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31. 发明授权

US08456194B2 Level shifter with primary and secondary pull-up circuits 有权
标题翻译：电平移位器，带有初级和次级上拉电路
公开(公告)号：US08456194B2
公开(公告)日：2013-06-04
申请号：US12948689
申请日：2010-11-17
申请人： Michael J. Lencioni , Sundararajan Rangarajan
发明人： Michael J. Lencioni , Sundararajan Rangarajan
IPC分类号： H03K19/0175
CPC分类号： H03K3/356113
摘要： A level shifter includes first and second input terminals, first and second output terminals, first pull-down circuitry operable to pull down one of the first and second output terminals responsive to signals present on the first and second input terminals, first pull-up circuitry operable to pull up the first output terminal responsive to a signal present on the second output terminal or pull up the second output terminal responsive to a signal present on the first output terminal, and second pull-up circuitry operable to pull up one of the first and second output terminals responsive to the signals present on the first and second input terminals.
摘要翻译：电平移位器包括第一和第二输入端子，第一和第二输出端子，第一下拉电路可操作以响应于存在于第一和第二输入端子上的信号而下拉第一和第二输出端子中的一个，第一上拉电路可操作以响应于存在于第二输出端子上的信号上拉第一输出端子，或者响应于存在于第一输出端子上的信号上拉第二输出端子，以及第二上拉电路，其可操作以将第一输出端以及响应于存在于第一和第二输入端子上的信号的第二输出端子。

32. 发明授权

US08450197B2 Contact elements of a semiconductor device formed by electroless plating and excess material removal with reduced sheer forces 有权
标题翻译：通过无电镀形成的半导体器件的接触元件和减少的剪切力除去多余的材料
公开(公告)号：US08450197B2
公开(公告)日：2013-05-28
申请号：US12962968
申请日：2010-12-08
申请人： Axel Preusse , Norbert Schroeder , Uwe Stoeckgen
发明人： Axel Preusse , Norbert Schroeder , Uwe Stoeckgen
IPC分类号： H01L21/20 , H01L21/4763 , H01L21/44
CPC分类号： H01L21/7684 , H01L21/76819 , H01L21/76879
摘要： Contact elements in the contact level of a semiconductor device may be formed on the basis of a selective deposition technique, such as electroless plating, wherein an efficient planarization of the contact level is achieved without subjecting the contact elements to undue mechanical stress. In some illustrative embodiments, an overfilling of the contact openings may be reliably avoided and the planarization of the surface topography is accomplished on the basis of a non-critical polishing process. In other cases, electrochemical etch techniques are applied in combination with a conductive sacrificial current distribution layer in order to remove any excess material of the contact elements without inducing undue mechanical stress.
摘要翻译：可以基于选择性沉积技术（例如化学镀）形成半导体器件的接触电平中的接触元件，其中在不使接触元件受到不适当的机械应力的情况下实现接触电平的有效平面化。在一些示例性实施例中，可以可靠地避免接触开口的过度填充，并且基于非关键抛光工艺来实现表面形貌的平坦化。在其他情况下，电化学蚀刻技术与导电牺牲电流分布层结合使用，以便去除接触元件的任何多余材料而不引起不适当的机械应力。

33. 发明授权

US08447968B2 Air-interface application layer security for wireless networks 有权
标题翻译：无线网络的空中接口应用层安全
公开(公告)号：US08447968B2
公开(公告)日：2013-05-21
申请号：US11261399
申请日：2005-10-28
申请人： Sarvar Patel , Ganapathy Sundaram , Ajay Rajkumar
发明人： Sarvar Patel , Ganapathy Sundaram , Ajay Rajkumar
IPC分类号： H04L29/06
CPC分类号： H04L9/12 , H04L9/0662 , H04L63/0428 , H04L2209/80 , H04W12/02 , H04W80/00
摘要： The present invention provides a method for encrypting data for transmission over a wireless link. The method includes encrypting at least one block of data, at an air-interface application layer, using an encryption algorithm that receives a cryptosynch as input. The value of the cryptosynch is based on an order of the at least one block of data relative to other blocks of data. The value of the cryptosynch is recoverable by a receiver based on the ordering of the ordering of the blocks of data. The at least one encrypted block of data is transmitted to a receiver that is operable to preserve the order of the at least one block of data relative to the other blocks of data.
摘要翻译：本发明提供了一种用于加密数据以在无线链路上传输的方法。该方法包括使用接收密码同步作为输入的加密算法在空中接口应用层处加密至少一个数据块。密码子的值基于相对于其他数据块的至少一个数据块的顺序。基于数据块排序的顺序，接收器可以恢复密码同步的值。所述至少一个加密的数据块被发送到接收机，所述接收机可操作以相对于其他数据块保留所述至少一个数据块的顺序。

34. 发明授权

US08445344B2 Uniform high-k metal gate stacks by adjusting threshold voltage for sophisticated transistors by diffusing a metal species prior to gate patterning 有权
标题翻译：通过在栅极图案化之前通过扩散金属物质来调整复杂晶体管的阈值电压，使均匀的高k金属栅极堆叠
公开(公告)号：US08445344B2
公开(公告)日：2013-05-21
申请号：US12787461
申请日：2010-05-26
申请人： Richard Carter , Falk Graetsch , Martin Trentzsch , Sven Beyer , Berthold Reimer , Robert Binder , Boris Bayha
发明人： Richard Carter , Falk Graetsch , Martin Trentzsch , Sven Beyer , Berthold Reimer , Robert Binder , Boris Bayha
IPC分类号： H01L21/3205 , H01L21/4763 , H01L21/8238
CPC分类号： H01L21/28088 , H01L21/28185 , H01L21/28194 , H01L21/82345 , H01L21/823462 , H01L21/823842 , H01L21/823857 , H01L29/4966 , H01L29/517 , H01L29/66545 , H01L29/6659
摘要： Sophisticated gate electrode structures for N-channel transistors and P-channel transistors are patterned on the basis of substantially the same configuration while, nevertheless, the work function adjustment may be accomplished in an early manufacturing stage. For this purpose, diffusion layer and cap layer materials are removed after incorporating the desired work function metal species into the high-k dielectric material and subsequently a common gate layer stack is deposited and subsequently patterned.
摘要翻译：在基本上相同的构造的基础上对N沟道晶体管和P沟道晶体管的复杂的栅电极结构进行构图，然而，可以在早期制造阶段完成功函数调整。为此，在将期望的功函数金属物质并入高k电介质材料中之后去除扩散层和覆盖层材料，随后沉积公共栅层堆叠并随后构图。

35. 发明授权

US08440559B2 Work function adjustment in high-K metal gate electrode structures by selectively removing a barrier layer 有权
标题翻译：通过选择性去除阻挡层，在高K金属栅电极结构中进行功函数调整
公开(公告)号：US08440559B2
公开(公告)日：2013-05-14
申请号：US13624235
申请日：2012-09-21
申请人： Globalfoundries Inc.
发明人： Markus Lenski , Klaus Hempel , Vivien Schroeder , Robert Binder , Joachim Metzger
IPC分类号： H01L21/8234
CPC分类号： H01L21/823842 , H01L21/28088 , H01L21/82345 , H01L29/4966 , H01L29/517 , H01L29/66545 , H01L29/6659 , H01L29/7833 , H01L29/7843
摘要： Generally, the present disclosure is directed work function adjustment in high-k metal gate electrode structures. In one illustrative embodiment, a method is disclosed that includes removing a placeholder material of a first gate electrode structure and a second gate electrode structure, and forming a first work function adjusting material layer in the first and second gate electrode structures, wherein the first work function adjusting material layer includes a tantalum nitride layer. The method further includes removing a portion of the first work function adjusting material layer from the second gate electrode structure by using the tantalum nitride layer as an etch stop layer, removing the tantalum nitride layer by performing a wet chemical etch process, and forming a second work function adjusting material layer in the second gate electrode structure and above a non-removed portion of the first work function adjusting material layer in the first gate electrode structure.
摘要翻译：通常，本公开涉及高k金属栅电极结构中的功函数调整。在一个说明性实施例中，公开了一种方法，其包括移除第一栅极电极结构和第二栅电极结构的占位符材料，以及在第一和第二栅电极结构中形成第一功函数调节材料层，其中第一工件功能调整材料层包括氮化钽层。该方法还包括通过使用氮化钽层作为蚀刻停止层从第二栅极电极结构去除第一功函数调整材料层的一部分，通过执行湿化学蚀刻工艺去除氮化钽层，以及形成第二第二栅电极结构中的功函数调整材料层，以及第一栅电极结构中的第一功函数调整材料层的未除去部分之上。

36. 发明授权

US08432035B2 Metal cap layer with enhanced etch resistivity for copper-based metal regions in semiconductor devices 有权
标题翻译：具有增强的半导体器件中铜基金属区域的蚀刻电阻率的金属覆盖层
公开(公告)号：US08432035B2
公开(公告)日：2013-04-30
申请号：US13297860
申请日：2011-11-16
申请人： Volker Kahlert , Christof Streck
发明人： Volker Kahlert , Christof Streck
IPC分类号： H01L23/48 , H01L21/4763
CPC分类号： H01L21/76849 , H01L21/76814 , H01L21/76843 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： During the fabrication of sophisticated metallization systems of semiconductor devices, material deterioration of conductive cap layers may be significantly reduced by providing a noble metal on exposed surface areas after the patterning of the corresponding via openings. In one embodiment, a semiconductor device is provided that includes a metallization system formed above a substrate. The metallization system includes a metal line formed in a dielectric layer and having a top surface. The metallization system also includes a conductive cap layer formed on the top surface. A via extends through the conductive cap layer and connects to the top surface of the metal line. A conductive barrier layer is formed on sidewalls of the via. An interface layer is formed of a noble metal between the conductive cap layer and the conductive barrier layer and between the top surface of the metal line and the conductive barrier layer.
摘要翻译：在制造半导体器件的复杂的金属化系统期间，通过在对应的通路孔的图案化之后在暴露的表面区域上提供贵金属可以显着降低导电盖层的材料劣化。在一个实施例中，提供了一种半导体器件，其包括在衬底上形成的金属化系统。金属化系统包括形成在电介质层中并具有顶表面的金属线。金属化系统还包括形成在顶表面上的导电盖层。通孔延伸穿过导电盖层并连接到金属线的顶表面。导电阻挡层形成在通孔的侧壁上。界面层由导电盖层和导电阻挡层之间以及金属线的顶表面和导电阻挡层之间的贵金属形成。

37. 发明授权

US08428554B2 Method for authenticating a mobile unit attached to a femtocell that operates according to code division multiple access 有权
标题翻译：用于认证连接到根据码分多址操作的毫微微小区的移动单元的方法
公开(公告)号：US08428554B2
公开(公告)日：2013-04-23
申请号：US12019903
申请日：2008-01-25
申请人： Todd C. Morgan , Sarvar Patel , Robin J. Thompson
发明人： Todd C. Morgan , Sarvar Patel , Robin J. Thompson
IPC分类号： H04M1/66 , H04M3/16 , H04W4/00 , H04W36/00 , H04L9/00 , H04L29/06 , H04K1/00 , G06F21/00 , G06F7/04 , G06F17/30
CPC分类号： H04W12/06 , H04W84/045
摘要： The present invention provides a method involving a femtocell in communication with an Internet Protocol Multimedia Subsystem (IMS) network. In one embodiment, the femtocell operates according to code division multiple access (CDMA) standards. The method includes receiving, from the femtocell and at a first secure entity in the IMS network, first authentication information generated by the mobile unit using a first random number broadcast by the femtocell in a global challenge. The method also includes receiving, from a second secure entity in the secure network, at least one security key formed based on the global challenge and second authentication information for uniquely challenging the mobile unit. In one embodiment, the second secure entity is a CDMA-based authentication server. The method further includes providing the security key(s) to the femtocell in response to authenticating the mobile unit based upon the second authentication information.
摘要翻译：本发明提供一种涉及与因特网协议多媒体子系统（IMS）网络通信的毫微微小区的方法。在一个实施例中，毫微微小区根据码分多址（CDMA）标准进行操作。该方法包括从毫微微小区和IMS网络中的第一安全实体接收移动单元使用在全球挑战中由毫微微小区广播的第一随机数生成的第一认证信息。该方法还包括从安全网络中的第二安全实体接收基于全局挑战形成的至少一个安全密钥和用于唯一挑战移动单元的第二认证信息。在一个实施例中，第二安全实体是基于CDMA的认证服务器。所述方法还包括响应于基于所述第二认证信息认证所述移动单元向所述毫微微小区提供所述安全密钥。

38. 发明授权

US08423320B2 Method and system for quantitative inline material characterization in semiconductor production processes based on structural measurements and related models 有权
标题翻译：基于结构测量和相关模型的半导体生产过程中定量在线材料表征的方法和系统
公开(公告)号：US08423320B2
公开(公告)日：2013-04-16
申请号：US12417787
申请日：2009-04-03
申请人： Matthias Schaller , Thomas Oszinda , Christin Bartsch , Daniel Fischer
发明人： Matthias Schaller , Thomas Oszinda , Christin Bartsch , Daniel Fischer
IPC分类号： G01B11/00
CPC分类号： G01N21/84 , G01N21/3563 , G01N2021/3595 , G01N2021/8416 , H01L22/12
摘要： By using powerful data analysis techniques, such as PCR, PLS, CLS and the like, in combination with measurement techniques providing structural information, gradually varying material characteristics may be determined during semiconductor fabrication, thereby also enabling the monitoring of complex manufacturing sequences. For instance, the material characteristics of sensitive dielectric materials, such as ULK material, may be detected, for instance with respect to an extension of a damage zone, in order to monitor the quality of metallization systems of sophisticated semiconductor devices. The inline measurement data may be obtained on the basis of infrared spectroscopy, for instance using FTIR and the like, which may even allow directly obtaining the measurement data at process chambers, substantially without affecting the overall process throughput.
摘要翻译：通过使用强大的数据分析技术，例如PCR，PLS，CLS等，结合提供结构信息的测量技术，可以在半导体制造期间确定逐渐变化的材料特性，从而也可以监测复杂的制造顺序。例如，为了监测复杂半导体器件的金属化系统的质量，可以例如相对于损伤区域的延伸部分来检测诸如ULK材料的敏感电介质材料的材料特性。可以基于红外光谱法获得在线测量数据，例如使用FTIR等，其甚至可以允许在处理室处直接获得测量数据，基本上不影响整个工艺处理量。

39. 发明授权

US08407544B2 Method and apparatus for AC scan testing with distributed capture and shift logic 有权
标题翻译：用分布式捕获和移位逻辑进行交流扫描测试的方法和装置
公开(公告)号：US08407544B2
公开(公告)日：2013-03-26
申请号：US12761573
申请日：2010-04-16
申请人： Amitava Majumdar , Vasu Ganti
发明人： Amitava Majumdar , Vasu Ganti
IPC分类号： G01R31/28
CPC分类号： G01R31/318594 , G01R31/318552
摘要： An integrated circuit device includes a plurality of functional tiles. Each functional tile may be configured into a scan chain. A clock generator is operable to generate an internal clock signal that is distributed to each of the functional tiles. A clock gater is associated with each of the functional tiles. Each clock gater is operable to receive an external enable signal and the internal clock signal, generate a scan clock signal for loading a test pattern into the scan chain based on the external enable signal and the internal clock signal, and generate at least one capture clock signal for capturing a response of the tile to the test pattern responsive to identifying the loading of the test pattern.
摘要翻译：集成电路装置包括多个功能瓦片。每个功能瓦片可以被配置成扫描链。时钟发生器可操作以产生分配给每个功能瓦片的内部时钟信号。时钟门控器与每个功能瓦片相关联。每个时钟门控器可操作以接收外部使能信号和内部时钟信号，产生用于基于外部使能信号和内部时钟信号将测试图案加载到扫描链中的扫描时钟信号，并产生至少一个捕获时钟信号，用于响应于识别测试图案的加载而将瓦片的响应捕获到测试图案。

40. 发明授权

US08404109B2 Sucrose inversion process 有权
标题翻译：蔗糖反转过程
公开(公告)号：US08404109B2
公开(公告)日：2013-03-26
申请号：US13316278
申请日：2011-12-09
申请人： Robert Jansen , John Kerr , Anthony Baiada
发明人： Robert Jansen , John Kerr , Anthony Baiada
IPC分类号： B01D17/12 , C13K3/00 , B01J14/00
CPC分类号： C13K3/00 , C13B20/14
摘要： A method of inverting sucrose, including (i) determining an initial solids concentration of an aqueous sucrose solution, an initial bed volume of a sucrose inversion resin system, a minimum target inversion percentage, a maximum target inversion percentage, a target maximum hydroxymethylfuran (HMF) concentration, a minimum target pH, or a maximum target pH; (ii) contacting the sucrose inversion resin system with the aqueous sucrose solution under conditions of aqueous solution flow rate and aqueous solution temperature to produce an inverted sucrose solution having an inversion percentage, an HMF concentration, and a pH; (iii) observing an instantaneous inversion percentage, an instantaneous HMF concentration, or an instantaneous pH of the inverted sucrose solution; and, if appropriate; (iv) changing at least one of the aqueous solution flow rate or the aqueous solution temperature to yield a product having a desired inversion percentage, HMF concentration, and/or pH. An apparatus capable of performing the method.
摘要翻译：一种反相蔗糖的方法，包括（i）测定蔗糖水溶液的初始固体浓度，蔗糖反转树脂体系的初始床体积，最小目标反转百分比，最大目标反转百分比，目标最大羟甲基呋喃（HMF ）浓度，最小目标pH或最大目标pH; （ii）在水溶液流动速率和水溶液温度条件下使蔗糖反转树脂体系与蔗糖溶液水溶液接触，以产生具有倒置百分比，HMF浓度和pH值的倒置蔗糖溶液; （iii）观察反转蔗糖溶液的瞬时反转百分比，瞬时HMF浓度或瞬时pH值; 并酌情; （iv）改变水溶液流速或水溶液温度中的至少一个，得到具有所需转化百分比，HMF浓度和/或pH值的产物。一种能够执行该方法的装置。

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