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21. 发明授权

EP0594084B1 Scanning electron microscope 失效
标题翻译：扫描型电子显微镜
公开(公告)号：EP0594084B1
公开(公告)日：2003-05-21
申请号：EP93116733.2
申请日：1993-10-15
申请人： Hitachi, Ltd.
发明人： Todokoro, Hideo , Otaka, Tadashi
IPC分类号： H01J37/28
CPC分类号： H01J37/18 , H01J37/20 , H01J37/28 , H01J2237/0475 , H01J2237/04756 , H01J2237/057 , H01J2237/18 , H01J2237/204 , H01J2237/244

22. 发明公开

EP0887835A3 Diagnostic pedestal assembly for a semiconductor wafer processing system 失效
标题翻译：用于半导体晶片加工系统的诊断装置
公开(公告)号：EP0887835A3
公开(公告)日：1999-12-29
申请号：EP98304921.4
申请日：1998-06-23
申请人： Applied Materials, Inc.
发明人： Ke, Kuang-Han , Lindley, Roger A. , Shan, Hongching , Mett, Richard R.
IPC分类号： H01J37/32
CPC分类号： H01L21/67109 , H01J37/32935 , H01J2237/244 , H01L21/67253 , H01L21/68785
摘要： A diagnostic pedestal assembly (104) for measuring ion current and DC bias voltage within a high-power plasma reaction chamber (804) of a semiconductor wafer processing system (802). The diagnostic pedestal assembly (104) contains an aperture located in a surface (114) of the pedestal (208) and a probe element (112) that is supported within the aperture.

23. 发明公开

EP0887835A2 Diagnostic pedestal assembly for a semiconductor wafer processing system 失效
标题翻译：诊断信息Halbleiterwaferbearbeitungssystem
公开(公告)号：EP0887835A2
公开(公告)日：1998-12-30
申请号：EP98304921.4
申请日：1998-06-23
申请人： Applied Materials, Inc.
发明人： Ke, Kuang-Han , Lindley, Roger A. , Shan, Hongching , Mett, Richard R.
IPC分类号： H01J37/32
CPC分类号： H01L21/67109 , H01J37/32935 , H01J2237/244 , H01L21/67253 , H01L21/68785
摘要： A diagnostic pedestal assembly (104) for measuring ion current and DC bias voltage within a high-power plasma reaction chamber (804) of a semiconductor wafer processing system (802). The diagnostic pedestal assembly (104) contains an aperture located in a surface (114) of the pedestal (208) and a probe element (112) that is supported within the aperture.
摘要翻译：一种用于测量半导体晶片处理系统（802）的大功率等离子体反应室（804）内的离子电流和DC偏置电压的诊断基座组件（104）。诊断基座组件（104）包含位于基座（208）的表面（114）中的孔和支撑在孔内的探针元件（112）。

24. 发明公开

KR1020150048149A 전압 반전 및 개선된 회복을 갖는 아크 처리 审中-实审
标题翻译：电弧管理与电压反转和改进的恢复
公开(公告)号：KR1020150048149A
公开(公告)日：2015-05-06
申请号：KR1020157005958
申请日：2013-08-28
申请人： 어드밴스드 에너지 인더스트리즈 인코포레이티드
发明人： 왈드헨드릭 , 판크라츠조수아브라이언 , 크리스티데이비드 , 코월브라이언디.
IPC分类号： H05H1/24 , H05H1/36 , H05H1/48 , H01J37/32 , H05H1/34
CPC分类号： H01J37/32944 , H01J37/24 , H01J37/244 , H01J2237/0206 , H01J2237/244 , H05H1/24 , H05H1/36 , H05H1/48 , H05H2001/3494
摘要： 플라즈마처리동작에있어서아크처리를위한시스템및 방법이제공된다. 상기방법은, 제1 전압극성으로플라즈마부하에파워서플라이로전류를제공하는단계및 에너지저장장치를활성화하는단계를포함하며, 에너지저장장치가활성화될때 에너지저장장치가제1 전압극성의반대인극성을갖고또한적어도제1 전압극성만큼큰 진폭을갖는역극성전압을인가한다. 아크의검출시, 에너지저장장치로부터역극성전압을갖는플라즈마부하에파워가인가되고, 상기플라즈마부하에대한역극성전압의인가는플라즈마부하에제공되는전류의레벨을감소시킨다.
摘要翻译：公开了用于等离子体处理操作中的电弧处理的系统和方法。该方法包括向第一电压极性的等离子体负载提供电源并为能量存储装置通电，因此当其被通电时，能量存储装置施加相反极性的电压，该极性电压的幅度至少与第一电压极性。当检测到电弧时，利用具有与第一电压极性相反的极性的反极性电压从能量存储装置向等离子体负载施加电力，对等离子体负载施加反极性电压降低等级提供给等离子体负载的电流。

25. 发明公开

KR1020110123679A 분산 보상을 갖는 전자 빔 디바이스, 및 이의 동작 방법 有权
标题翻译：具有分散补偿的电子束装置及其操作方法
公开(公告)号：KR1020110123679A
公开(公告)日：2011-11-15
申请号：KR1020110042489
申请日：2011-05-04
申请人： 아이씨티 인티그레이티드 써킷 테스팅 게젤샤프트 퓌어 할프라이터프뤼프테크닉 엠베하
发明人： 라니오,슈테판 , 쇄네커,제랄드
IPC分类号： H01J37/28 , H01J37/06
CPC分类号： H01J37/28 , H01J37/1471 , H01J37/153 , H01J2237/1523 , H01J2237/1534 , H01J2237/244 , H01J37/06 , H01J37/1478
摘要： PURPOSE: An electronic beam device and an operation method thereof are provided to image a sample by dividing a signal electronic beam into first dispersion and second dispersion. CONSTITUTION: A beam emitter(102) emits a primary electron beam(101). An object electromagnetic lens(125) focuses the primary electron beam to a sample(130). A beam splitter(115) comprises first dispersion for dividing a signal electronic beam. A dispersion compensation device(104) comprises second dispersion. The dispersion compensation device is arranged in the upper side of the beam splitter according to the primary electron beam. An objective lens defines an optical axis(126).
摘要翻译：目的：提供一种电子束装置及其操作方法，用于将信号电子束分割为第一色散和第二色散来对样本进行成像。构成：射束发射器（102）发射一次电子束（101）。物体电磁透镜（125）将一次电子束聚焦到样品（130）上。分束器（115）包括用于分割信号电子束的第一色散。色散补偿装置（104）包括第二色散。色散补偿装置根据一次电子束配置在分束器的上侧。物镜限定光轴（126）。

26. 发明授权

EP1987530B9 INSTALLATION ET PROCEDE DE NANO -FABRICATION 有权
标题翻译：纳米制造安装和方法
公开(公告)号：EP1987530B9
公开(公告)日：2012-09-12
申请号：EP07730998.7
申请日：2007-02-16
申请人： CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (CNRS)
发明人： GIERAK, Jacques
IPC分类号： B82B3/00
CPC分类号： H01J37/20 , B82Y10/00 , B82Y30/00 , B82Y40/00 , G01Q80/00 , H01J37/3174 , H01J2237/20228 , H01J2237/20235 , H01J2237/20264 , H01J2237/244 , H01J2237/31732 , H01J2237/31737 , H01J2237/31755 , H01J2237/31788

27. 发明公开

EP2124245A1 Ultra high precision measurement tool 审中-公开
标题翻译： HochpräzisesMessinstrument
公开(公告)号：EP2124245A1
公开(公告)日：2009-11-25
申请号：EP08156665.5
申请日：2008-05-21
申请人： ICT, Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik Mbh
发明人： Frosien, Jürgen , Winkler, Dieter , Weigel, Udo , Grimm, Stefan
IPC分类号： H01J37/08 , H01J37/26 , H01J37/304 , H01J27/02 , H01J27/26
CPC分类号： H01J37/08 , H01J27/26 , H01J37/28 , H01J2237/004 , H01J2237/061 , H01J2237/0807 , H01J2237/244 , H01J2237/24514 , H01J2237/24535 , H01J2237/24564 , H01J2237/24578 , H01J2237/2594 , H01J2237/2623 , H01J2237/2816 , H01J2237/2817
摘要： A focused ion beam device (100) is described comprising a gas field ion source (10) with an analyzer (175) for analyzing and classifying the structure of a specimen (120), a controller for controlling and/or modifying the structure of the specimen according to the analysis of the analyzer, an emitter tip (20), the emitter tip has a base tip (22) comprising a first material and a supertip (25) comprising a material different from the first material, wherein the supertip is a single atom tip and the base tip is a single crystal base tip. Furthermore, the focused ion beam device has a probe current control and a sample charge control. A method of operating a focused ion beam device is provided comprising applying a voltage between a single emission centre of the supertip and an electrode, supplying gas to the emitter tip, analyzing and classifying the structure of a specimen, and controlling the structure of the specimen.
摘要翻译：描述了一种聚焦离子束装置（100），其包括具有用于分析和分类样本（120）的结构的分析器（175）的气体离子源（10），用于控制和/或修改样品的结构的控制器样品根据分析仪的分析，发射极尖端（20），发射极尖端具有包括第一材料的基底尖端（22）和包括不同于第一材料的材料的超高压（25），其中超尖是单个原子尖端和底部尖端是单晶基座尖端。此外，聚焦离子束装置具有探针电流控制和样品充电控制。提供一种操作聚焦离子束装置的方法，包括在超高压的单个发射中心和电极之间施加电压，向发射极尖端提供气体，分析和分类样品的结构，以及控制样品的结构。

28. 发明公开

EP2105727A1 Scanning electron microscope comprising a film for holding a sample and a dish for receiving sample material from a damaged film 有权
标题翻译：扫描型电子显微镜用薄膜作为样品保持器和用于受损膜的样品材料的收集碗
公开(公告)号：EP2105727A1
公开(公告)日：2009-09-30
申请号：EP09250792.0
申请日：2009-03-20
申请人： JEOL Ltd.
发明人： Nishiyama, Hidetoshi , Koizumi, Mitsuru
IPC分类号： G01N23/225 , H01J37/20 , H01J37/26 , H01J37/28
CPC分类号： G01N23/2251 , G01N23/2204 , G01N2223/307 , G01N2223/612 , G01N2223/637 , H01J37/20 , H01J37/228 , H01J37/265 , H01J37/28 , H01J2237/182 , H01J2237/2004 , H01J2237/244 , H01J2237/2808
摘要： Method and apparatus capable of well observing or inspecting a liquid sample (20). The apparatus, for example a scanning electrode microscope, can be maintained and serviced better than heretofore. The apparatus has a film (32) including a first surface (32a) to hold the liquid sample (20) thereon, a vacuum chamber (11) for reducing the pressure of an ambient in contact with a second surface (32b) of the film (32), primary beam irradiation means (1) connected with the vacuum chamber (11) and irradiating the sample with a primary beam (7) via the film (32), signal detection means (4) for detecting a secondary signal produced from the sample (20) in response to the beam irradiation (7), a partitioning plate (14) for partially partitioning off the space between the film (32) and the primary beam irradiation means (1) in the vacuum chamber (11), and a vacuum gauge (15) for detecting the pressure inside the vacuum chamber (11).
Damage to the film is detected by a pressure increase inside the vacuum chamber. After detecting such a pressure increase the partitioning member is moved in the path of the irradiating beam in order to prevent sample material to spill into the irradiation means.
摘要翻译：方法和能够很好观察或检查的液体样品（20）装置。的装置，例如扫描电极显微镜，可以维护和服务比以前更好。该装置具有一个膜（32）包括第一表面（32A）以保持液体样品（20）在其上，在真空室（11），用于与膜的第二面（32B）减少接触的环境的压力（32），主光束照射单元（1）与所述真空室（11）连接，并且经由膜照射主光束（7）的样品（32）中，信号检测器，用于检测从产生的次级信号的装置（4）响应于所述光束照射（7）的样品（20），分隔板（14），用于在真空室中部分分隔从薄膜（32）和初级束照射设备（1）之间的空间（11），和真空计（15），用于检测所述真空室（11）内的压力。损坏膜是通过在真空室内部的压力增加来检测。检测寻求的压力增加分隔构件设置在照射光束的路径移动，以防止样品材料溢出到照射装置之后。

29. 发明公开

EP2002473A1 HOLE INSPECTION APPARATUS AND HOLE INSPECTION METHOD USING THE SAME 审中-公开
标题翻译：钻孔检测装置和钻孔检测方法
公开(公告)号：EP2002473A1
公开(公告)日：2008-12-17
申请号：EP07745797.6
申请日：2007-04-03
申请人： Cebt Co., Ltd.
发明人： KIM, Ho Seob
IPC分类号： H01L21/66
CPC分类号： H01J37/28 , G01R31/307 , H01J37/244 , H01J2237/0635 , H01J2237/22 , H01J2237/244 , H01J2237/24564 , H01J2237/24592 , H01J2237/281 , H01J2237/2817 , H01J2237/317 , H01L22/12 , H01L22/14
摘要： Disclosed herein is an apparatus and method for inspecting the via holes of a semiconductor device using electron beams. The apparatus includes electron beam irradiation means, a current measuring means, and a current measuring means and data processing means. The electron beam irradiation means radiate respective electron beams to inspect a plurality of inspection target holes. The current measuring means measures current, which is generated by irradiating the electron beams, radiated from the electron beam irradiation means, through a conductive layer located under the holes, or through the conductive layer and a separate detector. The data processing means processes data acquired through the measurement of the current measuring means.
摘要翻译：本文公开了一种使用电子束检查半导体器件的通孔的装置和方法。该装置包括电子束照射装置，电流测量装置，以及电流测量装置和数据处理装置。电子束照射装置辐射相应的电子束以检查多个检查目标孔。电流测量装置测量通过照射电子束而从电子束照射装置辐射的电流，通过位于孔下方的导电层，或者通过导电层和单独的检测器。数据处理装置处理通过电流测量装置的测量获得的数据。

30. 发明公开

EP1670033A4 ELECTRON BEAM DETECTOR AND ELECTRON TUBE 有权
标题翻译： ELEKTRONENSTRAHL-DETEKTOR UNDELEKTRONENRÖHRE
公开(公告)号：EP1670033A4
公开(公告)日：2008-11-26
申请号：EP04787796
申请日：2004-09-09
申请人： HAMAMATSU PHOTONICS KK
发明人： KYUSHIMA HIROYUKI , SUYAMA MOTOHIRO , KIMURA SUENORI , NEGI YASUHARU , KAWAI YOSHIHIKO , FUKASAWA ATSUHITO
IPC分类号： G01J1/02 , H01J40/14 , G01J1/42 , G01T1/24 , G01T1/28 , H01J1/35 , H01J37/244 , H01J43/12 , H01J43/16 , H01J43/30
CPC分类号： H01J40/14 , H01J43/30 , H01J2237/244
摘要： An insulating tube (9) has one end and the other end. An avalanche photodiode (APD) (15) is disposed outside the one end of the insulating tube (9). The other end of the insulating tube (9) is hermetically connected to an outside flange through a stem inner wall (61). Capacitors (C1, C2) electrically connected to the APD (15) are provided inside the insulating tube (9) and serve to remove the DC current from the signal generated by the APD (15) when it detects electrons. Since the capacitors (C1, C2) are provided inside the insulating tube (9), the response of the output signal is prevented from degrading.
摘要翻译：绝缘管（9）具有一端和另一端。在绝缘管（9）的一端的外侧设置有APD（15）。绝缘管（9）的另一端通过杆内壁（61）气密地连接到外凸缘（120）。电连接到APD（15）的电容器（C1，C2）设置在绝缘管（9）中。当检测电子时，电容器（C1，C2）从APD（15）产生的信号中去除直流分量。通过在绝缘管（9）中设置电容器（C1，C2），可以防止输出信号的响应受损。

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