 发明申请

US20070023815A1 Non-volatile memory device and associated method of manufacture 审中-公开
标题翻译：非易失性存储器件及相关制造方法
公开(公告)号：US20070023815A1
公开(公告)日：2007-02-01
申请号：US11493605
申请日：2006-07-27
申请人： Dong-Yean Oh , Jeong-Hyuk Choi , Jai-Hyuk Song , Jong-Kwang Lim , Jae-Young Ahn , Ki-Hyun Hwang , Jin-Gyun Kim , Hong-Suk Kim
发明人： Dong-Yean Oh , Jeong-Hyuk Choi , Jai-Hyuk Song , Jong-Kwang Lim , Jae-Young Ahn , Ki-Hyun Hwang , Jin-Gyun Kim , Hong-Suk Kim
IPC分类号： H01L29/76
CPC分类号： H01L29/7881 , H01L27/115 , H01L27/11521 , H01L29/42336
摘要： A non-volatile memory device comprises a floating gate formed across an active region of a semiconductor substrate, and a control gate electrode formed over the floating gate. An insulation pattern is formed between the floating gate and the active region such that the insulation pattern makes contact with a bottom edge and a sidewall of the floating gate.
摘要翻译：非易失性存储器件包括横跨半导体衬底的有源区域形成的浮置栅极和形成在浮置栅极上的控制栅电极。在浮动栅极和有源区域之间形成绝缘图案，使得绝缘图案与浮动栅极的底部边缘和侧壁接触。

33. 发明申请

US20070012979A1 NAND flash memory device and method of fabricating the same 失效
标题翻译： NAND闪存器件及其制造方法
公开(公告)号：US20070012979A1
公开(公告)日：2007-01-18
申请号：US11483466
申请日：2006-07-10
申请人： Jai-Hyuk Song , Jeong-Hyuk Choi
发明人： Jai-Hyuk Song , Jeong-Hyuk Choi
IPC分类号： H01L29/94
CPC分类号： H01L27/115 , H01L27/11521 , H01L27/11524
摘要： A NAND type flash memory device includes a semiconductor substrate, word lines, first and second selection lines, tunnel insulation layers, and selection gate insulation layers. The semiconductor substrate includes a memory transistor region and a selection transistor region. The word lines are arranged in the memory transistor region of the semiconductor substrate, and the selection lines are arranged in the selection transistor region of the semiconductor substrate. The tunnel insulation layers are interposed between the word lines and the semiconductor substrate, and the selection gate insulation layers are interposed between the selection lines and the semiconductor substrate and have a thinner thickness than the thickness of the tunnel insulation layers. Also, the selection gate insulation layers have a thinner thickness in their center region than in their edge portions.
摘要翻译： NAND型闪速存储器件包括半导体衬底，字线，第一和第二选择线，隧道绝缘层和选择栅极绝缘层。半导体衬底包括存储晶体管区域和选择晶体管区域。字线布置在半导体衬底的存储晶体管区域中，并且选择线被布置在半导体衬底的选择晶体管区域中。隧道绝缘层插在字线和半导体衬底之间，并且选择栅极绝缘层介于选择线和半导体衬底之间，并且具有比隧道绝缘层的厚度更薄的厚度。此外，选择栅极绝缘层的中心区域的厚度比其边缘部分薄。

34. 发明申请

US20070001215A1 Non-volatile memory device having a floating gate and method of forming the same 审中-公开
标题翻译：具有浮动栅极的非易失性存储器件及其形成方法
公开(公告)号：US20070001215A1
公开(公告)日：2007-01-04
申请号：US11480729
申请日：2006-07-03
申请人： Jong-Kwang Llm , Jeong-Hyuk Choi , Woon-Kyung Lee , Jai-Hyuk Song
发明人： Jong-Kwang Llm , Jeong-Hyuk Choi , Woon-Kyung Lee , Jai-Hyuk Song
IPC分类号： H01L29/788
CPC分类号： H01L29/42324 , H01L27/115 , H01L27/11521 , H01L29/40114
摘要： A nonvolatile memory device includes a device isolating layer disposed at a substrate to define an active region and a floating gate disposed on the active region. The floating gate includes a flat portion and a pair of wall portions. The pair of wall portions extend upward from both edges of the flat portion adjacent to the device isolating layer and face each other. The nonvolatile memory device further includes a tunnel insulating layer interposed between the floating gate and the active region. Moreover, the wall portions and the flat portion are formed of a single layer, and the thickness of the flat portion is larger than a width of the wall portions.
摘要翻译：非易失性存储器件包括设置在衬底上以限定有源区的器件隔离层和布置在有源区上的浮置栅。浮动门包括平坦部分和一对壁部分。所述一对壁部分从邻近所述装置隔离层的所述平坦部分的两个边缘向上延伸并面对彼此。非易失性存储器件还包括插入在浮置栅极和有源区域之间的隧道绝缘层。此外，壁部和平坦部由单层形成，平坦部的厚度大于壁部的宽度。

35. 发明申请

US20060292802A1 Semiconductor Device and Method for Forming the Same 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20060292802A1
公开(公告)日：2006-12-28
申请号：US11425444
申请日：2006-06-21
申请人： Woon Lee , Jeong-Hyuk Choi , Dong-Jun Lee , Jai-Hyuk Song
发明人： Woon Lee , Jeong-Hyuk Choi , Dong-Jun Lee , Jai-Hyuk Song
IPC分类号： H01L21/336 , H01L29/76
CPC分类号： H01L29/7881 , H01L21/28273 , H01L27/115 , H01L27/11521 , H01L27/11524 , H01L29/42324 , H01L29/42376 , H01L29/66825
摘要： There are provided a memory transistor having a select transistor with asymmetric gate electrode structure and an inverted T-shaped floating gates and a method for forming the same. A gate electrode of the select transistor adjacent to a memory transistor has substantially an inverted T-shaped figure, whereas the gate electrode of the select transistor opposite to the memory transistor has nearly a box-shaped figure. In order to form the floating gate of the memory transistor in shape of the inverted T, a region for the select transistor is closed when opening a region for the memory transistor.
摘要翻译：提供了一种存储晶体管，其具有具有不对称栅电极结构的选择晶体管和反向T形浮栅及其形成方法。与存储晶体管相邻的选择晶体管的栅电极具有大致倒T形图形，而与存储晶体管相对的选择晶体管的栅电极具有几乎一个盒形图形。为了以反相T的形式形成存储晶体管的浮置栅极，当打开存储晶体管的区域时，用于选择晶体管的区域闭合。

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