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    • 37. 发明申请
    • Home network connection management system using UPnP and VLAN multicast
    • 家庭网络连接管理系统采用UPnP和VLAN组播
    • US20070071012A1
    • 2007-03-29
    • US11485801
    • 2006-07-13
    • Jun-Hee ParkDong-Hwan ParkDong-Hee KimKyeong-Deok MoonKwang-II Lee
    • Jun-Hee ParkDong-Hwan ParkDong-Hee KimKyeong-Deok MoonKwang-II Lee
    • H04L12/28
    • H04L12/2803H04L12/4641H04L12/4691H04L29/12009H04L61/106
    • Provided is a home network connection management system using UPnP (Universal Plug and Play) and VLAN (Virtual LAN) multicast. The home network connection management system includes a UPnP-VLAN interfacing section for receiving requests of registration of VLAN and multicast addresses from a UPnP device in response to connection establishment commands from a connection manager, a VLAN managing section for registering the VLAN and multicast addresses in a VLAN mapping table according to connection establishment request from the UPnP device through the UPnP-VLAN interfacing section, the VLAN mapping table for matching and storing the VLAN and multicast addresses under the control of the VLAN managing section, and an Ethernet device driver for retrieving the VLAN and multicast addresses from the VLAN mapping table in response to TCP/IP data from an outside, forming the received TCP/IP data into VLAN frames, and transmitting the VLAN frames.
    • 提供了使用UPnP(通用即插即用)和VLAN(虚拟LAN)组播的家庭网络连接管理系统。 家庭网络连接管理系统包括UPnP-VLAN接口部分,用于响应来自连接管理器的连接建立命令,用于从UPnP设备接收注册VLAN和组播地址的请求,用于注册VLAN的VLAN管理部分和多播地址 根据UPnP设备通过UPnP-VLAN接口部分的连接建立请求,VLAN映射表,用于匹配和存储VLAN管理部分控制下的VLAN和组播地址的VLAN映射表,以及用于检索的以太网设备驱动程序 来自VLAN映射表的VLAN和组播地址,响应来自外部的TCP / IP数据,将接收的TCP / IP数据形成VLAN帧,并发送VLAN帧。
    • 40. 发明授权
    • Method of manufacturing thin film transistor
    • 制造薄膜晶体管的方法
    • US06395652B2
    • 2002-05-28
    • US09736308
    • 2000-12-15
    • Cheol-Se KimDong-Hee KimMyeung-Kyu Lee
    • Cheol-Se KimDong-Hee KimMyeung-Kyu Lee
    • H01L2131
    • H01L29/66765H01L29/78669
    • A method of manufacturing a thin film transistor, includes preparing a process chamber having a stage, providing a substrate on the stage of the process chamber, injecting a first mixed gas of NH3, N2 and SiH4 into the process chamber, forming a plasma in the process chamber and forming a silicon nitride film (SiNx) on the substrate, injecting a second mixed gas of H2 and SiH4 into the process chamber while removing the first mixed gas in the plasma state, forming a pure amorphous silicon film (a-Si:H) on the silicon nitride film using the second mixed gas, injecting a third mixed gas of H2, SiH4 and PH3 into the process chamber while removing the second mixed gas in the plasma state, and forming a doped amorphous silicon film (n+ a-Si:H) on the silicon nitride film using the second mixed gas.
    • 制造薄膜晶体管的方法包括制备具有级的处理室,在处理室的台上提供衬底,将NH 3,N 2和SiH 4的第一混合气体注入到处理室中,在第 在衬底上形成氮化硅膜(SiNx),在等离子体状态下除去第一混合气体,将H2和SiH4的第二混合气体注入到处理室中,形成纯非晶硅膜(a-Si: H)在使用第二混合气体的氮化硅膜上,在等离子体状态下除去第二混合气体,将H2,SiH4和PH3的第三混合气体注入到处理室中,形成掺杂的非晶硅膜(n + a- Si:H),使用第二混合气体。