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    • 40. 发明公开
    • WIRING FORMING METHOD FOR SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
    • HERSTELLUNGSMETHODEFÜRDIE VERDRAHTUNG VON HALBLEITERANORDNUNGEN
    • EP0984485A1
    • 2000-03-08
    • EP98905798.9
    • 1998-03-06
    • Asahi Kasei Kogyo Kabushiki Kaisha
    • TONOMURA, ShoichiroKUNO, Toyohiko
    • H01L21/288H01L21/768
    • H01L21/76879H01L21/288H01L21/2885H01L21/76807H01L23/53228H01L23/53238H01L2924/0002H01L2924/00
    • Grooves and holes of high aspect ratio are filled completely and uniformly. After forming connection holes (3) and wiring grooves (4) in a silicon oxide film (2) which is formed on a silicon substrate (1), a TiN film (5) is formed over the entire surface of the semiconductor substrate and a Ti film (6) is formed on the region except for the connection holes (3) and the wiring grooves (4). Then, in a state where the connection holes (3) and the wiring groove (4) are dipped in a plating solution, a plating treatment is carried out under a deposition overvoltage higher than the deposition overvoltage of TiN to copper and lower than the deposition overvoltage of Ti to copper. Since plating is thus applied only to the portion where the TiN film (5) is exposed, namely, only to the portion of the connection holes (3) and the wiring grooves (4), the connection holes (3) and the wiring grooves (4) are filled with copper and when they are polished by a chemical and mechanical polishing method to form wirings, satisfactory copper wiring which are uniform and well filled can be obtained.
    • 高宽比的槽和孔完全均匀地填充。 在形成在硅衬底(1)上的氧化硅膜(2)中形成连接孔(3)和布线槽(4)之后,在半导体衬底的整个表面上形成TiN膜(5) 在除了连接孔(3)和布线槽(4)之外的区域上形成Ti膜(6)。 然后,在将连接孔(3)和布线槽(4)浸渍在电镀液中的状态下,电镀处理在比TiN与铜的沉积过电压高于沉积的沉积过电压下进行 Ti对铜的过电压 因此,仅对TiN膜(5)露出的部分即仅连接孔(3)和布线槽(4)的部分施加电镀,所以连接孔(3)和布线槽 (4)填充铜,当通过化学和机械抛光方法抛光以形成布线时,可以获得均匀且充分填充的令人满意的铜布线。