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31. 发明授权

US07292334B1 Binary arrays of nanoparticles for nano-enhanced Raman scattering molecular sensors 有权
标题翻译：用于纳米增强拉曼散射分子传感器的二元纳米颗粒阵列
公开(公告)号：US07292334B1
公开(公告)日：2007-11-06
申请号：US11090352
申请日：2005-03-25
申请人： Alexandre M. Bratkovski , Theodore I. Kamins
发明人： Alexandre M. Bratkovski , Theodore I. Kamins
IPC分类号： G01J3/44
CPC分类号： G01N21/658
摘要： A nano-enhanced Raman scattering (NERS)-active structure includes a substrate, a monolayer of nanoparticles disposed on a surface of the substrate, and a spacer material surrounding each nanoparticle in the monolayer of nanoparticles. The monolayer of nanoparticles includes a first plurality of nanoparticles and a second plurality of nanoparticles. The nanoparticles of the second plurality are interspersed among the first plurality and exhibit a plasmon frequency that differs from any plasmon frequency exhibited by the first plurality. Also described are a method for forming such a NERS-active structure and a NERS system that includes a NERS-active structure, an excitation radiation source, and a detector for detecting Raman scattered radiation.
摘要翻译：纳米增强拉曼散射（NERS）活性结构包括底物，设置在基底表面上的单层纳米颗粒，以及围绕纳米颗粒单层中的每个纳米颗粒的间隔物。纳米颗粒的单层包括第一多个纳米颗粒和第二多个纳米颗粒。第二多个纳米颗粒散布在第一多个中，并且表现出与第一多个表现出的任何等离子体频率不同的等离子体激元频率。还描述了形成这样的NERS-活性结构的方法和包括NERS-活性结构，激发辐射源和用于检测拉曼散射辐射的检测器的NERS系统。

32. 发明授权

US07208775B2 Polarized radiation source using spin extraction/injection 失效
标题翻译：使用旋转萃取/注射的极化辐射源
公开(公告)号：US07208775B2
公开(公告)日：2007-04-24
申请号：US11061060
申请日：2005-02-18
申请人： Viatcheslav V. Osipov , Alexandre M. Bratkovski
发明人： Viatcheslav V. Osipov , Alexandre M. Bratkovski
IPC分类号： H01L33/00
CPC分类号： H01L33/02 , H01L33/0004 , H01S5/04 , H01S5/32
摘要： Spin-polarized electrons can be efficiently extracted from an n-doped semiconductor layer (n-S) by forming a modified Schottky contact with a ferromagnetic material (FM) and a δ-doped layer at an interface under forward bias voltage conditions. Due to spin-selection property of the FM-S junction, spin-polarized carriers appear in the n-doped semiconductor layer near the FM-S interface. If a FM-n-n′-p heterostructure is formed, where the n′ region is a narrower gap semiconductor, polarized electrons from the n-S region and holes from the p-S region can diffuse into the n′-S region under the influence of independent voltages applied between the FM and n′ regions and the n′ and p regions. The polarized electrons and holes recombine in the n′-S region and produce polarized light. The polarization can be controlled and modulated by controlling the applied voltages.
摘要翻译：通过在正向偏压条件下在界面处形成与铁磁材料（FM）和δ掺杂层的改性肖特基接触，可以从n掺杂半导体层（n-S）有效地提取自旋极化电子。由于FM-S结的自旋选择性质，自旋极化载流子出现在FM-S界面附近的n掺杂半导体层中。如果形成FM-n-n'-p异质结构，其中n'区域是较窄的间隙半导体，则来自nS区域的极化电子和来自pS区域的空穴可以扩散到n'-S区域的影响下在FM和n'区域以及n'和p区域之间施加独立电压。极化的电子和空穴在n'-S区域复合并产生偏振光。可以通过控制施加的电压来控制和调制极化。

33. 发明授权

US07094610B2 Magnetic sensor based on efficient spin injection into semiconductors 失效
标题翻译：基于有效自旋注入半导体的磁传感器
公开(公告)号：US07094610B2
公开(公告)日：2006-08-22
申请号：US10879649
申请日：2004-06-28
申请人： Viatcheslav V. Osipov , Alexandre M. Bratkovski
发明人： Viatcheslav V. Osipov , Alexandre M. Bratkovski
IPC分类号： H01L29/76 , G11C11/34
CPC分类号： G01R33/06 , Y10T428/32
摘要： A magnetic sensor using efficient injection of spin polarized electrons at room temperature can be fabricated by forming a semiconductor layer sandwiched between ferromagnets and forming δ-doped layers between the semiconductor layer and the ferromagnets. A sensing method applies a magnetic field to be measured to the semiconductor layer and observes the conductivity of the sensor. The sensing techniques can achieve high magneto-sensitivity and very high operating speed, which in turn provides ultra fast and sensitive magnetic sensors.
摘要翻译：可以通过在半导体层和铁磁体之间形成夹在铁磁体之间并形成δ-掺杂层的半导体层来制造在室温下有效地注入自旋极化电子的磁传感器。感测方法将要测量的磁场施加到半导体层并观察传感器的电导率。感测技术可以实现高磁敏感和非常高的操作速度，从而提供超快速和灵敏的磁传感器。

34. 发明授权

US07087971B2 Magnetic sensor based on efficient spin injection into semiconductors 失效
标题翻译：基于有效自旋注入半导体的磁传感器
公开(公告)号：US07087971B2
公开(公告)日：2006-08-08
申请号：US10880058
申请日：2004-06-28
申请人： Vlatcheslav V. Osipov , Alexandre M. Bratkovski
发明人： Vlatcheslav V. Osipov , Alexandre M. Bratkovski
IPC分类号： H01L29/76 , G11C11/34
CPC分类号： G01R33/06 , Y10T428/32
摘要： A magnetic sensor based on efficient spin injection of spin-polarized electrons from ferromagnets into semiconductors and rotation of electron spin under a magnetic field. Previous spin injection structures suffered from very low efficiency (less than 5). A spin injection device with a semiconductor layer sandwiched between δ-doped layers and ferromagnets allows for very high efficient (close to 100%) spin polarization to be achieved at room temperature, and allows for high magneto-sensitivity and very high operating speed, which in turn allows devising ultra fast and sensitive magnetic sensors.
摘要翻译：一种基于从铁磁体到半导体的自旋极化电子自旋注入和在磁场下旋转电子自旋的磁传感器。先前的自旋注射结构的效率非常低（小于5）。具有夹在δ-掺杂层和铁磁体之间的半导体层的自旋注入装置允许在室温下实现非常高效（接近100％）的自旋极化，并且允许高的磁敏感性和非常高的操作速度，其中反过来允许设计超快速和敏感的磁性传感器。

35. 发明授权

US06879013B2 Amplifiers using spin injection and magnetic control of electron spins 有权
标题翻译：使用自旋注入和电子自旋磁控制的放大器
公开(公告)号：US06879013B2
公开(公告)日：2005-04-12
申请号：US10632038
申请日：2003-07-30
申请人： Viatcheslav V. Osipov , Alexandre M. Bratkovski
发明人： Viatcheslav V. Osipov , Alexandre M. Bratkovski
IPC分类号： H01L29/66 , H01L35/24 , G11C7/00 , H01L51/00
CPC分类号： B82Y10/00 , G11C2213/18 , H01L29/66984
摘要： Ultrafast solid state amplifiers of electrical current, including power amplification devices, use injection of spin-polarized electrons from a magnetic region into another magnetic region through a semiconductor control region and electron spin precession inside the control region induced by a magnetic field resulting from a current flowing through a conductive nanowire. The amplifiers may include magnet-semiconductor-magnet heterostructures and are able to operate on electric currents and electromagnetic waves having frequencies up to 100 GHz or more.
摘要翻译：包括功率放大装置的电流的超快固态放大器使用通过半导体控制区域将磁极区域的自旋极化电子注入另一个磁区域，并由电流产生的磁场引起的电子自旋进动流过导电纳米线。放大器可以包括磁体 - 半导体 - 磁体异质结构，并且能够对频率高达100GHz或更高的电流和电磁波进行操作。

36. 发明授权

US10033477B2 Spatial multiplexing for optical transmission 有权
公开(公告)号：US10033477B2
公开(公告)日：2018-07-24
申请号：US13560450
申请日：2012-07-27
申请人： Alexandre M Bratkovski , Jacob Khurgin , Wayne Victor Sorin , Michael Renne Ty Tan
发明人： Alexandre M Bratkovski , Jacob Khurgin , Wayne Victor Sorin , Michael Renne Ty Tan
IPC分类号： H04J14/04
摘要： A system includes an optical Y-junction coupler to receive a first modulated optical signal on a wide input path of the optical Y-junction coupler and to receive a second modulated optical signal on a narrow input path of the optical Y-junction coupler, wherein the optical Y-junction coupler generates a combined optical signal from signals received on the wide input path and the narrow input path. A multimode waveguide receives the combined optical signal from the optical Y-junction coupler and propagates a spatially multiplexed optical output signal along a transmission path.

37. 发明授权

US09212997B2 Scattering spectroscopy nanosensor 有权
标题翻译：散射光谱纳米传感器
公开(公告)号：US09212997B2
公开(公告)日：2015-12-15
申请号：US14405334
申请日：2012-07-29
申请人： Gary Gibson , Zhiyong Li , Alexandre M. Bratkovski , Shih-Yuan Wang , Huei Pei Kuo , Steven Barcelo , Zhang-Lin Zhou
发明人： Gary Gibson , Zhiyong Li , Alexandre M. Bratkovski , Shih-Yuan Wang , Huei Pei Kuo , Steven Barcelo , Zhang-Lin Zhou
IPC分类号： G01J3/44 , G01N21/65 , B82Y15/00
CPC分类号： G01N21/658 , B82Y15/00 , G01J3/4412 , G01N2021/651 , G01N2201/06113 , Y10S977/902
摘要： A scattering spectroscopy nanosensor includes a nanoscale-patterned sensing substrate to produce an optical scattering response signal indicative of a presence of an analyte when interrogated by an optical stimulus. The scattering spectroscopy nanosensor further includes a protective covering to cover and protect the nanoscale-patterned sensing substrate. The protective covering is to be selectably removed by exposure to an optical beam incident on the protective covering. The protective covering is to prevent the analyte from interacting with the nanoscale-patterned sensing substrate prior to being removed.
摘要翻译：散射光谱纳米传感器包括纳米级图案化的感测衬底，以产生指示当通过光学刺激询问的分析物存在时的光学散射响应信号。散射光谱纳米传感器还包括覆盖并保护纳米级图案化感测基板的保护覆盖层。通过暴露在入射到保护罩上的光束可选地去除保护罩。保护性覆盖物是在去除之前防止分析物与纳米级图案化的感测基板相互作用。

38. 发明授权

US09171613B2 Memristors with asymmetric electrodes 有权
标题翻译：带不对称电极的忆阻器
公开(公告)号：US09171613B2
公开(公告)日：2015-10-27
申请号：US13322291
申请日：2009-07-28
申请人： Alexandre M. Bratkovski , Jianhua Yang , Shih-Yuan Wang , Michael Stuke
发明人： Alexandre M. Bratkovski , Jianhua Yang , Shih-Yuan Wang , Michael Stuke
IPC分类号： H01L29/04 , H01L47/00 , G11C13/00 , G11C16/02 , H01L45/00 , H01L27/24
CPC分类号： H01L45/1273 , G11C13/0007 , G11C16/02 , G11C2213/19 , G11C2213/52 , H01L27/2463 , H01L27/2472 , H01L45/08 , H01L45/1233 , H01L45/1246 , H01L45/146 , H01L45/147 , H01L45/148
摘要： Embodiments of the present invention are directed to nanoscale memristor devices that provide nonvolatile memristive switching. In one embodiment, a memristor device includes an active region, a first electrode disposed on a first surface of the active region, and a second electrode disposed on a second surface of the active region, the second surface opposite the first surface. The first electrode is configured with a smaller width than the active region in a first direction, and the second electrode is configured with a larger width than the active region in a second direction. Application of a voltage to at least one of the electrodes produces an electric field across a sub-region within the active region between the first electrode and the second electrode.
摘要翻译：本发明的实施例涉及提供非易失性忆阻转换的纳米级忆阻器装置。在一个实施例中，忆阻器件包括有源区域，设置在有源区域的第一表面上的第一电极和设置在有源区域的第二表面上的第二电极，第二表面与第一表面相对。第一电极被配置为在第一方向上具有比有源区域更小的宽度，并且第二电极被配置为在第二方向上具有比有源区域更大的宽度。向至少一个电极施加电压产生穿过第一电极和第二电极之间的有源区域内的子区域的电场。

39. 发明申请

US20150065390A1 INTEGRATED SENSORS 有权
标题翻译：集成传感器
公开(公告)号：US20150065390A1
公开(公告)日：2015-03-05
申请号：US14394295
申请日：2012-04-20
申请人： Alexandre M. Bratkovski , Zhiyong Li , Wei Wu , Min Hu , R. Stanley Williams , Ansoon Kim
发明人： Alexandre M. Bratkovski , Zhiyong Li , Wei Wu , Min Hu , R. Stanley Williams , Ansoon Kim
IPC分类号： G01N21/65 , G01N35/00 , B01L3/00
CPC分类号： G01N21/658 , B01L3/5088 , B01L2300/0627 , B01L2300/0819 , B01L2300/161 , G01N21/648 , G01N35/00009 , G01N2035/00019
摘要： Examples of integrated sensors are disclosed herein. An example of an integrated sensor includes a substrate and a sensing member formed on a surface of the substrate. The sensing member includes collapsible signal amplifying structures and an area surrounding the collapsible signal amplifying structures that enables self-positioning of droplets exposed thereto toward the collapsible signal amplifying structures.
摘要翻译：本文公开了集成传感器的示例。集成传感器的示例包括形成在基板的表面上的基板和感测构件。感测构件包括可折叠信号放大结构和围绕可折叠信号放大结构的区域，其使得能够将暴露于其的液滴自动定位到可折叠信号放大结构。

40. 发明授权

US08842363B2 Dynamically varying an optical characteristic of light by a sub-wavelength grating 有权
标题翻译：通过亚波长光栅动态地改变光的光学特性
公开(公告)号：US08842363B2
公开(公告)日：2014-09-23
申请号：US12696682
申请日：2010-01-29
申请人： Sagi Varghese Mathai , Jingjing Li , Alexandre M. Bratkovski
发明人： Sagi Varghese Mathai , Jingjing Li , Alexandre M. Bratkovski
IPC分类号： G02B5/18 , G02B27/44
CPC分类号： G02B27/44
摘要： An apparatus for dynamically varying an optical characteristic of a light beam includes an optical element configured to receive a beam of light. The optical element includes at least one sub-wavelength grating formed of a plurality of lines. The apparatus includes at least one actuator connected to at least one component of the optical element and a controller for controlling the at least one actuator to dynamically vary a characteristic of the beam of light that is at least one of emitted through and reflected from the optical element.
摘要翻译：用于动态地改变光束的光学特性的装置包括被配置为接收光束的光学元件。光学元件包括由多条线形成的至少一个亚波长光栅。该装置包括连接到光学元件的至少一个部件的至少一个致动器和用于控制至少一个致动器的控制器，以动态地改变光束的特性，所述光束是从光学器件发射的和经过反射的至少一个光束元件。

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