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31. 发明专利

JPH1124889A FIFO DATA BUFFERING SYSTEM 失效
公开(公告)号：JPH1124889A
公开(公告)日：1999-01-29
申请号：JP3595498
申请日：1998-02-18
申请人： LSI LOGIC CORP
发明人： GRAEF STEFAN
IPC分类号： G11C7/00 , G06F5/10 , G06F5/14 , G06F5/06
摘要： PROBLEM TO BE SOLVED: To provide a system with high reliability and to especially improve a conventional data buffering FIFO system by minimizing data loss and spurious data transmission. SOLUTION: This system is to transfer data in a FIFO data buffer with at least one related buffer pointer and to transfer the data from the inside of the FIFO data buffer to the outside and provided with a comparator circuit 13, plural counter blocks 22 to track a position of the pointer and plural flag registers 12 to indicate relative buffer capacity. And the counter blocks 22 and the flag registers 12 are evaluated and an ability of the buffer to receive or to transmit the data is judged by the comparator circuit 13.

32. 发明专利

JPH10326851A BALL GRID ARRAY PACKAGE USING PROTRUDED METAL CONTACT RING 失效
公开(公告)号：JPH10326851A
公开(公告)日：1998-12-08
申请号：JP10963498
申请日：1998-04-20
申请人： LSI LOGIC CORP
发明人： CHOOKU J CHA , KWAI H LOW , MANIAM ARAGARTONAM
IPC分类号： H01L23/12 , H01L21/60 , H01L23/50
摘要： PROBLEM TO BE SOLVED: To augment the density of bonding wires in a ball grid array package by a method wherein bonding rings, which give protruded bonding surfaces for wire bonding to a semiconductor chip on the surface of a base body on the package, are provided on the base body of the package. SOLUTION: A package has a metallic pattern on one surface thereof and wire bonding contacts 12, a flexible tape or a ceramic base body 10 are or is provided on the upper surface of the package. Moreover, some of the contacts 12 on the upper surface are interconnected with contacts under the lower part of the bottom of the package through conductive through-paths 16. The density of bonding wires 24 for interconnecting a semiconductor chip 20 with bonding pads on the base body 10 is augmented, such that one or more protruded conductive rings as rings 30 and 32 are mounted to the upper surface of the base body 10 to augment the density of the bonding pads, as well as to give protruded bonding surfaces to enable the adjacent bonding pads to use to the rings.

33. 发明专利

JPH10322665A REPETITIVE READ CONTROL METHOD/DEVICE FOR GOP DATA 失效
公开(公告)号：JPH10322665A
公开(公告)日：1998-12-04
申请号：JP11685297
申请日：1997-05-07
申请人： LSI LOGIC CORP
发明人： TAKIGUCHI OSAMU
IPC分类号： H04N5/85 , H04N5/783 , H04N5/907 , H04N5/92 , H04N5/937 , H04N9/804
摘要： PROBLEM TO BE SOLVED: To provide picture data for reverse reproduction by containing a step for storing one piece GOP data which is read from an accumulation medium in a stream buffer only once and a step for repetitively reading GOP data stored in the stream buffer for plural times. SOLUTION: Compressed moving picture data which is read from the accumulation medium 1 is temporarily stored in the stream buffer 5 provided for DRAM through a pre-server 2 and a DRAM controller 3. The stream buffer 5 has a capacity for storing plural pieces of GOP data and writes compressed moving picture data until the capacity is full. At the same time, stored compressed moving picture data are cyclically and sequentially read at a prescribed rate with the control of the DRAM controller 3, are sent to a decoder 6 and decoded. Then, data is stored in the frame memory 7 of DRAM 4 as a reference image for generating a next image and the reproduced picture is displayed with the control of a display controller 8.

34. 发明专利

JPH10303774A SYSTEM AND METHOD FOR TRACKING AND COMPENSATING FREQUENCY OFFSET ERROR IN SATELLITE RECEIVER 失效
公开(公告)号：JPH10303774A
公开(公告)日：1998-11-13
申请号：JP4461198
申请日：1998-02-10
申请人： LSI LOGIC CORP
发明人： BEN-EFRAIM NADAV , KEATE CHRISTOPHER R
IPC分类号： H04B1/26 , H04B1/10 , H04B1/16
摘要： PROBLEM TO BE SOLVED: To provide an improved system in DBS reception. SOLUTION: This system is a DBS pre-stage section that includes a tuner 202 that receives a high frequency signal and converts it into a base band signal, having a frequency offset error and a demodulator/decoder 204 that generates a compensation signal. The demodulator/decoder is an A/D converter that converts a base-band signal into an oversampled digital base-band signal and is sampled more than twice per symbol period, a composite multiplier that forms a signal with an offset error for the oversampling digital base-band signal and a decimation block that reduces the sampling speed into two sampling signals per symbol period, so as to apply digital frequency offset compensation.

35. 发明专利

JPH10303373A CAPACITOR HAVING SHIELD MADE OF POLYSILICIDE IN DIGITAL CMOS PROCESS 失效
公开(公告)号：JPH10303373A
公开(公告)日：1998-11-13
申请号：JP11065598
申请日：1998-04-21
申请人： LSI LOGIC CORP
发明人： EDWARD W RIEU , SEAHOI CAESAR WON
IPC分类号： H01L27/04 , H01L21/02 , H01L21/822 , H01L21/8238 , H01L27/06 , H01L27/08 , H01L27/092
摘要： PROBLEM TO BE SOLVED: To provide a capacitor shielded in a digital CMOS production process. SOLUTION: A shielded capacitor 24 has a 1st surface (top plate) and a 2nd surface (bottom plate). The bottom plate is composed of two connected parts 30 and 32 and these parts are arranged so as to sandwich a top plate 28. In this case, a polysilicon layer 26 is formed between the plates 28, 30 and 32 and a semiconductor substrate 34 and the plates 28, 30 and 32 are shielded from the substrate. As the order of production, the polysilicon layer 26 is first produced and the plates 28, 30 and 32 are next produced on the polysilicon layer 26. The polysilicon is silicified and connected to a ground 38.

36. 发明专利

JPH10303148A METHOD AND DEVICE FOR VAPOR-DEPOSITING TITANIUM NITRIDE ON SUBSTRATE BY CHEMICAL VAPOR DEPOSITION METHOD 失效
公开(公告)号：JPH10303148A
公开(公告)日：1998-11-13
申请号：JP5165098
申请日：1998-03-04
申请人： LSI LOGIC CORP
发明人： ZHAO JOE W , HSIA WEI-JEN , CATABAY WILBUR G
IPC分类号： C23C16/34 , C23C16/44 , C23C16/455 , H01L21/28 , H01L21/285
摘要： PROBLEM TO BE SOLVED: To provide a method and device for forming titanium nitride on substrate, by which a titanium nitride layer which is thinner in thickness than a titanium nitride layer formed of the surface of a substrate can be formed on the side edge section of the substrate. SOLUTION: In a method for vapor-depositing titanium nitride on substrate, the quantity of titanium nitride vapor-deposited on the side edge section 6 of a semiconductor substrate 2 is suppressed, but the vapor deposition itself is not inhibited completely. Therefore, one or more kinds of vapor-deposition suppressing gases are made to flow to the side edge section 6 in the direction which is substantially opposite to the flowing direction of a process gas flowing to the section 6. The flows of the vapor-deposition suppressing gases to the section 6 guide part of the process gas in a direction in which the process gas is separated from the section 6, locally dilute the process gas near the section 6 in a vapor deposition chamber 30, or perform the above-mentioned two actions in a combined state. Therefore, the quantity of the titanium nitride vapor-deposited on the side edge section 6 is reduced. The vapor- deposition suppressing gases flow through a plurality of holes 52 formed through a substrate supporting table 4 below the substrate 2. The holes 52 have openings which are arranged at intervals along the circumferential direction near the top section of a table 40. The vapor- deposition suppressing gases come out in the vicinity of the side edge section 6 below the upper surface 4 of the substrate 2 through the openings of the holes 52.

37. 发明专利

JPH10296616A PREADJUSTMENT OF POLISHING PAD FOR CHEMICAL-MECHANICAL POLISHING 失效
公开(公告)号：JPH10296616A
公开(公告)日：1998-11-10
申请号：JP9623698
申请日：1998-04-08
申请人： LSI LOGIC CORP
发明人： MICHAEL J BARMAN
IPC分类号： B24B53/007 , B24B53/017 , H01L21/304 , B24B37/00
摘要： PROBLEM TO BE SOLVED: To avoid labor intensive step at the present process and realize high throughput at a low cost. SOLUTION: A pre adjustment mechanism 114 is provided with an arm 134, which can be arranged on a polishing pad 112, and a head section 136, which is arranged at the end of the arm 134 and can rotate around the center axis of the arm 134. The head section 136 is made to rotate around the center axis of the arm 134 and also has at least two heads 128 and 130, which have a face to adjust or pre-adjust the polishing pad 112. Through such constitution, at least two heads 128 and 130 are made to face with the polishing pad 112 by the rotation of the head 136 around the center axis of the arm 134 at a given angle so that at least the two different heads 128 and 130 can contact the polishing pad 112 in order for the adjustment or preadjustment according to the extend of the rotation.

38. 发明专利

JPH10262232A DIGITAL VIDEO BROADCASTING 失效
公开(公告)号：JPH10262232A
公开(公告)日：1998-09-29
申请号：JP5530898
申请日：1998-03-06
申请人： LSI LOGIC CORP
发明人： BEWICK SIMON
IPC分类号： H04L9/28 , H04L9/36 , H04N5/00 , H04N7/167
摘要： PROBLEM TO BE SOLVED: To execute the descrambling of data by a simple and inexpensive means by enabling the passing of a descrambled data part and descrambling a scrambled data part. SOLUTION: Scrambled data (m)=(k) are sent along a signal route 10 through two signal route loops (6, 7)... provided with ciphers 62 and 64 and descrambled data are supplied. Two shift registers Reg1 and Reg2 supply the data to a block cipher unit 64 by 8 bytes each, receive the data from there and supply the delay of 16 bytes. The descrambled data part (j)

39. 发明专利

JPH10223562A METHOD FOR IMPLANTATION OF SILICON SUBSTRATE AND SILICON SUBSTRATE 失效
公开(公告)号：JPH10223562A
公开(公告)日：1998-08-21
申请号：JP1151798
申请日：1998-01-23
申请人： LSI LOGIC CORP
发明人： CHION-YAN TSUAI , WANG ZHIHAI , WEN-CHIN STANLEY JAE
IPC分类号： H01L21/265 , H01L21/28 , H01L21/285 , H01L21/3205 , H01L21/336 , H01L23/52 , H01L29/78
摘要： PROBLEM TO BE SOLVED: To provide a method for converting the exposed surfaces of a silicon substrate and a polysilicon gate electrode into amorphous state, while preventing undesirable implantation in a channel region of the substrate, and preventing damages on a gate oxide. SOLUTION: Portions to be converted into metal silicide on the surfaces of a silicon substrate 2 and a polysilicon gate electrode 20 are converted into an amorphous state. Then, amorphous silicon is reacted with the silicon substrate and a metal layer provided on the polysilicon gate electrode. In this case, the exposed surface of the silicon substrate 2 and the surface of the polysilicon gate electrode are subjected to ion-implantation by application of amorphous ion beams 40 from the direction of an angle α which is from 15 to 60 deg. with respect to a line A which intersects the flat surface of the silicon substrate at right angles. By applying the beams from this direction, the implanted ions are prevented from reaching through the gate electrode 20, to a gate oxide 14 located therebeneath, or further to a channel 10 having an MOS structure, that is, channeling phenomenon is thus prevented from occurring.

40. 发明专利

JPH10214810A METHOD OF IMPROVING UNIFORMITY AND FLATNESS ON EDGE-DIE AND REMOVING TUNGSTEN-STRINGERS CAUSED BY CMP OF WAFER 失效
公开(公告)号：JPH10214810A
公开(公告)日：1998-08-11
申请号：JP35561697
申请日：1997-12-24
申请人： LSI LOGIC CORP
发明人： KUPPAM EU KUMAARU
IPC分类号： H01L21/302 , H01L21/304 , H01L21/3065 , H01L21/3205 , H01L21/321 , H01L21/3213
摘要： PROBLEM TO BE SOLVED: To obtain a uniform and flat integrated circuit wafer surface and to remove tungsten-stringers from the surface by limiting the deposition of material on the peripheral region so that the peripheral region may have improved uniformity and flatness and the probability of generation of stringers may be lowered. SOLUTION: An IC 100 has an active die region 112 and a peripheral region 114. 'Perfect' dies 104 exist in a die region 112. 'Partial' dies 102 exist in the selected parts of the peripheral region 114 and are in the positions adjacent to edge-dies. The perfect die 104 includes all circuits necessary for the function of an IC. The die 102 cannot operate, but it can effectively reduce the deposition of material in the peripheral region 114. Thus, the IC is prevented from not operating due to potential risks such as nonuniformity, imperfect flatness, and electrically conductive stringers such as tungsten-stringers.

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